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    EDI7F4342MC

    Abstract: LH28F016SU a1458
    Text: White Electronic Designs EDI7F4342MC 4x2Mx32 FLASH MODULE DESCRIPTION FEATURES n 4x2Mx32 n Based on Sharp's LH28F016SU Flash Device n Fast Read Access Time - 80ns n 5V Only Reprogramming n Low Power Dissipation n 60mA per Device Active Current n 10µA per Device CMOS Standby Current


    Original     		PDF EDI7F4342MC 4x2Mx32 4x2Mx32 LH28F016SU 150ns EDI7F4342MC 2Mx32. EDI7F4342MC80BNC a1458

    Untitled

    Abstract: No abstract text available
    Text: WED3DL328V White Electronic Designs 8Mx32 SDRAM FEATURES DESCRIPTION n n n n n n n The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119


    Original     		PDF WED3DL328V 8Mx32 WED3DL328V 4x2Mx32. 8Mx16 133MHz, 125MHz 100MHz52

    100MHZ

    Abstract: 133MHZ 8MX32 WED3DL328V
    Text: WED3DL328V White Electronic Designs 8Mx32 SDRAM FEATURES             DESCRIPTION The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer


    Original     		PDF WED3DL328V 8Mx32 WED3DL328V 4x2Mx32. 8Mx16 133MHZ, 125MHZ 100MHZ 100MHZ 133MHZ

    EDI7F4342MC

    Abstract: LH28F016SU
    Text: White Electronic Designs EDI7F4342MC 4x2Mx32 FLASH MODULE DESCRIPTION FEATURES „ 4x2Mx32 „ Based on Sharp's LH28F016SU Flash Device „ Fast Read Access Time - 80ns „ 5V Only Reprogramming „ The EDI7F4342MC is organized as four banks of 2Mx32. The module is based on Sharp's LH28F016SU - 2Mx8


    Original     		PDF EDI7F4342MC 4x2Mx32 4x2Mx32 EDI7F4342MC 2Mx32. LH28F016SU 150ns EDI7F4342MC80BNC

    EDI7F4342MC

    Abstract: LH28F016SU
    Text: EDI7F4342MC 4x2Mx32 FLASH MODULE FEATURES DESCRIPTION n 4x2Mx32 The EDI7F4342MC is organized as four banks of 2Mx32. The module is based on Sharp's LH28F016SU - 2Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate. n Based on Sharp's LH28F016SU Flash Device


    Original     		PDF EDI7F4342MC 4x2Mx32 4x2Mx32 EDI7F4342MC 2Mx32. LH28F016SU 150ns EDI7F4342MC80BNC

    EDI7F4342MV

    Abstract: No abstract text available
    Text: White Electronic Designs EDI7F4342MV 4x2Mx32 FLASH MODULE FEATURES n 4x2Mx32 n Based on Intel's E28F016S3 Flash Device n Fast Read Access Time - 120ns n Flexible Smart Voltage n n 2.7-3.6V Program Erase n 2.7-3.6V Read Operation n 12Vpp Fast Production Programming


    Original     		PDF EDI7F4342MV 4x2Mx32 4x2Mx32 E28F016S3 120ns EDI7F4342MV 2Mx32. 12Vpp 150ns

    100MHZ

    Abstract: 133MHZ 8MX32 WED3DL328V a1011
    Text: White Electronic Designs WED3DL328V 8Mx32 SDRAM FEATURES DESCRIPTION The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119 lead, 14mm by


    Original     		PDF WED3DL328V 8Mx32 WED3DL328V 4x2Mx32. 8Mx16 133MHZ, 125MHZ 100MHZ 100MHZ 133MHZ a1011

    E28F016S3

    Abstract: No abstract text available
    Text: White Electronic Designs EDI7F4342MV 4x2Mx32 FLASH MODULE FEATURES „ 4x2Mx32 „ Based on Intel's E28F016S3 Flash Device „ Fast Read Access Time - 120ns „ Flexible Smart Voltage „ „ 2.7-3.6V Program Erase „ 2.7-3.6V Read Operation „ 12Vpp Fast Production Programming


    Original     		PDF 4x2Mx32 E28F016S3 120ns 12Vpp EDI7F4342MV EDI7F4342MV 2Mx32. 150ns

    ED16-23

    Abstract: TMS320C TMS320C6000 WED3DL328V
    Text: WED3DL328V 8Mx32 SDRAM PRELIMINARY FEATURES DESCRIPTION • 53% Space Savings vs. Monolithic Solution The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and


    Original     		PDF WED3DL328V 8Mx32 WED3DL328V 4x2Mx32. 8Mx16 TMS320C6000 TMS320C, C6211 ED16-23 TMS320C

    3402 transistor

    Abstract: EDI7F4342MV
    Text: EDI7F4342MV 4x2Mx32 FLASH MODULE FEATURES DESCRIPTION • 4x2Mx32 The EDI7F4342MV is organized as four banks of 2Mx32. The module is based on Intel's E28F016S3 - 2Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate. • Based on Intel's E28F016S3 Flash Device


    Original     		PDF EDI7F4342MV 4x2Mx32 4x2Mx32 EDI7F4342MV 2Mx32. E28F016S3 120ns 150ns 12Vpp 3402 transistor

    C3604BD-F

    Abstract: LTN150XG-L05-G ul1571 wire LTN150PG-L03 LTN150XG LTN150XG-L05 2203-006090 bga nvidia SLB9635TT12 BA59-01751A
    Text: 10. Electrical Partlist Option SEC code 0902-001916 0902-001937 0902-001938 0902-001939 0902-001943 1105-001609 1105-001609 1105-001610 1105-001610 1105-001611 1105-001611 1105-001614 1105-001614 1105-001615 1105-001615 1105-001682 1105-001682 1105-001683


    Original     		PDF K4J52324QC 512Mbit 8x2Mx32Bit HYB18H512321AFL C3604BD-F LTN150XG-L05-G ul1571 wire LTN150PG-L03 LTN150XG LTN150XG-L05 2203-006090 bga nvidia SLB9635TT12 BA59-01751A

    C3604BD-F

    Abstract: EMI500 samsung r540 100nF 50V X7R samsung 1608 resistor r336 r331 r322 r330 r1 B536 c796 b527 B538 c337 pnp
    Text: - This Document can not be used without Samsung's authorization - 10. Part List 1 Internal System 10/100) Internal System(10/100 Mbit) Location R231 SEC Code Name 2007-000070 R-CHIP 0ohm,5%,1/10W,TP,1608, Specification Quantity 1 2007-000171 R-CHIP 0ohm,5%,1/16W,TP,1005,


    Original     		PDF 512Mbit 8x2Mx32Bit K4J52324QC HYB18H512321AFL C3604BD-F EMI500 samsung r540 100nF 50V X7R samsung 1608 resistor r336 r331 r322 r330 r1 B536 c796 b527 B538 c337 pnp

    samsung r540

    Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
    Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP


    Original     		PDF ZD500 QF500 RHU002N06 200MA OT-323 F820P 33x33mm 500MHz K4J52324QC 512Mbit samsung r540 Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535

    Untitled

    Abstract: No abstract text available
    Text: c a WPF8M32XA-90PSC5 I/I/HITE /M ICRO ELECTRONICS 4x2Mx32 5V FLASH S IM M p relim in a ry * FEATURES • A c c e s s T im e of 90ns ■ 100,000 Erase/Program C ycles ■ Packaging: ■ O rganized as fo u r banks of 2 M x 3 2 • 80-pin S I M M ■ C o m m ercial T em peratu re Range


    OCR Scan     		PDF WPF8M32XA-90PSC5 4x2Mx32 80-pin

    CS 1602 B

    Abstract: 29f016-90
    Text: WPF8M32XA-90PSC5 WHITE M IC R O ELECTRO NICS 4x2Mx32 5V FLASH S IM M PR ELIM IN A R Y ' FEATURES • A c c e ss T im e of 90ns ■ 100,000 E ra s e /P ro g ra m Cycles ■ ■ O rg an ized as fo u r banks of 2 M x 3 2 ■ C o m m e rc ia l T e m p e ra tu re Range


    OCR Scan     		PDF WPF8M32XA-90PSC5 4x2Mx32 80-pin CS 1602 B 29f016-90