Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode OUTLINE Package I FTO-220 SF30SC4 Unit : m m W eight 1.9« T y p 40V 30A P'rFB+XW) 4.5 Feature • T j= i5 ( r c • Tj=1 50°C • P r r s m P K t? • P rrsm R ating • Full M olded • <|v£!*« 3S g * • High lo Rating•Small-PKG
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FTO-220
SF30SC4
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Untitled
Abstract: No abstract text available
Text: Rectifier Diode Surface Mounting Device Single Diode •*WfN-äsH OUTLINE DIMENSIONS Package : M1F M 1 F E Unit : mm 4 0 400V 2A + - — N— i i V - ■K v — ? Cathode m ark < 43 f i £ 2 .8 101 ¡E88 "37 ?00° « ¡ p 1 2 1:6 2 n y H B -g - W D ate code
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M1FE40
50HzJE®
J514-5
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SG30TC
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FTO-220G SG30TC 15M Unit : mm Weight 1.54g Typ nvhfB-SKW 15 0 V 3 0 A .4.5 Feature >Tj=150°C • Tj=150°C • 1 High lo Rating >7HÆ -J b K » » Full Molded 1 Low Ir=40|jA Ir=40|jA ' Resistance for thermal run-away
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SG30TC
FTO-220G
J533-1)
SG30TC15M
50IIz
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6842S
Abstract: No abstract text available
Text: Surface Mounting Device Bridge Diode OUTLINE DIMENSIONS S1NB 800V 1A « f i L t C D S r ö E O L Y C I S , } £ E P tt« £ C !B 1 8 < f c 'Î U MMfàM RATINGS Absolute Maximum Ratings (üfé *v>ifrê-T/=25<C) m 1 Item Storage Temperature Operating Junction Temperature
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50HzjEK®
50HziESife,
30rrent
J514-5
6842S
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ic s1wb
Abstract: No abstract text available
Text: B rW S p -C B ò d ^ ^ ;. D u a l In -H n * P a c k a g e O U T L IN E DIM ENSIO NS S1WB A D/DB 10.5MAX 600V 1A -S1WB :e ? o js , Type No. C lass a y hI£-^Date code j= k -Î5-ÔL' 7-6 0.32±0-05 Unit * mm Weight ! 1.8g • J tte * RATINGS A bsolute Maximum R atings
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50HzIESfo'
50Hz0
ic s1wb
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FtZ MARKING CODE
Abstract: D25SC6M D25SC6MR
Text: Schottky Barrier Diode Twin Diode OUTLINE D25SC6MR Unit :m m P a c k a g e : IT O -3 P W eight 4.3k T y p 15 60V 25A 5.5 n-yt-m XW ) D a te code Feature • Tj=i5(rc • Tj=150°C • P r r s m P K t? • P rrsm R ating • ttU K S B • High lo Rating • 7 J I Æ - J L/K
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D25SC6MR
15ffC
R01GD
D25SC6M
CJ533-1
FtZ MARKING CODE
D25SC6M
D25SC6MR
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DIODE 3LU
Abstract: 3lu diode DIODE 3LU 35 trr35ns 3lu 05 diode
Text: Super Fast Recovery Diode Axial Diode Wtm S3L20U OUTLINE Unit-mm Weight 1.06g Typ Package : AX14 200V 3A 26.5 26.5 Feature • m s 'ix • L o w N oise • trr=35ns • trr= 3 5 n s iT > Main Use * J S fU B M W Marking • S w itc h in g R eg u la to r
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S3L20U
DIODE 3LU
3lu diode
DIODE 3LU 35
trr35ns
3lu 05 diode
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DIODE N7
Abstract: No abstract text available
Text: -j'j vvv'ds-v 7:n.7,ii>'fy:ÿ'fy§ë. Dual In-line Package Bridge Diode OUTLINE DIMENSIONS S 1 W B A D / D B 800V 1A 45 £1 •/j\iuDipyv"^ir-y • H I fsm •HaMÊlcflnffifflMÊ RATINGS • ilfë 3 Îii^ /Ë Î& Absolute Maximum Ratings (féÆw&vvü-ê- T / =25°C)
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50HzjEsSiS,
Tim50HziEsst,
J514-5
DIODE N7
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9EIT
Abstract: D5SBA20
Text: - j 'j v V ÿ ' C t - F Bridge Diode î/ y ^ n / 'f y ^ 'f y M Single In-line Package OUTLINE DIMENSIONS Package : 5S D5SBA n y l- E - t M TO 600V 6A 3.6±a2 as +< *! co 'S- 45 £1 • » s ü s iP A ’ y ' r - y •U L1 S W ( UL File No,E 1 4 2 4 2 2 )
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D5SBA20
D5SBA60
50HziEs
J514-5
9EIT
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5SB10
Abstract: 5SB40 D5SB10 5SB60 SHINDENGEN DIODE D5SB40
Text: T S«tlW -i '7 o3^ S -' iV-ï»s= fliSnK=rfs8Sg»¡,! ÖSnBfl? QQQG4Ö3 51T * S H E J 54E D SHINDENGEN ELECTRIC MFG O U T L IN E D IM E N S IO N S D5SBD l4.6± .3.6 * 600V 6A 2.7±02 0.7±01 ® D (D U n it i mm R A T IN G S iiSÊ& il^SËfê If Absolute Maximum Ratings
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5SB10
5SB20
5SB40
5SB60
50HzIESE®
5SB10
5SB40
D5SB10
5SB60
SHINDENGEN DIODE
D5SB40
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Untitled
Abstract: No abstract text available
Text: Bridoe Diodaf' ^ Dual In-line Package Hl&Tt&ŒI O U T L IN E D IM E N S IO N S S1YBD 600V 0.4A • lÈtèm R A TIN G S Absolute Maximum Ratings at s m O perating Ju n c tio n Tem perature -yr/LSg 1iBE Average Rectified Forward Current - t ± / l s f + - v 'H IB 'B i®
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50HzIESÂ
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D360SC6M
Abstract: L017
Text: Schottky Barrier Diode Diode Module •¿m u OUTLINE Package I Module D360SC6M Unit : mm W eight 66R T yp> Isi Ö 51 3-M4 nui thickness = 3.2 60V 360A p, Feature •« V • High lo Rating-Module-PKG • Low V f • Small 9 je f • 8 jcÖ ^/JV c^L' 0 1 °
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D360SC6M
CJ533-1
D360SC6M
L017
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D20SC9M
Abstract: marking code AJs
Text: Schottky Barrier Diode Twin Diode OUTLINE D20SC9M Unit : mm P a c k a g e : IT O -3 P Weight 4.3« Typ 15 90V 20A Date code Feature • T j= 1 5 0 t: • Tj=150°C • P rrs m T lK r jy is x fä M . • *«9K8B • P rr s m Rating • High lo Rating • 7 J I Æ - J L-K
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D20SC9M
15ffC
J533-1
D20SC9M
marking code AJs
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LT9E
Abstract: No abstract text available
Text: E R D 75 2 oa "f K : O utline D raw ings FAST RECOVERY DIODE • 4$ ^ : Features • Planer chip • V 7 Y l) 1 i ' il) — Soft recovery type • Stud mounted : Applications • Switching power supplies • Free-wheel diode • Others. M axim um Ratings and Characteristics
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50HzjE
ii3Tg5fi35^
I95t/R89)
LT9E
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D20XBD
Abstract: No abstract text available
Text: - j'j v V ÿ 'C B rid g e D io d e î / y ^ n / ' f y ^ ' f y M t - F Single In-line Package O U T L IN E D IM E N S IO N S D20XB TO 800V 20A 45 £1 •»sü siP A ’y ' r - y •U L1S W UL File No,E 1 4 2 4 2 2 • m n • S fÎJ E E x n H I fsm RATING S
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D20XB
50HzIES®
50HZJEKS-,
J514-5
D20XBD
D20XBD
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode m n n . SG40TC12M o u tlin e Package ! FT 0220G Unit : mm Weight 1.54g Typ nyHB-ë-(M ) 120V 40A 4.5 Feature > T j= 1 7 5 °C ' T j= 17 5°C >3 7 JL Æ -JL / K ' Full M o ld ed • Î Ë I r =60| j A 1 L o w Ir =60| j A
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0220G
SG40TC12M
50IIz
J533-1
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Untitled
Abstract: No abstract text available
Text: WSmftWX HWBBM’* -!'* $ $ £ ! Surface Mounting Device Single Diode Rectifier Diode •*WfN-äsH OUTLINE DIMENSIONS Package : 1F D1F60A + < Unit : mm -N - n y —YT—9 /Cathode mark 4.4±0-3 600V 1.2 A 3 ‘I "T 1 t 3 in Lo t- h' t c 4 v GD ! O CM 11 111 ’
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D1F60A
50HzJES&
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DIODE marking code SJ
Abstract: D360SC4M
Text: Schottky Barrier Diode Diode Module •¿m u OUTLINE D360SC4M 40V 360A Feature • High Io Rating-Module-PKG •« V • Low V f f • Small • 8 jcÖ ^/JV c^L' 9 je Main Use • High Power Switching Regulator • DC/DC Converter • Main Frame • IC Tester
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D360SC4M
CJ533-1
DIODE marking code SJ
D360SC4M
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jis H4100
Abstract: a6063 S-200-02FR S-200-04FR A6063S-T A6063S
Text: SILICON FAST RECOVERY RECTIFYING DIODES • 200V % 400V S-200-r jFR • 170A 7 - i • trr^ 0 .5 /iS FEATURES • £ * & (Ta = 25‘C Characteristics(Ta=25,C, unless otherwise specified) m Electrical characteristics Hi » # - 5 5 - + 150 s Tstg °C —55— h 150
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S-200-1"
S-200-02FR
S-200-04FR
50HzIESÂ
OF-O517^
50HziE3Â
M20XPI
5X3S30
M20XPI
250ty-cm
jis H4100
a6063
S-200-04FR
A6063S-T
A6063S
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M1F60
Abstract: No abstract text available
Text: Rectifier Diode Surface Mounting Device Single Diode •*W fN -äsH OUTLINE DIMENSIONS Package : M1F Unit : mm M 1 F 800V 1A + - — N— 2 .8 101 it V — F t - 9 Cathode mark 45 £1 B64 l!i|P "3 7 ? ° 00 wmm «T 116 2 n y HB-g- W Type No. Date code
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OCR Scan
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PDF
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M1F60
M1F80
50HzJE®
20/im
35/jm
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tc122 25 9
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode •¿m u OUTLINE SF15SC6 60 V 15 A Feature • Tj=150°C • Tj=150t: • P rr s m T l K r j y i s x f ä M . •¡fg *» Œ 2kV SII • P r r s m Rating • Full M olded • Dielectric Strength 2kV Main Use • 7 • DC/DC oyjt—?
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SF15SC6
tc122 25 9
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DIODE N7
Abstract: B20s
Text: -j'j vvv'ds-v 7:n.7,ii>'fy:ÿ'fy§ë. Bridge Diode Dual In-Line Package •*WfN-äsH OUTLINE DIMENSIONS S1YB 600V 0.4A 43 f i • /j\iU D ip y v " ^ ir - y • B Ä ttic ffin s fllS tt « a ± * n îE o w c B , m e m m *z m m < rc -£ u MMfàM RATINGS
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J514-5
DIODE N7
B20s
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S2V40
Abstract: S2V10 S2V60
Text: SHINDENGEN ELECTRIC MFG SHE D • 021^307 0000S43 513 « S H E J ■ O U T L IN E D IM E N S IO N S S2VD D ■Cathode • Anode 600V 1.7A o— W — o B ro w n Red Yellow B lu e : : * : S2V10 S2 V2 0 S2 V4 0 S2V60 U nit ' mm W eight ' 0.69g ■ Æ fê ü
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0000S43
S2V10
S2V60
S2V10
S2V20
S2V40
S2V60
Ta--40
150CJ
S2V40
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Untitled
Abstract: No abstract text available
Text: S IL IC O N D IO D E -B R ID G E S • 200V S201MN 2 B I 0R I5I N E L E C T R I C CO LTD >4#A I . S aS ^U - K 3£ 0 1 .4 c n t z s b ^ i j > SflE ]> • bfll307M Q O Q O O M b STT h 2 . -y -is w > ? n M m & 4 s o ► ►3e:*& I. x -f 2 . -€• c o -ffe 'B S S ijfE ffl „
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S201MN
S201MN2
300Gx3tCufrXf
50HzIESÂ
I-150
3X300X
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