GSS4936
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/10/31 REVISED DATE : GSS4936 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 37m 5.8A Description The GSS4936 provide the designer with the best combination of fast switching, ruggedized device design, ultra
|
Original
|
GSS4936
GSS4936
|
PDF
|
ap4936gm
Abstract: No abstract text available
Text: AP4936GM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D2 ▼ Simple Drive Requirement D1 D1 ▼ Fast Switching 25V RDS ON 37mΩ ID G2 ▼ RoHS Compliant BVDSS 5.8A S2 G1 SO-8 S1 Description
|
Original
|
AP4936GM
ap4936gm
|
PDF
|
4560r
Abstract: mosfet 4812 PJ4812 SOIC-08
Text: PJ4812 25V Dual N-Channel Enhancement Mode MOSFET SOIC-08 FEATURES • RDS ON , VGS@10V,IDS@5.8A=15mΩ • RDS(ON), VGS@4.5V,IDS@4.7A=24mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters
|
Original
|
PJ4812
SOIC-08
SOIC-08
MIL-STD-750
4560r
mosfet 4812
PJ4812
|
PDF
|
d237m
Abstract: ap4936m
Text: AP4936M Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D2 ▼ Simple Drive Requirement D1 D1 ▼ Fast Switching BVDSS 25V RDS ON 37mΩ ID 5.8A G2 S2 SO-8 G1 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the
|
Original
|
AP4936M
d237m
ap4936m
|
PDF
|
680MJ
Abstract: No abstract text available
Text: SSFP6N80 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 800V Simple Drive Requirement ID25 = 5.8A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability
|
Original
|
SSFP6N80
00A/s
di/dt200A/S
width300S;
680MJ
|
PDF
|
BUZ73A equivalent
Abstract: buz73a BUZ73 ta4600 BUZ76A TB334
Text: BUZ73A Semiconductor Data Sheet 5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET October 1998 File Number 2263.1 Features • 5.8A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.600Ω (BUZ73 field effect transistor designed for applications such as
|
Original
|
BUZ73A
BUZ73
TA4600.
BUZ73A equivalent
buz73a
ta4600
BUZ76A
TB334
|
PDF
|
smd diode 74a
Abstract: 78 DIODE SMD KRF7319 P-channel Dual MOSFET VGS -25V
Text: IC IC SMD Type HEXFET Power MOSFET KRF7319 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit V VDS 30 -30 Continuous Drain Current *5 Ta = 25
|
Original
|
KRF7319
-100A/
smd diode 74a
78 DIODE SMD
KRF7319
P-channel Dual MOSFET VGS -25V
|
PDF
|
PN channel MOSFET 10A
Abstract: No abstract text available
Text: PD - 96125 IRF7313QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N- Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 1 8 D1 G1 2
|
Original
|
IRF7313QPbF
EIA-481
EIA-541.
PN channel MOSFET 10A
|
PDF
|
IRF7319
Abstract: 1606a 1606a mosfet 5.8A, 25V, N Channel MOSFET
Text: PD - 9.1606A IRF7319 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N E L M O S F E T 1 8 2 7 3 6 4 5 D1 D1 N-Ch P-Ch 30V -30V
|
Original
|
IRF7319
IRF7319
1606a
1606a mosfet
5.8A, 25V, N Channel MOSFET
|
PDF
|
IRF7319PBF
Abstract: irf MOSFET p-CH
Text: PD - 95267 IRF7319PbF l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Description
|
Original
|
IRF7319PbF
and12
EIA-481
EIA-541.
IRF7319PBF
irf MOSFET p-CH
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 95267 IRF7319PbF HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 N-Ch P-Ch 30V -30V VDSS
|
Original
|
IRF7319PbF
EIA-481
EIA-541.
|
PDF
|
EIA-541
Abstract: F7101 IRF7101 PN channel MOSFET 10A
Text: PD - 96125A IRF7313QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N- Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Description
|
Original
|
6125A
IRF7313QPbF
extrem461
EIA-481
EIA-541.
EIA-541
F7101
IRF7101
PN channel MOSFET 10A
|
PDF
|
96364
Abstract: No abstract text available
Text: PD - 96364 AUTOMOTIVE MOSFET AUIRF7319Q HEXFET Power MOSFET Features l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 N-CHANNEL MOSFET
|
Original
|
AUIRF7319Q
96364
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AUIRF7319Q AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive [Q101] Qualified*
|
Original
|
AUIRF7319Q
|
PDF
|
|
|
p-channel 250V 30A power mosfet
Abstract: AUIRF7379Q
Text: PD - 96366B AUTOMOTIVE MOSFET AUIRF7379Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified
|
Original
|
96366B
AUIRF7379Q
p-channel 250V 30A power mosfet
AUIRF7379Q
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 96366B AUTOMOTIVE MOSFET AUIRF7379Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified
|
Original
|
96366B
AUIRF7379Q
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AUIRF7379Q AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified*
|
Original
|
AUIRF7379Q
|
PDF
|
Transistor Mosfet N-Ch 30V
Abstract: No abstract text available
Text: PD - 96111A IRF7379QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free 6 '
|
Original
|
6111A
IRF7379QPbF
EIA-481
EIA-541.
Transistor Mosfet N-Ch 30V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 96111 IRF7379QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 N-CHANNEL MOSFET
|
Original
|
IRF7379QPbF
EIA-481
EIA-541.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 96366 AUTOMOTIVE MOSFET AUIRF7379Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified
|
Original
|
AUIRF7379Q
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 96111B IRF7379QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1
|
Original
|
96111B
IRF7379QPbF
EIA-481
EIA-541.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P D - 9 .1 6 0 6 A International IÖ R Rectifier IRF7319 PRELIMINARY HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated N-C H A N N E L M O S F E T 51 □ !
|
OCR Scan
|
IRF7319
|
PDF
|
IRF7319
Abstract: 49AA
Text: International IG R Rectifier P D -9.1606 IRF7319 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fglly Avalanche Rated * -CHANNEL UOSFE* ^ "P -O L D I SI I Gt a r-*- i—.h N-Cti P-Ch
|
OCR Scan
|
IRF7319
IRF7319
49AA
|
PDF
|
1RF7319
Abstract: IRF7319 IRF7319 0 MOSFET ior 144
Text: PD - 9.1606A International I R Rectifier IRF7319 HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated N-Ch V dss 30V P-Ch -3 0 V R d S oti 0 . 0 2 9 Q 0 .0 5 8 Î2
|
OCR Scan
|
IRF7319
C-150
Fig20.
C-151
1RF7319
IRF7319
IRF7319 0
MOSFET ior 144
|
PDF
|
