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    511740 Search Results

    511740 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    76745-117-40LF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical stacked header, Through Hole, Double Row, 40 Positions, 2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
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    511740 Price and Stock

    ROHM Semiconductor MSM5117405F-60T-DKX

    IC DRAM 16M PARALLEL 26TSOP
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    DigiKey MSM5117405F-60T-DKX Tray 3,188 1
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    Weidmüller Interface GmbH & Co. KG 9511740000

    TERM BLK 6P SIDE ENTRY 10MM PCB
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    Amphenol Communications Solutions 76745-117-40LF

    CONN HDR 40POS 0.100" STACK T/H
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    Carling Technologies LT-1511-740-012

    SWITCH TOGGLE SPST 15A 125V
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    Master Electronics LT-1511-740-012 78
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    Glass Acoustic Innovations Co Ltd BCD-3951-17-4-006

    SPEAKER 4OHM 30W TOP PORT 86DB
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    DigiKey BCD-3951-17-4-006 Box
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    511740 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    5117400 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    511740 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WCs MARKING

    Abstract: SMD MARKING code ASC SMD MARKING CODE RAC 5117400
    Text: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB 5116400BJ-50/-60 HYB 5117400BJ-50/-60 HYB 3116400BJ/BT-50/-60 HYB 3117400BJ-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation


    Original     		PDF 5116400BJ-50/-60 5117400BJ-50/-60 3116400BJ/BT-50/-60 3117400BJ-50/-60 400BJ-50/-60 400BJ/BT-50/-60 P-TSOPII-26/24-1 GPX05857 WCs MARKING SMD MARKING code ASC SMD MARKING CODE RAC 5117400

    k2624

    Abstract: D-50 MSM5117405 MSM5117405D MSM5117405D-50 MSM5117405D-60 MSM5117405D-70
    Text: 作成 ：1999 年 1 月 電子デバイス M SM 5117405D 4,194,304-Word x 4-Bit DYNAMIC RAM : EDO 機 能 付 き 高 速 ペ ー ジ モ ー ド • 概要 5117405D はCMOS プロセス技術を用いた 4,194,304 ワードx4 ビット構成のダイナミックラ


    Original     		PDF 5117405D 304-Word MSM5117405D SOJ26/24 300mil SOJ26/24-P-300-1 MSM5117405D-xxSJ) TSOPII26/24-P-300-1 MSM5117405D-xxTS-K) k2624 D-50 MSM5117405 MSM5117405D MSM5117405D-50 MSM5117405D-60 MSM5117405D-70

    SPT0305

    Abstract: Q67100-Q1101 q67100-q1102 WCs MARKING SMD MARKING code ASC code marking rah
    Text: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature


    Original     		PDF 5116405BJ-50/-60 5117405BJ-50/-60 3116405BJ/BT 3117405BJ/BT-50/-60 405BJ-50/-60 405BJ/BT P-TSOPII-26/24-1 GPX05857 SPT0305 Q67100-Q1101 q67100-q1102 WCs MARKING SMD MARKING code ASC code marking rah

    5J-70

    Abstract: NT511740C5J-60 NT511740C5J NT511740C5J-50 NT511740C5J-70 4 bit dynamic ram NT511740C5J-XX
    Text: 4,194,304-word x 4-bit Dynamic RAM : Fast Page Mode with EDO 511740C5J NT 511740C5J Data Sheet 1 4,194,304-word x 4-bit Dynamic RAM : Fast Page Mode with EDO 511740C5J 1. DESCRIPTION…………………………………………………………………………….…….3


    Original     		PDF 304-word NT511740C5J 511740C5J 5J-70 NT511740C5J-60 NT511740C5J NT511740C5J-50 NT511740C5J-70 4 bit dynamic ram NT511740C5J-XX

    NT511740C5J-60

    Abstract: NT5117405J Nanya Technology NT511740C5J NT511740C5J-50 NT511740C5J-70
    Text: 5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO NT 511740C5J Data Sheet 1 NANYA TECHNOLOGY CORP. reserves the right to change products and specifications without notice. NANYA TECHNOLOGY CORP 5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO


    Original     		PDF NT5117405J 304-word 511740C5J NT511740C5J-60 NT5117405J Nanya Technology NT511740C5J NT511740C5J-50 NT511740C5J-70

    MSM5117400

    Abstract: No abstract text available
    Text: O K I Semiconductor 5117400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N T he M SM 5117400 is a n ew gen eratio n d yn am ic org an ized as 4,194,304-word x 4-bit. T he technology used to fabricate the M SM 5 1 17400 is O K I's C M O S silicon gate process technology.


    OCR Scan     		PDF MSM5117400 304-Word MSM5117400 cycles/32ms capab40

    5117404

    Abstract: No abstract text available
    Text: HY 5117404A Series “H Y U N D A I 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The 5117404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The 5117404A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 117404A HY5117404A HY5117404A 1A038-10-MAY95 DD45DD HY5117404AJ HY5117404ASLJ HY51174CMAT 5117404

    Untitled

    Abstract: No abstract text available
    Text: HB56T433D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56T433D is a 4 M x 32 dynamic RAM Small Outline DIMM S.O.DIMM , mounted 8 pieces of 16 Mbit DRAM (HM 5117400BTS/BLTS) sealed in TSOP package. An outline of the HB56T433D is 72-pin


    OCR Scan     		PDF HB56T433D 304-word 32-bit ADE-203Rev. 5117400BTS/BLTS) 72-pin

    hm5x1

    Abstract: No abstract text available
    Text: HM5116405 Series 5117405 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-633 C Z Rev. 3.0 Feb. 27, 1997 Description The Hitachi H M 5116405 Series, HM 5117405 Series are CMOS dynamic RAMs organized 4,194,304-word x 4-bit. They employ the most advanced CMOS technology for high performance and low power. The


    OCR Scan     		PDF HM5116405 HM5117405 304-word ADE-203-633 26-pin ns/60 ns/70 hm5x1

    5117405

    Abstract: No abstract text available
    Text: HM5116405 Series 5117405 Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-633A Z Rev. 1.0 Oct. 14,1996 Description The Hitachi HM5116405 Series, H M 5117405 Series are CMOS dynamic RAMs organized 4,194,304-word X 4-bit. They employ the m ost advanced CMOS technology for high performance and low power. The


    OCR Scan     		PDF HM5116405 HM5117405 304-word ADE-203-633A 26-pin ns/70 5117405

    Q907

    Abstract: Q67100-Q915 Q554b
    Text: SIEM ENS 4 M X 4-Bit Dynamic RAM 2 k-refresh HYB 5117400AJ-50/-60/-70/-80 HYB 5117400ASJ-50/-60/-70/-80 Preliminary Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time:


    OCR Scan     		PDF 5117400AJ-50/-60/-70/-80 5117400ASJ-50/-60/-70/-80 235b05 D0SSH72 Q907 Q67100-Q915 Q554b

    M5117405

    Abstract: msm5117405a Q020G m51174
    Text: O K I Semiconductor_ MSM5 1 174 05 A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION T he M SM 5117405A is a4,194,304-word x 4-bit d yn am ic R A M fab ricated in O K I’s C M O S silico n gate technology. The M SM 5117405A ach ieves h ig h in teg ratio n , high-speed operatio n, and low -pow er


    OCR Scan     		PDF MSM5117405A_ 304-Word MSM5117405A 26/24-pin cycles/32 M5117405 Q020G m51174

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HYB 5116405BJ/BT -50/-60/-70 HYB 5117405BJ/BT -50/-60/-70 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO P re lim in a ry In fo rm a tio n m ax. 6 6 0 m W a ctive • 4 194 3 0 4 w o rd s by 4 -b it o rg a n iz a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 HYB 5117400BT -50/-60/-70 Advanced Inform ation • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns -50 version


    OCR Scan     		PDF 5117400BJ 5117400BT

    Untitled

    Abstract: No abstract text available
    Text: M UT" >5" 5 HB56A441BR Series 4,194,304-Word x 40-Bit High Density Dynamic RAM Module Rev. 1 Mar. 1,1994 HITACHI The HB56A441BR is a 4 M x 40 dynamic RAM m odule, m ounted 10 pieces of 16-M bit DRAM H M 5117400A S sealed in SOJ package. An outline of the HB56A441BR is 72-pin single in­


    OCR Scan     		PDF HB56A441BR 304-Word 40-Bit 117400A 72-pin HB56A441BR-6A

    Untitled

    Abstract: No abstract text available
    Text: HM5116400 Series 5117400 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-648D Z Rev. 4.0 Jun. 12, 1997 Description The Hitachi H M 5116400 Series, H M 5117400 Series are CMOS dynamic RAMs organized 4,194,304-word X 4-bit. They employ the m ost advanced 0.5 |Jm CMOS technology for high performance and low power.


    OCR Scan     		PDF HM5116400 HM5117400 304-word ADE-203-648D 300-mil 26-pin ns/70

    ALRS8

    Abstract: No abstract text available
    Text: m iir 1^ 2 , 5117400A/AL Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI The H itachi H M 5117400A /A L is a CMOS dynamic RAM organized 4,194,304 words x 4 bits. It employs the most advanced CMOS technology for high p erform ance and low pow er. The


    OCR Scan     		PDF HM5117400A/AL 304-word 117400A HM5117400AS/ALS-6 HM5117400AS/ALS-7 HM5117400AS/ALS-8 300-mil 24/26-pin CP-24DB) ALRS8

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 4M x 4-Bit Dynamic RAM 2k & 4k-Refresh Hyper Page Mode- EDO HYB 5116405BJ -50/-60/-70 HYB 5117405BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 ’C operating temperature • Performance: -50 -60 -70 ÍRAC


    OCR Scan     		PDF 5116405BJ 5117405BJ 5116405BJ-50) 5116405BJ-60) 5116405BJ-70) 5117405BJ-50) 5117405BJ-60) 5117405BJ-70) 405BJ-50/-60/-70 85max

    Untitled

    Abstract: No abstract text available
    Text: HB56D836 Series 8 ,3 8 8 ,6 0 8 -w o r d x 3 6 -b lt H ig h D e n s ity D y n a m ic R A M M o d u le The HB56D 836 is a 8 M x 36 dynam ic RAM module, mounted 16 pieces of 16-Mbit DRAM HM 5117400AS sealed in SOJ package and 8 pieces of 4-M bit DRAM (H M 514100B S/C S)


    OCR Scan     		PDF HB56D836 HB56D 16-Mbit 5117400AS) 514100B 72-pin HB56D836BR-6A

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 HYB 5117400BT -50/-60/-70 A d v a n c e d In fo rm a tio n • 4 194 30 4 w o rd s by 4 -b it o rg a n iz a tio n S in g le + 5 V ± 10 % sup ply • 0 to 70 C o p e ra tin g te m p e ra tu re Low p o w e r dissip a tio n


    OCR Scan     		PDF 5117400BJ 5117400BT

    MSM5117400

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC23436-xxBS12/DS12 4,194,304-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The O KI M SC 23436-xxBS12/D S12 is a fully decoded 4,194,304-word x 36-bit CM OS Dynamic Random Access M em ory M odule composed of eight 16-Mb DRAM s in SOJ M SM 5117400 packages and four 4-Mb


    OCR Scan     		PDF MSC23436-xxBS12/DS12 304-Word 36-Bit MSC23436-xxBS12/DS12 16-Mb MSM5117400) MSM514100B) 72-pin MSM5117400

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC23432-xxBS8/DS8 .rimUflMlMGy 4,194,304-Word by 32-Bit Dynamic RAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23432-xxB S8/D S8 is a fully decoded 4,194,304-w ord x 32-bit CM O S D ynam ic Random Access Mem ory M odule com posed of eight 16-Mb DRAMs in SOJ M SM 5117400 packages mounted with


    OCR Scan     		PDF MSC23432-xxBS8/DS8 304-Word 32-Bit 23432-xxB 304-w 16-Mb 72-pin

    thm3640*5

    Abstract: No abstract text available
    Text: TOSHIBA THM3640F5BS/BSG-60/70 PRELIMINARY 4,194,304 WORDS X 36 BIT EDO DYNAMIC RAM MODULE Description The TH M 3640F5BS/BSG is a 4,194,304 w ords by 36 bits Hyper Page M ode (EDO) dynamic RAM m odule which is assem ­ bled with 8 pcs of TC 5117405BSJ and 1 pc of TC 5117445BSJ on the printed circuit board. This m odule is optimized for


    OCR Scan     		PDF THM3640F5BS/BSG-60/70 3640F5BS/BSG 5117405BSJ 5117445BSJ 198mW THMxxxxxx-60) 489mW THM364QF5BS/BSG-60A70 DM16040595 THM3640F5BS/BSG thm3640*5

    marne

    Abstract: MSM5117400
    Text: O K I Semiconductor MSC23832-XXBS16/DS16 [PygOfl^DGUSlD^? 8,388,608-Word by 32-Bit DRAM Module: Fast Page Mode D ESC R IPTIO N The OKI M SC 23832-xxBS16/D S16 is a fully decoded 8,388,608-word x 32-bit CM OS dynamic Random Access Memory module composed of sixteen 16-Mb DRAM s in SOJ M SM 5117400 packages mounted


    OCR Scan     		PDF MSC23832-xxBS16/DS16 608-Word 32-Bit MSC23832-xxBS16/DS16 16-Mb MSM5117400) 72-pin marne MSM5117400