Selection guide
Abstract: No abstract text available
Text: Selection guide - March 2015 InGaAs Photodiodes Near infrared detectors with low noise and superb frequency characteristics HAMAMATSU PHOTONICS K.K. InGaAs Photodiodes Based on unique, in-house compound semiconductor process technology, Hamamatsu has designed and developed advanced InGaAs photodiodes that feature high speed, high
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KIRD0005E02
Selection guide
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Untitled
Abstract: No abstract text available
Text: Two-color detector K12729-010K Wide spectral response range: 0.9 to 2.55 m Compact ceramic package The K12729-010K is a two-color detector in a compact ceramic package, covering a wide spectral response range. Like the current K11908-010K, it incorporates two InGaAs PIN photodiodes with different spectral response, along the same optical
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K12729-010K
K12729-010K
K11908-010K,
B1201,
KIRD1129E01
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K1190
Abstract: KIRD1116E01 InGaAs InGaAs PIN photodiode Long Wavelength 2.6
Text: Two-color detector K11908-010K Two InGaAs PIN PD with different spectral response are arranged one above the other to cover a broad wavelength range The K11908-010K incorporates an InGaAs PIN photodiode cutoff wavelength: λc=1.7 m mounted over a long wavelength
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K11908-010K
KIRD1116E01
K1190
InGaAs
InGaAs PIN photodiode Long Wavelength 2.6
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InGaAs pin
Abstract: No abstract text available
Text: Two-color detector K11908-010K Two InGaAs PIN PD with different spectral response are arranged one above the other to cover a broad wavelength range The K11908-010K incorporates an InGaAs PIN photodiode cutoff wavelength: λc=1.7 m mounted over a long wavelength
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K11908-010K
K11908-010K
KIRD1116E01
InGaAs pin
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InGaAs pin
Abstract: No abstract text available
Text: Two-color detector K11908-010K Two InGaAs PIN PD with different spectral response are arranged one above the other to cover a broad wavelength range The K11908-010K incorporates an InGaAs PIN photodiode cutoff wavelength: λc=1.7 m mounted over a long wavelength
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K11908-010K
K11908-010K
KIRD1116E01
InGaAs pin
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EMCORE APD
Abstract: avalanche photodiode photodiode Avalanche photodiode APD photodiode 25G 2.5G APD APD 1550 nm bare die avalanche Photodiode 300 nm avalanche photodiode oc48 1550 fiber 2.5 bare die receiver avalanche 1550 fiber 2.5
Text: PRELIMINARY DATASHEET | DECEMBER 30, 2005 2.5 Gb/s Avalanche Photodiode Bare Die The 2.5 Gb/s avalanche photodiode device features high responsivity, low dark current, and facilitates designs that can achieve -34 dBm receiver sensitivity. Target applications include SONET OC-48, SDH
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OC-48,
STM-16,
OC-48
STM-16
EMCORE APD
avalanche photodiode
photodiode Avalanche photodiode APD
photodiode 25G
2.5G APD
APD 1550 nm bare die
avalanche Photodiode 300 nm
avalanche photodiode oc48 1550 fiber 2.5
bare die
receiver avalanche 1550 fiber 2.5
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850nm photodiode pigtail 50/125
Abstract: 8300 PD-8300 fiber multi-mode 850 850nm photodiode pigtail pd831
Text: Optoway PD-8300 * GaAs PIN PD MODULES PD-8300 SERIES GaAs PIN PHOTODIODE WITH 62.5/125 m MULTI-MODE FIBER PIGTAIL
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PD-8300
PD-8300
PD-8310
PD-8320
850nm photodiode pigtail 50/125
8300
fiber multi-mode 850
850nm photodiode pigtail
pd831
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high power laser diode price list
Abstract: 904nm
Text: ROITHNER LASERTECHNIK PRESENTS. NEW 405 nm LASER DIODES 405 nm laser diode, cw, price list page 1 RLT405-10MG, 405 +/- 10 nm, max. 20 mW, 75 °C, 5.6 mm, with photodiode DL-4146-301D, 410 +/- 5 nm, max. 20 mW, 60 °C, 5.6 mm, no photodiode NEW 405 nm LASERPOINTERS
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RLT405-10MG,
DL-4146-301D,
GLP-405-5,
GLP-405-10,
GLP-405-20,
RLDE405-12-6,
PLD904-4-T,
PLD904-5-T,
PLD904-10-T,
high power laser diode price list
904nm
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP dual inline package . It can be used to perform simple spectroscopic analysis.
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G12430
G12430-016D
G12430-032D
G12430-046D
40-pin
48-pin
18-pin
KIRD1124E01
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Linear Image sensor IC
Abstract: G9212-512S C7557 C8061-01 C8062-01 G9205 G9211 G9211-256S VREF256
Text: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a timing generator formed on a CMOS chip. The charge amplifier array is made up of CMOS
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G9211
G9214
G9205
G9208
G9214/G9205
SE-171
KMIR1011E06
Linear Image sensor IC
G9212-512S
C7557
C8061-01
C8062-01
G9211-256S
VREF256
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InGaAs APD photodiode 1550
Abstract: InGaas PIN photodiode, 1550 inGaAs photodiode 1550 InGaAs apd photodiode InGaAs pin
Text: PDINBU 45 UM DETECTORS 1100nm to 1650 nm InGaAs PIN Photodiodes PDINBU045G00A-0-0-01 PD-LD offers InGaAs PIN photodiodes with a 45 micron diameter active area that are ideal for use in Channel Monitoring Applications. The detectors exhibit their intrinsically high optical responsivity
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1100nm
PDINBU045G00A-0-0-01
InGaAs APD photodiode 1550
InGaas PIN photodiode, 1550
inGaAs photodiode 1550
InGaAs apd photodiode
InGaAs pin
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InGaAs PIN photodiode Wavelength .6 to 1.7
Abstract: No abstract text available
Text: InGaAs PIN photodiodes G10899 series Wide spectral response range 0.5 to 1.7 m The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the G10899 series has sensitivity extending
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G10899
SE-171
KIRD1109E01
InGaAs PIN photodiode Wavelength .6 to 1.7
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiodes G10899 series Wide spectral response range 0.5 to 1.7 m The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the G10899 series has sensitivity extending
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G10899
SE-171
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G10899-003K
Abstract: G10899 InGaAs PIN photodiode Wavelength .6 to 1.7
Text: InGaAs PIN photodiodes G10899 series Wide spectral response range 0.5 to 1.7 m The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the G10899 series has sensitivity extending
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G10899
G10899-003K
G10899-005K
G10899:
SE-171
KIRD1109E02
G10899-003K
InGaAs PIN photodiode Wavelength .6 to 1.7
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InGaAs photodiode array chip
Abstract: charge amplifier array G11135 Image Sensors G11135-512DE
Text: InGaAs linear image sensors G11135 series Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors consist of an InGaAs photodiode array and CMOS chip that contains a charge amplifier array, an offset compensation circuit,
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G11135
SE-171
KMIR1018E06
InGaAs photodiode array chip
charge amplifier array
Image Sensors
G11135-512DE
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G12072-54
Abstract: No abstract text available
Text: InGaAs PIN photodiode with preamp G12072-54 ROSA type, 1.3 m, 10 Gbps Features Applications φ1.25 mm sleeve type ROSA receiver optical sub-assembly 8 gigabit fiber channel 10 gigabit ethernet (LR) High-speed response: 11.3 Gbps SFP + transceiver correspondence
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G12072-54
SE-171
KIRD1115E01
G12072-54
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InGaAs apd photodiode
Abstract: APD Ghz LA 1260 APD-1300 APD 1300 2,5 GHz
Text: Optoway APD-1300 * InGaAs Avalanche PHOTODIODE with 50/125 m Fiber Pigtail *
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APD-1300
InGaAs apd photodiode
APD Ghz
LA 1260
APD-1300
APD 1300 2,5 GHz
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiode with preamp G12072-54 ROSA type, 1.3 m, 10 Gbps Features Applications φ1.25 mm sleeve type ROSA receiver optical sub-assembly 8 gigabit fiber channel 10 gigabit ethernet (LR) High-speed response: 11.3 Gbps SFP + transceiver correspondence
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G12072-54
SE-171
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Untitled
Abstract: No abstract text available
Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.
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SAE230NS
SAE500NS
SAE23
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Untitled
Abstract: No abstract text available
Text: HAMAMATSU CURRENT OUTPUT TYPE MOS LINEAR IMAGE SENSORS S3901, S3904 SERIES TECHNICAL DATA Wide Sensitive Area 2.5mm Pixel Height , High UV Sensitivity, Excellent Photometric Capabilities, Low Power Consumption FEATURES • Wide photosensitive area Pixel pitch : 50|.im (S3901), 25|um (S3904)
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S3901,
S3904
S3901)
S3904)
S3901
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PN 9-140
Abstract: hewlett packard application bulletin 73 HFBR24X4 HFBR-24X4 hp quadrature encoder detector quadrature IC marking jw marking code jw analog
Text: HEWLETT-PACKARD/ CMPNTS blE ]> • MMM7SAM E ll - HEWLETT 'UM PACKARD IHPA 25 MHz Low Cost Fiber Optic Receiver Technical Data HFBR-24X4 Series The HFBR-24X4 fiber optic receiver is designed to operate with the Hewlett-Packard HFBR-14XX fiber optic transm itters and 50/125 |im,
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4447SA4
HFBR-24X4
HFBR-14XX
HFBR-14X2
HFBR-14X4
HFBR-24X2
HFBR-24X6
PN 9-140
hewlett packard application bulletin 73
HFBR24X4
hp quadrature encoder
detector quadrature
IC marking jw
marking code jw analog
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hfbr4411
Abstract: hewlett packard application bulletin 73
Text: HEWLETT- PAC KARD/ CMPNTS blE ]> • MMM7 SAM Ell IHPA - HEWLETT 'UM PACKARD 25 MHz Low Cost Fiber Optic R eceiver Technical Data HFBR-24X4 S eries The HFBR-24X4 fiber optic receiver is designed to operate with the Hewlett-Packard HFBR-14XX fiber optic transm itters and 50/125 |im,
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HFBR-24X4
HFBR-14XX
HFBR-14X2
HFBR-14X4
HFBR-24X2
HFBR-24X6
hfbr4411
hewlett packard application bulletin 73
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Untitled
Abstract: No abstract text available
Text: BLUE ENHANCED PIN PHOTODIODES SPECIFICATIONS Responsivity: Series Resistance: Part Number 0.20 A/W minimum, 0.28 A/W typical @ 450nm 100i2m axim um m easured by applying +10m A to photodiode and m easuring voltage across anode and cathode Total Area (mm2)
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450nm
100i2m
172-12-22-D21
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InGaAs apd photodiode
Abstract: photodiode preamplifier AGC 55nm photodiode Avalanche photodiode FU-319SPA-C6 FU-319SPP-C6 STM-16 mitsubishi fu 1.31 ber
Text: MITSUBISHI OPTICAL DEVICES FU-319SPA-C6 InGaAs APD PREAMP MODULE FOR THE 1.31 iim AND 1.55 |im WAVELENGTH RANGE DESCRIPTION FU-319SPP-C6 is InGaAs avalanche photodiode module with GaAs preamplifier, designed for use in high-speed, long haul optical communication
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FU-319SPA-C6
FU-319SPP-C6
-33dBm
OC-48,
STM-16)
bS4102T
InGaAs apd photodiode
photodiode preamplifier AGC
55nm
photodiode Avalanche photodiode
FU-319SPA-C6
FU-319SPP-C6
STM-16
mitsubishi fu 1.31 ber
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