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    511P8 Search Results

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    511P8 Price and Stock

    Broadcom Limited ATF-511P8-BLK

    RF MOSFET E-PHEMT 4.5V 8LPCC
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    DigiKey ATF-511P8-BLK Bulk
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    Broadcom Limited ATF-511P8-TR1

    RF MOSFET E-PHEMT 4.5V 8LPCC
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    DigiKey ATF-511P8-TR1 Reel
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    Qualcomm B39242B7511P810

    BAND PASS FILTER
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    Richardson RFPD B39242B7511P810 1
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    Qualcomm RFFE Filter Products B39242B7511P810

    BAW FILTER (Alt: B39242B7511P810)
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    Avnet Asia B39242B7511P810 16 Weeks 5,000
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    Qualcomm RFFE Filter Products B39781B8511P810

    Duplexer, 9 Pin, 0806 [2016 Metric], WCDMA Band 13 (Alt: B39781B8511P810)
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    Avnet Asia B39781B8511P810 16 Weeks 15,000
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    511P8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ATF-511P8-BLK

    Abstract: SCH 298 MO-229 HEMT marking P ATF-511P8
    Text: ATF-511P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package Data Sheet Description Features Avago Technologies’s ATF-511P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDECstandard leadless plastic chip carrier LPCC [3] package.


    Original     		PDF ATF-511P8 ATF-511P8 5989-0003EN AV02-3620EN ATF-511P8-BLK SCH 298 MO-229 HEMT marking P

    transistor c815

    Abstract: ATF-511P8 LL1005-FH4N7S BCV62C LL1005-FH3N3S MGA-53543 RG200D Medium Power Bipolar Transistors rohm
    Text: ATF-511P8 900 MHz High Linearity Amplifier Application Note 1373 Introduction Avago’s ATF-511P8 is an ­ enhancement mode PHEMT ­designed for high linearity and medium power applications. With an OIP3 of 41 dBm and a 1 dB compression point of 25 dBm, the ATF-511P8 is well suited as a base


    Original     		PDF ATF-511P8 ATF-511P8 5988-9547EN AV02-0972EN transistor c815 LL1005-FH4N7S BCV62C LL1005-FH3N3S MGA-53543 RG200D Medium Power Bipolar Transistors rohm

    ATF-511P8

    Abstract: R747 transistor c815 BCV62B BCV62C LL1005-FH3N3S LL1005-FH4N7S MGA-53543 RG200D
    Text: Agilent ATF-511P8 900 MHz High Linearity Amplifier Application Note 1373 Introduction Agilent’s ATF-511P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 41 dBm and a 1 dB compression point of 25 dBm, the ATF-511P8 is well


    Original     		PDF ATF-511P8 ATF-511P8 5988-9547EN R747 transistor c815 BCV62B BCV62C LL1005-FH3N3S LL1005-FH4N7S MGA-53543 RG200D

    1px marking code

    Abstract: 1px transistor ATF-511P8 ATF-511P8-BLK ATF-511P8-TR1 ATF-511P8-TR2 MO229
    Text: Agilent ATF-511P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and P1dB • Low noise figure Pin 8 Pin 7 Drain Pin 6 Pin 5 Source (Thermal/RF Gnd) Description


    Original     		PDF ATF-511P8 5988-8246EN 1px marking code 1px transistor ATF-511P8-BLK ATF-511P8-TR1 ATF-511P8-TR2 MO229

    630-819

    Abstract: ATF-511P8 0402CG189C9B200 0402CG100J9B200 BCV62B LL1005-FH1N0S MGA-53543 ML200D 630802 AN1327
    Text: ATF-511P8 1900 MHz High Linearity Amplifier Application Note 1327 Introduction Avago Technologies ATF-511P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 41.3 dBm and a 1 dB compression point of 26 dBm, the ATF-511P8 is well suited as a base station


    Original     		PDF ATF-511P8 wellATF-54143 com/pdf/AN-0002 AV02-0973EN 630-819 0402CG189C9B200 0402CG100J9B200 BCV62B LL1005-FH1N0S MGA-53543 ML200D 630802 AN1327

    ATF-511P8

    Abstract: No abstract text available
    Text: Agilent ATF-511P8 Reliability Data Sheet Introduction Reliability Prediction Model The ATF-511P8 is fabricated with Agilent Technologies’ new PHEMT C process. This process has been qualified at wafer level and observed a similar robustness when compared to other PHEMT


    Original     		PDF ATF-511P8 ATF-511P8 JESD22-A113-A 5988-8380EN

    transistor Amp 2054 equivalent

    Abstract: cdma complete layout drawing ATF-511P8 0402CG189C9B200 0402CG100J9B200 BCV62B LL1005-FH1N0S MGA-53543 ML200D 511P8
    Text: High Linearity and Medium Power Applications using the Agilent ATF-511P8 PHEMT Application Note 1327 Introduction Agilent Technologies ATF-511P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 41.3 dBm and a 1 dB


    Original     		PDF ATF-511P8 ATF-511P8 com/pdf/AN-0002 5988-8405EN transistor Amp 2054 equivalent cdma complete layout drawing 0402CG189C9B200 0402CG100J9B200 BCV62B LL1005-FH1N0S MGA-53543 ML200D 511P8

    1px marking code

    Abstract: 1px transistor 1px code ATF-511P8 ATF-511P8-TR1 ATF-511P8-BLK ATF-511P8-TR2 MO229 1P LNA
    Text: Agilent ATF-511P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and P1dB • Low noise figure Pin 8 Pin 7 Drain Pin 6 Pin 5 Source (Thermal/RF Gnd) Description


    Original     		PDF ATF-511P8 5988-8246EN 5989-0003EN 1px marking code 1px transistor 1px code ATF-511P8-TR1 ATF-511P8-BLK ATF-511P8-TR2 MO229 1P LNA

    1px marking code

    Abstract: ATF-511P8 1px transistor ATF-511P8-BLK ATF-511P8-TR1 ATF-511P8-TR2 MO229 SF128
    Text: ATF-511P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Description Avago Technologies’s ATF-511P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDEC-standard leadless plastic chip carrier


    Original     		PDF ATF-511P8 5988-8246EN 5989-0003EN 1px marking code 1px transistor ATF-511P8-BLK ATF-511P8-TR1 ATF-511P8-TR2 MO229 SF128

    heds 5310

    Abstract: VC 5022-2 p605 mosfet HEDS 6310 encoder heds 6310 acsl 086 s SMD MOSFET DRIVE 4606 Alps GMR sensor transistor 5503 dm logitech x 530
    Text: Avago Technologies www.avagotech.com AVAGO TECHNOLOGIES EBV Elektronik GmbH & Co. KG www.ebv.com Оптоэлектронные и СВЧ компоненты «Аваго Текнолоджиз» АПРЕЛЬ ОПТОЭЛЕКТРОННЫЕ И СВЧ КОМПОНЕНТЫ «АВАГО ТЕКНОЛОДЖИЗ»


    Original     		PDF