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    50W 4 GHZ LINEAR POWER AMPLIFIER Search Results

    50W 4 GHZ LINEAR POWER AMPLIFIER Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    50W 4 GHZ LINEAR POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FMM5007VF

    Abstract: 50W linear power amplifier
    Text: FMM5007VF GaAs MMIC FEATURES • • • • • • High Output Power: 31.0dBm typ. High Linear Gain: 20dB (typ.) Low In/Out VSWR Integrated Output Power Monitor Impedance Matched Zin/Zout = 50W Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5007VF is a MMIC amplifier designed for VSAT applications


    Original     		PDF FMM5007VF FMM5007VF FCSI0598M200 50W linear power amplifier

    FMM5010

    Abstract: FMM5010VF
    Text: FMM5010VF GaAs MMIC FEATURES • • • • • High Output Power: 21.0dBm typ. High Linear Gain: 25dB (typ.) Low In/Out VSWR Impedance Matched Zin/Zout = 50W Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5010VF is a power amplifier designed for VSAT applications


    Original     		PDF FMM5010VF FMM5010VF FCSI0598M200 FMM5010

    Untitled

    Abstract: No abstract text available
    Text: FMM5017VF GaAs MMIC FEATURES • • • • • • High Output Power: 29dBm typ. High Linear Gain: 20dB (typ.) Low In/Out VSWR Integrated Output Power Monitor Impedance Matched Zin/Zout = 50W Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5017VF is a MMIC amplifier designed for VSAT applications


    Original     		PDF FMM5017VF 29dBm FMM5017VF FCSI0598M200

    50w transistor

    Abstract: BFR193T BFR193TW
    Text: BFR193T/BFR193TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers.


    Original     		PDF BFR193T/BFR193TW BFR193T BFR193TW D-74025 14-Feb-00 50w transistor

    BFR193T

    Abstract: BFR193TW
    Text: BFR193T/BFR193TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers.


    Original     		PDF BFR193T/BFR193TW BFR193T BFR193TW D-74025 14-Feb-00

    Untitled

    Abstract: No abstract text available
    Text: BFR193T/BFR193TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers.


    Original     		PDF BFR193T/BFR193TW BFR193T BFR193TW D-74025 21-Sep-99

    brf92

    Abstract: BRF92A BFR92A sot-23 transistor p2 marking 211 ft 0473
    Text: BFR92A NPN WIDEBAND TRANSISTOR Features • · · · · RF Wideband Amplifier/Oscillator 5GHz Transition Frequency Low Intermodulation Distortion High Power Gain Low Noise SOT-23 A C TOP VIEW · · · · · Case: SOT-23, Molded Plastic Leads/Terminals: Solderable per MIL-STD-202,


    Original     		PDF BFR92A OT-23 OT-23, MIL-STD-202, 800MHz DS30031 500MHz brf92 BRF92A BFR92A sot-23 transistor p2 marking 211 ft 0473

    BRF92

    Abstract: BRF92A
    Text: BFR92A NPN WIDEBAND TRANSISTOR Features • · · · · RF Wideband Amplifier/Oscillator 5GHz Transition Frequency Low Intermodulation Distortion High Power Gain Low Noise SOT-23 A C TOP VIEW Mechanical Data · · · · · C E B Case: SOT-23, Molded Plastic


    Original     		PDF BFR92A OT-23 OT-23, MIL-STD-202, 500MHz DS30031 BRF92 BRF92A

    Untitled

    Abstract: No abstract text available
    Text: Skyworks New and Featured Products David Seed Shuping Zhang MTTS 2014 Skyworks Solutions, Inc. Proprietary and Confidential Information Information 1 Skyworks At A Glance Skyworks Solutions is a Vertically Integrated provided of High Performance Analog and Mixed Signal Semiconductors Enabling Mobile Connectivity


    Original     		PDF SKY85706-11 11n/ac SKY73420-11

    FAGD1651132BA

    Abstract: GD16511 GD16511-32BA STM-16
    Text: 2.5 Gbit/s Limiting Amplifier GD16511 an Intel company Preliminary General Information GD16511 is a wide bandwidth, limiting amplifier designed for: u SDH STM-16 u SONET OC-48 optical communication systems. It features a linear gain of at least 28 dB and a 3 dB bandwidth larger than 3 GHz,


    Original     		PDF GD16511 GD16511 STM-16 OC-48 FAGD1651132BA GD16511-32BA STM-16

    P1dB50

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC47A4450 4.4 – 5.0 GHz BAND / 50W DESCRIPTION OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 2 MIN. The MGFC47A4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0


    Original     		PDF MGFC47A4450 MGFC47A4450 P1dB50

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC47A4450 4.4 – 5.0 GHz BAND / 50W DESCRIPTION OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 2 MIN. The MGFC47A4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0


    Original     		PDF MGFC47A4450 MGFC47A4450

    MGFC47V5864

    Abstract: 5.8 ghz transmitter
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC47V5864 5.8~6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit : millimeters 24+/-0.3 2MIN. The MGFC47V5864 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ∼ 6.4GHz


    Original     		PDF MGFC47V5864 MGFC47V5864 47dBm June/2004 5.8 ghz transmitter

    50W 4 GHz linear power amplifier

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC47V5864 5.8 – 6.4 GHz BAND / 50W DESCRIPTION OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 2 MIN. The MGFC47V5864 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.4


    Original     		PDF MGFC47V5864 MGFC47V5864 50W 4 GHz linear power amplifier

    CC45T47K240G5C2

    Abstract: Sumitomo 1295SA SA1515BX101M2HX5 SK04B102M11A6 GRP155F51A474ZDO2B PCB Rogers RO4003 substrate AVX0402YG104ZAT2A HIGH GAIN FET 1295SA Presidio Components CAP
    Text: AMMC-5024 30KHz–40 GHz TWA Operational Guide Application Note 5359 Introduction Device Description This application note is an operational guide for Avago’s AMMC-5024 Traveling Wave Amplifier. The AMMC-5024 is a broadband PHEMT GaAs MMIC designed for medium output power 22.5dBm P1dB


    Original     		PDF AMMC-5024 30KHz AMMC-5024 40GHz AV02-0704EN CC45T47K240G5C2 Sumitomo 1295SA SA1515BX101M2HX5 SK04B102M11A6 GRP155F51A474ZDO2B PCB Rogers RO4003 substrate AVX0402YG104ZAT2A HIGH GAIN FET 1295SA Presidio Components CAP

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information December 18, 2002 27 - 32 GHz 1W Power Amplifier TGA4509-EPU Key Features • • • • • • • Chip Dimensions 2.4 mm x 1.2 mm x 0.1 mm 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss


    Original     		PDF TGA4509-EPU 0007-inch

    10KW

    Abstract: TGA4509 TGA4509-EPU 50W 4 GHz linear power amplifier
    Text: Advance Product Information January 23, 2003 27 - 32 GHz 1W Power Amplifier TGA4509-EPU Key Features • • • • • • • Chip Dimensions 2.4 mm x 1.2 mm x 0.1 mm 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss


    Original     		PDF TGA4509-EPU 0007-inch 10KW TGA4509 TGA4509-EPU 50W 4 GHz linear power amplifier

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original     		PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1

    RAYTHEON

    Abstract: 50W 4 GHz linear power amplifier
    Text: # 425430398 Description Features Absolute Ratings Electrical Characteristics1 RMPA2451-58 2.4-2.5 GHz GaAs MMIC Power Amplifier PRODUCT INFORMATION Raytheon RF Components’ RMPA2451-58 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The


    Original     		PDF RMPA2451-58 RMPA2451-58 RAYTHEON 50W 4 GHz linear power amplifier

    Untitled

    Abstract: No abstract text available
    Text: < Ku band internally matched power GaN HEMT > MGFK47G3745 13.75 – 14.5 GHz BAND / 50W DESCRIPTION OUTLINE DRAWING The MGFK47G3745, GaN HEMT with an N-channel schottky gate, is designed for Ku-band applications. Unit : millimeters 21.0 +/-0.3 FEATURES 1


    Original     		PDF MGFK47G3745 MGFK47G3745, 42dBm CSTG-14952

    CGHV96100F1

    Abstract: taconic
    Text: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1 taconic

    Untitled

    Abstract: No abstract text available
    Text: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1

    MGFC47A4450

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC47A4450 4.4~5.0GHz BAND 50W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING The MGFC47A4450 device is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0GHz band amplifiers. The hermetically sealed metal-ceramic package


    OCR Scan     		PDF MGFC47A4450 MGFC47A4450 47dBm RG-10

    MGFC47V5864

    Abstract: mitsubishi optical transmitter
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> R/IGFC47V5864 5.8~6.4G H z BAND 50W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING The MGFC47V5864 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.4GHz band amplifiers. The hermetically sealed metal-ceramic package


    OCR Scan     		PDF MGFC47V5864 MGFC47V5864 47dBm mitsubishi optical transmitter