Contextual Info: s, AP A d va n c e d P e rfo rm a n c e Series V DSs = 2 5 0 V 206 3 N Channel Power M O SFET £4321 F e a tu re s •Low ON resistance. ■Very high-speed switching. • Low-voltage drive. • M icaless package facilitating mounting. A b so lu te M ax im u m R a tin g s a t Ta = 25°C

Contextual Info: 2SK2044 AP A d v a n c e d P e rfo rm a n c e Series _ Vdss“ 600V N Channel Power M OSFET £4286 F e a tu r e s • Low ON resistance. ■Very high-speed sw itching. • H igh-speed diode (trr= 120ns). ■M icaless package facilitatin g mounting.

Contextual Info: 2SK1891 2090_LD Low Drive Series V Dss = 3 0 V 2093 INI Channel Power MOSFET 4206 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Surface mount type device making the following possible. • Reduction in the number of m anufacturing processes for 2SK1891-applied equipment.

d3s diode

Contextual Info: 2SK1906 LD L o w D rive S eries V D3S= 1 0 0 V 2063 N Channel Power M OSFET F e a tu re s • Low ON resistance. - Very high-speed switching. •Low-voltage drive. ■M icaless package facilitating mounting. A b s o lu te M ax im u m R a tin g s a t Ta = 25°C

AX-9832

Contextual Info: 2SK1921 AP A d va n ce d P e rfo rm a n c e Series V d 5s = 2 5 0 V N Channel Power M OSFET 4310 F eatures - Low ON resistance. • Very high-speed switching. • Low-voltage drive. bsolute M axim um R atings atTa=25°C Drain to Source Voltage V d ss

2SJ257

Contextual Info: Ordering num ber:EN4242 2SJ257 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. - Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ257-applied equipment.

2SK2010

Contextual Info: Ordering num ber:EN 4319 _ 2SK2010 No.4319 N -Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • M icaless package facilitating mounting. A b so lu te M axim um R a tin g s at Ta = 25°C

EN4233

Abstract: 2SJ259
Contextual Info: Ordering number:EN4233 P-Channel Silicon MOSFET 2SJ259 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ259] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.

2SJ257

Contextual Info: Ordering number:EN4242 P-Channel Silicon MOSFET 2SJ257 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ257] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.

2SK1891

Abstract: I30U
Contextual Info: 2SK1891 2093 2090 LD L o w D riv e S e rie s V DSS= 3 0 V N Channel Power MOSFET 4206 F e a tu re s • Low ON resistance. •Very high-speed switching. ■Low-voltage drive. ■Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SK1891-applied equipment.

2SK1898

Abstract: 2824I
Contextual Info: 2SK1898 2093 LD L o w D riv e S e rie s V DSs = 6 0 V 2090 N Channel Power MOSFET 4209 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in th e num ber of m anufacturing processes for 2SK1898-applied equipm ent.

2SK2012

Contextual Info: Ordering number:EN4321A N-Channel Silicon MOSFET 2SK2012 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SK2012]

2052B

Abstract: en43-1 EN4310 2SK192
Contextual Info: Ordering num ber:E N 4310 2SK192Í No.4310 N-Channel MOS Silicon FET SA ÍYO i Very High-Speed Switching Applications F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atings a tT a = 25°C Drain-to-Source Voltage

sanyo wx series

Abstract: sanyo wx 2SJ277
Contextual Info: 2SJ277 2093 2090 LD L o w D rive Series V Ds s = 1 0 0 V P Channel Power MOSFET 4241 F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ277-applied equipment.

2SK2044

Contextual Info: Ordering number:ENN4286A N-Channel Silicon MOSFET 2SK2044 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · High-speed diode built in trr=120ns . · Micaless package facilitating easy mounting.

2SJ272

Contextual Info: Ordering number:EN4238 P-Channel Silicon MOSFET 2SJ272 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ272]

V222A

Contextual Info: 2SK1907 2093 2090 LD Low D rive S e rie s VdsS= 100V N Channel Power MOSFET i|M226 F e a tu re s - Low ON resistance. - Very high-speed switching. • Low-voltage drive. • Surface mount type device making the following possible. • Reduction in the number of m anufacturing processes for 2SK1907-applied equipment.

2SJ275

Contextual Info: Ordering number:EN4240 2SJ275 No.4240 P-C hannel MOS Silicon FET SANTO Very High-Speed Switching Applications j F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible.

100AVS

Contextual Info: 2SK1900 2090 2093 LD L o w D rive S e r i e s VDSs = 60V N Channel Power MOSFET E'42 10 F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SK1900-applied equipm ent.

Contextual Info: Ordering number:EN4321A N-Channel Silicon MOSFET _ 2SK2012 m i “ Ultrahigh-Speed Switching Applications Package Dimensions Features •Lo w O N resistance. •Ultrahigh-speed switching. -Low-voltage drive. •Micaless package facilitating mounting.

Contextual Info: Ordering number: EN4287A 2SK2045 N0.4287A N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications F eatures • Low ON resistance. • Ultrahigh-speed switching. • High-speed diode built in tn- = 140ns . • Micaless package facilitating easy mounting.

2SK1909

Abstract: i0c0
Contextual Info: 2SK1909 2093 2090 LD L o w D rive S eries V DSS= 1 0 0 V N Channel Power MOSFET 4227 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SK1909-applied equipm ent.

2SK1889

Contextual Info: 2SK1889 2093 2090 LD L o w D rive S eries V DSs = 30V N Channel Power MOSFET F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. ■Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SK1889-applied equipm ent.

TR80

Abstract: 2SK1898
Contextual Info: Ordering number : EN 4209 2SK1898 No.4209 N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface mount type device making the following possible.