HB56A19B
Abstract: HB56A19B8A HB56A19B10A HB56A19B-7H 511000a HB56A19AT10A HB56A19B-8A HB56A19
Text: HB56A19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56A19 is a 1M x 9 dynamic RAM module, mounted nine 1-Mbit DRAM H M 511000JP sealed in SOJ package. An outline of the HB56A19 is 30-pin single in-line package having Lead types (HB56A19A, HB56A19AT), Socket type
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HB56A19
576-Word
511000JP)
30-pin
HB56A19A,
HB56A19AT)
HB56A19B)
HB56A19B
HB56A19B8A
HB56A19B10A
HB56A19B-7H
511000a
HB56A19AT10A
HB56A19B-8A
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HB56A18B-8A
Abstract: SIMM 30-pin HB56A18B HB56A18AT-6H "30 pin simm" 30-pin SIMM RAM 30 pin SIMM socket HB56A18B8A zp 1401 we221
Text: HB56A18 Series 1,048,576-Word x 8-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN DESCRIPTION The HB56A18 Is a 1M x 8 dynamic RAM module, mounted eight 1-Mbit DRAM HM 511000JP sealed in SOJ package. An outline of the H B56A18 is 30-pin single
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HB56A18
576-Word
HM511000JP)
30-pin
HB56A18A,
HB56A18AT)
HB56A18B)
HB56A18B-8A
SIMM 30-pin
HB56A18B
HB56A18AT-6H
"30 pin simm"
30-pin SIMM RAM
30 pin SIMM socket
HB56A18B8A
zp 1401
we221
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HB56A18B
Abstract: HB56A18B-8A 30 pin SIMM socket 511000a 30-pin simm socket
Text: MB56A18 S eries-1,048,576-Word x 8-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN DESCRIPTION The HB56A18 is a 1M x 8 dynamic RAM module, mounted eight 1-Mbit DRAM H M 511000JP sealed in SOJ package. An outline of the HB56A18 is 30-pin single
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MB56A18
576-Word
HB56A18
511000JP)
30-pin
HB56A18A,
HB56A18AT)
HB56A10B)
HB56A18B
HB56A18B-8A
30 pin SIMM socket
511000a
30-pin simm socket
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Untitled
Abstract: No abstract text available
Text: HITACHI/ LOGIC/ARRAYS/HEH S1E J> MM1bED3 DGlRlfib 577 IHIT2 HB56D136B/S Series-1,048,576-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56D136B/SB/BR/SBR/BS/SBS is a 1M x 36 dy namic RAM module, mounted 8 pieces of 4 Mbit DRAM
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HB56D136B/S
576-Word
36-Bit
HB56D136B/SB/BR/SBR/BS/SBS
HM514400JP/AJ)
HM511000JP)
HB56D136B/SB/BR/SBR)
HM511000ATS)
HB56D136SB/
HB56D136B/SB/BR/SBR/BS/SBS
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511000a
Abstract: No abstract text available
Text: HB56D236B/SB Series-2,097,152-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The H B 5 6 D 2 3 6 B /S B /B S /S B S is a 2M x 36 dynamic RAM module, mounted 16 pieces of 4 Mbit DRAM H M 514400JP /A J sealed in SOJ package and 8 pieces of
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HB56D236B/SB
152-Word
36-Bit
514400JP
511000JP)
11000A
72-pin
511000a
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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HM511000AJP8
Abstract: HM511000-12 HM511000P10S HM511000A HM511000AJP-10 HM511000 HM511000P-12 HM511000P HM511000S 11000AP
Text: H M S 1 1000S Series H M S 1 1000A Series 1048576-word x 1-bit C M O S Dynamic R A M The Hitachi HM511000S/A series is a CMOS dynamic RAM organized 1048576-word x 1-bit. HM511000S/A has realized higher density, higher performance and various functions by employing 1.3 ^tm CMOS process technology and some new
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1000S
1048576-word
HM511000S/A
18-pin
20-pin
HM511000AJP8
HM511000-12
HM511000P10S
HM511000A
HM511000AJP-10
HM511000
HM511000P-12
HM511000P
HM511000S
11000AP
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HM6788P-25
Abstract: 6788P s12045 28-pin SOJ SRAM
Text: • RELIABILITY OF HITACHI 1C MEMORIES 1. STRUCTURE IC memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic o f bipolar memo ries is high speed but small capacity, instead, MOS
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