Datasheet Archive: 50N10 datasheets

50N10 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RBA250N10CHPF-4UA02#GB0		Renesas Electronics Corporation	100V - 250A - N-channel Power MOS FET, MP-25ZU, /Embossed Tape

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Taiwan Semiconductor TSM950N10CW-RPG MOSFET N-CH 100V 6.5A SOT223
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TSM950N10CW-RPG	Cut Tape	10,024		1	1 $1 10 $0.625 100 $1 1000 $0.28423 10000 $0.28423	Buy Now
	TSM950N10CW-RPG	Digi-Reel	10,024		1	1 $1 10 $0.625 100 $1 1000 $0.28423 10000 $0.28423	Buy Now
	TSM950N10CW-RPG	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.23014	Buy Now
Infineon Technologies AG IPD050N10N5ATMA1 MOSFET N-CH 100V 80A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD050N10N5ATMA1	Reel	5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.90238	Buy Now
Avnet Americas	IPD050N10N5ATMA1	Reel	32,500	20 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.85686	Buy Now
	IPD050N10N5ATMA1	Ammo Pack			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	IPD050N10N5ATMA1	Cut Tape	986		1	1 $2.92 10 $1.93 100 $1.49 1000 $1.21 10000 $1.21	Buy Now
Rochester Electronics	IPD050N10N5ATMA1		642		1	1 $1 10 $1 100 $0.94 1000 $0.85 10000 $0.85	Buy Now
Chip One Stop	IPD050N10N5ATMA1	Cut Tape	3,752			1 $2.42 10 $1.75 100 $1.3 1000 $1.12 10000 $1	Buy Now

EBV Elektronik	IPD050N10N5ATMA1			21 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
PanJit Group PJD50N10AL_L2_00001 100V N-CHANNEL ENHANCEMENT MODE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PJD50N10AL_L2_00001	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.34356	Buy Now
	PJD50N10AL_L2_00001	Cut Tape	2,936		1	1 $1.33 10 $0.839 100 $1.33 1000 $0.39343 10000 $0.39343	Buy Now
PanJit Group PJD50N10SA-AU_L2_006A1 100V N-CHANNEL ENHANCEMENT MODE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PJD50N10SA-AU_L2_006A1	Cut Tape	2,920		1	1 $1.88 10 $1.197 100 $1.88 1000 $0.58428 10000 $0.58428	Buy Now
	PJD50N10SA-AU_L2_006A1	Digi-Reel	2,920		1	1 $1.88 10 $1.197 100 $1.88 1000 $0.58428 10000 $0.58428	Buy Now
PanJit Group PJD50N10AL-AU_L2_000A1 100V N-CHANNEL ENHANCEMENT MODE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PJD50N10AL-AU_L2_000A1	Cut Tape	1,295		1	1 $1.53 10 $0.97 100 $1.53 1000 $0.46243 10000 $0.46243	Buy Now

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Catalog Datasheet	MFG & Type	Document Tags	PDF
50N100 Abstract: 50N120 IXRH 50N120 bi-directional switches IGBT induction heat resonant D-68623 Text: Advanced Technical Information IXRH 50N120 VCES = 1000 / 1200 V IXRH 50N100 IC25 = 60 A IGBT with Reverse Blocking capability VCE sat = 2.5 V tf = 75 ns C TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Symbol	Original	50N120 50N100 O-247 50N120 50N100 IXRH 50N120 bi-directional switches IGBT induction heat resonant D-68623	PDF
toy helicopter remote control circuit diagram Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter Text: Infineon Solutions for Transportation 24 V, Leisure Vehicles and Small Electrical Carts [ www.infineon.com ] 2 Contents Introduction 04 Application Segments 06 Trucks 08 Leisure Vehicles 10 Electrical Vehicles 12 Products Microcontrollers 14 Automotive Power	Original	B192-H9213-X-X-7600 toy helicopter remote control circuit diagram TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter	PDF
Untitled Abstract: No abstract text available Text: 50N105DK5 N-channel 1050 V, 0.1 Ω typ., 44 A Zener-protected SuperMESH 5 Power MOSFET in a Max247 package Datasheet — preliminary data Features Order code VDS 50N105DK5 1050 V RDS on max ID PTOT 0.120 Ω 44 A 625 W • Worldwide best RDS(on)*area	Original	STY50N105DK5 Max247 STY50N105DK5 Max247	PDF
SSD50N10 Abstract: MosFET Text: 50N10 50A , 100V , RDS ON 22mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The 50N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide	Original	SSD50N10 O-252 SSD50N10 50N10 19-Oct-2012 MosFET	PDF
SSU50N10 Abstract: MosFET Text: 50N10 54A , 100V , RDS ON 22mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-263 The 50N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide	Original	SSU50N10 O-263 SSU50N10 50N10 9-Dec-2011 MosFET	PDF
rr0805 Abstract: RGR07 RNC60H Resistor 22 ohms rb60 resistor MIL-R-39007 rr1206 MIL-R-26 RW79 MIL-R-26 MIL-R-39005 RR2512 Text: Product Approvals - CECC Type Specification Style MFR3 MFR3 MFR4 MFR4 MFR5 MFR5 BS CECC 40101-019 GX GZ FX FZ EX EZ 1R0 1R 01R0 1R0 9R1 9R1 - MFR4 MFR4 MFR5 MFR5 BS CECC 40101-803 BK BC CK CC 10R 10R 9R1 9R1 FA025 FA05 FA1 FA94 BS CECC 40101-019 FX EX DX CX	OCR Scan	FA025 50n-100K 2-121Kfl 100i2-100Kn 2-100K 2-100KC2 2-100KQ MIL-R-55342 M55342/6 rr0805 RGR07 RNC60H Resistor 22 ohms rb60 resistor MIL-R-39007 rr1206 MIL-R-26 RW79 MIL-R-26 MIL-R-39005 RR2512	PDF
30n60 Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1 Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100	OCR Scan	00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1	PDF
Untitled Abstract: No abstract text available Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62	OCR Scan	20N60 30N60 40N60 25N100 45N100 45N120 40N60AU1 35N100U1 55N100U1Â 52N60AU1Â	PDF
50N60 Abstract: 50N100 50n80 40N160 9N160G 50N6 Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C	OCR Scan	9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6	PDF
mm036 Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100 Text: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA	OCR Scan	DSAI35-12A 5-16A 5-18A 5-12A 2-06A 12-1OA 2-12A 2x30-Q4C mm036 ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100	PDF

50N10 Search Results

50N10 Result Highlights (1)

50N10 Price and Stock

Taiwan Semiconductor TSM950N10CW-RPG

Infineon Technologies AG IPD050N10N5ATMA1

PanJit Group PJD50N10AL_L2_00001

PanJit Group PJD50N10SA-AU_L2_006A1

PanJit Group PJD50N10AL-AU_L2_000A1

50N10 Datasheets Context Search

50N100

toy helicopter remote control circuit diagram

Untitled

SSD50N10

SSU50N10

rr0805

30n60

Untitled

50N60

mm036