4N 50ZG
Abstract: No abstract text available
Text: NDD04N50Z N-Channel Power MOSFET 500 V, 2.7 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS RDS on (MAX) @ 1.5 A
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NDD04N50Z
NDD04N50Z/D
4N 50ZG
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4N 50ZG
Abstract: 50ZG ndd04n50zt4g BFR 965 369AA
Text: NDD04N50Z N-Channel Power MOSFET 500 V, 2.7 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS RDS on (MAX) @ 1.5 A
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NDD04N50Z
JESD22-A114)
NDD04N50Z/D
4N 50ZG
50ZG
ndd04n50zt4g
BFR 965
369AA
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4N 50ZG
Abstract: diode marking code 4n 369D A114 JESD22 NDD04N50ZT4G ndd04n50
Text: NDP04N50Z, NDD04N50Z N-Channel Power MOSFET 500 V, 2.7 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant http://onsemi.com ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise noted
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NDP04N50Z,
NDD04N50Z
NDD04N50Z/D
4N 50ZG
diode marking code 4n
369D
A114
JESD22
NDD04N50ZT4G
ndd04n50
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