Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    50N120A Search Results

    SF Impression Pixel

    50N120A Price and Stock

    Hatch Lighting LC10-0350N-120-A

    LED Power Supplies LED Power Supplies, 10W, 120VAC, 350mA, 8V-30VDC, Constant Current, Non Dimming
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LC10-0350N-120-A
    • 1 -
    • 10 -
    • 100 -
    • 1000 $13.97
    • 10000 $13.97
    		Get Quote

    50N120A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    50N120AU1 IXYS High Voltage IGBT With Diode, Short Circuit SOA Capability Original PDF

    50N120A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXLN50N120A

    Abstract: No abstract text available
    Text: IGBT IXLN 50N120A VCES IC25 VCE sat = 1200 V = 80 A = 3.4 V High Short Circuit SOA Capability Preliminary data E Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1200 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V Transient


    Original     		50N120A IXLN50N120A PDF

    50N120AU1

    Abstract: IXDN 50N120AU1 IXDN50N120AU1 V50017
    Text: High Voltage IGBT with Diode IXDN 50N120AU1 C Short Circuit SOA Capability VCES = 1200 V IC25 = 70 A VCE sat typ = 2.5 V G Preliminary Data E E Maximum Ratings miniBLOC, SOT-227 B E153432 Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		50N120AU1 OT-227 E153432 50N120AU1 IXDN 50N120AU1 IXDN50N120AU1 V50017 PDF

    Untitled

    Abstract: No abstract text available
    Text: r IXLN 50N120A IGBT VCES I C25 V CE sat = 1200 V = 80 A = 3.4 V High Short Circuit SOA Capability ?c G r 1 c m 1 mi ic u y u c u a È T ' e Maximum Ratings Symbol Test Conditions V CES Tj V CGR T, = 25°C to 150°C; RGE = 1 M ii V GES 1200 V 1200 V Continuous


    OCR Scan     		50N120A 4bab22b PDF

    IXLN50N120A

    Abstract: No abstract text available
    Text: OIXYS IGBT IXLN 50N120A v¥ ces ^C25 vv CE sat = 1200 V = 80 A = 3.4 V High Short Circuit SOA Capability Preliminary data ° Symbol Test C onditions Maximum Ratings v CES ^ V CGR T,J = 25°C to 150°C; Rrc = 1 M ii Cat V GES 1200 V 1200 V Continuous +20 V


    OCR Scan     		50N120A OT-227 IXLN50N120A PDF

    jvv diode

    Abstract: IXDN 50N120AU1 50N120AU1 IXDN50N120AU1 0504N
    Text: □ IXYS High Voltage IGBT with Diode IXDN 50N120AU1 V CES 1200 V ^C25 70 A V CE sat typ 2.5 V Short Circuit SOA Capability Preliminary Data Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 1200 V V CGR Td = 25°C to 150°C; RGE = 1 M£i


    OCR Scan     		50N120AU1 OT-227 jvv diode IXDN 50N120AU1 IXDN50N120AU1 0504N PDF

    IXBH 40N160

    Abstract: 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1
    Text: NPT Insulated Gate Bipolar Transistors IGBT D series (SCSOA) V T = 1 5 0 °C ► New V ► IXDP 20N60B 600 v CE(aal) c lM typ. typ. Tc - 25°C Tc = 90°C A A ► IXDP 35N60B ► IXDH 35N60B ► IXDA 20N120A 'c •c CES PF 21 2.0 800 58 40 2.0 ^ 1600 □


    OCR Scan     		20N60B 35N60B 20N120A 20N120 30N120 75N120A T0-220 9N140 9N160 IXBH 40N160 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1 PDF

    8n80

    Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
    Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1


    OCR Scan     		CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B PDF

    40N60A

    Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A
    Text: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A


    OCR Scan     		2N100 30N60 40N60 25N100 45N100 45N120 2N100A 10N60A 24N60A 30N6QA 40N60A G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A PDF

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50 PDF

    b14 smd diode

    Abstract: B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60
    Text: XYS SCSOAIGBT S-Serles / D-Sertee Contents IGBT v C ES max T0-220 V* CEIsatl IXGP max Tc = 25 °C Tc = 25 “C •c TO-263 (IXGA) TO-247 . TO-247 SMD/.S* T0-204 miniBLOC Page ♦ * V A V 600 16 16 1.8 1.8 48 50 75 2.2 2.5 2.5 IXSH 24N60 iXSH 30N60 IXSH 40N60


    OCR Scan     		T0-220 O-263 O-247 O-247 T0-204 24N60 30N60 40N60 25N100 45N100 b14 smd diode B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60 PDF