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    Toshiba America Electronic Components GT50N322A

    IGBT 1000V 50A TO3P
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    DigiKey GT50N322A Tray 62 1
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    Avnet Americas GT50N322A Tube 24 Weeks 50
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    Mouser Electronics GT50N322A 78
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    50N322A Datasheets Context Search

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    50N322

    Abstract: GT50N322 50N322A GT50N322A TOSHIBA IGBT DATA BOOK gt50n
    Text: 50N322A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 50N322A Voltage Resonance Inverter Switching Application Fifth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.10 s typ. (IC = 60 A)


    Original     		PDF GT50N322A 50N322 GT50N322 50N322A GT50N322A TOSHIBA IGBT DATA BOOK gt50n

    50N322

    Abstract: 50N322A GT50N322A GT50N322 ic501
    Text: 50N322A 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT 50N322A ○ 電圧共振インバータスイッチング用 ○ 第 5 世代 単位: mm • FRD を内蔵しています。 • 取り扱いが簡単なエンハンスメントタイプです。


    Original     		PDF GT50N322A 2-16C1C 50N322A 20070701-JA 50N322 50N322A GT50N322A GT50N322 ic501

    50N322

    Abstract: 50N322A
    Text: 50N322A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 50N322A Voltage Resonance Inverter Switching Application Fifth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.10 s typ. (IC = 60 A)


    Original     		PDF GT50N322A 50N322 50N322A