KMM5364003BSW
Abstract: No abstract text available
Text: DRAM MODULE KMM5364003BSW/BSWG KMM5364003BSW/BSWG Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364003B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364003B
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KMM5364003BSW/BSWG
KMM5364003BSW/BSWG
4Mx16
KMM5364003B
4Mx36bits
KMM5364003B
4Mx16bits
72-pin
KMM5364003BSW
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PDF
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KMM5364005BSW
Abstract: KMM5364005BSWG
Text: DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005B consists of two CMOS 4Mx16bits and one CMOS Quad CAS
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Original
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KMM5364005BSW/BSWG
KMM5364005BSW/BSWG
4Mx16
KMM5364005B
4Mx36bits
KMM5364005B
4Mx16bits
72-pin
KMM5364005BSW
KMM5364005BSWG
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary M53640400DW0/DB0 M53640410DW0/DB0 DRAM MODULE M53640400DW0/DB0 & M53640410DW0/DB0 with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364040 1 0D is a 4Mx36bits Dynamic RAM
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M53640400DW0/DB0
M53640410DW0/DB0
M53640400DW0/DB0
M53640410DW0/DB0
M5364040
4Mx36bits
24-pin
28-pin
72-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary M53620400DW0/DB0 M53620410DW0/DB0 DRAM MODULE M53620400DW0/DB0 & M53620410DW0/DB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362040 1 0D is a 4Mx36bits Dynamic RAM
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M53620400DW0/DB0
M53620410DW0/DB0
M53620400DW0/DB0
M53620410DW0/DB0
M5362040
4Mx36bits
24-pin
28-pin
72-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53620412DW0/DB0 M53620412DW0/DB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620412D is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620412D
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M53620412DW0/DB0
M53620412DW0/DB0
M53620412D
4Mx36bits
M53620412D
24-pin
28-pin
72-pin
M53620412DW0
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Untitled
Abstract: No abstract text available
Text: M53640400CW0/CB0 M53640410CW0/CB0 DRAM MODULE M53640400CW0/CB0 & M53640410CW0/CB0 with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364040 1 0C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M5364040(1)0C
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M53640400CW0/CB0
M53640410CW0/CB0
M53640410CW0/CB0
M5364040
4Mx36bits
24-pin
28-pin
72-pin
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PDF
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64mb edo dram simm
Abstract: K4E160411C
Text: DRAM MODULE M53640412CW0/CB0 M53640412CW0/CB0 Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53640412C
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M53640412CW0/CB0
M53640412CW0/CB0
M53640412C
4Mx36bits
M53640412C
24-pin
28-pin
72-pin
M53640412CW0
64mb edo dram simm
K4E160411C
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KMM5364005CK
Abstract: KMM5364005CKG KMM5364105CK KMM5364105CKG
Text: KMM5364005CK/CKG KMM5364105CK/CKG DRAM MODULE KMM5364005CK/CKG & KMM5364105CK/CKG Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53640 1 05CK is a 4Mx36bits Dynamic
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KMM5364005CK/CKG
KMM5364105CK/CKG
KMM5364105CK/CKG
KMM53640
4Mx36bits
24-pin
28-pin
72-pin
KMM5364005CK
KMM5364005CKG
KMM5364105CK
KMM5364105CKG
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c60 equivalent
Abstract: dram 4mx4 kmm5364
Text: DRAM MODULE M53620412CW0/CB0 M53620412CW0/CB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620412C
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M53620412CW0/CB0
M53620412CW0/CB0
M53620412C
4Mx36bits
M53620412C
24-pin
28-pin
72-pin
M53620412CW0
c60 equivalent
dram 4mx4
kmm5364
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PDF
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KMM5364005BSW
Abstract: KMM5364005BSWG
Text: DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005B consists of two CMOS 4Mx16bits and one CMOS Quad CAS
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Original
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KMM5364005BSW/BSWG
KMM5364005BSW/BSWG
4Mx16
KMM5364005B
4Mx36bits
KMM5364005B
4Mx16bits
72-pin
KMM5364005BSW
KMM5364005BSWG
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PDF
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Untitled
Abstract: No abstract text available
Text: M53620400DW0/DB0 M53620410DW0/DB0 DRAM MODULE M53620400DW0/DB0 & M53620410DW0/DB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362040 1 0D is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M5362040(1)0D
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Original
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M53620400DW0/DB0
M53620410DW0/DB0
M53620410DW0/DB0
M5362040
4Mx36bits
24-pin
28-pin
72-pin
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PDF
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KMM5364003BSW
Abstract: No abstract text available
Text: DRAM MODULE KMM5364003BSW/BSWG KMM5364003BSW/BSWG Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364003B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364003B
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Original
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KMM5364003BSW/BSWG
KMM5364003BSW/BSWG
4Mx16
KMM5364003B
4Mx36bits
KMM5364003B
4Mx16bits
72-pin
KMM5364003BSW
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PDF
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Untitled
Abstract: No abstract text available
Text: M53620400CW0/CB0 M53620410CW0/CB0 DRAM MODULE M53620400CW0/CB0 & M53620410CW0/CB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362040 1 0C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M5362040(1)0C
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Original
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M53620400CW0/CB0
M53620410CW0/CB0
M53620410CW0/CB0
M5362040
4Mx36bits
24-pin
28-pin
72-pin
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PDF
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KMM5364003CSW
Abstract: KMM5364003CSWG
Text: DRAM MODULE KMM5364003CSW/CSWG 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5364003CSW/CSWG DRAM MODULE
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KMM5364003CSW/CSWG
4Mx36
4Mx16
KMM5364003CSW/CSWG
KMM5364003C
4Mx36bits
KMM5364003C
KMM5364003CSW
KMM5364003CSWG
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53640405CY0/CT0-C 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53640405CY0/CT0-C DRAM MODULE
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M53640405CY0/CT0-C
4Mx36
4Mx16
M53640405CY0/CT0-C
4Mx36bits
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53620405BY0/BT0-C 4Byte 4Mx36 SIMM PDpin 4Mx16 & Quad CAS 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M53620405BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.
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M53620405BY0/BT0-C
4Mx36
4Mx16
M53620405BY0/BT0-C
4Mx36bits
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53620405CY0/CT0-C 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53620405CY0/CT0-C DRAM MODULE
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Original
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M53620405CY0/CT0-C
4Mx36
4Mx16
M53620405CY0/CT0-C
4Mx36bits
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PDF
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KMM5364005CSW
Abstract: KMM5364005CSWG
Text: DRAM MODULE KMM5364005CSW/CSWG 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5364005CSW/CSWG DRAM MODULE
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KMM5364005CSW/CSWG
4Mx36
4Mx16
KMM5364005CSW/CSWG
KMM5364005C
4Mx36bits
KMM5364005C
KMM5364005CSW
KMM5364005CSWG
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PDF
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capacitor taa
Abstract: No abstract text available
Text: DRAM MODULE M53640405BY0/BT0-C 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M53640405BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.
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Original
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M53640405BY0/BT0-C
4Mx36
4Mx16
M53640405BY0/BT0-C
4Mx36bits
capacitor taa
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PDF
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ic 74142
Abstract: No abstract text available
Text: Preliminary KMM5364003ASW/ASWG DRAM MODULE KMM5364003ASW/ASWG Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364003A is a 4Mx36bits Dynamic RAM ~ Part Identification high density memory module. The Samsung KMM5364003A
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OCR Scan
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KMM5364003ASW/ASWG
KMM5364003ASW/ASWG
4Mx16
KMM5364003A
4Mx36bits
4Mx16bits
72-pin
KMM5364003ASW
ic 74142
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PDF
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KM416C4104AS
Abstract: KM416C4104a KM44C4005BS
Text: Preliminary KMM5364005ASW/ASWG DRAM MODULE KMM5364005ASW/ASWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005A is a 4Mx36bits Dynamic RAM - Part Identification high density memory module. The Samsung KMM5364005A
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OCR Scan
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KMM5364005ASW/ASWG
KMM5364005ASW/ASWG
4Mx16
KMM5364005A
4Mx36bits
4Mx16bits
72-pin
KMM5364005ASW
KM416C4104AS
KM416C4104a
KM44C4005BS
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PDF
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EZ 720
Abstract: No abstract text available
Text: KMM5364005CK/CKG KMM5364105CK/CKG DRAM MODULE KMM5364005CK/CKG & KMM5364105CK/CKG Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53640 1 05CK is a 4Mx36bits Dynamic
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OCR Scan
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KMM5364005CK/CKG
KMM5364105CK/CKG
KMM5364005CK/CKG
KMM5364105CK/CKG
KMM53640
4Mx36bits
24-pin
28-pin
72-pin
EZ 720
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005B consists of two CMOS 4Mx16bits and one CMOS Quad CAS
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OCR Scan
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KMM5364005BSW/BSWG
KMM5364005BSW/BSWG
4Mx16
KMM5364005B
4Mx36bits
4Mx16bits
72-pin
KMM5364005BSW
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5364003BSW/BSWG KMM5364003BSW/BSWG Fast Page Mode 4M X 36 DRAM SIMM Using 4M x16 & Q uad CAS 4M x4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364003B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364003B
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OCR Scan
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KMM5364003BSW/BSWG
KMM5364003BSW/BSWG
KMM5364003B
4Mx36bits
KMM5364003B
4Mx16bits
72-pin
KMM5364003Bis
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PDF
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