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    2SA1015

    Abstract: No abstract text available
    Text: I t i 50113Q 00M0S31 MBS I Consumer Series Consumer Series continued y ceo V EBO (V) Min (V) Min (V) Min TO-92 (92) 50 40 5 50 CS9015C TO-92 (92) 50 40 5 CS9016F TO-92 (92) 30 20 CS9016H TO-92 (92) 30 CS9018D TO-92 (92) CS9018F Device No. Case Style CS9014C


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    J111 national

    Abstract: J112 J113 25CC J111 MMBFJ111 MMBFJ112 MMBFJ113 MARK 6C SOT-23 k20a
    Text: S e m i c o n d u c t o r " J111 J112 J113 G MMBFJ111 MMBFJ112 MMBFJ113 T O -9 2 D M ark: 6 P / 6 R / 6 S N-Channel Switch T his device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Proce ss 51.


    OCR Scan     		PDF MMBFJ111 MMBFJ112 MMBFJ113 OT-23 D0M0T33 J111 national J112 J113 25CC J111 MMBFJ113 MARK 6C SOT-23 k20a

    dual P-CHANNEL 30V DS MOSFET

    Abstract: NDS8958 Dual N & P-Channel MOSFET
    Text: Na t t o n a l Semiconductor" July 1996 N D S8958 Dual N & P-Channel Enhancem ent M ode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDS8958 035fi b5D113D dual P-CHANNEL 30V DS MOSFET NDS8958 Dual N & P-Channel MOSFET