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    50N06 Search Results

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    50N06 Price and Stock

    Vishay Siliconix SQD50N06-09L_GE3

    MOSFET N-CH 60V 50A TO252
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    DigiKey SQD50N06-09L_GE3 Cut Tape 4,210 1
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    SQD50N06-09L_GE3 Digi-Reel 4,210 1
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    SQD50N06-09L_GE3 Reel 2,000 2,000
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    New Advantage Corporation SQD50N06-09L_GE3 4,000 1
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    Goford Semiconductor G350N06D32

    MOSFET 2N-CH 60V 10A 8DFN
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    DigiKey G350N06D32 Digi-Reel 3,077 1
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    G350N06D32 Cut Tape 3,077 1
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    Infineon Technologies AG IPD50N06S214ATMA2

    MOSFET N-CH 55V 50A TO252-31
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    DigiKey IPD50N06S214ATMA2 Reel 2,500 2,500
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    Avnet Americas IPD50N06S214ATMA2 Reel 12 Weeks 2,500
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    Mouser Electronics IPD50N06S214ATMA2 1,931
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    Newark IPD50N06S214ATMA2 Cut Tape 4,419 1
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    Chip1Stop IPD50N06S214ATMA2 Cut Tape 2,500
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    EBV Elektronik IPD50N06S214ATMA2 13 Weeks 2,500
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    Infineon Technologies AG IPD50N06S2L13ATMA2

    MOSFET N-CH 55V 50A TO252-31
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    DigiKey IPD50N06S2L13ATMA2 Reel 2,500 2,500
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    Avnet Americas IPD50N06S2L13ATMA2 Reel 12 Weeks 2,500
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    IPD50N06S2L13ATMA2 Reel 12 Weeks 2,500
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    Mouser Electronics IPD50N06S2L13ATMA2 30,990
    • 1 $1.65
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    • 100 $0.843
    • 1000 $0.638
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    Newark IPD50N06S2L13ATMA2 Cut Tape 8,706 5
    • 1 $1.57
    • 10 $1.25
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    • 1000 $0.751
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    IPD50N06S2L13ATMA2 Reel 2,500
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    Chip1Stop IPD50N06S2L13ATMA2 Cut Tape 2,440
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    EBV Elektronik IPD50N06S2L13ATMA2 13 Weeks 2,500
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    Diotec Semiconductor AG DI050N06D1-AQ

    MOSFET DPAK N 60V 50A 0.0085OHM
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    DigiKey DI050N06D1-AQ Digi-Reel 2,475 1
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    DI050N06D1-AQ Cut Tape 2,475 1
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    • 10 $0.649
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    Newark DI050N06D1-AQ Cut Tape 1
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    TME DI050N06D1-AQ 1
    • 1 $0.779
    • 10 $0.474
    • 100 $0.377
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    Find more 50N06 price and stock on Findchips.com

    50N06 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    50N06 Unisonic Technologies 50 Amps, 60 Volts N-CHANNEL POWER MOSFET Original PDF
    50N06 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    50N06 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    50N06LE Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    50N06LE Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    50N06L-X-TA3-T Unisonic Technologies 50 Amps, 60 Volts N-CHANNEL POWER MOSFET Original PDF
    50N06-TA3-T Unisonic Technologies 50 Amps, 60 Volts N-CHANNEL POWER MOSFET Original PDF
    50N06-TF3-T Unisonic Technologies 50 Amps, 60 Volts N-CHANNEL POWER MOSFET Original PDF

    50N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    50N60

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 1  DESCRIPTION TO-263 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		PDF 50N06 O-263 50N06 O-220 O-251 O-220F QW-R502-088 50N60

    mosfet 50a 25v to 252

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 TO-263  DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		PDF 50N06 O-263 50N06 O-251 O-220 O-220F QW-R502-088 mosfet 50a 25v to 252

    50N06 to 252

    Abstract: MOSFET 50N06 50n06l 50N06 50N06 E 50N60L-TM3-T 50n06 to-252 50N06L-TF3-T 50N60G-TM3-T power MOSFET 50n06
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		PDF 50N06 O-252 50N06 O-251 O-220 O-220F QW-R502-088 50N06 to 252 MOSFET 50N06 50n06l 50N06 E 50N60L-TM3-T 50n06 to-252 50N06L-TF3-T 50N60G-TM3-T power MOSFET 50n06

    50n06

    Abstract: MOSFET 50N06 50N06 to 252
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 1  DESCRIPTION TO-263 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		PDF 50N06 O-263 50N06 O-220 O-220F O-220F3 O-251 O-252 O-252D QW-R502-088 MOSFET 50N06 50N06 to 252

    50n06

    Abstract: MOSFET 50N06 Equivalent 50N06 50N06 DATASHEET p 50n06 power MOSFET 50n06 50N06-TF3-T 50N06LT TO-220 50n06 25V 1A power MOSFET TO-220
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		PDF 50N06 50N06 50N06L QW-R502-088 MOSFET 50N06 Equivalent 50N06 50N06 DATASHEET p 50n06 power MOSFET 50n06 50N06-TF3-T 50N06LT TO-220 50n06 25V 1A power MOSFET TO-220

    55NF06

    Abstract: P55NF06 P55nf*06 Mosfet P55NF06
    Text: 55NF06 Pb Free Plating Product 55NF06 Pb N-CHANNEL POWER MOSFET TRANSISTOR 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET „ 12 DESCRIPTION Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low


    Original     		PDF 55NF06 50N06 U55NF06 P55NF06 F55NF06 D55NF06 O-220/TO-220F 55NF06 P55NF06 P55nf*06 Mosfet P55NF06

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06-F Preliminary Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 50N06-F is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		PDF 50N06-F 50N06-F 50N06L-TN3-R 50N06G-TNat QW-R502-A83

    a50n06

    Abstract: 50n06 MOSFET 50N06 50N06LT Equivalent 50N06 50N06 DATASHEET 50N06L power MOSFET 50n06 50N06-TF3-T p 50n06
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		PDF 50N06 O-220 50N06 O-220F 50N06L QW-R502-088 a50n06 MOSFET 50N06 50N06LT Equivalent 50N06 50N06 DATASHEET 50N06L power MOSFET 50n06 50N06-TF3-T p 50n06

    50N06

    Abstract: MOSFET 50N06 50N06 DATASHEET 50N06 E 50N06 E DATASHEET
    Text: E 50N06 HEXFET Dynamic dv/dt Rating 175 ْC Operating Temperature Fast switching Ease of Paralleling Simple Drive Requirements Power MOSFET VDSS = 60V ID25 = 50A RDS ON = 0.022Ω Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		PDF 50N06 O-220 50watts. 25IAS ISD51A di/dt250A/S TJ175 width300S; 50N06 MOSFET 50N06 50N06 DATASHEET 50N06 E 50N06 E DATASHEET

    Equivalent 50N06

    Abstract: MOSFET 50N06 50n06 TO-252 50n06 50N06L 60V 2A MOSFET N-channel 50N06LT 50N06 DATASHEET mosfet driver L038
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		PDF 50N06 50N06 QW-R502-088 Equivalent 50N06 MOSFET 50N06 TO-252 50n06 50N06L 60V 2A MOSFET N-channel 50N06LT 50N06 DATASHEET mosfet driver L038

    Equivalent 50N06

    Abstract: MOSFET 50N06 po345 50N06 rfp50n06 equivalent 50N06 DATASHEET AN9664 HIP6002 HIP6003 RFP70N03
    Text: A Pentium Pro Voltage Regulator Module VRM Using the HIP6003 PWM Controller Application Note December 1996 AN9664 Introduction HIP6003EVAL1 Reference Design Today’s high-performance microprocessors, such as the Intel Pentium Pro, present many challenges to their power


    Original     		PDF HIP6003 AN9664 HIP6003EVAL1 Equivalent 50N06 MOSFET 50N06 po345 50N06 rfp50n06 equivalent 50N06 DATASHEET AN9664 HIP6002 RFP70N03

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    fp50n06

    Abstract: F50N06LE FP50N06L FG50N06L RF1S50N06LE RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
    Text: 50N06LE, 50N06LE, 50N06LE, 50N06LESM S E M I C O N D U C T O R 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features • • • • • • • Packages JEDEC STYLE TO-247 50A, 60V rDS ON = 0.022Ω


    Original     		PDF RFG50N06LE, RFP50N06LE, RF1S50N06LE, RF1S50N06LESM O-247 175oC RF1S50N06LESM fp50n06 F50N06LE FP50N06L FG50N06L RF1S50N06LE RF1S50N06LESM9A RFG50N06LE RFP50N06LE

    toy helicopter remote control circuit diagram

    Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter
    Text: Infineon Solutions for Transportation 24 V, Leisure Vehicles and Small Electrical Carts [ www.infineon.com ] 2 Contents Introduction 04 Application Segments 06 Trucks 08 Leisure Vehicles 10 Electrical Vehicles 12 Products Microcontrollers 14 Automotive Power


    Original     		PDF B192-H9213-X-X-7600 toy helicopter remote control circuit diagram TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter

    Equivalent 50N06

    Abstract: MOSFET 50N06 50N06 50n06 similar schematic diagram converter 12v to 24v 70N03 AN9664 HIP6002 HIP6003 MBR1535CT
    Text: A Pentium Pro Voltage Regulator Module VRM Using the HIP6003 PWM Controller Application Note December 1996 AN9664 Introduction HIP6003EVAL1 Reference Design Today’s high-performance microprocessors, such as the Intel Pentium Pro, present many challenges to their power


    Original     		PDF HIP6003 AN9664 HIP6003EVAL1 Equivalent 50N06 MOSFET 50N06 50N06 50n06 similar schematic diagram converter 12v to 24v 70N03 AN9664 HIP6002 MBR1535CT

    fp50n06

    Abstract: c 4072 TA49164 F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
    Text: 50N06LE, 50N06LE, 50N06LESM Data Sheet October 1999 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs File Number 4072.3 Features • 50A, 60V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process


    Original     		PDF RFG50N06LE, RFP50N06LE, RF1S50N06LESM fp50n06 c 4072 TA49164 F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE

    fp50n06

    Abstract: 50n06l 50N06LE F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
    Text: 50N06LE, 50N06LE, 50N06LESM Data Sheet Title FG5 06L P50 6LE 1S5 06L M bt A, V, 22 m, gic vel anwer OSTs) utho October 1999 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs Features These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process


    Original     		PDF RFG50N06LE, RFP50N06LE, RF1S50N06LESM fp50n06 50n06l 50N06LE F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE

    optimos battery protection reverse

    Abstract: 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package
    Text: 21/9/04 15.23 Página 2 Product Information 2004 INFINEON TECHNOLOGIES Automotive MOSFET Green and Robust Package I N O R D E R T O cope with the new RoHS Restricting the use of Hazardous Automotive MOSFET Substances and WEEE (Waste Electronic and Electrical Equipment) regulations the


    Original     		PDF FIN-02601 100P03P3L-04 P-TO220-3 P-TO262-3 P-TO252-3 P-TO263-3 O-263-7) P-TO263-7 P-TO220-7 optimos battery protection reverse 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package

    TLE7201

    Abstract: BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519
    Text: Automotive Power Selection Guide Ultimate POWER – Perfect Control CO M P L E T E A u t o m o t i v e S o l u t i o ns f r o m I n f i n e o n www.infineon.com/power Never stop thinking. Introduction Power and Control – a Successful Combination D O Y O U N E E D to control more power? With increasing accuracy? Do


    Original     		PDF B112-H6731-G12-X-7600 TLE7201 BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519

    50N05

    Abstract: OM60N06SA OM50N05SA OM50N05ST OM50N06SA OM50N06ST OM60N05SA
    Text: OM60N06SA OM60N05SA 50N06ST 50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDS(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages


    Original     		PDF OM60N06SA OM60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST O-257 O-254 MIL-S-19500, 50N05 OM50N05ST OM50N06ST

    50N06LE

    Abstract: No abstract text available
    Text: J W S S em icon du cto r 50N06LE, 50N06LE, 50N06LESM I April 1999 Data Sheet 50A, 60V, 0.022 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs Features • 50A,60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFG50N06LE, RFP50N06LE, RF1S50N06LESM TA49164. 022i2 50e-4 53e-6) 54e-3 21e-6) 50N06LE

    50n06

    Abstract: No abstract text available
    Text: OM60N06SA OM60N05SA 50N06ST 50N06SA QM50N05SA QM50N05ST LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDs(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages


    OCR Scan     		PDF OM60N06SA OM60N05SA OM50N06ST OM50N06SA QM50N05SA QM50N05ST O-257 O-254 MIL-S-19500, 50n06

    fp50n06

    Abstract: F50N06LE 50N06LE rfp50n06 T0-262AA
    Text: U A D D ic 50N06LE. 50N06LE, 50N06LE, 50N06LESM 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs juiy 1996 Features Packages JEDEC STYLE TO-247 • 50A,60V • rDS ON =0.022i2 • • • • • SOURCE


    OCR Scan     		PDF RFG50N06LE. RFP50N06LE, RF1S50N06LE, RF1S50N06LESM O-247 022i2 RFG50N06LE, RF1S50N06LESM fp50n06 F50N06LE 50N06LE rfp50n06 T0-262AA

    50n05

    Abstract: SMP50N05 SMP60N05 s0n06 smp60n06 60n05 SMP50N06 60N06 50n06 siliconix SMP50N06-18
    Text: lêE I SILICONIX INC <MmW C rS • 8254735 0014173 7 ■ SMP60N06/05, 50N06/05 ilì c o n ix in c o rp o ra te d N-Channel Enhancement Mode Transistors TO-220AB TOP VIEW PRODUCT SUMMARY o PART NUMBER V BRJDSS SMP60N06 60 0.023 60 SMP60N05 50 0.023 60 50N06


    OCR Scan     		PDF 25473S GQ14T73 SMP60N06/05, SMP50N06/05 SMP60N06 SMP60N05 SMP50N06 SMP50N05 O-220AB 60N06 50n05 s0n06 60n05 50n06 siliconix SMP50N06-18