Untitled
Abstract: No abstract text available
Text: SMART SM536084002P3UU Modular Technologies December 13, 1996 32MByte 8M x 36 DRAM Module - 4Mx4 based 72-pin SIMM Features • • • • • • • • • • • Standard : JEDEC Configuration : Parity Access Time : 60/70/80ns Operation Mode : FPM
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SM536084002P3UU
32MByte
72-pin
60/70/80ns
300mil
AMP-7-382486-2
AMP-822019-4
AMP-822110-3
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PDF
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Untitled
Abstract: No abstract text available
Text: SMART SM57204400UPUGU Modular Technologies September 23, 1997 32MByte 4M x 72 DRAM Module - 4Mx4 based 168-pin DIMM, Buffered, Parity Features • • • • • • • • • • • Standard : JEDEC Configuration : Parity Access Time : 50/60/70ns
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Original
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SM57204400UPUGU
32MByte
168-pin
50/60/70ns
300mil
AMP-390052-1
DQ17N
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PDF
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Untitled
Abstract: No abstract text available
Text: SMART SM536044002PUUU Modular Technologies March 17, 1998 16MByte 4M x 36 DRAM Module - 4Mx4 based 72-pin SIMM Features • • • • • • • • • • • Standard : JEDEC Configuration : Parity Access Time : 60/70/80ns Operation Mode : FPM Operating Voltage :
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Original
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SM536044002PUUU
16MByte
72-pin
60/70/80ns
300mil
AMP-7-382486-2
AMP-822019-4
AMP-822110-3
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PDF
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MB811
Abstract: No abstract text available
Text: July 1997 Revision 1.0 data sheet FSA4UN364 2/4 B-60J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)B-60J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. FSA4UN3644B supports 4K refresh. FSA4UN3642B supports 2K refresh.
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Original
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FSA4UN364
B-60J
16MByte
16-megabyte
36bits,
72-pin,
FSA4UN3644B
FSA4UN3642B
MB811
|
PDF
|
MB811
Abstract: No abstract text available
Text: June1996 Revision 1.0 DATA SHEET FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. DM4M4N360 supports 4K refresh. DM4M2N360
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Original
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June1996
FSA4UN364
16MByte
16-megabyte
36bits,
72-pin,
DM4M4N360
DM4M2N360
MB811
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PDF
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MB811
Abstract: No abstract text available
Text: May1996 Revision 1.0 DATA SHEET DM4M 4/2 N360-(60/70)JG-IS 16MByte (4M x 36) CMOS DRAM Module General Description The DM4M(4/2)N360-(60/70)JG-IS is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. DM4M4N360 supports 4K refresh. DM4M2N360 supports
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Original
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May1996
16MByte
16-megabyte
36bits,
72-pin,
DM4M4N360
DM4M2N360
MB811
MB814100C-
MP-DRAMM-DS-20311-4/96
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PDF
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MB811
Abstract: TPC 8608
Text: November 1996 Revision 1.1 DATA SHEET FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. FSA4UN3644 supports 4K refresh. FSA4UN3642
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Original
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FSA4UN364
16MByte
16-megabyte
36bits,
72-pin,
FSA4UN3644
FSA4UN3642
MB811
MB814100C-
TPC 8608
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PDF
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MCM91430
Abstract: Motorola CMOS Dynamic RAM 1M Motorola CMOS Dynamic RAM 1M x 1 1mx1 DRAM DIP MCM511000A mcm511000 1K x4 static ram application note Motorola CMOS Dynamic RAM 16m x 32 TSOP 400 86 MCM69F536B
Text: Memory Products In Brief . . . Motorola’s memory product portfolio has been expanded to support a broad range of engineering applications. Included in this portfolio are asynchronous devices with access times of 6 ns at 256K–bit density, 6 ns at 5 V 1
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Original
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stan00C
1Mx16
MCM4L4400B
MCM5L4100A
MCM54100A
256Kx16
512Kx8
MCM5L4100A
MCM54100A
MCM91430
Motorola CMOS Dynamic RAM 1M
Motorola CMOS Dynamic RAM 1M x 1
1mx1 DRAM DIP
MCM511000A
mcm511000
1K x4 static ram application note
Motorola CMOS Dynamic RAM 16m x 32
TSOP 400 86
MCM69F536B
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PDF
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Untitled
Abstract: No abstract text available
Text: SM5364400 August 1994 Rev 1 SMART Modular Technologies SM5364400 16MByte 4M x 36 CMOS DRAM Module General Description Features The SM5364400 is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36 bits, in a 72-pin, leadless, single-in-line memory module
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Original
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SM5364400
SM5364400
16MByte
16-megabyte
72-pin,
60/70/80ns
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PDF
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Untitled
Abstract: No abstract text available
Text: SM5364000 June 1994 Rev 2 SMART Modular Technologies SM5364000 16MByte 4M x 36 CMOS DRAM Module (2K Refresh) General Description Features The SM5364000 is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36 bits, in a 72-pin, leadless, single-in-line memory module
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Original
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SM5364000
SM5364000
16MByte
16-megabyte
72-pin,
60/70/80ns
|
PDF
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1Mx9 DRAM 30-pin SIMM
Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
Text: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C
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OCR Scan
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1Mx32
1Mx33
1Mx36
1Mx40
2Mx32
2Mx36
1Mx9 DRAM 30-pin SIMM
KMM594000C
30 pin simm
8mx32 simm 72 pin
4Mx9 DRAM 30-pin SIMM
4MX39
4m dram 72-pin simm 32
DRAM 30-pin SIMM
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PDF
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FPM DRAM 30-pin SIMM
Abstract: 4MX9 4Mx9 DRAM 30-pin SIMM
Text: CELESTICA,. 4M x 9 PTY FPM SIMM 4MB FPM ORAM SIMM FEATURES 30-pin industry standard 1-byte single-in-line memory module JEDEC compliant: No 95: M0-064, No 21 -C: 4.2-1 Supports 22.5°, 40° and 90° connector High performance, CMOS Single 5.0 ± 10% power supply
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OCR Scan
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30-pin
M0-064,
20432C)
20946C
FPM DRAM 30-pin SIMM
4MX9
4Mx9 DRAM 30-pin SIMM
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PDF
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LG 2MX32 EDO simm module
Abstract: GMM732201 GMM732411OCNS
Text: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns I I MB I 4MB 1 lMx8 1Mx9 I h r t 4Mx8 60ns • \GMM781000CNS-6 H GMM791000CNS-6 II 70ns 1— 1GMM781OOOCNS-7 1— 1GMM791000CNS-7 1 | | GMM784000CS-6 GMM794000CS-6 1— 1GMM784000CS-7 1— 1GMM794000CS-7 | \- 4Mx9 !Mx32
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OCR Scan
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\GMM781000CNS-6
GMM791000CNS-6
GMM784000CS-6
GMM794000CS-6
1GMM781OOOCNS-7
1GMM791000CNS-7
1GMM784000CS-7
1GMM794000CS-7
1Mx40
2Mx32
LG 2MX32 EDO simm module
GMM732201
GMM732411OCNS
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PDF
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m7401
Abstract: 1MX1 GMM732211OCMS M7641 GMM7324100cns 83CT 128MB 72-pin SIMM dram 72-pin simm 128mb
Text: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns 1MB 4MB 60ns 70ns 1M x8 1GMM781000CNS-6 — | GMM781000CNS-7 1M x9 GMM791GOOCNS-6 J — I GMM791000CNS-7 4Mx8 GMM784000CS-6 4Mx9 GMM794000CS-6 1M x 32 H H GMM784000CS-7 GMM794000CS-7 I GMM7321OOOCS/SG-6 } I GMM732101OCS/SG-6
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OCR Scan
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1GMM781000CNS-6
GMM791GOOCNS-6
GMM784000CS-6
GMM794000CS-6
GMM781000CNS-7
GMM791000CNS-7
GMM784000CS-7
GMM794000CS-7
GMM7321OOOCS/SG-6
GMM732101OCS/SG-6
m7401
1MX1
GMM732211OCMS
M7641
GMM7324100cns
83CT
128MB 72-pin SIMM
dram 72-pin simm 128mb
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PDF
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41C4000CJ
Abstract: No abstract text available
Text: DRAM MODULE KMM594100AKN Fast Page Mode 4 Mega Byte Preliminary \ 4Mx9 DRAM SIMM , 2K Refresh , 5 V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM594100AKN is a 4M bit x 9 Dynamic RAM high density memory module. The Samsung KMM594100AKN consists of two CMOS
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OCR Scan
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KMM594100AKN
24-pin
20-pin
30-pin
41C4000CJ
|
PDF
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KMM594100AN
Abstract: 44C4100 KMM5941 O1040 4Mx1 44C4100AJ
Text: DRAM MODULE / 4 Mega Byte KMM594100AN Fast Page Mode 4Mx9 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM594100AN is a 4M bit x 9 Dynamic RAM high density memory module. The Samsung KMM594100AN consists of two CMOS
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OCR Scan
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KMM594100AN
24-pin
20-pin
30-pin
44C4100
KMM5941
O1040
4Mx1
44C4100AJ
|
PDF
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km41c4000cj
Abstract: ka5 capacitor
Text: DRAM MODULE 4 Mega Byte KMM594000C1 Fast Page Mode 4Mx9 DRAM SIMM , 1K Refresh , 5V G E N E R A L DESCRIPTIO N FEATURES The Samsung KMM594000C1 is a 4M bit x 9 Dynamic RAM high density memory module. The • Performance Range: Samsung KMM594000C1 consists of nine CMOS
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OCR Scan
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KMM594000C1
20-pin
30-pin
km41c4000cj
ka5 capacitor
|
PDF
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Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet FSA4UN364 2/4 B-60J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)B-60J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. FSA4UN3644B supports 4K refresh. FSA4UN3642B sup
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OCR Scan
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FSA4UN364
B-60J
16MByte
16-megabyte
36bits,
72-pin,
FSA4UN3644B
FSA4UN3642B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: November 1996 Revision 1.1 FUJITSU DATA SHEET FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. FSA4UN3644 supports 4K refresh. FSA4UN3642
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OCR Scan
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FSA4UN364
16MByte
16-megabyte
36bits,
72-pin,
FSA4UN3644
FSA4UN3642
MB814100C-
72-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: June1996 Revision 1.0 FUJITSU DATA S H E E T FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. DM4M4N360 supports 4K refresh. DM4M2N360
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OCR Scan
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June1996
FSA4UN364
16MByte
16-megabyte
36bits,
72-pin,
DM4M4N360
DM4M2N360
MB811
|
PDF
|
KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
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OCR Scan
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
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PDF
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pj 996
Abstract: Fujitsu IR c code
Text: <p Jun e l 996 Revision 1.0 HATA fíH F F T - FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. DM4M4N360 supports 4K refresh. DM4M2N360
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OCR Scan
|
FSA4UN364
16MByte
16-megabyte
36bits,
72-pin,
DM4M4N360
DM4M2N360
MB814100C-
pj 996
Fujitsu IR c code
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PDF
|
MCM94000AS70
Abstract: No abstract text available
Text: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA MCM94000A MCM9L4000A Advance Information 4Mx9 Bit Dynamic Random Access Memory Module The MCM94000AS is a 36M, dynamic random access memory DRAM module organized as 4,194,304 x 9 bits. The module is a 30-lead single-in-line memory
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OCR Scan
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MCM94000A
MCM9L4000A
MCM94000AS
30-lead
MCM54100A
4000A
9L4000A
94000AS10
9L4000AS70
MCM94000AS70
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PDF
|
MCM94000AS70
Abstract: No abstract text available
Text: MOTOROLA SC MEMORY/ASIC SIE » b3tj72Sl aafl3t,31 4 7 T M O TO R O LA •ü SEM ICO NDUCTO R v(g TEC H N IC A L DATA MCM94000A MCM9L4000A Advance Information 4Mx9 Bit Dynamic Random Access Memory Module The MCM94000AS is a 36M, dynam ic random access memory (DRAM) module
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OCR Scan
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b3tj72Sl
MCM94000A
MCM9L4000A
MCM94000AS
30-lead
MCM54100A
CM54100A
9L4000AS
MCM94000AS70
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PDF
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