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    512Kx48

    Abstract: No abstract text available
    Text: WS512K48-XG4WX HI-RELIABILITY PRODUCT 512Kx48 SRAM MODULE ADVANCED* FEATURES • 2V Data Retention Devices Available WS512K48L-XXX Low Power Version ■ Access Times 17, 20, 25, 35ns ■ Packaging: • 116 Lead, 40.0mm Hermetic CQFP (Package 504) ■ TTL Compatible Inputs and Outputs


    Original     		PDF WS512K48-XG4WX 512Kx48 WS512K48L-XXX WS512K48-XG4WX 512K48

    MO-47AE

    Abstract: DSP96002 EDI8L24128C EDI8L32128C EDI8L32256C EDI8L32512C EDI8L3265C 512Kx48
    Text: EDI8L32256C 256Kx32 SRAM Module 256Kx32, 5V Static Ram Features 256Kx32 bit CMOS Static DSP Memory Solution • Texas Instruments TMS320C3x, TMS320C4x • Analog SHARCTM DSP • Motorola DSP96002 Random Access Memory Array • Fast Access Times: 15, 17, 20 and 25ns


    Original     		PDF EDI8L32256C 256Kx32 256Kx32, TMS320C3x, TMS320C4x DSP96002 MO-47AE EDI8L32256C MO-47AE DSP96002 EDI8L24128C EDI8L32128C EDI8L32512C EDI8L3265C 512Kx48

    BittWare

    Abstract: No abstract text available
    Text: COINCIDENCE? The best choice for your SHARC solution might be right under your nose. When you’re ready to solve your demanding DSP project with a SHARC-based system, you’ll want to find to best help you can get. You’ll want a company with more SHARC experience and practical application expertise than any other. You’ll want a company


    Original     		PDF 16-bit 32-bit BittWare

    EDI8L32128V

    Abstract: EDI8L32512V MO-47AE TMS320LC31
    Text: EDI8L32256V 256Kx32 SRAM 256Kx32 , 3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns, allowing the creation of a no wait state DSP memory solution. The device can be configured as a 256Kx32 and used to


    Original     		PDF EDI8L32256V 256Kx32 256Kx32 EDI8L32256V TMS320LC31, 512Kx16. 512Kx48 256Kx24s EDI8L24256V) EDI8L32128V EDI8L32512V MO-47AE TMS320LC31

    DSP96002

    Abstract: EDI8L24128C EDI8L32128C EDI8L32256C EDI8L32512C EDI8L3265C MO-47AE block diagram of of TMS320C4X
    Text: EDI8L32256C Features 256Kx32, 5V Static Ram T NO The EDI8L32256C is a high speed, 5V, 8 megabit SRAM. The device is available with access times of 15, 17, 20 and 25ns, allowing the creation of a no wait state DSP memory solution. The device can be configured as a 256Kx32 and used to


    Original     		PDF EDI8L32256C 256Kx32, EDI8L32256C 256Kx32 TMS320C30/31 320C32 TMS320C4x DSP96002 512Kx16. 512Kx48 EDI8L24128C EDI8L32128C EDI8L32512C EDI8L3265C MO-47AE block diagram of of TMS320C4X

    cd 5151

    Abstract: 512kx4 EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 EDI8L32256V ADSP2106XL
    Text: EDI8L32256V T NO 256Kx32 SRAM FEATURES n 256Kx32 bit CMOS Static The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns, allowing the creation of a no wait state DSP memory solution. n DSP Memory Solution


    Original     		PDF EDI8L32256V 256Kx32 EDI8L32256V 21060L 21062L TMS320LC31 512Kx16BS2\ cd 5151 512kx4 EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 ADSP2106XL

    Untitled

    Abstract: No abstract text available
    Text: a WHITE /MICROELECTRONICS 512Kx48SRAM MODULE WS512K48-XG4WX ADVANCED* FEATURES • ■ ■ ■ A ccess Tim es 17, 20, 25, 35ns ■ 2V D ata R etention Device Packaging: ■ TTL C om p atible Inputs and O utputs • 116 Lead, 40.0m m H e rm e tic CQFP Package 504


    OCR Scan     		PDF WS512K48-XG4WX 512Kx48SRAM S512K

    Untitled

    Abstract: No abstract text available
    Text: a WHITE /MICROELECTRONICS 512Kx48 SRAM MODULE WS512K48-XG4WX ADVANCED* FEATURES • A c c ess T im e s 17, 20, 25, 35ns ■ 2 V D ata R e te n tio n D evice ■ Packaging: ■ T T L C o m p a tib le In p uts and O u tp uts • 116 Lead, 4 0.0m m H e rm e tic CQFP Package 504


    OCR Scan     		PDF WS512K48-XG4WX 512Kx48 512K48

    Untitled

    Abstract: No abstract text available
    Text: WS512K48-XG4WX M/HITE /M ICROELECTRONICS 512Kx48 SRAM MODULE ADVANCED* FEATURES • Acce ss Tim e s 17, 20, 25, 35ns ■ 2V Data R eten tio n Device ■ Packaging: ■ TTL C o m p a tib le Inputs and Outp u ts • 116 Lead, 4 0 .0 m m H e rm e tic CQFP Package 504


    OCR Scan     		PDF WS512K48-XG4WX 512Kx48 512K48

    Untitled

    Abstract: No abstract text available
    Text: a M/HITE /MICROELECTRONICS 512Kx48 SRAM MODULE WS512K48-XG4WX ADVANCED* FEATURES • A c c e s s T im e s 17, 20, 25, 35ns ■ 2V Data R etention D evice ■ Packaging: ■ T T L Com patible Inputs and Outputs • 116 Lead, 40.0m m H erm etic CQFP Packag e 504


    OCR Scan     		PDF 512Kx48 WS512K48-XG4WX 512K48

    Untitled

    Abstract: No abstract text available
    Text: KH ED/8L322S6V 25SKx32 SRAM ELECTRONIC DESIGNS NC. 256KX32,13V, StaticRAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12,15, 256Kx32 bit C M O S Static 17 and 20ns, allowing the creation of a no wait state DSP


    OCR Scan     		PDF ED/8L322S6V 25SKx32 256KX32 21060L 21062L TMS320LC31 MO-47AE EDI8L32256V EDI8L32256V20AC

    256kx32

    Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 Theta-J
    Text: ^EDI EDI8L32256V 256Kx32 SRAM ELECTRONIC DESIGNS. INC 256Kx32,3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit 256Kx32 bit CMOS Static S RAM. The device is available with access times of 12,15, DSP Memory Solution 17 and 20ns, allowing the creation of a no w ait state DSP


    OCR Scan     		PDF EDI8L32256V 256Kx32 21060L ADSP-21062L TMS320LC31 MO-47AE EDI8L32256V avai8L32256V15AC ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE Theta-J

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI8L32256C 256KX32 SRAM Module ELECTRONIC DESIGNS, INC 256Kx32,5V Static Ram ¡Features The EDI8L32256C is a high speed, 5V, 8 megabit SRAM. 256Kx32 bit CMOS Static The device is available with access times of 15,17, 20and 25ns, allowing the creation of a no wait state DSP memory


    OCR Scan     		PDF EDI8L32256C 256KX32 EDI8L32256C 20and TMS320C3x, TMS320C4x DSP96002

    Untitled

    Abstract: No abstract text available
    Text: ^EDI ED I8L32256V 256Kx32 SRAM ELECTRONIC DESIGNS, INC 256Kx32,3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit 256Kx32 bit CMOS Static SRAM. The device is available with access times of 12,15, DSP Memory Solution 17 and 20ns, allowing the creation of a no w ait state DSP


    OCR Scan     		PDF I8L32256V 256Kx32 EDI8L32256V 21060L 21062L TMS320LC31 TMS320LC31,