IPD50N04S4-08
Abstract: 4N0408
Text: IPD50N04S4-08 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 7.9 mΩ ID 50 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)
|
Original
|
PDF
|
IPD50N04S4-08
PG-TO252-3-313
4N0408
IPD50N04S4-08
4N0408
|
4N0408
Abstract: IPG20N04S4-08 PG-TDSON-8-4
Text: IPG20N04S4-08 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max4) 7.6 mW ID 20 A Features • Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
|
Original
|
PDF
|
IPG20N04S4-08
4N0408
4N0408
IPG20N04S4-08
PG-TDSON-8-4
|
4N0408
Abstract: No abstract text available
Text: IPG20N04S4-08A OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS on ,max4) 7.6 mΩ ID 20 A Features • Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-10 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
|
Original
|
PDF
|
IPG20N04S4-08A
PG-TDSON-8-10
4N0408
4N0408
|