IXGK50N60A2D1
Abstract: No abstract text available
Text: Advance Technical Data IGBT with Diode 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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IXGK50N60A2D1
50N60A2D1
IC110
IF110
50N60B2D1
O-264
PLUS247
405B2
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Untitled
Abstract: No abstract text available
Text: Advance Technical Data IGBT with Diode IXGK 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES
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Original
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50N60A2D1
IC110
O-264
IF110
50N60B2D1
PLUS247
405B2
50N60A2D1
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PDF
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50n60
Abstract: 50N60A IF110 PLUS247
Text: Advance Technical Data IGBT with Diode IXGK 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES
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Original
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50N60A2D1
IC110
IF110
50N60B2D1
O-264
405B2
50N60A2D1
50n60
50N60A
IF110
PLUS247
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PDF
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50N60A
Abstract: IF110 PLUS247 IXGX50N60A2U1
Text: Advance Technical Information IGBT with Diode IXGK 50N60A2U1 VCES IXGX 50N60A2U1 IC25 VCE sat Low Saturation Voltage IGBT with Low Forward Drop Diode = 600 V = 75 A = 1.6 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C
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50N60A2U1
IC110
IF110
50N60A2D1
50N60A2U1
50N60A
IF110
PLUS247
IXGX50N60A2U1
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PDF
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