Untitled
Abstract: No abstract text available
Text: TD62007P TD62007P DAR LINGTON BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC D R IV E R Features • • • • Output Rating . 22v/150mA Output Clamp Diodes Inputs Compatible with 9 % 15V P-MOS, C-MOS Protective Diodes Against a Negative Input Voltage
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TD62007P
TD62007P
22v/150mA
120mA
120mA
163S2
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8086 interrupt vector table
Abstract: microprocessor 8086 Program relocation 8086 manual 8086 timing diagram 8282/8283 latch used for 8086 8086 microprocessor architecture diagram 8086 physical memory organization 8286/8287 amd 8086 manual of microprocessors 8086
Text: 8086 16-Bit M ic ro p ro ce sso r ¡A P X 8 6 Fam ily F IN A L DISTINCTIVE CHARACTERISTICS • • • • • • M U LTIBU S system interface Three speed options - 5 M H z for 8086 - 8 M H z for 8086-2 - 10M H z for 8086-1 Directly addresses up to 1 Mbyte of memory
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16-Bit
APX86
10MHz
8086 interrupt vector table
microprocessor 8086 Program relocation
8086 manual
8086 timing diagram
8282/8283 latch used for 8086
8086 microprocessor architecture diagram
8086 physical memory organization
8286/8287
amd 8086
manual of microprocessors 8086
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FP3000
Abstract: FP3000A SI 1360 H fp3024 lucas 1030 FP3012,A FP3120 FP3006 ai 937
Text: The foldback characteristic provides the suppressors with an increased surge current handling capability coupled with lower clamping voltages compared with industrial standard devices. Each device is 100% tested. In the event of an abnormal surge causing the ratings of
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FP3000&
FP3000A
FP3000
FP3000A
SI 1360 H
fp3024
lucas 1030
FP3012,A
FP3120
FP3006
ai 937
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6457 maintal
Abstract: MIL-C-22759 honeywell 6457 Ai203-ceramic din 7168 317xc MIL-STD-127b 53-S1 Hytrel G Raychem DR-25
Text: JU L HONEYW ELL Logo A rticle Nr. Sensing face/0 \ «¡M, ¡ m u í 3 5+0'5 ' - 0,2 lin ú -i* H i i l l í p ill t / l\ ¡ l| j | í Housing and mounting nuts: Stainless steel i /^\ Cabel shield connected /§\ : Sensing face: 1.4541 to DIN 17440 to housing
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100m0hm@
100mA
DR-25
MIL-C-22759/16
500Vdc
U4000h
6457 maintal
MIL-C-22759
honeywell 6457
Ai203-ceramic
din 7168
317xc
MIL-STD-127b
53-S1
Hytrel G
Raychem DR-25
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LTC1100
Abstract: lt1167 Instrumentation Amplifier lt1167 A2N4
Text: r r u n m TECHNOLOGY _ LT1167 Single Resistor G ain P ro g ra m m a b le , Precision Instrum en tation A m p lifie r FCRTURCS DCSCRIPTIOn • Single Gain Set Resistor: G = 1 to 10,000 ■ Gain Error: G = 10, 0.08% Max ■ Gain Nonlinearity: G = 1 0 ,10ppm Max
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LT1167
10ppm
LT1167
16-Bit,
10Oksps,
105jaA
16-Bit
90MHz
900ns
LTC1100
Instrumentation Amplifier lt1167
A2N4
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KM28C64A-20
Abstract: KM28C64A15 KM28C65A KM28C65A-20 KM28C64A-25 KM28C64A-12 KM28C65A15 KM28C64A25
Text: SAMSUNG ELECTRONICS INC D • 7^4142 OOlböfiO TSS SflGK CMOS EEPROM KM28C64A/KM28C65A 8 K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C64AJ65A: Commercial — KM28C64AK65AI: Industrial • Simple Byte Write & Page Write
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KM28C64A/KM28C65A
KM28C64A/65A:
KM28C64AK65AI:
KM28C65A)
64-Byte
120ns
7Tb4142
KM28C64A/KM28C65A
KM28C64A-20
KM28C64A15
KM28C65A
KM28C65A-20
KM28C64A-25
KM28C64A-12
KM28C65A15
KM28C64A25
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PJ 0416 1v
Abstract: til 3010 1208FRAM 7S5SG15
Text: RAMTRON 4SE CORP D 7SSSG15 GGÜÜO^b 12D I RAH F M 1 2 0 8 F R A M M e m o ry r ^ lM T R O 4,096-Bit Nonvolatile Ferroelectric RAM Product Preview N Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ CMOS Technology with Integrated Ferroelectric
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7S5SG15
1208FRAMÂ
096-Bit
512wx8b
10-Year
-150ns
300ns
250ns
24-Pin)
PJ 0416 1v
til 3010
1208FRAM
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AOR 3000
Abstract: D0214 pax thyristor marking aor 1cv5 22J 1KV Thyristor 100A,100V thyristor 150A
Text: T h y r i s t o r s SiBOD B r e a k o v e r D e v i c e s C 3 Y D O M I Control overpower T "Crow B sr” Prolsctlan MECHANICAL CHARACTB1ST1CS 76 protect sensitive teieconYnunications • Transfer molded, void free epoxy body circuitry, Qydcsm Thyristors (SiBCST
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C618
Abstract: j 182 C1832 C571 CMD10B G0011 C233
Text: TO -I8 ' SOLID STATE LAMPS 'it » _ • J08EC4H • . . CHICAGO MINIATURE LAMP STANDARD RED 960 U rW " 0 B 0 0 D 11 S 2 a ■ CHICAGO MINIATURE BRAND 01 182 D ~T^ Q j ‘ CMD10B PACKAGE DIMENSIONS DESCRIPTION The CMD10B is a GaAsP light emitting diode mounted on a TO-18 header with a clear epoxy
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CMD10B
G0011Ã
CMD10B
25pSEC
50nSEC
C576A
MIL-S-750,
C618
j 182
C1832
C571
G0011
C233
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def stan 07-55
Abstract: No abstract text available
Text: -S5 ‘O C o ^ *O ia ^^ s = t> 5 * -S i TESTS » -o ìI < TECHNICAL DATA Effective aenalnq distança [m m ] ]mm] Differential travel M . StobBlty of >en»tng dirt an c< Reproduceobìllty w Repetition rote of awning [Hz] Swing—on delay Power—on false pulse
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50jjs
def stan 07-55
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TCZT8021
Abstract: u 110 telefunken 8020-TCZT
Text: TELEFUNKEN ELECTRONIC ‘ÎÛD D • ô'ÏSOQ'îb 0007661 5 IALGG TCZT 8020 •TCZT 8021 iniLitPWl&ilK electronic Creativa Tsehnotogfes r-V /-7 / Matchable Pairs - Emitter and Detector Emitter: Detector: Application: GaAs IR Emitting Diode Silicon NPN Epitaxial Planar Phototransistor
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LT1220
Abstract: No abstract text available
Text: ITECHNOLOGY M LTC1273 LTC1275/LTC1276 12-Bit, 300ksps Sampling A /D Converters with Reference F€flTUR€S D C S C R IP T IO n • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC1273/LTC1275/LTC1276 are 300ksps, sampling 12-bit A/D converters that draw only 75mW from single
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LTC1273
LTC1275/LTC1276
12-Bit,
300ksps
LTC1273/LTC1275/LTC1276
300ksps,
12-bit
600ns
25ppm/Â
LT1220
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5962-9213901HXC
Abstract: mhf 2805s
Text: interpoint r 10301 Willows Road P.O. Box 97005 MHF+ SERIES DC-DC CONVERTERS Redmond, WA 98073-9705 TEL: 206 8B2-3100 TEL: (800) 822-8782 FAX: (206) 882-1990 • • • • • • • • • Up to 15 watts output power Full power operation from -5 5 to + 125°C
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8B2-3100
MIL-STD-883
5962-9213901HXC
mhf 2805s
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fp1016
Abstract: keytek* 424 generator fp1016a FP1018 FP103 FP1030A FP1000A pic 6030 ledex FP1009
Text: TRANSHIELD* SILICON SURGE SUPPRESSOR DIODES 9-275V BREAKDOWN VOLTAGES FP1000& FP1000A SERIES V_ _ _ Transhield FP1000 and FP1000A surge suppressors are silicon diffused junction devices having bidirectional foldback characteristics. Devices are available having tolerances on the
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FP1000&
FP1000A
FP1000
PAGE10
3800/61/L
5M/185/R
fp1016
keytek* 424 generator
fp1016a
FP1018
FP103
FP1030A
pic 6030
ledex
FP1009
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DFP300
Abstract: sc 3710 DFP180 DFP008 DFP006 DFP007 DFP009 DFP012 cc 3025 diode
Text: The suppressors are intended for telecommunication, data transmission and general applications where permanent damage could otherwise be caused to integrated circuits, m.o.s. devices, hybrids and other voltage sensitive semiconductors and components by surges deriving from lightning, electrostatic discharges, NEMP, inductive switching, etc.
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DFP000
DFP300
sc 3710
DFP180
DFP008
DFP006
DFP007
DFP009
DFP012
cc 3025 diode
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DIN ISO 1302
Abstract: Si 6823 def stan 07-55 ZS-00209-71 raychem EPD 20 b974 EPD39696B B9747 39696B CS02
Text: -S5 ‘O C o ^ *O ia ^^ s = t> 5 * -S i TESTS » -o ìI < TECHNICAL DATA Effective aenalnq distança [m m ] ]mm] Differential travel M . StobBlty of >en»tng dirt an c< Reproduceobìllty w Repetition rote of awning [Hz] Swing—on delay Power—on false pulse
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ZS-00313-01
932AB2Wâ
ZS-00209-71
within-25'
39696B
efy11>
ZS-0031
DIN ISO 1302
Si 6823
def stan 07-55
ZS-00209-71
raychem EPD 20
b974
EPD39696B
B9747
39696B
CS02
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Untitled
Abstract: No abstract text available
Text: u n m TECHNOLOGY Dual, Precision JFET Input O p A m p F6RTUR6S DCSCMPTIOn • Handles 10,000pF Capacitive Load The LT1457 is a dual, JFET input op amp optimized for handling large capacitive loads In combination with preci
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000pF
LT1457
220jaV
130dB.
13nV/VHz
130dB
ucnno1457
LT1457â
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CD4047 pin diagram
Abstract: pin of ic cd4047 CD4047 working CD4047 POWER pwm amplifier sawtooth wave op amp application CD4047 INTERNAL DIAGRAM LTC1267
Text: n w m l t c i 4 3 o a TECHNOLOGY High P ow er S tep -D ow n S w itching R eg u la to r C o n tro lle r FCRTURCS DCSCRIPTIOfl • High Power 5V to 1.xV-3.xV Switching Controller: Can Exceed 10A Output ■ Maximum Duty Cycle > 90% Permits 3.3V to 2.xV Conversion Using a Low Power 5V Supply
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000pF
16-Lead
LTC1148
LTC1159
CD4047 pin diagram
pin of ic cd4047
CD4047 working
CD4047 POWER pwm amplifier
sawtooth wave op amp application
CD4047 INTERNAL DIAGRAM
LTC1267
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ZP3150
Abstract: ZP3030 lucas zp3056 zp3150a bo 947 ZP3006 ZP3006A ZP3007 ZP3300 ZP3100
Text: y V . Transhield ZP3000 and ZP3000A surge suppressors are silicon diffused junction pn devices having unidirectional positive clamping characteristics. Devices are available having tolerances on the nominal breakdown voltages of ± 10% ZP3000 series and ± 5%
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ZP3000
ZP3000A
ZP3000
ZP3000A
ZP3150
ZP3030
lucas zp3056
zp3150a
bo 947
ZP3006
ZP3006A
ZP3007
ZP3300
ZP3100
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