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    KMM5364003BSW

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5364003BSW/BSWG KMM5364003BSW/BSWG Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364003B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364003B


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    PDF KMM5364003BSW/BSWG KMM5364003BSW/BSWG 4Mx16 KMM5364003B 4Mx36bits KMM5364003B 4Mx16bits 72-pin KMM5364003BSW

    KMM5364005BSW

    Abstract: KMM5364005BSWG
    Text: DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005B consists of two CMOS 4Mx16bits and one CMOS Quad CAS


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    PDF KMM5364005BSW/BSWG KMM5364005BSW/BSWG 4Mx16 KMM5364005B 4Mx36bits KMM5364005B 4Mx16bits 72-pin KMM5364005BSW KMM5364005BSWG

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M53640400DW0/DB0 M53640410DW0/DB0 DRAM MODULE M53640400DW0/DB0 & M53640410DW0/DB0 with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364040 1 0D is a 4Mx36bits Dynamic RAM


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    PDF M53640400DW0/DB0 M53640410DW0/DB0 M53640400DW0/DB0 M53640410DW0/DB0 M5364040 4Mx36bits 24-pin 28-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M53620400DW0/DB0 M53620410DW0/DB0 DRAM MODULE M53620400DW0/DB0 & M53620410DW0/DB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362040 1 0D is a 4Mx36bits Dynamic RAM


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    PDF M53620400DW0/DB0 M53620410DW0/DB0 M53620400DW0/DB0 M53620410DW0/DB0 M5362040 4Mx36bits 24-pin 28-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53620412DW0/DB0 M53620412DW0/DB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620412D is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620412D


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    PDF M53620412DW0/DB0 M53620412DW0/DB0 M53620412D 4Mx36bits M53620412D 24-pin 28-pin 72-pin M53620412DW0

    Untitled

    Abstract: No abstract text available
    Text: M53640400CW0/CB0 M53640410CW0/CB0 DRAM MODULE M53640400CW0/CB0 & M53640410CW0/CB0 with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364040 1 0C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M5364040(1)0C


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    PDF M53640400CW0/CB0 M53640410CW0/CB0 M53640410CW0/CB0 M5364040 4Mx36bits 24-pin 28-pin 72-pin

    64mb edo dram simm

    Abstract: K4E160411C
    Text: DRAM MODULE M53640412CW0/CB0 M53640412CW0/CB0 Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53640412C


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    PDF M53640412CW0/CB0 M53640412CW0/CB0 M53640412C 4Mx36bits M53640412C 24-pin 28-pin 72-pin M53640412CW0 64mb edo dram simm K4E160411C

    KMM5364005CK

    Abstract: KMM5364005CKG KMM5364105CK KMM5364105CKG
    Text: KMM5364005CK/CKG KMM5364105CK/CKG DRAM MODULE KMM5364005CK/CKG & KMM5364105CK/CKG Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53640 1 05CK is a 4Mx36bits Dynamic


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    PDF KMM5364005CK/CKG KMM5364105CK/CKG KMM5364105CK/CKG KMM53640 4Mx36bits 24-pin 28-pin 72-pin KMM5364005CK KMM5364005CKG KMM5364105CK KMM5364105CKG

    c60 equivalent

    Abstract: dram 4mx4 kmm5364
    Text: DRAM MODULE M53620412CW0/CB0 M53620412CW0/CB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620412C


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    PDF M53620412CW0/CB0 M53620412CW0/CB0 M53620412C 4Mx36bits M53620412C 24-pin 28-pin 72-pin M53620412CW0 c60 equivalent dram 4mx4 kmm5364

    KMM5364005BSW

    Abstract: KMM5364005BSWG
    Text: DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005B consists of two CMOS 4Mx16bits and one CMOS Quad CAS


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    PDF KMM5364005BSW/BSWG KMM5364005BSW/BSWG 4Mx16 KMM5364005B 4Mx36bits KMM5364005B 4Mx16bits 72-pin KMM5364005BSW KMM5364005BSWG

    Untitled

    Abstract: No abstract text available
    Text: M53620400DW0/DB0 M53620410DW0/DB0 DRAM MODULE M53620400DW0/DB0 & M53620410DW0/DB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362040 1 0D is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M5362040(1)0D


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    PDF M53620400DW0/DB0 M53620410DW0/DB0 M53620410DW0/DB0 M5362040 4Mx36bits 24-pin 28-pin 72-pin

    KMM5364003BSW

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5364003BSW/BSWG KMM5364003BSW/BSWG Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364003B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364003B


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    PDF KMM5364003BSW/BSWG KMM5364003BSW/BSWG 4Mx16 KMM5364003B 4Mx36bits KMM5364003B 4Mx16bits 72-pin KMM5364003BSW

    Untitled

    Abstract: No abstract text available
    Text: M53620400CW0/CB0 M53620410CW0/CB0 DRAM MODULE M53620400CW0/CB0 & M53620410CW0/CB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362040 1 0C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M5362040(1)0C


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    PDF M53620400CW0/CB0 M53620410CW0/CB0 M53620410CW0/CB0 M5362040 4Mx36bits 24-pin 28-pin 72-pin

    KMM5364003CSW

    Abstract: KMM5364003CSWG
    Text: DRAM MODULE KMM5364003CSW/CSWG 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5364003CSW/CSWG DRAM MODULE


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    PDF KMM5364003CSW/CSWG 4Mx36 4Mx16 KMM5364003CSW/CSWG KMM5364003C 4Mx36bits KMM5364003C KMM5364003CSW KMM5364003CSWG

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53640405CY0/CT0-C 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53640405CY0/CT0-C DRAM MODULE


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    PDF M53640405CY0/CT0-C 4Mx36 4Mx16 M53640405CY0/CT0-C 4Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53620405BY0/BT0-C 4Byte 4Mx36 SIMM PDpin 4Mx16 & Quad CAS 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M53620405BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.


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    PDF M53620405BY0/BT0-C 4Mx36 4Mx16 M53620405BY0/BT0-C 4Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53620405CY0/CT0-C 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53620405CY0/CT0-C DRAM MODULE


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    PDF M53620405CY0/CT0-C 4Mx36 4Mx16 M53620405CY0/CT0-C 4Mx36bits

    KMM5364005CSW

    Abstract: KMM5364005CSWG
    Text: DRAM MODULE KMM5364005CSW/CSWG 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5364005CSW/CSWG DRAM MODULE


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    PDF KMM5364005CSW/CSWG 4Mx36 4Mx16 KMM5364005CSW/CSWG KMM5364005C 4Mx36bits KMM5364005C KMM5364005CSW KMM5364005CSWG

    capacitor taa

    Abstract: No abstract text available
    Text: DRAM MODULE M53640405BY0/BT0-C 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M53640405BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


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    PDF M53640405BY0/BT0-C 4Mx36 4Mx16 M53640405BY0/BT0-C 4Mx36bits capacitor taa

    ic 74142

    Abstract: No abstract text available
    Text: Preliminary KMM5364003ASW/ASWG DRAM MODULE KMM5364003ASW/ASWG Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364003A is a 4Mx36bits Dynamic RAM ~ Part Identification high density memory module. The Samsung KMM5364003A


    OCR Scan
    PDF KMM5364003ASW/ASWG KMM5364003ASW/ASWG 4Mx16 KMM5364003A 4Mx36bits 4Mx16bits 72-pin KMM5364003ASW ic 74142

    KM416C4104AS

    Abstract: KM416C4104a KM44C4005BS
    Text: Preliminary KMM5364005ASW/ASWG DRAM MODULE KMM5364005ASW/ASWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005A is a 4Mx36bits Dynamic RAM - Part Identification high density memory module. The Samsung KMM5364005A


    OCR Scan
    PDF KMM5364005ASW/ASWG KMM5364005ASW/ASWG 4Mx16 KMM5364005A 4Mx36bits 4Mx16bits 72-pin KMM5364005ASW KM416C4104AS KM416C4104a KM44C4005BS

    EZ 720

    Abstract: No abstract text available
    Text: KMM5364005CK/CKG KMM5364105CK/CKG DRAM MODULE KMM5364005CK/CKG & KMM5364105CK/CKG Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53640 1 05CK is a 4Mx36bits Dynamic


    OCR Scan
    PDF KMM5364005CK/CKG KMM5364105CK/CKG KMM5364005CK/CKG KMM5364105CK/CKG KMM53640 4Mx36bits 24-pin 28-pin 72-pin EZ 720

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005B consists of two CMOS 4Mx16bits and one CMOS Quad CAS


    OCR Scan
    PDF KMM5364005BSW/BSWG KMM5364005BSW/BSWG 4Mx16 KMM5364005B 4Mx36bits 4Mx16bits 72-pin KMM5364005BSW

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5364003BSW/BSWG KMM5364003BSW/BSWG Fast Page Mode 4M X 36 DRAM SIMM Using 4M x16 & Q uad CAS 4M x4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364003B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364003B


    OCR Scan
    PDF KMM5364003BSW/BSWG KMM5364003BSW/BSWG KMM5364003B 4Mx36bits KMM5364003B 4Mx16bits 72-pin KMM5364003Bis