K7Z327285M
Abstract: No abstract text available
Text: K7Z327285M Preliminary 512Kx72 DLW Double Late Write RAM Document Title 512Kx72 DLW(Double Late Write) RAM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial document. 1. Device name change from Double Late Write SigmaRAM to Double Late Write RAM
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K7Z327285M
512Kx72
512Kx72
11x19
00x10
00x18
K7Z327285M
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K7N327245M
Abstract: K7N327249M
Text: Preliminary 512Kx72 Pipelined NtRAMTM K7N327245M Document Title 512Kx72-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial document. 1. Speed bin merge. From K7N327249M to K7N327245M 2. AC parameter change. tOH min /tLZC(min) from 0.8 to 1.5 at -25
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512Kx72
K7N327245M
512Kx72-Bit
K7N327249M
11x19
K7N327245M
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BB209
Abstract: CYM52KNP72V33A-10BBC CYM52KNP72V33A-13BBC CYM52KNP72V33A-15BBC
Text: PRELIMINARY CYM52KNP72AV33 512Kx72 Pipelined MCM with NoBL Architecture Features • No Bus Latency, no dead cycles between write and read cycles • Internally synchronized registered outputs eliminate the need to control OE • Single 3.3V –5% and +5% power supply VDD
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CYM52KNP72AV33
512Kx72
CYM52KNP72AV33
BB209
CYM52KNP72V33A-10BBC
CYM52KNP72V33A-13BBC
CYM52KNP72V33A-15BBC
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Untitled
Abstract: No abstract text available
Text: Preliminary 512Kx72 Pipelined NtRAM TM K7N327245M Document Title 512Kx72-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 0.1 1. Initial document. 1. Speed bin merge. From K7N327249M to K7N327245M 2. AC parameter change. tOH min /tLZC(min) from 0.8 to 1.5 at -25
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K7N327245M
512Kx72-Bit
512Kx72
K7N327249M
K7N327245M
11x19
00x10
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C50456
Abstract: No abstract text available
Text: WEDPZ512K72V-XBX HI-RELIABILITY PRODUCT 512Kx72 Synchronous Pipeline Burst ZBL SRAM ADVANCED* FEATURES DESCRIPTION • Fast clock speeds: 166, 133, 100MHz The WEDPZ512K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The
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WEDPZ512K72V-XBX
512Kx72
100MHz
WEDPZ512K72V-XBX
C50456
C50456
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K7N327245M
Abstract: No abstract text available
Text: Preliminary 512Kx72 Pipelined NtRAMTM K7N327245M 512Kx72-Bit Pipelined NtRAM TM FEATURES GENERAL DESCRIPTION • 2.5V ±5% Power Supply. • Byte Writable Function. • Enable clock and suspend operation. • Single READ/WRITE control pin. • Self-Timed Write Cycle.
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512Kx72
K7N327245M
512Kx72-Bit
209BGA
11x19
K7N327245M
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K7N327249M
Abstract: No abstract text available
Text: Preliminary 512Kx72 Pipelined NtRAMTM K7N327249M 512Kx72-Bit Pipelined NtRAM TM FEATURES GENERAL DESCRIPTION • 2.5V ±5% Power Supply. • Byte Writable Function. • Enable clock and suspend operation. • Single READ/WRITE control pin. • Self-Timed Write Cycle.
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512Kx72
K7N327249M
512Kx72-Bit
209BGA
11x19
K7N327249M
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C50456
Abstract: No abstract text available
Text: WEDPZ512K72V-XBX HI-RELIABILITY PRODUCT 512Kx72 ZBT Synchronous Pipeline SRAM ADVANCED* FEATURES DESCRIPTION • Fast clock speeds: 166, 133, 100MHz The WEDPZ512K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The
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WEDPZ512K72V-XBX
512Kx72
100MHz
WEDPZ512K72V-XBX
C50456
C50456
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NtRAM
Abstract: K7N327245M K7N327249M
Text: Preliminary 512Kx72 Pipelined NtRAM TM K7N327245M Document Title 512Kx72-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. May. 10. 2001 Advance 0.1 1. Speed bin merge. From K7N327249M to K7N327245M 2. AC parameter change.
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512Kx72
K7N327245M
512Kx72-Bit
K7N327249M
11x19
NtRAM
K7N327245M
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W2Z512K72SJ
Abstract: No abstract text available
Text: W2Z512K72SJ 36Mb, 512Kx72 Synchronous Pipeline Burst NBL SRAM Preliminary* FEATURES DESCRIPTION n Fast clock speed: 225, 200, 166 and 150MHz The WEDC SyncBurst - SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDCs 72Mb
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W2Z512K72SJ
512Kx72
150MHz
512Kx36
W2Z512K72SJ35ES
W2Z512K72SJ38ES
W2Z512K72SJ28BC
W2Z512K72SJ30BC
W2Z512K72SJ35BC
W2Z512K72SJ
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Untitled
Abstract: No abstract text available
Text: K7N323601M K7N321801M 1Mx36 & 2Mx18 Pipelined NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 0.4 0.5 1.0 History Draft Date Remark 1. Initial document. 1. Add 165FBGA package 1. Update JTAG scan order 2. Speed bin merge.
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K7N323601M
K7N321801M
1Mx36
2Mx18-Bit
2Mx18
165FBGA
K7N3236
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CY7C1461V25
Abstract: CY7C1463V25 CY7C1465V25
Text: CY7C1461V25 CY7C1463V25 CY7C1465V25 PRELIMINARY 1M x 36/2M x 18/512K x 72 Flow-Thru SRAM with NoBL Architecture Features • Zero Bus Latency, no dead cycles between Write and Read cycles •Supports 133-MHz bus operations •1M x 36/2M × 18/512K × 72 common I/O
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CY7C1461V25
CY7C1463V25
CY7C1465V25
36/2M
18/512K
133-MHz
36/2M
18/512K
150-MHz
CY7C1461V25
CY7C1463V25
CY7C1465V25
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BE5L
Abstract: CYD18S18V18 CYD09S36V18 CYD18S36V18 SKR 175 FullFlex36
Text: FullFlex FullFlex Synchronous SDR Dual Port SRAM Features Functional Description • True dual port memory enables simultaneous access to the shared array from each port ■ Synchronous pipelined operation with Single Data Rate SDR operation on each port
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FullFlex36
Abstract: No abstract text available
Text: FullFlex FullFlex Synchronous DDR Dual-Port SRAM Features • True dual-ported memory allows simultaneous access to the shared array from each port • Synchronous pipelined operation with selectable Double Data Rate DDR or Single Data Rate (SDR) operation on each port
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36-Gb/s
484-ball
256-ball
FullFlex72
CYDD36S72V18)
CYDD18S72V1t
27mmx27mmx2
36Mx36
36Mx18
FullFlex36
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FullFlex36
Abstract: No abstract text available
Text: FullFlex FullFlex Synchronous DDR Dual-Port SRAM Features • True dual-ported memory allows simultaneous access to the shared array from each port • Synchronous pipelined operation with selectable Double Data Rate DDR or Single Data Rate (SDR) operation on each port
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36-Gb/s
484-ball
256-ball
FullFlex72
CYDD36S72V18)
CYDD18S72V1mation
27mmx27mmx2
36Mx36
36Mx18
FullFlex36
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CY7C1440V33
Abstract: No abstract text available
Text: CY7C1440V33 CY7C1442V33 CY7C1446V33 PRELIMINARY 1M x 36/2M x 18/512K x 72 Pipelined SRAM Features • • • • • • • • • • • • • • • • Fast clock speed: 250, 200, and 167 MHz Provide high-performance 3-1-1-1 access rate Fast access time: 2.7, 3.0 and 3.5 ns
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CY7C1440V33
CY7C1442V33
CY7C1446V33
36/2M
18/512K
CY7C1440V33/CY7C1442V33/CY7C1446V33
CY7C1440V33
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K7N321845M
Abstract: K7N323645M
Text: K7N323645M K7N321845M Preliminary 1Mx36 & 2Mx18 Pipelined NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 0.4 History Draft Date Remark 1. Initial document. 1. Add 165FBGA package 1.Update JTAG scan order
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K7N323645M
K7N321845M
1Mx36
2Mx18
2Mx18-Bit
165FBGA
K7N3236
165FBGA
K7N321845M
K7N323645M
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K7M321825M
Abstract: K7M323625M
Text: K7M323625M K7M321825M Preliminary 1Mx36 & 2Mx18 Flow-Through NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Flow Through NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 0.4 0.5 History Draft Date Remark 1. Initial document. 1. Add 165FBGA package 1. Update JTAG scan order
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K7M323625M
K7M321825M
1Mx36
2Mx18
2Mx18-Bit
165FBGA
165FBGA
x18/x36
K7M321825M
K7M323625M
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250ac to 30 v ac
Abstract: CY7C1462V25 CY7C1464V25 CY7C1460V25
Text: CY7C1460V25 CY7C1462V25 CY7C1464V25 PRELIMINARY 1M x 36/2M x 18/512K x 72 Pipelined SRAM with NoBL Architecture Features • Zero Bus Latency, no dead cycles between write and read cycles • Fast clock speed: 250, 200, and 167 MHz • Fast access time: 2.7, 3.0 and 3.5 ns
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CY7C1460V25
CY7C1462V25
CY7C1464V25
36/2M
18/512K
CY7C1460V25
CY7C1462V25
250ac to 30 v ac
CY7C1464V25
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Untitled
Abstract: No abstract text available
Text: WPY512K72V-XMDC M/HITE /MICROELECTRONICS 4MByte 512Kx72 Flow Through Synchronous SRAM Module ADVAN CED * FEATURES • Fast A c c e s s Tim es: 8, 10ns ■ Byte W rite and Global W rite C ap ab ilitie s ■ Fast OE A c c e s s Tim e of 4ns ■ Flo w th ro u gh Data Bus (2-1-1-1 burst)
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WPY512K72V-XMDC
512Kx72)
256Kx18
168-pin
512Kx72;
256Kx72
256Kx36.
512KX72
256Kx36
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Untitled
Abstract: No abstract text available
Text: WPY512K72V-XMDC M/HITE /MICROELECTRONICS 4MByte 512Kx72 Flow Through Synchronous SRAM Module A DVA N CED * FEATURES • Fast A cce ss Tim es: 8 , 1 0ns ■ Byte W r i t e and Global W r i t e C ap a b ilities ■ Fast OE A cce ss Tim e o f 4ns ■ F lo w t h r o u g h Data Bus (2-1-1 -1 burst)
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WPY512K72V-XMDC
512Kx72)
256Kx18
168-pin
512Kx72;
256Kx72
256Kx36.
512KX72
256Kx36
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Untitled
Abstract: No abstract text available
Text: a WHITE /MICROELECTRONICS W PY512K72V-XMDC 4MByte 512Kx72 Flow Through Synchronous SRAM Module A D VAN CED * FEATURES • Fast A c c e s s T im e s : 8, 10ns ■ Byte W r i t e a n d G lo b a l W r i t e C a p a b i lit i e s ■ Fast OE A c c e s s T i m e o f 4 ns
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PY512K72V-XMDC
512Kx72)
512Kx72
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9261A
Abstract: CYM9260 CYM9263 PM44 9261
Text: fax id: 2042 3g~ yr pyprfs^ PRELIMINARY CYM9260 CYM9261A/B CYM9262A/B CYM9263 64K x 72 SRAM 128K x 72 SRAM 256K x 72 SRAM 512K x 72 SRAM Features Module Module Module Module 9262B, 9263 SRAM’s in plastic surface mount packages on an epoxy laminate board with pins. The modules are designed
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CYM9260
CYM9261A/B
CYM9262A/B
CYM9263
18/128K
168-position
CYM9260,
CYM9261,
CYM9262
CYM9263
9261A
PM44
9261
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9261A
Abstract: No abstract text available
Text: fax id: 2042 3g~ yr pyprfs^ PRELIMINARY CYM9260 CYM9261A/B CYM9262A/B CYM9263 64K x 72 SRAM 128K x 72 SRAM 256K x 72 SRAM 512K x 72 SRAM Features • Operates at 50 MHz. • Uses 64K x 1 8 /1 28K x 18 or 256K x 18 high perform ance synchronous SRAMs. • 168-position Angled DIMM from Amp p/n 179508-2
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CYM9260
CYM9261A/B
CYM9262A/B
CYM9263
168-position
CYM9260,
CYM9262
CYM9263
9262B,
9261A
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