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Catalog Datasheet	MFG & Type	PDF	Document Tags
FE42-0001 Abstract: SVC6310 Text: GaAs Foundry Services PROCESS HI2 HI2 V2.00 Features • Typical RF Performance 0.5 µm MESFET Technology for High Gain/Low Noise Applications MMICs up to 20 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging	Original	PDF	50IDSS 12/18GHz 25IDSS 25GHz 300um FE42-0001 SVC6310

Catalog Datasheet

MFG & Type

PDF

Document Tags

FE42-0001

Abstract: SVC6310
Text: GaAs Foundry Services PROCESS HI2 HI2 V2.00 Features • Typical RF Performance 0.5 µm MESFET Technology for High Gain/Low Noise Applications MMICs up to 20 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging

Original

PDF

50IDSS 12/18GHz 25IDSS 25GHz 300um FE42-0001 SVC6310