Untitled
Abstract: No abstract text available
Text: VSX1850 500A Forward/Reverse Separate Excitation DC Motor Controller Roboteq’s VSX1850 is a high-current controller for Separate Excitation DC motors. The controller is composed of a unidirectional half-bridge capable of up to 500A for the motor’s armature, and a 25A bidirectional power bridge for the motor’s
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VSX1850
VSX1850
RS232,
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140tr
Abstract: No abstract text available
Text: Preliminary Technical Information MMIX1F520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions
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MMIX1F520N075T2
IXFZ520N075T2
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MMIX1F520N075T2
Abstract: IXFZ520N075T2 ixfz520n075
Text: Advance Technical Information MMIX1F520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions
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MMIX1F520N075T2
IXFZ520N075T2
MMIX1F520N075T2
IXFZ520N075T2
ixfz520n075
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET MMIX1F520N075T2 VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions
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MMIX1F520N075T2
IXFZ520N075T2
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information TrenchT2TM Power MOSFET VDSS ID25 IXTH500N04T2 IXTT500N04T2 = 40V = 500A Ω ≤ 1.6mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) G Symbol Test Conditions D D (Tab) S Maximum Ratings
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IXTH500N04T2
IXTT500N04T2
O-247
O-268
500N04T2
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IXTH500N04T2
Abstract: IXTT500N04T2 123B16
Text: Advance Technical Information IXTH500N04T2 IXTT500N04T2 TrenchT2TM Power MOSFET VDSS ID25 = 40V = 500A Ω ≤ 1.6mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 40
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IXTH500N04T2
IXTT500N04T2
O-247
O-268
500N04T2
IXTH500N04T2
IXTT500N04T2
123B16
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Untitled
Abstract: No abstract text available
Text: BUK464-500A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)3.4 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)62.5 Minimum Operating Temp (øC)
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BUK464-500A
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Untitled
Abstract: No abstract text available
Text: BUK444-500A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)2.1 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)
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BUK444-500A
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Untitled
Abstract: No abstract text available
Text: BUK454-500A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)3.7 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)
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BUK454-500A
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IXGQ240N30PB
Abstract: ixgq240n30 GQ240N30PB
Text: IXGQ240N30PB PolarTM High Speed IGBT VCES = 300V = 500A ICP VCE sat ≤ 1.6V For PDP Applications TO-3P Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VGES VGEM Continuous Transient ±20 ±30 V V G C E IC25 ICP IC(RMS) TC = 25°C (Chip Capability)
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IXGQ240N30PB
062inconds
IX5187
GQ240N30PB)
IXGQ240N30PB
ixgq240n30
GQ240N30PB
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A237
Abstract: AON7446
Text: AON7446 60V N-Channel MOSFET TM SDMOS General Description Product Summary The AON7446 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal
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AON7446
AON7446
A237
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Untitled
Abstract: No abstract text available
Text: AON7446 60V N-Channel MOSFET SDMOS TM General Description Product Summary The AON7446 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal
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AON7446
AON7446
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Untitled
Abstract: No abstract text available
Text: AON7452 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AON7452 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal
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AON7452
AON7452
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US1235
Abstract: AON7452
Text: AON7452 100V N-Channel MOSFET TM SDMOS General Description Product Summary The AON7452 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal
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AON7452
AON7452
US1235
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N mosfet 100v 500A
Abstract: mosfet 600V 20A TK20A60U to220sis MOSFET 400V TO-220 N mosfet 400v 500A TK20A60UIAR Mosfet 600V, 20A TK12J60U TK12A60U
Text: 08cj-H-01 600V系新構造 DTMOS シリーズ 600V Power MOSFETs with New Super Junction structure ◆ 近年家電製品の電源効率の向上や、セットの小型化が要求されており、これらの要求に対して スーパージャンクション構造を適用することで、シリコン固有の臨界電界で決定する理論限界を
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08cj-H-01
TK40J60T80mMax.
TK20A60UQg
00V/20A
TK20A60UIAR
00A/s
O-220SIS
TK12A60U
TK12D60U
O-220
N mosfet 100v 500A
mosfet 600V 20A
TK20A60U
to220sis
MOSFET 400V TO-220
N mosfet 400v 500A
Mosfet 600V, 20A
TK12J60U
TK12A60U
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BYC15 DIODE Preliminary RECTIFIER DIODE, HYPERFAST DESCRIPTION The UTC BYC15 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC15 is suitable for half-bridge lighting ballasts,
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BYC15
BYC15
BYC15L-6-TA2-T
BYC15G-6-TA2-T
O-220-2
QW-R601-026
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BYC20G
Abstract: Rectifier Diode 20A Vrrm 500V MOSFET 40A 600V BYC20-600
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYC20-600 DIODE RECTIFIER DIODE, HYPERFAST DESCRIPTION The UTC BYC20-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC20-600 is ideally used in half-bridge lighting
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BYC20-600
BYC20-600
BYC20L-600-
BYC20G-600-
O-220AC
QW-R601-027
BYC20G
Rectifier Diode 20A Vrrm 500V
MOSFET 40A 600V
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BYC8-600
Abstract: BYC8600
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYC8-600 DIODE ULTRAFAST, LOW SWITCHING LOSS RECTIFIER DIODE DESCRIPTION The UTC BYC8-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC8-600 is generally applied in continuous current
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BYC8-600
BYC8-600
BYC8L-600-
BYC8G-600-
O-220AC
QW-R601-025
BYC8600
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Untitled
Abstract: No abstract text available
Text: AON3613 30V Complementary MOSFET General Description Product Summary The AON3613 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications. N-channel P-channel
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AON3613
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYC15-600 DIODE RECTIFIER DIODE, HYPERFAST DESCRIPTION The UTC BYC15-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC15-600 is suitable for half-bridge lighting ballasts,
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BYC15-600
BYC15-600
BYC15L-600-TA2-T
BYC15G-600-TA2-T
O-220-2
QW-R601-026
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYC8-600 DIODE ULTRAFAST, LOW SWITCHING LOSS RECTIFIER DIODE DESCRIPTION The UTC BYC8-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC8-600 is generally applied in continuous current
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BYC8-600
BYC8-600
BYC8L-600-TA2-T
QW-R601-025
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BYC20G
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD BYC20-600 Preliminary DIODE RECT I FI ER DI ODE, H Y PERFAST ̈ DESCRI PT I ON The UTC BYC20-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC20-600 is ideally used in half-bridge lighting
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BYC20-600
BYC20-600
BYC20L-600-TA2-T
BYC20at
QW-R601-027
BYC20G
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Untitled
Abstract: No abstract text available
Text: AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4616
AO4616
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BYC15-600
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYC15-600 DIODE RECTIFIER DIODE, HYPERFAST DESCRIPTION The UTC BYC15-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC15-600 is suitable for half-bridge lighting ballasts,
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BYC15-600
BYC15-600
BYC15L-600-
BYC15G-600-
O-220AC
QW-R601-026
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