501N16 Search Results

501N16 Price and Stock

Filter by Manufacturer


Belden Inc C501N16007 PATCHCORD BCAT5E CMR LTBL 7FT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C501N16007	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Belden Inc C501N16004 PATCHCORD BCAT5E CMR LTBL 4FT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C501N16004	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Belden Inc C501N16002 PATCHCORD BCAT5E CMR LTBL 2FT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C501N16002	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Belden Inc C501N16010 PATCHCORD BCAT5E CMR LTBL 10FT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C501N16010	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Glenair Inc G1501N168A2A ADAPTER - Bulk (Alt: G1501N168A2A)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	G1501N168A2A	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more 501N16 price and stock on Findchips.com

501N16 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
501N16		Directed Energy	DE-SERIES FAST POWER MOSFET		Original	PDF

501N16 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.	Original	PDF	DE275X2-501N16A DE275X2-501N16A
DE275X2-501N16A Abstract: No abstract text available Text: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-501N16A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in	Original	PDF	DE275X2-501N16A DE275X2-501N16A
DE275X2-501N16A Abstract: "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2 Text: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.	Original	PDF	DE275X2-501N16A DE275X2-501N16A "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2
DE275-102N06A Abstract: DE375-102N10A DE375-501N16A Text: RF Power MOSFETs VDSS ID25 RDS on max V 500 TC = 25 °C A 16 Ω 0.5 DE375-501N16A 1000 6 2.0 DE275-102N06A 10 1.2 DE375-102N10A Part Number Note: These part types are available from Directed Energy, Inc.	Original	PDF	DE375-501N16A DE275-102N06A DE375-102N10A DE275-102N06A DE375-102N10A DE375-501N16A
DE275-501N16A Abstract: 92-0002 DE275-501N16 Text: Directed Energy, Inc. An DE275-501N16A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	DE275-501N16A DE275-501N16A 92-0002 DE275-501N16
DE275-501N16A Abstract: 501N16A gsm Handset Circuit Diagram PIN diode SPICE model Text: DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500	Original	PDF	DE275-501N16A DE275-501N16A 501N16A gsm Handset Circuit Diagram PIN diode SPICE model
DE275-501N16A Abstract: KP58 Text: DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient	Original	PDF	DE275-501N16A DE275-501N16A KP58
501N16 Abstract: DE-275 Text: PRELIMINARY SPECIFICATIONS DE-275 501N16 16A, 500V, 0.5Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com	Original	PDF	DE-275 501N16 150oC 501N16
DE375-501N16A Abstract: No abstract text available Text: Directed Energy, Inc. An DE375-501N16A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500	Original	PDF	DE375-501N16A DE375-501N16A
high power rf 10kW Abstract: HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w DE-150 3RH1140-1AD00 101N30 102N02 Text: T H E P U L S E O F T H E F U T U R E DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 Series are the lowest power devices in the DE-Series family. However, their speed and frequency are the highest. The upper operational frequency of the DE-150 Series is approximately 110MHz. The switching speed of the device family is on the order	Original	PDF	DE-150 DE-150 110MHz. DE-375X2 102N20 501N40 high power rf 10kW HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w 3RH1140-1AD00 101N30 102N02
501N04 Abstract: DE-275 101N30 5kw power amplifier amplifier 1000W 8 DE-375 101N09 DE-275 Directed Energy 101N30 102N05 Text: e DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 SERIES are the lowest power devices in the D E-SERIES family. However their speed and frequency are the highest. The upper operational frequency of the DE-150 SERIES is approximately 110MHz. The switching speed of the device	OCR Scan	PDF	DE-150 110MHz. 501N04 30MHz. DE-375 102N10 501N21 DE-275 101N30 5kw power amplifier amplifier 1000W 8 101N09 DE-275 Directed Energy 101N30 102N05