HP V601
Abstract: DS-35-PC1 synopsys Platform Architect DataSheet who are XCell s competitors XC4000 XC4000E XC4000EX XC4013E XC4025 XC5200
Text: Continued on page 5 Customer w/v6.0 will receive v6.0.1 update Includes 502/550/380 Includes 502/550/380 & Foundry Includes support for XC4000E and XC9500 Includes support for XC4000E and XC9500 Includes support for XC4000E and XC9500 Includes support for XC4000E and XC9500
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XC4000E
XC9500
HP V601
DS-35-PC1
synopsys Platform Architect DataSheet
who are XCell s competitors
XC4000
XC4000EX
XC4013E
XC4025
XC5200
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HI-SH77
Abstract: LTI086CT-3 CXA1645 HD64411 HD64411F ADPCM NEC CD-ROM pin diagram circuit diagram of speech to text, altera 17AE-23090A-9750 SYM53CF96-2
Text: SH Graphics/Speech Processing Demonstration System NAV-DS4 Application Note ADE-502-058 Rev. 1.0 Preliminary 11/25/99 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.
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ADE-502-058
HI-SH77
LTI086CT-3
CXA1645
HD64411
HD64411F
ADPCM NEC
CD-ROM pin diagram
circuit diagram of speech to text, altera
17AE-23090A-9750
SYM53CF96-2
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MT9V403C12STC
Abstract: Photodetector Sensor c705
Text: MT9V403 - 1/2-Inch VGA Digital Image Sensor Features 1/2-Inch VGA with Freeze-Frame CMOS Image Sensor MT9V403 For the latest data sheet revision, please refer to Micron’s Web site: www.micron.com/imaging Features Table 1: • Output: 10-bit digital through a single port
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MT9V403
MT9V403
10-bit
MT9V403C12STC"
MT9V403C12STC
Photodetector Sensor
c705
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P-TFBGA63-0813-0
Abstract: TC58NYM9S3EBAI3
Text: TC58NYM9S3EBAI3 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYM9S3E is a single 1.8V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.
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TC58NYM9S3EBAI3
TC58NYM9S3E
512Mbit
128bits)
512blocks.
2112-byte
011-03-01A
P-TFBGA63-0813-0
TC58NYM9S3EBAI3
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Untitled
Abstract: No abstract text available
Text: TC58NYM9S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYM9S3E is a single 1.8V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 64) bytes 64 pages 512blocks.
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TC58NYM9S3EBAI4
TC58NYM9S3E
512Mbit
128bits)
512blocks.
2112-byte
012-09-01A
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TC58NVM9S3ETAI0
Abstract: No abstract text available
Text: TC58NVM9S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVM9S3E is a single 3.3V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.
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TC58NVM9S3ETAI0
TC58NVM9S3E
512Mbit
128bits)
512blocks.
2112-byte
012-09-01A
TC58NVM9S3ETAI0
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Untitled
Abstract: No abstract text available
Text: TC58NYM9S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYM9S3E is a single 1.8V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.
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TC58NYM9S3ETA00
TC58NYM9S3E
512Mbit
128bits)
512blocks.
2112-byte
011-03-01A
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TC58NVM9S3ETA00
Abstract: TC58NVM9S3Et TC58NVM9S3E DIN2111 PA12 PA13 TC58NVM9S3
Text: TC58NVM9S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVM9S3E is a single 3.3V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.
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TC58NVM9S3ETA00
TC58NVM9S3E
512Mbit
128bits)
512blocks.
2112-byte
011-03-01A
TC58NVM9S3ETA00
TC58NVM9S3Et
DIN2111
PA12
PA13
TC58NVM9S3
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toshiba NAND page size 2112
Abstract: Toshiba confidential NAND toshiba nand plane size
Text: TC58NVM9S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVM9S3E is a single 3.3V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.
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TC58NVM9S3ETA00
TC58NVM9S3E
512Mbit
128bits)
512blocks.
2112-byte
012-09-01A
toshiba NAND page size 2112
Toshiba confidential NAND
toshiba nand plane size
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TC58NVM9S3E
Abstract: TC58NVM9S3ETA00 DIN2111 PA12 PA13 TC58NVM9S3
Text: TC58NVM9S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVM9S3E is a single 3.3V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.
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TC58NVM9S3ETA00
TC58NVM9S3E
512Mbit
128bits)
512blocks.
2112-byte
010-05-21A
TC58NVM9S3ETA00
DIN2111
PA12
PA13
TC58NVM9S3
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TC58NVM9S3EBAI4
Abstract: P-TFBGA63 TC58NVM9S3
Text: TC58NVM9S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVM9S3E is a single 3.3V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.
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TC58NVM9S3EBAI4
TC58NVM9S3E
512Mbit
128bits)
512blocks.
2112-byte
012-09-01A
TC58NVM9S3EBAI4
P-TFBGA63
TC58NVM9S3
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TSOP 48 Pattern
Abstract: TC58NVM9S3E
Text: TC58NVM9S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVM9S3E is a single 3.3V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.
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TC58NVM9S3ETAI0
TC58NVM9S3E
512Mbit
128bits)
512blocks.
2112-byte
011-03-01A
TSOP 48 Pattern
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TC58NYM9S3ETA00
Abstract: No abstract text available
Text: TC58NYM9S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYM9S3E is a single 1.8V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.
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TC58NYM9S3ETA00
TC58NYM9S3E
512Mbit
128bits)
512blocks.
2112-byte
011-03-01A
TC58NYM9S3ETA00
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TC58NVM9S3E
Abstract: TC58NVM9S3 TC58NVM9S3EBAI3 0030FF
Text: TC58NVM9S3EBAI3 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVM9S3E is a single 3.3V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.
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TC58NVM9S3EBAI3
TC58NVM9S3E
512Mbit
128bits)
512blocks.
2112-byte
011-03-01A
TC58NVM9S3
TC58NVM9S3EBAI3
0030FF
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Untitled
Abstract: No abstract text available
Text: TC58NYM9S3EBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYM9S3E is a single 1.8V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.
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TC58NYM9S3EBAI6
TC58NYM9S3E
512Mbit
128bits)
512blocks.
2112-byte
012-08-01A
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Untitled
Abstract: No abstract text available
Text: TC58NVM9S3EBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVM9S3E is a single 3.3V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.
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TC58NVM9S3EBAI6
TC58NVM9S3E
512Mbit
128bits)
512blocks.
2112-byte
012-08-01A
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Untitled
Abstract: No abstract text available
Text: TC58NYM9S3EBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYM9S3E is a single 1.8V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.
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TC58NYM9S3EBAI6
TC58NYM9S3E
512Mbit
128bits)
512blocks.
2112-byte
012-08-01A
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SDHC specification
Abstract: microsdhc TOSHIBA roadmap samsung microsd card USB Toshiba TransMemory 5252 S 64 gb usb 438B microsd specification Toshiba NOR FLASH
Text: 2008-9 PRODUCT GUIDE NAND Flash Storage s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g NAND Flash Storage Easy to carry and use and fitted for various digital gadgets ▼ • SD and SDHC Memory Cards Suitable for a wide variety of digital gadgets
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BCE0005I
E-28831
BCE0005J
SDHC specification
microsdhc
TOSHIBA roadmap
samsung microsd card
USB Toshiba TransMemory
5252 S
64 gb usb
438B
microsd specification
Toshiba NOR FLASH
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NM29N16S
Abstract: C1996 ICC01 NM29N16 NM29N16R
Text: NM29N16 16 MBit 2M x 8 Bit CMOS NAND FLASH E2PROM General Description Features The NM29N16 is a 16 Mbit (2 Mbyte) NAND FLASH The device is organized as an array of 512 blocks each consisting of 16 pages Each page contains 264 bytes All commands and data are sent through eight I O pins To read
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NM29N16
NM29N16
NM29N16S
C1996
ICC01
NM29N16R
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NM29N16ES
Abstract: C1996 ICC01 NM29N16E
Text: NM29N16E 16 MBit 2M x 8 Bit CMOS NAND FLASH E2PROM General Description Features The NM29N16E is a 16 Mbit (2 Mbyte) NAND FLASH which operates over the industrial (b40 C to a 85 C) temperature range The device is organized as an array of 512 blocks each consisting of 16 pages Each page contains 264 bytes
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NM29N16E
NM29N16E
NM29N16ES
C1996
ICC01
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TC5816AFT
Abstract: tc5816ft TC5816 toshiba NAND ID code TSOP44-P-400B nv16 NAND memory nand toshiba reference
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816AFT PRELIMINARY 16Mbit 2M x 8 BIT CMOS NAND EEPROM Description The TC5816 is a 5 volt 16M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) with a spare 64k x 8 bits. This device is organized as 264 bytes x 16 pages x 512 blocks. The device has a 264 byte static register which allows
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TC5816AFT
16Mbit
TC5816
NV16010196
TSOP44-P-400B
TC5816AFT
tc5816ft
toshiba NAND ID code
TSOP44-P-400B
nv16
NAND memory
nand toshiba reference
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TC5029BP
Abstract: positive negative power
Text: TC5029BP TC5029BP C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC QUAD 2-INPUT NAND GATE WITH N-CHANNEL OPEN DRAIN OUTPUT TC5029BP contains four circuits of 2 input NAND gates having its respective outputs of N-channel open drain structure. Since the drain voltage of output transistors are
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TC5029BP
TC5029BP
10Kfi
50kHz,
positive negative power
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Untitled
Abstract: No abstract text available
Text: 54S133 Signetics Gate 13-lnput NAND Gate Product Specification Military Logic Products FUNCTION TABLE ORDERING INFORMATION DESCRIPTION ORDER CODE INPUTS OUTPUT A.M y Ceramic DIP H . .H one input = L L H Ceramic Flat Pack 54S133BFA Ceramic LLCC 54S133/B2A
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54S133
13-lnput
54S133/BEA
54S133BFA
54S133/B2A
10SUL
500ns
54SXXX
1N916
1N3064,
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Untitled
Abstract: No abstract text available
Text: C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC5029BP TC5029BP QUAD 2-INPUT NAND GATE WITH N-CHANNEL OPEN DRAIN OUTPUT TC502 9 B P contains four circuits of 2 input N A N D gates h a v i n g its r e s p e c t i v e outputs of N - c h a n n e l o p en drain
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TC5029BP
TC502
ABSO230
50kHz,
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