RFS1003
Abstract: 5850MHZ
Text: RFS1003 5.1-5.9 GHz U-NII Power Amplifier Product Description Applications The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency band. With a P1dB of 29 dBm, the
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RFS1003
RFS1003
WLAN/802
11a/HIPERLAN/2
DRFS-1003-0DSH
5850MHZ
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Untitled
Abstract: No abstract text available
Text: MGA-25203 5.1-5.9GHz 3x3mm WiFi and WiMAX Power Amplifier Data Sheet Description Features Avago Technologies MGA-25203 linear power amplifier is designed for mobile and fixed wireless data applications in the 5.1 to 5.9 GHz frequency ranges. The PA is optimized
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MGA-25203
MGA-25203
11a/n
50MIN
AV02-1961EN
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MGA-25203
Abstract: No abstract text available
Text: MGA-25203 5.1-5.9GHz 3x3mm WiFi and WiMAX Power Amplifier Data Sheet Description Features Avago Technologies MGA-25203 linear power amplifier is designed for mobile and fixed wireless data applications in the 5.1 to 5.9 GHz frequency ranges. The PA is optimized
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MGA-25203
MGA-25203
11a/n
50MIN
AV02-1961EN
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wifi amplifier circuit diagram
Abstract: wifi amplifier circuit MGA-25203 WiFi PA wifi power amplifier circuit 25203 11MHZ avago mga x
Text: MGA-25203 5.1-5.9GHz 3x3mm WiFi and WiMAX Power Amplifier Preliminary Data Sheet Description Features Avago Technologies MGA-25203 linear power amplifier is designed for mobile and fixed wireless data applications in the 5.1 to 5.9 GHz frequency ranges. The PA is optimized
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MGA-25203
MGA-25203
11a/b/g/n
100pF
1000pF
AV02-196EN
wifi amplifier circuit diagram
wifi amplifier circuit
WiFi PA
wifi power amplifier circuit
25203
11MHZ
avago mga x
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MGA-25203
Abstract: MGA-25203-BLKG 58GH
Text: MGA-25203 5.1 - 5.9 GHz WiFi and WiMAX Power Amplifier 3x3mm Data Sheet Description Features Avago Technologies MGA-25203 linear power amplifier is designed for mobile and fixed wireless data applications in the 5.1 to 5.9 GHz frequency ranges. The PA is optimized
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MGA-25203
MGA-25203
11a/n
AV02-1961EN
MGA-25203-BLKG
58GH
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53GHZ/512K/533FSB
Abstract: No abstract text available
Text: MGA-25203 5.1-5.9GHz 3x3mm WiFi and WiMAX Power Amplifier Data Sheet Description Features Avago Technologies MGA-25203 linear power amplifier is designed for mobile and fixed wireless data applications in the 5.1 to 5.9 GHz frequency ranges. The PA is optimized
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MGA-25203
MGA-25203
11a/n
50MIN
AV02-1961EN
53GHZ/512K/533FSB
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Untitled
Abstract: No abstract text available
Text: RFS1003 5.1-5.9 GHz U-NII Power Amplifier 2 GND N/C VD2 1 GND N/C VD1 The RFS1003 power amplifier is a high-power, highperformance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency band. With a P1dB of 29 dBm, the device is ideal as a
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RFS1003
RFS1003
WLAN/802
11a/HIPERLAN/2
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JESD 95-1, SPP-012
Abstract: No abstract text available
Text: RFS1003 5.1-5.9 GHz U-NII Power Amplifier GND 3 RF IN 4 GND 5 N/C GND 2 VD2 N/C GND 1 VD1 N/C GND Product Description The RFS1003 power amplifier is a high-power, highperformance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency
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RFS1003
WLAN/802
11a/HIPERLAN/2
RFS1003
24-pin
DRFS-1003-0DSH
JESD 95-1, SPP-012
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5.1 audio amplifier board
Abstract: 5.1 surround sound dolby pcb 5.1 audio power amplifier 5.1 audio amplifier pcb 5.1 Channel audio amplifier digital dts dolby 5.1 ic LED Panel Display Signal Theory 5.1channel amplifier Lip Sync Delay ICs MAS3530H
Text: SYSTEM SOLUTION Digital 5.1 Audio Reference Design “Arena” Sept/2004 Digital 5.1 Audio Reference Design “Arena” Close-to-Production Audio Decoder/Amplifier SYSTEM SOLUTION Micronas offers complete system solutions for various Audio Market segments, based
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Sept/2004
6253-020-1SS
D-79108
D-79008
5.1 audio amplifier board
5.1 surround sound dolby pcb
5.1 audio power amplifier
5.1 audio amplifier pcb
5.1 Channel audio amplifier
digital dts dolby 5.1 ic
LED Panel Display Signal Theory
5.1channel amplifier
Lip Sync Delay ICs
MAS3530H
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RFSP5031
Abstract: No abstract text available
Text: Advanced RFSP5031 5.1-5.9 GHz U-NII PA with Linearizer Product Description Applications The RFSP5031 power amplifier with linearizer is a high-performance GaAs HBT IC designed for use in transmit applications in the 5.1-5.9 GHz frequency band. With a P1dB of 26
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RFSP5031
RFSP5031
DRFS-P5031-DSH
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HMC408LP3
Abstract: HMC408 HMC415 FDC6323L HMC314 HMC326MS8G HMC327MS8G HMC406MS8G HMC407MS8G HMC413QS16G
Text: v00.0103 HMC408LP3 PRODUCT NOTE A Simple CMOS Power Control Circuit for The HMC408LP3 Amplifier General Description The HMC408LP3 is a 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor HBT Power Amplifier MMIC, which offers +30 dBm P1dB.
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HMC408LP3
HMC327MS8G
HMC406MS8G
HMC314
HMC326MS8G
HMC407MS8G
HMC408LP3
HMC413QS16G
HMC408
HMC415
FDC6323L
HMC314
HMC326MS8G
HMC327MS8G
HMC406MS8G
HMC407MS8G
HMC413QS16G
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Untitled
Abstract: No abstract text available
Text: 2SC4707 SILICON NPN EPITAXIAL TYPE LOW FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 5.1 MAX SWITCHING APPLICATIONS. . Excellent hFE Linearity : h F E 2 = 3 5 (Min.), (VCE=2V, IC=300mA) . Complementary to 2SA1811 MAXIMUM RATINGS (Ta=25°C)
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2SC4707
300mA)
2SA1811
100mA
300mA
300mA,
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SC1959
Abstract: 2SC1959
Text: TOSHIBA TRANSISTOR. SEM ICONDUCTOR T O SH IB A TECHNICAL 2 S C 1 959 DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2 SC 1959) Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS . 5.1 MAX.
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2SC1959
400mA
2SA562TM.
100man
SC1959)
SC1959
2SC1959
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2SA817A
Abstract: 2SC1627A
Text: 2SA817A TOSHIBA 2SA817A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS • • 5.1 MAX. Complementary to 2SC1627A. Driver Stage Application of 30 to 35 Watts Amplifiers.
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2SA817A
2SC1627A.
O-92MOD
25truments,
2SA817A
2SC1627A
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2SC1627A
Abstract: No abstract text available
Text: TOSHIBA 2SC1627A 2SC1627A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 5.1 MAX VOLTAGE AMPLIFIER APPLICATIONS. • • Complementary to 2SA817A. Driver Stage Application of 30 to 35 Watts Amplifiers.
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2SC1627A
2SA817A.
75MAX.
T0-92M0D
2SC1627A
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A965
Abstract: 2SA965 2SC2235
Text: 2SA965 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA965 Unit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • 5.1 MAX Complementary to 2SC2235. MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage
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2SA965
2SC2235.
75MAX
A965
2SA965
2SC2235
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toshiba 2sa965 audio power amplifier
Abstract: 2SA965 2SC2235
Text: TOSHIBA 2SC2235 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2235 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 5.1 M AX DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SA965. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SC2235
2SA965.
O-92MOD
toshiba 2sa965 audio power amplifier
2SA965
2SC2235
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2SA965
Abstract: 2SC2235
Text: TOSHIBA 2SA965 2SA965 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • 5.1 M AX Complementary to 2SC2235. MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage
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2SA965
2SC2235.
75MAX
2SA965
2SC2235
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2SC1627A
Abstract: 2SA817A 2SA817A transistor
Text: TOSHIBA 2SC1627A 2SC1627A TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 5.1 MAX. VOLTAGE AMPLIFIER APPLICATIONS. • • Complementary to 2SA817A. Driver Stage Application of 30 to 35 Watts Amplifiers.
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2SC1627A
2SA817A.
75MAX
O-92MOD
2SC1627A
2SA817A
2SA817A transistor
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2SK30ATM 0
Abstract: 2SK30ATM TOSHIBA 2SK30ATM
Text: TO SH IB A 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS U nit in mm . 5.1 M AX. • High Breakdown Voltage : V Gj g = —50 V
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2SK30ATM
100ka,
100ka
2SK30ATM 0
TOSHIBA 2SK30ATM
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2SK30A
Abstract: 2SK30ATM 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM
Text: TO SH IB A 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS U nit in mm . 5.1 M AX. High Breakdown Voltage : V Gj g = —50 V
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2SK30ATM
100ka,
100ka
2SK30A
2SK30ATM
2SK30ATM Y
2SK30ATM 0
TOSHIBA 2SK30ATM
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2SA965
Abstract: 2SC2235
Text: TO SH IBA 2SC2235 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2235 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 5.1 MAX DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SA965. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SC2235
2SA965.
O-92MOD
2SA965
2SC2235
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toshiba 2sa965 audio power amplifier
Abstract: toshiba audio power amplifier 2SA965 2SC2235 transistor 2sC2235 0058669
Text: TO SH IBA 2SC2235 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2235 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS 5.1 MAX. DRIVER STAGE AMPLIFIER APPLICATIONS • Complementary to 2SA965. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SC2235
2SA965.
O-92MOD
toshiba 2sa965 audio power amplifier
toshiba audio power amplifier
2SA965
2SC2235
transistor 2sC2235
0058669
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2SA817A
Abstract: 2SC1627A
Text: 2SA817A TO SH IBA 2SA817A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. • • 5.1 MAX Complementary to 2SC1627A. Driver Stage Application of 30 to 35 Watts Amplifiers.
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2SA817A
2SC1627A.
O-92MOD
2SA817A
2SC1627A
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