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    50N10 Search Results

    50N10 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RBA250N10CHPF-4UA02#GB0 Renesas Electronics Corporation 100V - 250A - N-channel Power MOS FET, MP-25ZU, /Embossed Tape Visit Renesas Electronics Corporation
    SF Impression Pixel

    50N10 Price and Stock

    Frontier Electronics Co Ltd 0201G250N100DCT

    CAP CER 10PF 25V C0G/NP0 0201
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 0201G250N100DCT Reel 30,000 1
    • 1 $0.05
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    Frontier Electronics Co Ltd 0402G250N100GCT

    CAP CER 10PF 25V C0G/NP0 0402
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    DigiKey 0402G250N100GCT Reel 20,000 1
    • 1 $0.01
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    Vishay Siliconix SQD50N10-8M9L_GE3

    MOSFET N-CH 100V 50A TO252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SQD50N10-8M9L_GE3 Reel 6,000 2,000
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    SQD50N10-8M9L_GE3 Cut Tape 1,743 1
    • 1 $1.69
    • 10 $1.401
    • 100 $1.1153
    • 1000 $0.80075
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    New Advantage Corporation SQD50N10-8M9L_GE3 12,000 1
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    • 10000 $0.9583
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    onsemi FDD850N10L

    MOSFET N-CH 100V 15.7A DPAK
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    DigiKey FDD850N10L Reel 5,000 2,500
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    FDD850N10L Cut Tape 3,764 1
    • 1 $1.67
    • 10 $1.059
    • 100 $0.7095
    • 1000 $0.5111
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    Avnet Americas FDD850N10L Reel 0 Weeks, 2 Days 1,471
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    Newark FDD850N10L Reel 2,500
    • 1 $0.582
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    • 10000 $0.507
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    Bristol Electronics FDD850N10L 4,650
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    Richardson RFPD FDD850N10L 2,500
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    Avnet Silica FDD850N10L 24 Weeks 2,500
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    Chip1Stop FDD850N10L 12,500
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    EBV Elektronik FDD850N10L 25 Weeks 2,500
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    Flip Electronics FDD850N10L 2,355
    • 1 $0.34
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    Infineon Technologies AG BSZ150N10LS3GATMA1

    MOSFET N-CH 100V 40A 8TSDSON
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    DigiKey BSZ150N10LS3GATMA1 Reel 5,000 5,000
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    BSZ150N10LS3GATMA1 Cut Tape 2,031 1
    • 1 $2.25
    • 10 $1.445
    • 100 $0.9838
    • 1000 $0.72249
    • 10000 $0.6689
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    Avnet Americas BSZ150N10LS3GATMA1 Reel 10,000 18 Weeks 5,000
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    Mouser Electronics BSZ150N10LS3GATMA1 34,245
    • 1 $1.51
    • 10 $1.17
    • 100 $0.912
    • 1000 $0.669
    • 10000 $0.638
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    Newark BSZ150N10LS3GATMA1 Cut Tape 2,105 1
    • 1 $0.197
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    ComSIT USA BSZ150N10LS3GATMA1 350
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    Chip1Stop BSZ150N10LS3GATMA1 4,428
    • 1 $1.0875
    • 10 $0.9551
    • 100 $0.7468
    • 1000 $0.592
    • 10000 $0.5467
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    BSZ150N10LS3GATMA1 Cut Tape 607
    • 1 $0.87
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    • 100 $0.603
    • 1000 $0.59
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    EBV Elektronik BSZ150N10LS3GATMA1 19 Weeks 5,000
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    Find more 50N10 price and stock on Findchips.com

    50N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    50N100

    Abstract: 50N120 IXRH 50N120 bi-directional switches IGBT induction heat resonant D-68623
    Text: Advanced Technical Information IXRH 50N120 VCES = 1000 / 1200 V IXRH 50N100 IC25 = 60 A IGBT with Reverse Blocking capability VCE sat = 2.5 V tf = 75 ns C TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Symbol


    Original     		PDF 50N120 50N100 O-247 50N120 50N100 IXRH 50N120 bi-directional switches IGBT induction heat resonant D-68623

    toy helicopter remote control circuit diagram

    Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter
    Text: Infineon Solutions for Transportation 24 V, Leisure Vehicles and Small Electrical Carts [ www.infineon.com ] 2 Contents Introduction 04 Application Segments 06 Trucks 08 Leisure Vehicles 10 Electrical Vehicles 12 Products Microcontrollers 14 Automotive Power


    Original     		PDF B192-H9213-X-X-7600 toy helicopter remote control circuit diagram TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter

    Untitled

    Abstract: No abstract text available
    Text: 50N105DK5 N-channel 1050 V, 0.1 Ω typ., 44 A Zener-protected SuperMESH 5 Power MOSFET in a Max247 package Datasheet — preliminary data Features Order code VDS 50N105DK5 1050 V RDS on max ID PTOT 0.120 Ω 44 A 625 W • Worldwide best RDS(on)*area


    Original     		PDF STY50N105DK5 Max247 STY50N105DK5 Max247

    SSD50N10

    Abstract: MosFET
    Text: 50N10 50A , 100V , RDS ON 22mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The 50N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide


    Original     		PDF SSD50N10 O-252 SSD50N10 50N10 19-Oct-2012 MosFET

    SSU50N10

    Abstract: MosFET
    Text: 50N10 54A , 100V , RDS ON 22mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-263 The 50N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide


    Original     		PDF SSU50N10 O-263 SSU50N10 50N10 9-Dec-2011 MosFET

    rr0805

    Abstract: RGR07 RNC60H Resistor 22 ohms rb60 resistor MIL-R-39007 rr1206 MIL-R-26 RW79 MIL-R-26 MIL-R-39005 RR2512
    Text: Product Approvals - CECC Type Specification Style MFR3 MFR3 MFR4 MFR4 MFR5 MFR5 BS CECC 40101-019 GX GZ FX FZ EX EZ 1R0 1R 01R0 1R0 9R1 9R1 - MFR4 MFR4 MFR5 MFR5 BS CECC 40101-803 BK BC CK CC 10R 10R 9R1 9R1 FA025 FA05 FA1 FA94 BS CECC 40101-019 FX EX DX CX


    OCR Scan     		PDF FA025 50n-100K 2-121Kfl 100i2-100Kn 2-100K 2-100KC2 2-100KQ MIL-R-55342 M55342/6 rr0805 RGR07 RNC60H Resistor 22 ohms rb60 resistor MIL-R-39007 rr1206 MIL-R-26 RW79 MIL-R-26 MIL-R-39005 RR2512

    30n60

    Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
    Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100


    OCR Scan     		PDF 00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1

    Untitled

    Abstract: No abstract text available
    Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62


    OCR Scan     		PDF 20N60 30N60 40N60 25N100 45N100 45N120 40N60AU1 35N100U1 55N100U1Â 52N60AU1Â

    50N60

    Abstract: 50N100 50n80 40N160 9N160G 50N6
    Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C


    OCR Scan     		PDF 9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6

    mm036

    Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
    Text: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA


    OCR Scan     		PDF DSAI35-12A 5-16A 5-18A 5-12A 2-06A 12-1OA 2-12A 2x30-Q4C mm036 ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100