MT3S111TU
Abstract: No abstract text available
Text: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 3 R5 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: |S21e|2=12.5 dB typ. (@ f=1 GHz) 0.166±0.05
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MT3S111TU
MT3S111TU
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MT3S113
Abstract: transistor 2F to-236 4360A
Text: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking
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MT3S113
O-236
SC-59
MT3S113
transistor 2F to-236
4360A
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Untitled
Abstract: No abstract text available
Text: MT3S111P 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S111P ○ VHF～UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=0.95 dB 標準 (@ f=1 GHz) •
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MT3S111P
SC-62
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Untitled
Abstract: No abstract text available
Text: MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.95 dB typ. (@f=1 GHz) • High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz)
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MT3S111P
SC-62
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Untitled
Abstract: No abstract text available
Text: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking
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MT3S113
O-236
SC-59
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mt3s113p
Abstract: No abstract text available
Text: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking
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MT3S113P
SC-62
mt3s113p
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Untitled
Abstract: No abstract text available
Text: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF = 1.15dB typ. (@ f=1GHz) • High Gain:|S21e| = 10.5dB (typ.) (@ f=1GHz)
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MT3S113P
SC-62
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25c1815
Abstract: TGC1411 TGC1411-EPU DOUBLE FET
Text: Advance Product Information 0.3 - 10 GHz Downconverter TGC1411-EPU Key Features and Performance • • • • • • 0.25um pHEMT Technology 0.3-10 GHz RF/LO Frequency Range 0.15-2.5 GHz IF Frequency Range Nominal Conversion Gain of 12 dB Bias 3-5V @ 26 mA
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TGC1411-EPU
TGC1411-EPU
TGA1411
0007-inch
25c1815
TGC1411
DOUBLE FET
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Untitled
Abstract: No abstract text available
Text: MT3S113 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S113 ○ VHF～UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=1.15dB 標準 (@ f=1GHz) • 高利得です。:|S21e|2=11.8dB(標準) (@ f=1GHz)
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MT3S113
O-236
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Untitled
Abstract: No abstract text available
Text: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:|S21e| =12 dB (typ.) (@ f=1 GHz) 2 Marking
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MT3S111
O-236
SC-59
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MT3S113TU
Abstract: No abstract text available
Text: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 1.1. 2.2. 3.3. R7 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:|S21e|2=12.5dB Typ. (@ f=1GHz)
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MT3S113TU
MT3S113TU
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mmic core chip
Abstract: TGC1452-EPU 10GHz mixer
Text: Advance Product Information January 3, 2001 0.2 - 18 GHz Downconverter TGC1452-EPU Key Features and Performance • • • • • • 0.25um pHEMT Technology 0.2-18 GHz RF/LO Frequency Range DC-4 GHz IF Frequency Range Nominal Conversion Gain of 12 dB Bias 3-5V @ 17-24 mA
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TGC1452-EPU
TGC1452-EPU
501MHz,
TGC1452
0007-inch
mmic core chip
10GHz mixer
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Untitled
Abstract: No abstract text available
Text: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking
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MT3S111
O-236
SC-59
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Untitled
Abstract: No abstract text available
Text: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking
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MT3S113P
SC-62
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Untitled
Abstract: No abstract text available
Text: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Filter 576.0MHz Part No: MP04545 Model: TA1355A Rev No: 1 A. MAXIMUM RATING: Electrostatic Sensitive Device ESD 1. Input Power Level: 10dBm
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MP04545
TA1355A
10dBm
588MHz)
TA1355A
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Frequency Generator 500MHz
Abstract: LT5522
Text: DC651A DEMO BOARD QUICK START GUIDE Description: The DC651A demo circuit board is intended to demonstrate the capabilities of the LT5522 highsignal-level downconverting mixer IC for cable and CATV infrastructure applications. The LT5522 Figure 1 is a broadband high signal level active mixer optimized for high linearity
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DC651A
LT5522
LT5522
50ohm-matched
50ohms
-12dBm
1150MHz,
1151MHz.
Frequency Generator 500MHz
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vga splitter amplifier schematic
Abstract: schematic for vga splitter vga splitter schematic VGA Splitter block diagram transistor J1x AD8348-EVAL gilbert cell differential pair operational amplifier discrete schematic vga input schematic AD8348
Text: PRELIMINARY TECHNICAL DATA a 50–1000 MHz Quadrature Demodulator Preliminary Technical Data AD8348 Features Integrated I/Q demodulator with IF VGA Amplifier Operating IF Frequency 50–1000 MHz 3dB IF BW of 500MHz driven from Rs=200ohms Demodulation Bandwidth 60MHz
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AD8348
500MHz
200ohms)
60MHz
450MHz)
500MHz)
28-pin
28-Lead
vga splitter amplifier schematic
schematic for vga splitter
vga splitter schematic
VGA Splitter block diagram
transistor J1x
AD8348-EVAL
gilbert cell differential pair
operational amplifier discrete schematic
vga input schematic
AD8348
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Untitled
Abstract: No abstract text available
Text: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 3 2 1.1. Base 2.2. Emitter 3.3. Collector R7 1 1 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:|S21e|2=12.5dB Typ. (@ f=1GHz)
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MT3S113TU
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PSA2701T
Abstract: Twin 3.5mm mono jack plugs fm radio 3.5mm jack circuit diagram of bluetooth fm transmitter battery operated speaker diagram for mp3 audio am bluetooth advantages and disadvantages weigh scale calibration program circuit diagram of bluetooth headphone labview audio spectrum analyser Thurlby
Text: THURLBY THANDAR INSTRUMENTS PSA-T Series PSA1301T & PSA2701T Portable 1.3GHz and 2.7GHz RF Spectrum Analyzers Big on performance Small on size and cost PSA-T series RF Spectrum Analyzers Big on performance Small on size and cost The PSA-T series is an entirely new type of instrument.
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PSA1301T
PSA2701T
PSA1301T
PSA2701T
Twin 3.5mm mono jack plugs
fm radio 3.5mm jack
circuit diagram of bluetooth fm transmitter
battery operated speaker diagram for mp3 audio am
bluetooth advantages and disadvantages
weigh scale calibration program
circuit diagram of bluetooth headphone
labview audio spectrum analyser
Thurlby
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mt3s111
Abstract: No abstract text available
Text: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking
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MT3S111
O-236
SC-59
mt3s111
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Untitled
Abstract: No abstract text available
Text: MT3S113P 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S113P ○ VHF～UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=1.15dB 標準 (@ f=1GHz) • 高利得です。:|S21e|2=10.5dB(標準) (@ f=1GHz)
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MT3S113P
SC-62
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Untitled
Abstract: No abstract text available
Text: MT3S111TU 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S111TU ○ VHF～UHF 帯 低雑音・低歪み増幅用 単位: mm 2.1±0.1 3 1 2. エミッタ 3. コレクタ UFM JEDEC JEITA 東芝 2-2U1B 質量: 6.6 mg 標準
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MT3S111TU
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SD306DE
Abstract: SD306 SD304DE SD306CHP To206AF SD30 SD304 Topaz Semiconductor Topaz Semiconductor sd304
Text: TOPAZ SEMICONDUCTOR OSE D | "lOÖSaat, ÜO O l O a i 'ÏÏ’tMmmæ fl I SD304, SD306 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE DUAL ATE D-MOS FET ORDERING INFORMATION Sorted Chips in Waffle Pack TO-206AF TO-72 Package Shorting Rings SD304CHP SD304DE SD304DE/R
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OCR Scan
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T-31-25
sd304chp
sd306chp
O-206AF
sd304de
sd306de
sd304de/r
sd306de/r
SD306)
500MHz
SD306DE
SD306
SD306CHP
To206AF
SD30
SD304
Topaz Semiconductor
Topaz Semiconductor sd304
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK882 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK882 FM TUNER, VHF RF AM PLIFIER APPLICATIONS. U n it in mm 2.1 ± 0.1 • Low Reverse Transfer Capacitance : C rss = 0.025pF Typ. • Low Noise Fig u re : N F = 1.7dB (Typ.) •
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2SK882
025pF
501MHz
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