WCs MARKING
Abstract: SMD MARKING code ASC SMD MARKING CODE RAC 5117400
Text: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB 5116400BJ-50/-60 HYB 5117400BJ-50/-60 HYB 3116400BJ/BT-50/-60 HYB 3117400BJ-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation
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5116400BJ-50/-60
5117400BJ-50/-60
3116400BJ/BT-50/-60
3117400BJ-50/-60
400BJ-50/-60
400BJ/BT-50/-60
P-TSOPII-26/24-1
GPX05857
WCs MARKING
SMD MARKING code ASC
SMD MARKING CODE RAC
5117400
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HYB5117400BJ
Abstract: HYB5117400BT hyb5117400
Text: 4M x 4-Bit Dynamic RAM 5117400BJ -50/-60/-70 5117400BT -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
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HYB5117400BJ
HYB5117400BT
5117400BJ/BT-50/-60/-70
P-SOJ-26/24
GPJ05628
GPX05857
hyb5117400
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Untitled
Abstract: No abstract text available
Text: RF5117C 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER VCC VCC 13 RF IN 1 12 RF OUT BIAS GND1 2 11 RF OUT PWR SEN 3 10 RF OUT Bias PWR REF 4 5 6 7 8 Applications IEEE802.11B WLAN Applications IEEE802.11G WLAN Applications 2.5GHz ISM Band Applications
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RF5117C
16-Pin,
IEEE802
RF5117C
23dBm)
DS071018
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Untitled
Abstract: No abstract text available
Text: 8M x 32-Bit Dynamic RAM Module HYM 328020S/GS-50/-60 Preliminary Information • 8 388 608 words by 32-bit organization alternative 16 777 216 words by 16-bit • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time
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32-Bit
328020S/GS-50/-60
16-bit)
32-Bit
GLS05859
L-SIM-72-15
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Untitled
Abstract: No abstract text available
Text: 8M x 32-Bit Dynamic RAM Module HYM 328020S/GS-50/-60 Preliminary Information • 8 388 608 words by 32-bit organization alternative 16 777 216 words by 16-bit • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time
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PDF
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32-Bit
328020S/GS-50/-60
16-bit)
32-Bit
LSIM7215
GLS05859
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SiGe 2577
Abstract: RF5117 laptop mini pci slot pin details 54MBPS RF5117PCBA-41X 41dBm
Text: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications
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RF5117
IEEE802
RF5117
23dBm)
SiGe 2577
laptop mini pci slot pin details
54MBPS
RF5117PCBA-41X
41dBm
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Untitled
Abstract: No abstract text available
Text: HB56T433D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56T433D is a 4 M x 32 dynamic RAM Small Outline DIMM S.O.DIMM , mounted 8 pieces of 16 Mbit DRAM (HM 5117400BTS/BLTS) sealed in TSOP package. An outline of the HB56T433D is 72-pin
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HB56T433D
304-word
32-bit
ADE-203Rev.
5117400BTS/BLTS)
72-pin
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 HYB 5117400BT -50/-60/-70 Advanced Inform ation • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns -50 version
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OCR Scan
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PDF
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5117400BJ
5117400BT
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 HYB 5117400BT -50/-60/-70 A d v a n c e d In fo rm a tio n • 4 194 30 4 w o rd s by 4 -b it o rg a n iz a tio n S in g le + 5 V ± 10 % sup ply • 0 to 70 C o p e ra tin g te m p e ra tu re Low p o w e r dissip a tio n
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5117400BJ
5117400BT
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5117400BJ-50
Abstract: wd71
Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 ’C operating temperature • Performance: • • • • • • • • -50 -60 -70 ^RAC RAS access time 50 60 70 ns ÍCAC
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5117400BJ
P-SOJ-26/24
5117400BJ-50/-60/-70
85max
5117400BJ-50
wd71
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance: ^RAC RAS access time -50 -60 -70 50 60 70 ns ns fcAC CAS access time 13 15 20 ^AA
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5117400BJ
5117400BJ-50/-60/-70
P-SOJ-26/24
85max
fl23Sb05
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5117400B
Abstract: in9668 HM5117400BLS-6 HM5117400BS6
Text: 5117400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-369A Z Rev. 1.0 Nov. 15, 1995 Description The Hitachi 5117400B is a CMOS dynamic RAM organized 4,194,304 word x 4 bit. It employs the most advanced CMOS technology for high performance and low power. The HM 5117400B offers Fast Page Mode
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HM5117400B
304-word
ADE-203-369A
5117400B
mW/550
mW/495
B400B
HM511740
HM5M7400B
in9668
HM5117400BLS-6
HM5117400BS6
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BST60
Abstract: No abstract text available
Text: TOSHIBA 5117400BSJ/BST60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheT C 5117400B S J/B S T is the new generation dynamic RAM organized 4,194,304 word by 4 bits. T he T C 5117400B S J/ BST utilizes Toshiba's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operat
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TC5117400BSJ/BST60/70
5117400B
5117400BSJ/BST
300mil)
BST60
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Untitled
Abstract: No abstract text available
Text: HB56A832 Series 8,388,608-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The H B 56A 832 is a 8M x 32 dynamic RAM module, mounted 16 pieces o f 16Mbit DRAM H M 5117400B S sealed in SOJ package. An outline o f the H B 5 6 A 8 3 2 is 72-pin single in-line package.
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HB56A832
608-word
32-bit
ADE-203Rev.
16Mbit
5117400B
72-pin
44Sb203
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Q67100-Q2006
Abstract: Q67100-Q982 514100BJ
Text: SIEMENS 4M X 36-Bit Dynamic RAM Module HYM 364020S/GS-60/-70 Preliminary Inform ation 4 194 304 words by 36-Bit organization alternative 8 388 608 words by 18-bit CAS-before-RAS refresh RAS-only-refresh Hidden-refresh Fast access and cycle time 60 ns access tim e
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36-Bit
364020S/GS-60/-70
18-bit)
S23SbOS
00717B3
Q67100-Q2006
Q67100-Q982
514100BJ
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Q67100-Q2007
Abstract: Q67100-Q985
Text: SIEM EN S 8M x 36-Bit Dynamic RAM Module HYM 368020S/GS-60/-70 Prelim inary Inform ation • 24 decoupling capacitors mounted on substrate 8 388 608 words by 36-bit organization alternative 16 777 216 words by 18-bit All inputs, outputs and clocks fully
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36-Bit
368020S/GS-60/-70
18-bit)
CMOS-132
fl23SbOS
Q67100-Q2007
Q67100-Q985
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G1235
Abstract: No abstract text available
Text: SIEMENS 8M X 32-Bit Dynamic RAM Module HYM 328020S/GS-50/-60 Advanced Information • • SIM M module with 8 388 608 words by 32-bit organization for P C main memory applications Fast access and cycle time 50 ns access time 90 ns cycle time -50 version
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32-Bit
328020S/GS-50/-60
0235bD5
G1235M2
32-Bit
L-SIM-72-15
01E3EM3
G1235
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Untitled
Abstract: No abstract text available
Text: ADE-203-369 Z 5117400B/BL Series 4,194,304-word x 4-bit Dynamic Random Access Memory Preliminary HITACHI T h e H ita c h i H M 5 1 1 7 4 0 0 B /B L is a C M O S dynam ic R A M organized 4 ,194,304-word x 4-bit. It em ploys the m ost advanced C M O S technology
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ADE-203-369
HM5117400B/BL
304-word
117400B
5117400BS-6
5117400BS-7
5117400BS-8
5117400BLS-6
5117400BLS-7
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27C256AG
Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
Text: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series
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512kx8512k
28512A
674100H
671400H
8128B
1664H
9127H
8127H
27C256AG
4265C
514270
101AG
BK 4367
4165A
5118160
4270-D
4096A
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L-SIM-72-14
Abstract: No abstract text available
Text: SIEMENS 8M X 36-Bit Dynamic RAM Module HYM 368020S/GS-60/-70 Advanced Inform ation • 8 388 608 words by 36-bit organization alternative 16 777 216 words by 18-bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time
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OCR Scan
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PDF
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36-Bit
368020S/GS-60/-70
18-bit)
L-SIM-72-14
368020S/GS-80/-70
36-Bit
L-SIM-72-14
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Untitled
Abstract: No abstract text available
Text: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70
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P-SOJ-26/20-5
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thv8
Abstract: HYB39S16800T 16m x 4 hyb
Text: SIEMENS SIMM-Modules Product View S IM M -M odules Product View SIMM-Modules non-parity 2M X 32 FPM EDO FPM G = Gold leaded Semiconductor Group 26 EDO SIEMENS SIMM-Modules Product View 4M x 3 2 8M FPM EDO 32 FPM L-SIM-72-12 HYM 324020S/GS X EDO L-SIM-72-15
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L-SIM-72-12
324020S/GS
324025S/GS
L-SIM-72-15
328020S/GS
328025S/GS
364020S/GS
L-SIM-72-13
364035S/GS
thv8
HYB39S16800T
16m x 4 hyb
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 32-Bit Dynamic RAM Module HYM 324020S/GS-50/-60 Advanced Information • 4 194 304 words by 32-bit organization alternative 8 388 608 words by 16-bit • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time
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OCR Scan
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PDF
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32-Bit
324020S/GS-50/-60
16-bit)
324020S/GS-50)
324020S/GS-60)
L-SIM-72-12
324020S/GS-50/-60
32-Bit
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Untitled
Abstract: No abstract text available
Text: SIEMENS 8M X 32-Bit Dynamic RAM Module HYM 328020S/GS-50/-60 Preliminary Information • 8 388 608 words by 32-bit organization alternative 16 777 216 words by 16-bit • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time
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OCR Scan
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PDF
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32-Bit
328020S/GS-50/-60
16-bit)
aS35bDS
32-Bit
L-SIM-72-15
fl53SbOS
0A535tj
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