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    50IV Price and Stock

    IndustrialSupplies.com QUS250IV

    PLASTIC STACKING BIN 16-1/2 X 14
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    DigiKey QUS250IV Box 54 6
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    GSI Technology GS8642Z36GB-250IV

    IC SRAM 72MBIT PARALLEL 119FPBGA
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    DigiKey GS8642Z36GB-250IV Tray 11 1
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    Mouser Electronics GS8642Z36GB-250IV
    • 1 $194.49
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    Belden Inc RA050IV

    1/2" RIGHT ANGLE IVORY
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    Belden Inc IC050IV

    1/2" INSIDE CORNER IVORY
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    Belden Inc OC050IV

    1/2" OUTSIDE CORNER IVORY
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    50IV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2


    Original     		PDF CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		PDF CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P

    Untitled

    Abstract: No abstract text available
    Text: Extract from the online catalog HDFK 50I-VP VERGUSSPLATTE Order No.: 0709343 Feed-through terminal block Product notes WEEE/RoHS-compliant since: 01/01/2003 Commercial data EAN


    Original     		PDF 50I-VP

    Untitled

    Abstract: No abstract text available
    Text: Extract from the online catalog HDFK 50I-VP DICHTPLATTE Order No.: 0709330 Feed-through terminal block Product notes WEEE/RoHS-compliant since: 01/01/2003 Commercial data EAN 4017918245450


    Original     		PDF 50I-VP

    Untitled

    Abstract: No abstract text available
    Text: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar


    Original     		PDF CGHV14500 CGHV14500 CGHV14

    Untitled

    Abstract: No abstract text available
    Text: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2


    Original     		PDF CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P

    Protocols

    Abstract: TACAN arn-118 stanag 4062 STANAG 4015 AMSG-719 stanag 4074 encoder litton MIL-HDBK-1553B ARC-182 vehicle multiplex system
    Text: MIL-HDBK-1553A 1 November 1988 NOT MEASUREMENT SENSITIVE SUPERSEDING MIL-HDBK-1553 9 November 1984 M U L T I P L E X A P P L I C A T I O N S H A N D B O O K AMSC: N/A FSC: MCCR DISTRIBUTION STATEMENT D. Distribution authorized to the Department of Defense


    Original     		PDF MIL-HDBK-1553A MIL-HDBK-1553 Protocols TACAN arn-118 stanag 4062 STANAG 4015 AMSG-719 stanag 4074 encoder litton MIL-HDBK-1553B ARC-182 vehicle multiplex system

    Untitled

    Abstract: No abstract text available
    Text: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar


    Original     		PDF CGHV14500 CGHV14500 CGHV14

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Cree’s CGHV40100 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		PDF CGHV40100 CGHV40100 CGHV40100, CGHV40 V40100P

    CGHV22200

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		PDF CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P CGHV22200-TBions

    idq10

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		PDF CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P CGHV22200-TBions idq10

    Untitled

    Abstract: No abstract text available
    Text: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar


    Original     		PDF CGHV14500 CGHV14500 CGHV14

    Untitled

    Abstract: No abstract text available
    Text: Sealing plate - HDFK 50I-VP VERGUSSPLATTE - 0709343 Please be informed that the data shown in this PDF Document is generated from our Online Catalog. Please find the complete data in the user's documentation. Our General Terms of Use for Downloads are valid


    Original     		PDF com/us/products/0709343 50I-VP EC001283 EC002498

    Untitled

    Abstract: No abstract text available
    Text: ucüdiuy Iou/1 y I A IVI F3 R e vise d 1 0-0 C RF Coax Connectors DIN Inserts inontimipr Coaxial Inserts 50iV75 12) Bulkhead cable jack for male connectors 0 Max. 2.6 .102 2.67 .105 C ab le Type R G 316 (50 Q) R G 179 (75 0 ) Width A c ro s s Flats of Hex Profile


    OCR Scan     		PDF 50iV75

    12FL

    Abstract: KDE0505PFS1-8
    Text: r SPECIFICATION FOR APPROVAL CUSTOMER DESCRIPTION DIMENSIONS MODEL APPROVED NO APPROVED BY AUTHORZIED DC BRUSHLESS FAN 50X50X10 mm KDE0505PFS1-8 S3-&U. \X\ DAWN. ftt* CHKD. N, mm% j SPEC. NO. 052354300 ISSUE DATE 01.16.1996 APPD. -5 # = - EDITION REVISE DATE


    OCR Scan     		PDF TEL886-7-7163069 50X50X10 KDE0505PFS1-8 KDE0505PFS1-8 UL2468 26AWG, UL2468 26AWG 12FL

    Untitled

    Abstract: No abstract text available
    Text: HFA3724 HARRIS S E M I C O N D U C T O R 400MHz Quadrature IF Modulator/Demodulator January 1997 Description Features Integrates all IF Transmit and Receive Functions The Harris 2.4GHz PRISM chip set is a highly integrated five-chip solution for RF modems employing Direct Sequence


    OCR Scan     		PDF HFA3724 400MHz 10MHzto 400MHz HFA3724 HFA3722 500MHz 300MHz

    Untitled

    Abstract: No abstract text available
    Text: HFA3724 HARRIS S E M I C O N D U C T O R 400MHz Quadrature IF Modulator/Demodulator August 1997 Description Features Integrates all IF Transmit and Receive Functions The Harris 2.4GHz PRISM chip set is a highly integrated five-chip solution for RF modems employing Direct Sequence


    OCR Scan     		PDF HFA3724 400MHz 10MHzto 400MHz HFA3724 HFA37 1-800-4-HARRIS

    MJ10100

    Abstract: AR-109 AR109/D
    Text: POWER TRANSISTOR SAFE OPERATING AREA — SPECIAL CONSIDERATIONS FOR MOTOR DRIVES — Prepared By W arren Schultz Motorola Inc. Power Products Division Phoenix, Arizona Reprinted by Permission of Intertech Communications, Inc., from the Proceedings of Motorcon '81.


    OCR Scan     		PDF AR109/D 1PHX15069-2 MJ10100 AR-109 AR109/D

    bc 331

    Abstract: mosfet ir 840 irlms4502 P 838 X MOSFET diode marking code YF IRLMS5703 IRLMS6702 Micro6 Package marking JB diode D 042 silicon rectifier diode
    Text: P D -93759 International IOR Rectifier IRLMS4502 HEXFET Power MOSFET • • • • Ultra Low O n-R esistance P-Channel M O SFET Surface M ount A vailable in Tape & Reel V dss = -12V RüS on = 0.042Î2 Description These P-Channel MOSFETs from International Rectifier


    OCR Scan     		PDF PD-93759 IRLMS4502 OT-23. EIA-481 EIA-541. bc 331 mosfet ir 840 irlms4502 P 838 X MOSFET diode marking code YF IRLMS5703 IRLMS6702 Micro6 Package marking JB diode D 042 silicon rectifier diode