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    500V 11A Search Results

    500V 11A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    LBEE5XV2BZ-883 Murata Manufacturing Co Ltd Shielded Small Wi-Fi® 11a/b/g/n/ac/ax 2x2 MIMO + Bluetooth® 5.2 Module - CCATS N/A(self classification) Visit Murata Manufacturing Co Ltd
    LBEE5ZZ2XS-846 Murata Manufacturing Co Ltd Shielded Small Wi-Fi® 11a/b/g/n/ac/ax 2x2 MIMO + Bluetooth® 5.3 Module - CCATS N/A(self classification) Visit Murata Manufacturing Co Ltd
    DA14585-00VVDB-P Renesas Electronics Corporation SmartBond™ DA14585 Bluetooth Low Energy Pro Development Kit Daughterboard for the WLCSP-34 Package Visit Renesas Electronics Corporation
    H5N5006LSTL-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 3.5A 3000Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation

    500V 11A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FQPF*11n50cf

    Abstract: FQPF11N50 fqpf11n50cf FQP11N50CF
    Text: FRFET TM FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description • 11A, 500V, RDS on = 0.55Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP11N50CF/FQPF11N50CF FQP11N50CF/FQPF11N50CF FQPF*11n50cf FQPF11N50 fqpf11n50cf FQP11N50CF

    FQPF11N50CF

    Abstract: No abstract text available
    Text: FRFET TM FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description • 11A, 500V, RDS on = 0.55Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP11N50CF/FQPF11N50CF FQP11N50CF/FQPF11N50CF FQPF11N50CF

    FQPF*11n50cf

    Abstract: FQP11N50CF FQPF11N50CF FQP11N50
    Text: FRFET TM FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description • 11A, 500V, RDS on = 0.55Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP11N50CF/FQPF11N50CF FQP11N50CF/FQPF11N50CF FQPF*11n50cf FQP11N50CF FQPF11N50CF FQP11N50

    Untitled

    Abstract: No abstract text available
    Text: R5011FNX R5011FNX Datasheet Nch 500V 11A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.52W ID 11A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Fast reverse recovery time (trr). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.


    Original     		PDF R5011FNX O-220FM R5011FNX R1120A

    Untitled

    Abstract: No abstract text available
    Text: R5011FNX Nch 500V 11A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.52W ID 11A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Fast reverse recovery time (trr). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.


    Original     		PDF R5011FNX O-220FM R1120A

    Untitled

    Abstract: No abstract text available
    Text: R5011FNX Datasheet Nch 500V 11A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.52W ID 11A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Fast reverse recovery time (trr). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.


    Original     		PDF R5011FNX O-220FM R5011FNX R1120A

    Untitled

    Abstract: No abstract text available
    Text: R5011FNX Nch 500V 11A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.52W ID 11A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.


    Original     		PDF R5011FNX O-220FM R1120A

    R5011ANX

    Abstract: No abstract text available
    Text: R5011ANX Datasheet Nch 500V 11A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.5W ID 11A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF R5011ANX O-220FM R1120A R5011ANX

    Untitled

    Abstract: No abstract text available
    Text: KSM11N50CF/KSMF11N50CF 500V N-Channel MOSFET TO-220 TO-220F Features • 11A, 500V, RDS on = 0.55Ω @VGS = 10 V • Low Gate Charge (typical 43 nC) • Low Crss (typical 20pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • Fast Recovery Body Diode (typical 90ns)


    Original     		PDF KSM11N50CF/KSMF11N50CF O-220 O-220F

    transistor fda20n50

    Abstract: F109 FDA20N50
    Text: TM UniFET FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDA20N50 transistor fda20n50 F109

    FDA20

    Abstract: *20N50F
    Text: UniFET TM FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDA20N50 FDA20 *20N50F

    datasheet irfp460 mosfet

    Abstract: IRFP460 application irfp460 IRFP460 APPLICATION NOTE 5102 mosfet irfp460 data sheet power mosfet 500v 20a circuit TB334 irfp460 dc motor circuit
    Text: IRFP460 Data Sheet January 2002 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Features • 20A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFP460 TA17465. datasheet irfp460 mosfet IRFP460 application irfp460 IRFP460 APPLICATION NOTE 5102 mosfet irfp460 data sheet power mosfet 500v 20a circuit TB334 irfp460 dc motor circuit

    Untitled

    Abstract: No abstract text available
    Text: R5011FNJ Nch 500V 11A Power MOSFET Datasheet l Outline VDSS 500V RDS on (Max.) 0.52Ω ID ±11A PD 50W LPT(S) l Inner circuit l Features 1) Fast reverse recovery time (trr).


    Original     		PDF R5011FNJ

    IRF452

    Abstract: IRF453 IRF451 irf450
    Text: IRF450, IRF451, IRF452, IRF453 S E M I C O N D U C T O R 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 11A and 13A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF450, IRF451, IRF452, IRF453 TA17435. IRF452 IRF453 IRF451 irf450

    2E12

    Abstract: 3E12 FRK460D FRK460H FRK460R Rad Hard in Fairchild for MOSFET
    Text: FRK460D, FRK460R, FRK460H 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 17A, 500V, RDS on = 0.400Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK460D, FRK460R, FRK460H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 3E12 FRK460D FRK460H FRK460R Rad Hard in Fairchild for MOSFET

    2E12

    Abstract: 3E12 FRK460D FRK460H FRK460R
    Text: FRK460D, FRK460R, FRK460H 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 17A, 500V, RDS on = 0.400Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK460D, FRK460R, FRK460H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 3E12 FRK460D FRK460H FRK460R

    FDA20N50

    Abstract: No abstract text available
    Text: UniFET TM FDA20N50 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 45.6 nC)


    Original     		PDF FDA20N50 FDA20N50

    mosfet equivalent fda 59 n 30

    Abstract: FDA20N50
    Text: UniFET TM FDA20N50 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 45.6 nC)


    Original     		PDF FDA20N50 FDA20N50 mosfet equivalent fda 59 n 30

    FQPF9N50CF

    Abstract: FQPF*9n50cf FQPF9N50C
    Text: TM FRFET FQPF9N50CF 500V N-Channel MOSFET Features Description • 9A, 500V, RDS on = 0.85Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 28 nC)


    Original     		PDF FQPF9N50CF FQPF9N50CF FQPF*9n50cf FQPF9N50C

    Untitled

    Abstract: No abstract text available
    Text: FRK460D, FRK460R, FRK460H 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 17A, 500V, RDS on = 0.400Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK460D, FRK460R, FRK460H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD

    TA17465

    Abstract: RF4E20N50 power mosfet 500v 20a circuit A1025
    Text: RF4E20N50S Data Sheet 20A, 500V, 0.240 Ohm, N-Channel Power MOSFETs May 2002 Features • 20A, 500V [ /Title These are N-Channel enhancement mode silicon gate • rDS ON = 0.240Ω (HUF75 power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated


    Original     		PDF RF4E20N50S HUF75 337G3, HUF753 TB334 RF4E20N50S O-268 RF4E20N50ST TA17465 RF4E20N50 power mosfet 500v 20a circuit A1025

    irf450

    Abstract: diode F451 IRF452 IRF451
    Text: iH A R R is SEUIC0NDUCT0R IRF450, IRF451, IRF452, IRF453 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 11A and 13A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF450, IRF451, IRF452, IRF453 TB334 RF452, irf450 diode F451 IRF452 IRF451

    IRF452

    Abstract: IRF450 IRF451 irf453
    Text: h a f r r is IRF450, IRF451, IRF452, IRF453 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 11A and 13A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRF450, IRF451, IRF452, IRF453 TA17435. RF452, IRF452 IRF450 IRF451 irf453

    Untitled

    Abstract: No abstract text available
    Text: FRK460D, FRK460R, FRK460H 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 17A, 500V, RDS on = 0.400S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		PDF FRK460D, FRK460R, FRK460H 400S1 O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD O-204AE