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    MP5010

    Abstract: MP5010HN MP5010GN MP5010JT MP5010LT ICL8069
    Text: M MICRO POWER SYSTEMS Very Low Tempco 1.2 Voltage Reference MP5010 FEATURES • Lowest Tempco in the Industry: 5 ppm/°C Max. • Superior Replacement for Other 1.2V References • Wide Operating Range: 50juA — 10 mA • Low Output Impedance: 0.6ft Typical


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    PDF MP5010 50juA LM113, ICL8069, AD589 MIL-STD-883, --658C 100//A 500//A MP5010 MP5010HN MP5010GN MP5010JT MP5010LT ICL8069

    DL6307

    Abstract: DL6310 DL6305 DL6306
    Text: DATATRONICS 2bE D • 2b514fl2 000021b fi ■ ‘T - 4 0 - 1 3 SER IES DL6300 DIGITAL DELAY M O D U LES .• 14 Pin Package • T T Lan d D T L Compatible • 5 Equally Spaced Taps Specifications • • • • • • • • • • 4.75 to 5.25VDC 50juA Max


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    PDF 2b514fl2 000021b DL6300 25VDC 50juA 20/Tap 10/Tap 240mW 100PPM/Â DL6305B) DL6307 DL6310 DL6305 DL6306

    Untitled

    Abstract: No abstract text available
    Text: 128 Bit X24001 16 x 8 Bit ldenti PROM FEATURES DESCRIPTION • 2.7V to 5.5V Power Supply • 128 Bit Serial E^PROM • Low Power CMOS — Active Current Less Than 1mA — Standby Current Less Than 50juA • Internally Organized 1 6 x 8 • 2 Wire Serial Interface


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    PDF X24001 50juA X24001

    Diode LT 4104

    Abstract: No abstract text available
    Text: liim LT1529 LT 1529-3.3/LT 1529-5 TECHNOLOGY 3A Low D ropout Regulators with M icro p o w e r Q u ie sce n t Current a n d Shutdow n K A T U IK S DCSCRIPTIOn • Dropout Voltage: 0.6V at I out = 3A ■ Output Current: 3A ■ Quiescent Current: 50juA ■ No Protection Diodes Needed


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    PDF LT1529 50juA 1529/LT1529-3 3/LT1529-5 LT1120A 125mA 425mA LT1303 LT1376 500kHz Diode LT 4104

    DL6306

    Abstract: DL6305 DL6307 DL6525 DL6309 DL6526 DL6310 DL6305B DL6513 DL6523
    Text: 9 DAT ATRONICS D • 2 t S14Û5 0 0 D O 5 lb Ô SERIES DL6300 DIGITAL DELAY MODULES 14 Pin Package • T T L and D T L Compatible • 5 Equally Spaced Taps Specifications 4.75 to 5 .25V D C 50juA Max — 2 m A Max 2.5v Min 0.5v Max ' 20/Tap Max 10/Tap Max


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    PDF 2fa514A2 DL6300 25VDC 50juA 20/Tap 10/Tap 240mW 100PPM/Â DelayL6523 DL6306 DL6305 DL6307 DL6525 DL6309 DL6526 DL6310 DL6305B DL6513 DL6523

    DL6307

    Abstract: DL6305 DL6306 DL6526 DL6309 DL6310 DL6525 DL6305B DL6513 DL6523
    Text: 9 DAT ATRONICS D • 2 t S14Û5 0 0 D O 5 lb Ô SERIES DL6300 DIGITAL DELAY MODULES 14 Pin Package • T T L and D T L Compatible • 5 Equally Spaced Taps Specifications 4.75 to 5 .25V D C 50juA Max — 2 m A Max 2.5v Min 0.5v Max ' 20/Tap Max 10/Tap Max


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    PDF 2fa514A2 DL6300 25VDC 50juA 20/Tap 10/Tap 240mW 100PPM/Â DL6523 DL6306 DL6307 DL6305 DL6526 DL6309 DL6310 DL6525 DL6305B DL6513

    Untitled

    Abstract: No abstract text available
    Text: □ ANALOG DEVICES FEATURES Superior Replacement for Other 1.2V References Wide Operating Range: SOfiA to 5mA Low Power: 60/iW Total Pq at 50juA Low Temperature Coefficient: 10ppm/°C max, 0 to +70°C AD589M 25ppm/°C max, -55°C to +125°C (AD589UI Two-Terminal "Zener" Operation


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    PDF 60/iW 50juA 10ppm/Â AD589M) 25ppm/Â AD589UI MIL-STD-883 AD589 AD589 AD7533.

    TRANSISTOR 2SA1076

    Abstract: 2SA1075 2SA1076 TRANSISTOR 2Sa 1075 2SC2526 transistor 2SA TRANSISTOR 2sc2526 transistor 2SA 374 2sc2525 2SA audio POWER TRANSISTORS
    Text: I? FUJITSU MICROELECTRONICS 374^7^2 F U JIT S U 2SÄ1075 M IC R O E L E C T R O N IC S 374970^ □ 2 S Ä 1076 VaS-tais FUJITSU MICROELECTRONICS i7c oififn SILICON PNP RING E M IT T E k TRANSISTORS 12 AMP, 120 & 160 VOLT DESCRIPTION FEATURES The 2SA1075/2SA1076 are wellsuited for high frequency power


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    PDF 2SA1075 2SA1076 2SA1075/2SA1076 2SC25251 2SC2526, O-220 TRANSISTOR 2SA1076 TRANSISTOR 2Sa 1075 2SC2526 transistor 2SA TRANSISTOR 2sc2526 transistor 2SA 374 2sc2525 2SA audio POWER TRANSISTORS

    MN1554

    Abstract: ram tite 45 MN1551 MN1500 MN1550 pshxy
    Text: PANASONIC INDL/ELEK -CIO 72 Î>É"| 1^33052 DOOSñt.1 3 |~~ MN 1500 Family— 5 MN 1554 MN 1550 Series DD 'J £ a —$>(4-Blt) 6932852 PANASONIC 72C INDL»ELECTRONIC 05861 MN1 554(M N 1 5 5 0 Seríes igttffê • CMOS 4 M'V I- l f - y y - T O n a y ü a - J


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    PDF MN1500 MN1554 MN1550 MN1554 EC-1500A MN1500 42-DIP/ 42-SDIP ram tite 45 MN1551 pshxy

    LVX273

    Abstract: 74LVX273 74LVX273M 74LVX273MTC 74LVX273MTCX 74LVX273MX 74LVX273SJ 74LVX273SJX M20D
    Text: LVX273 National Semiconductor & 74LVX273 Low Voltage Octal D Flip-Flop General Description Features The LVX273 has eight edge-triggered D-type flip-flops with individual D inputs and Q outputs. The common buffered Clock CP and Master Reset (MR) input load and reset


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    PDF 74LVX273 LVX273 74LVX273 bSG1125 74LVX273M 74LVX273MTC 74LVX273MTCX 74LVX273MX 74LVX273SJ 74LVX273SJX M20D

    Untitled

    Abstract: No abstract text available
    Text: UESI101 UES1102 UES1103 RECTIFIERS High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27-150 FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are


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    PDF UESI101 UES1102 UES1103 BYV27-50 BYV27-100 BYV27-150 UES1101 100ms

    Untitled

    Abstract: No abstract text available
    Text: 3A Adjustable Linear Regulator Description The CS-5203-1 linear regulator pro­ vides 3A at adjustable output volt­ ages with an accuracy of +1.5%. The device uses two external resis­ tors to set the output voltage with­ in a 1.25V to 5.5V range. The regulator is intended for use as


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    PDF CS-5203-1 O-220 CS-5203 O-220

    SRC14

    Abstract: No abstract text available
    Text: TPIC44H01 4-CHANNEL SERIAL AND PARALLEL HIGH-SIDE PRE-FET DRIVER SLIS088 - SEPTEMBER 1998 DA PACKAGE TOP VIEW Serial or Parallel Control of Gate Outputs Sleep State for Low Quiescent Current cs Independent On-State Source Short-to-Ground (Shorted-Load) Detection/Protection


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    PDF TPIC44H01 SLIS088 SRC14

    tube 2B29

    Abstract: E21B lc6554 bp options bml dpm 001 tia lc6554h 4958 LC6500 LC6554D NFS-80A-0100 EVA800
    Text: Ordering num ber:EN 2156B CMOS LSI [ No. 2156B LC6554D,6554H 4K-Byte ROM-Contained Single-Chip 4-Bit Microcomputers with FLT, LED Drivers The LC6554D/H are single-chip 4-bit microcomputers that contain a 4K-byte ROM, IK -b it RAM, and have 64 pins. The LC6554D/H have 57 pins fo r ports - 28 pins fo r 7 input/output common ports, 21 pins for 6 output ports, and


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    PDF 2156B LC6554D 6554H LC6554D/H tube 2B29 E21B lc6554 bp options bml dpm 001 tia lc6554h 4958 LC6500 NFS-80A-0100 EVA800

    74S181N

    Abstract: LS/74S181
    Text: Am54S/74S181 Four-Bit Arithmetic Logic Unit/Function Generator Distinctive Characteristics • Advanced Schottky technology • Performs 16 arithmetic operations including add, sub­ tract, double and compare. • Performs all 16 possible logic operations of two


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    PDF Am54S/74S181 MIL-STD-883. 74S181N LS/74S181

    Untitled

    Abstract: No abstract text available
    Text: ASSEMBLY NUMBER LENS 5 5 0 - 1 I07F RED 5 5 0 - I207F YELLOW 550-I307F GREEN DIM. COLOR "A" . 197 DIFFUSED OPERATING LED CHARACTERISTICS .197 LUMINOUS INTENSITY WAVELENGTH DOMINANT FORWARD VIEWING REV. 25°C GREEN MIN. 1.5 1.2 1.2 TYP. 2.3 1.8 1.8 583 565


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    PDF I207F 550-I307F 50juA)

    TRANSISTOR 2Sa 1075

    Abstract: TRANSISTOR 2Sc 2525 2SA audio POWER TRANSISTORS 2SA transistor 2SA1075 transistor 2SA 2SA POWER TRANSISTORS 2SA1076 TRANSISTOR 2SA1076 2sa tr
    Text: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SA1075 2SA1076 SILICON PNP RING EMITTER TRANSISTOR RET T h e 2S A 1 0 7 5 /2 S A 1 0 7 6 are silicon PNP general purpose, high power switching transistors fabricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) te c h ­


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    PDF 2SA1075 2SA1076 1075/2SA 2525/2SC 10MHz 300ms TRANSISTOR 2Sa 1075 TRANSISTOR 2Sc 2525 2SA audio POWER TRANSISTORS 2SA transistor transistor 2SA 2SA POWER TRANSISTORS 2SA1076 TRANSISTOR 2SA1076 2sa tr

    TRANSISTOR 2SC

    Abstract: transistor 2sc 18 2SC2522 transistor 2sc pnp fujitsu ring emitter 2sc2523 high power switching transistor 2sc
    Text: SILICON HIGH SPEED POWER TRANSISTOR 2SC 2522 2SC 2523 S e p te m b e r 19 79 SILICON NPN RING EMITTER TRANSISTOR RET T he 2 S C 2 5 2 2 /2 S C 2 5 2 3 are silicon NPN general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itter Transistor (R E T ) tec h ­


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    PDF 2SC2522 2SC2523 50jU-A, 300jus TRANSISTOR 2SC transistor 2sc 18 transistor 2sc pnp fujitsu ring emitter 2sc2523 high power switching transistor 2sc

    2SC2526

    Abstract: 2SC2525 TRANSISTOR 2Sc 2525 TRANSISTOR 2SC TRANSISTOR 2SC2525 2SA1076 LC 311 TRANSISTOR 2sc2526 "ring emitter" 2SC25
    Text: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SC 2525 2SC 2526 S epte m be r 19 79 SILICON NPN RING EMITTER TRANSISTOR RET The 2 S C 2 5 2 5 /2 S C 2 5 2 6 are silicon NPN general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itter Transistor (R E T ) tec h ­


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    PDF 2SC2525 2SC2526 50juA 300jus 2SC2526 TRANSISTOR 2Sc 2525 TRANSISTOR 2SC TRANSISTOR 2SC2525 2SA1076 LC 311 TRANSISTOR 2sc2526 "ring emitter" 2SC25

    NPN transistor 2527

    Abstract: 2SA1077 tf 011
    Text: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SA1077 Septem ber 1979 SILICON PNP RING EM ITTER TRANSISTOR RET T h e 2 S A 1 0 7 7 is silicon PNP general purpose, high pow er sw itching transistors fab ricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) te c h n o lo g y. R E T


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    PDF 2SA1077 2SA1077 50juA, 10MHz 300/is NPN transistor 2527 tf 011

    NS4890

    Abstract: NSA 2000 inverter 7490DC XC74UL32AAN
    Text: XC74UH00AAM CMOS Logic ♦ CM OS 2-Input NAND Gate • Applications ♦ High Speed Operation tpd=7ns TYP ▲ ~ xw .x n ♦ Operating Voltage Range 2V~6V • • ♦ Palmt0Ps Digital Equipment Low Power Consum ption 1/iA MAX ■ General Description ■ Features


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    PDF XC74UH00AAM XC74UH00AAM OT-25 XC74ULU04AN NS4890 NSA 2000 inverter 7490DC XC74UL32AAN

    op2134

    Abstract: op2132 radio av receiver schematic diagram OP2137 AB1432 28Kp Fiber-optic temperature sensor 850nm photodiode cascode transimpedance NE5211D SA5211
    Text: N E /S A 5 2 1 1 Transimpedance Amplifier 180MHz Preliminary Specification DESCR IPTIO N The NE/SA5211 is a 28k£2 transimpe­ dance, wide-band, low noise amplifier with differential outputs, particularly suit­ able for signal recovery in fiber optic receivers. The part is ideally suited for


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    PDF NE/SA5211 180MHz) NE/SA5211 180MHz 10/jF 50Mb/s BPF31, 850nm NE5211 NE5214 op2134 op2132 radio av receiver schematic diagram OP2137 AB1432 28Kp Fiber-optic temperature sensor 850nm photodiode cascode transimpedance NE5211D SA5211

    Laser Diode for cr rw

    Abstract: b0711 tsz02201 BU9390FV BU9390FV-1 BU9390FV-1-2 TSZ22111
    Text: RDNm PRODUCTS TYPE Sem iconductor IC BU9390FV STRUCTURE - Silicon Monolithic Integrated Circuit PRODUCT SERIES •' 4CH Laser Diode Driver fo r CD-R/RW TYPE : BU9390FV PACKAGE OUTLINES : Figure. 1 BLOCK DIAGRAM Figure. 2 APPLICATION Figure. 3 TEST CIRCUIT


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    PDF BU9390FV TSZ02201-BU9390FV-1 TSZ22111 Laser Diode for cr rw b0711 tsz02201 BU9390FV BU9390FV-1 BU9390FV-1-2

    LT 7207

    Abstract: 7207a n07a ICM7207IPD ICM7207A ICM7207AIPD w6553 ta 7207 ICM7208 7207 switch
    Text: IC M 7 2 0 7 / A CMOS Timebase Generator GENERAL DESCRIPTION FEATURES The ICM7207/A consist of a high stability oscillator and frequency divider providing 4 control outputs suitable for fre­ quency counter timebases. Specifically, when used as a fre­ quency counter timebase in conjunction with the ICM7208,


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    PDF ICM7207/A ICM7208, ICM7224 ICM7225 5536MHz andCM7225, LT 7207 7207a n07a ICM7207IPD ICM7207A ICM7207AIPD w6553 ta 7207 ICM7208 7207 switch