Untitled
Abstract: No abstract text available
Text: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Data Sheet January 21, 2002 FEATURES q 25ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows operation as 8, 16, 24, or 32-bit data width
|
Original
|
PDF
|
UT8Q512K32
16Megabit
32-bit
50krads
1E-10
68-lead
512K32
10krad
|
Untitled
Abstract: No abstract text available
Text: Standard Products QCOTSTM UT8Q512 512K x 8 SRAM Data Sheet August, 2002 FEATURES q 25ns 3.3 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state
|
Original
|
PDF
|
UT8Q512
50krads
100krads
36-lead
10krad)
30krad)
50krad
|
Untitled
Abstract: No abstract text available
Text: NOTE: This product has been replaced with UT9Q512E. Please use the UT9Q512E for NEW designs. See the April 2007 customer letter at www.aeroflex.com/QCOTS for the improvements and differences. 1 Standard Products QCOTSTM UT9Q512 512K x 8 SRAM Data Sheet August 19, 2004
|
Original
|
PDF
|
UT9Q512E.
UT9Q512E
UT9Q512
50krads
100krads
|
Untitled
Abstract: No abstract text available
Text: Standard Products QCOTSTM UT9Q512K32 16Megabit SRAM MCM Advanced Data Sheet August 6, 2001 FEATURES q 35ns maximum 5 volt supply address access time q Asynchronous operation for compatible with industry standard 512K x 8 SRAMs q TTL compatible inputs and output levels , three-state
|
Original
|
PDF
|
UT9Q512K32
16Megabit
50krads
1E-10
0E14n/cm2
68-lead
10krad
30krad
50krad
|
Untitled
Abstract: No abstract text available
Text: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Preliminary Data Sheet June 20, 2001 FEATURES q 35ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows
|
Original
|
PDF
|
UT8Q512K32
16Megabit
32-bit
50krads
300krads
8E-11errors/bit-day,
0E14n/cm2
68-lead
10krad
50krad
|
Untitled
Abstract: No abstract text available
Text: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Advanced Data Sheet December 17, 2001 FEATURES q 25ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows
|
Original
|
PDF
|
UT8Q512K32
16Megabit
32-bit
50krads
1E-10
68-lead
512K32
10krad
|
UT9Q512K32
Abstract: No abstract text available
Text: Standard Products UT9Q512K32E 16 Megabit RadTolerant SRAM MCM Data Sheet June 28, 2011 INTRODUCTION The UT9Q512K32E RadTol product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs with a
|
Original
|
PDF
|
UT9Q512K32E
68-lead
UT9Q512K32
|
Untitled
Abstract: No abstract text available
Text: Standard Products QCOTSTM UT9Q512K32 16Megabit SRAM MCM Data Sheet January 21, 2002 FEATURES q 25ns maximum 5 volt supply address access time q Asynchronous operation for compatible with industry standard 512K x 8 SRAMs q TTL compatible inputs and output levels , three-state
|
Original
|
PDF
|
UT9Q512K32
16Megabit
50krads
1E-10
68-lead
512K32
-40oC
|
Untitled
Abstract: No abstract text available
Text: Standard Products QCOTSTM UT9Q512 512K x 8 SRAM Data Sheet August, 2002 FEATURES q 25ns maximum 5 volt supply address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state
|
Original
|
PDF
|
UT9Q512
50krads
100krads
36-lead
50krad
|
Untitled
Abstract: No abstract text available
Text: Standard Products QCOTSTM UT8Q1024K8 SRAM Data Sheet June, 2002 FEATURES q 25ns maximum 3.3 volt supply address access time q Dual cavity package contains two (2) 512K x 8 industrystandard asynchronous SRAMs; the control architecture allows operation as an 8-bit data width
|
Original
|
PDF
|
UT8Q1024K8
50krad
44-lead
-40oC
10krad
30krad
|
UT9Q512K32E
Abstract: No abstract text available
Text: NOTE: This product has been replaced with UT9Q512K32E. Please use the UT9Q512K32E for NEW designs. See the April 2007 customer letter at www.aeroflex.com/QCOTS for the improvements and differences. Standard Products QCOTSTM UT9Q512K32 16Megabit SRAM MCM Data Sheet
|
Original
|
PDF
|
UT9Q512K32E.
UT9Q512K32E
UT9Q512K32
16Megabit
50krads
68-leC
512K32
68-lead
-40oC
|
Untitled
Abstract: No abstract text available
Text: Standard Products UT9Q512K32E 16 Megabit RadTolerant SRAM MCM Preliminary Data Sheet February 29, 2008 INTRODUCTION The UT9Q512K32E RadTolerant product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs
|
Original
|
PDF
|
UT9Q512K32E
50krads
68-lead
|
Untitled
Abstract: No abstract text available
Text: Standard Products QCOTSTM UT8Q1024K8 SRAM Preliminary Data Sheet August 27, 2001 INTRODUCTION The QCOTS TM UT8Q1024K8 Quantified Commercial Off-theShelf product is a high-performance 1M byte 8Mbit CMOS static RAM built with two individual 524,288 x 8 bit SRAMs
|
Original
|
PDF
|
UT8Q1024K8
1E-10
0E14n/cm
44-lead
10krad
30krad
50krad
|
UT9Q512E
Abstract: 50krads A15G 9q512
Text: Standard Products QCOTSTM UT9Q512E 512K x 8 SRAM Data Sheet May 2, 2007 INTRODUCTION FEATURES 20ns maximum 5 volt supply address access time Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs TTL compatible inputs and output levels, three-state
|
Original
|
PDF
|
UT9Q512E
50krads
36-lead
A15G
9q512
|
|
|
Untitled
Abstract: No abstract text available
Text: Standard Products UT9Q512K32E 16 Megabit RadTolerant SRAM MCM Preliminary Data Sheet February 29, 2008 INTRODUCTION The UT9Q512K32E RadTolerant product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs
|
Original
|
PDF
|
UT9Q512K32E
50krads
68-lead
|
RH1084
Abstract: transistor BC 247
Text: RH1084 5A Low Dropout Positive Adjustable Regulator U W W W U DESCRIPTIO ABSOLUTE The RH1084 positive adjustable regulator is designed to provide 5A with higher efficiency than currently available devices. All internal circuitry is designed to operate down
|
Original
|
PDF
|
RH1084
RH1084
transistor BC 247
|
Untitled
Abstract: No abstract text available
Text: Radiation Hardened Programmable Low Power Op Amps HS-3530ARH, HS-3530AEH Features The HS-3530ARH, HS-3530AEH are Low Power Operational Amplifiers, which are internally compensated monolithic devices offering a wide range of performance specifications. Parameters such as power dissipation, slew rate, bandwidth,
|
Original
|
PDF
|
HS-3530ARH,
HS-3530AEH
HS-3530AEH
FN4653
|
RH1021-10
Abstract: RH1021BM-10 RH1021CM-10
Text: RH1021-10 Precision 10V Reference U W W W U DESCRIPTION ABSOLUTE MAXIMUM RATINGS The RH1021-10 is a precision 10V reference with ultralow drift and noise, extremely good long-term stability and almost total immunity to input voltage variations. The reference output will source and sink up to 10mA. This
|
Original
|
PDF
|
RH1021-10
RH1021-10
RH1021BM-10
RH1021CM-10
|
RH1009
Abstract: RH129 RH129A RH129B RH129C 701 LTC
Text: RH129 6.9V Precision Reference U W W W U DESCRIPTIO ABSOLUTE The RH129 precision reference features excellent stability over a wide range of voltage, temperature and operating current conditions. The device achieves low dynamic impedance by incorporating a high gain shunt regulator
|
Original
|
PDF
|
RH129
RH129
TPC02
TPC03
TPC04
434-0507q
RH1009
RH129A
RH129B
RH129C
701 LTC
|
RH111
Abstract: No abstract text available
Text: RH111 Voltage Comparator U W W W U DESCRIPTIO ABSOLUTE The RH111 is a general purpose voltage comparator. The RH111 offers maximum input offset voltage of 3mV and input offset current of 10nA with a typical response time of 200ns. The RH111 can operate from a single 5V supply
|
Original
|
PDF
|
RH111
RH111
200ns.
|
memoire
Abstract: RAM EDAC SEU 350Krad
Text: 0.6µm CMOS TECHNOLOGY WITH RADIATION TOLERANT FEATURES APPLICATION TO 8Kx16 DUAL PORT RAM and SEA of GATES TECHNOLOGIE CMOS 0.6µm TOLERANTE AUX RADIATIONS APPLICATION A LA MEMOIRE DOUBLE ACCES 8Kx16 ET AUX MERS DE PORTES by Thierry CORBIERE, Valerie LASSERE, Bruno THOMAS, Saïd HACHAD 1
|
Original
|
PDF
|
8Kx16
memoire
RAM EDAC SEU
350Krad
|
krad
Abstract: 67025E TM1019 RAM SEU
Text: DPR SCMOS2 Technology Dual Port RAM 8K16 Tolerance to Radiation Abstract This paper proposes a review of the data gathered during radiation testing for the 8Kx16 dual port RAM manufactured using the Radiation Tolerant version of the 0.6µm SCMOS2/2 technology. Both Upset sensitivity
|
Original
|
PDF
|
8Kx16
50Krad
10Krad
35Krad
NT94055,
9849/92/NL,
krad
67025E
TM1019
RAM SEU
|
Untitled
Abstract: No abstract text available
Text: L M P 2 0 12 Q M L LMP2012QML Dual High Precision, Rail-to-Rail Output Operational Amplifier Texa s In s t r u m e n t s Literature Number: SNOSAU5G LMP2012QML Q w Sem iconductor Dual High Precision, Rail-to-Rail Output Operational Am plifier General Description
|
OCR Scan
|
PDF
|
LMP2012QML
LMP2012QML
LMP2012
|
Untitled
Abstract: No abstract text available
Text: Lin fiA R . TECHNOLOGY _ RH1078M Micropower, Dual, Single Supply Precision Op Amp DCSCRIPTIOn r b s o iu t c The RH1078M is a micropower dual op amp in the standard 8-pin configuration. This device is optimized for single supply operation at 5V. Specifications for ± 1 5V are
|
OCR Scan
|
PDF
|
RH1078M
RH1078M
1078M
|