d2sb60a
Abstract: D2SB80A
Text: î/y ^ n /'fy ^ 'fy M - j'j v V ÿ 'C t - F Bridge Diode Single In-line Package OUTLINE DIMENSIONS D2SBDA 800V 2A •»S Ü S IP H • H yf-V I fsm «a± *nîEowcB, memm*zmm<rc-£u • Æ fê ü RATINGS Absolute Maximum Ratings (fêÂw&vvH-ê- TI = 2 5 t)
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D2SB60A
D2SB80A
50HzjE5$
J514-5
D2SB80A
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MGE 1500 rt
Abstract: Diode GFT a9ay
Text: ERR 1 5 18ooa /£ : Outline Drawings GENERAL-USE RECTIFIER DIODE : Features • D iffu s e d -ju n c tio n • Flat p a ckag e typ e : Applications • ' f t ^ , E l e c t r i c • $ rS iE !5 g y |tS railw a y a n d c h e m ic a l use re ctifie rs V e h ic le use re c tifie rs
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18ooa)
50lct3
WEIGHT400g
jftftl80'
50HzjH3Â
MGE 1500 rt
Diode GFT
a9ay
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Untitled
Abstract: No abstract text available
Text: u^y P —P X 'V O M K U tyoe Super Fast Recovery Diode Twin D iode • W f é T ÎIÈ III O U T L IN E D IM E N S IO N S DE5LC20U 200V 5A ■ R A T IN G S Absolute Maximum Ratings 3s g m Item if c m"t f |j ¡'"mi ■0-L' O p e ra tin g J u n c tio n T e m p e ra tu re
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DE5LC20U
E5LC20U
20/um
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CGJ-1
Abstract: EGP14-08 s4hw EGP14 X103 FF 300 R 12 KS 4 thyristor CGJ1 EGP1408
Text: EGP14 700A ± * M ') X 9 Outline draw ings GENERAL-USE THYRISTOR • * * : F e a tu re s • T S if llia Flat package type • Large di/dt • Large dv/dt ■ffijis : Applications •i — Mot or control applications ftJIW • b— Heater control applications
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EGP14
EGP14-08
50HzjE5SilfeiiiÃ
ftl80'
CGJ-1
EGP14-08
s4hw
X103
FF 300 R 12 KS 4 thyristor
CGJ1
EGP1408
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G1501
Abstract: No abstract text available
Text: EG 1501FL-25 1500A * ± V 4 ')X * : o u tn n e d r a w in g s G EN ER A L-USE TH YR IS TO R Features •¥ 3 !* » Flat package type • ¡¡B# *> W ijlE- t# ^ (d i/d t)A 'f± |tL ' Large di/dt • K l f '^ '7 E ± # ^ ( d v / d t ) * < '^ | i t ' Large dv/dt
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1501FL-25
FL-25
50HzJE5
3i35T
E3Ti30S3if
95t/R89
G1501
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Untitled
Abstract: No abstract text available
Text: SQ.I.P.3S! T/U'Vv ^'I'tT-K Square In-line Package Bridge Diode • O U T L IN E D IM E N S IO N S S2VBD 600V 2A ■ R A TIN G S A bsolute Maximum R atings - _ _ E3 At % ft. — ■— •— _ * o TT ——— -— _ Type No. Symbol Conditions
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50HzIE3Â
S2VB60
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Untitled
Abstract: No abstract text available
Text: Single In-line Package Bridge Diode • Low Noise type O U TL IN E DIM ENSIONS D6SBL 600V 6A ■ RATINGS Absolute Maximum Ratings m s ie ^ Symbol Item fS fc fi* S tora ge Tem perature *> {¡t~ C o n d ilL s - _ DD ^ -T yp e ^N o ^
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6SB60L
50HzjE5Ã
06SBD
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Untitled
Abstract: No abstract text available
Text: U tipe Super Past Recovery Diode Single Diode OUTLINE DIMENSIONS SF6L20U 200V 6A • f iy 'i'x •trr3 5 n s •ÿ c ^ J L Æ -J b K • * « f f iE 2 K V S B •S R B S m y 'J - K 'd b OA. S M • i. a s. Ufcfèm fa RATINGS • $ ë & il:* :ü È Î§
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SF6L20U
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode mmttîim S16L60 o u t lin e dim ensions 600V 16A •S B Œ • t r r 100ns • e jc t f 'J 'S O i •P F C •S R S S 0 7 U - n ~ ^ J l y 0m m . OA. f a Mfctèm RATINGS Absolute Maximum Ratings m Operating Junction Temperature
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S16L60
100ns
50HzjE
50HzJE5Â
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induction furnace
Abstract: high speed thyristor High Frequency Induction furnace thyristor ltt 30S3 EGN24 sl500
Text: EGN24 2 5 a s « % ± W 7 ,5 ) * Outline draw ings HIGH SPEED THYRISTOR • f t f t : Features •? — Shor t turn-off time • B B # * 7 i/ ± - t & $ (d v / d t )r t'':* £ L ' Large dv/dt : Applications •C V C F CVCF inverters • High frequency induction furnace
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EGN24
EGN24-
50HzjEaiÂ
ijftftl80'
11S19^
l95t/R89
induction furnace
high speed thyristor
High Frequency Induction furnace
thyristor ltt
30S3
sl500
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k3fk
Abstract: s2l40
Text: p—nx$r<3f—K Super Fast Recovery Diode A xial D io d e • O U T L IN E D IM E N S IO N S S2L40 400V 1.1A ■ RATINGS Absolute Maximum Ratings m s nCÎ’F? Item Symbol ■ttA m m m i± Maximum Reverse Voltage ¿b ¡m'/M Average Rectified Forward Current
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S2L40
S2U40
50HzJE5£
k3fk
s2l40
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SG10SC6M
Abstract: marking XN
Text: Schottky Barrier Diode Twin Diode • fl- tlH OUTLINE SG10SC6M 60 V 10A Feature • Tj=1751C • Tj=175°C • Full Molded Main Use • Switching Regulator • DC/DC Z \ y j K - $ • DC/DC Converter • m m .'f- h . 0A#t§ • m m .rtt-s z n m m • Home Appliance, Game, Office Automation
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SG10SC6M
FTO-220G
50Hz-C
marking XN
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IAA180
Abstract: LM 8010 ERE51 SIE01
Text: E R E 5 1 , S I E O 1 6 A I * ± '< 7 - * * * - K • W fê 'r J 'îÈ : O utline D raw ings GENERAL-USE RECTIFIER DIODE : Features • H? G l a s s passivated chip • ^M#£L2i^/±(VRSM)A’ffii''' High non-repetitive peak reverse voltage (VRSm) fsm )
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ERE51
SIE01
IAA180
LM 8010
ERE51
SIE01
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ERE75
Abstract: T151 T810 SH250
Text: E R 7 E 5 3 o a ’ Outline Drawings * - k Units mm FAST RECOVERY DIODE • 1# ^ : Features + 'f\* —'lr—1bfr'y-f • Planer chip Soft recovery type • T& 'vY’f c Stud mounted : Applications •m % iB Switching power supplies • Free-wheel diode
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ERE75
ERE75
50HziE
8teftl80'
I95t/R89)
Sh250
T151
T810
SH250
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ERG51
Abstract: SIG01
Text: ERG51 ,SIG01 30A — is a m m ? 4 *— k B i n s t a : Outline Drawings Units mm GENERAL-USE RECTIFIER DIODE • 4 $ £ I Features • - 7 i'B 's J - " / '? Glass passivated c h ip • H ig h n o n -re p e titiv e peak reverse v o lta g e {VRSM) H ig h s u rg e c u rre n t ca p a b ility
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ERG51
SIG01
50HzIE?
ERG51
SIG01
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A6062S-T5
Abstract: 1S1033 diodes ir mais 1S1034 1S1035 1S1036 1S1037 1S1038
Text: ijjft S-200 i ORIGIN ELECTRIC CO LTD ►f f l ü É •£ *§ 1 . m i n s a f f l o 2 . iE Í J l- iL f f lo T ^ a t - a J S ILIC O N RECTIFYING DIODES . . r SflE D L . B 1 3 0 7 H 0 0 0 0 0 3 4 • 2 0 0 V - 1 0 0 0 V • 2 0 0 A f l f l ? • • FEATURES
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S-200
B1307H
00V-1000V
1S1033
1S1034
1S1035
1S1036
1S1037
1S1038
A6062S-T5
diodes ir
mais
1S1038
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sih31
Abstract: 0212M
Text: SIH31 150A • : Outline Drawings G E N E R A L-U S E R E C T IF IE R DIO DE ■ ¡N f jl: Features High reverse voltage capability • X9yY'< —7 M Stud mounted : Applications • Battery chargers Brush-less generators • * cO ffe-e S aM ! Others. : M axim um Ratings and C haracteristics
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SIH31
SIH31
50HzjE
50HzJE5
I95t/R89)
0212M
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SRFE
Abstract: AE01 AG01 ERE51 SIE01 T760 T810 T930 SI AG01 aec1
Text: E R E 5 1 , S I E O I 16A * ± '< * 7 - 9 4 * — Y : Outline Drawings — t M K E f f i j ' * t * - F _ GENERAL-USE RECTIFIER DIODE Features i's'sT y ? • Glass passivated chip • High non-repetitive peak reverse • I f —¿ ^ 3 fe ( lFSM )*''*3^'
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ERE51
SIE01
SIE01
50HzIESÃ
egTi30Â
eaTS30Â
l95t/R89
SRFE
AE01
AG01
ERE51
T760
T810
T930
SI AG01
aec1
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180SC
Abstract: No abstract text available
Text: V 3 7 h # - J V J T $r-far—K Schottky Barrier Diode R ectifie r Module • O U T L IN E D IM E N S IO N S D180SC7M 3-M 4 nuts 70V 180A 17 ■ R A TIN G S Absolute Maximum Ratings m mn s Item Symbol Storage Temperature Operating Junction Temperature -&A5M.TÊMJÏ.
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D180SC7M
180SC
17kg-cm
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