Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    4MX32 DRAM SIMM Search Results

    4MX32 DRAM SIMM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030JL - TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    CDCV857ADGGR Texas Instruments 2.5V SSTL-II Phase Lock Loop Clock Driver for Double Data-Rate Synchronous DRAM Applications 48-TSSOP 0 to 85 Visit Texas Instruments

    4MX32 DRAM SIMM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HYM532410C M-Series 4Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532410C M-Series is a 4Mx32-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling


    Original     		HYM532410C 4Mx32 4Mx32-bit HY5117400C HYM532410CM HYM532410CMG 72-Pin PDF

    HY5117404C

    Abstract: HYM532414C HYM532414CM HYM532414CMG DEC-97
    Text: HYM532414C M-Series 4Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414C M-Series is a 4Mx32-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF


    Original     		HYM532414C 4Mx32 4Mx32-bit HY5117404C HYM532414CM HYM532414CMG 72-Pin DEC-97 PDF

    HYM532414BM

    Abstract: HY5117404B
    Text: HYM532414B M-Series 4Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414B M-Series is a 4Mx32-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF


    Original     		HYM532414B 4Mx32 4Mx32-bit HY5117404B HYM532414BM HYM532414BMG 72-Pin PDF

    HYM532410BM

    Abstract: HY5117400B HYM532410B HYM532410BMG HYM532410
    Text: HYM532410B M-Series 4Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532410B M-Series is a 4Mx32-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling


    Original     		HYM532410B 4Mx32 4Mx32-bit HY5117400B HYM532410BM HYM532410BMG 72-Pin HYM532410 PDF

    HYM532410CM

    Abstract: HY5117400C HYM532410C HYM532410CMG
    Text: HYM532410C M-Series 4Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532410C M-Series is a 4Mx32-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling


    Original     		HYM532410C 4Mx32 4Mx32-bit HY5117400C HYM532410CM HYM532410CMG 72-Pin PDF

    HYM532414CM

    Abstract: HY5117404C HYM532414C HYM532414CMG HYM532414
    Text: HYM532414C M-Series 4Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414C M-Series is a 4Mx32-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF


    Original     		HYM532414C 4Mx32 4Mx32-bit HY5117404C HYM532414CM HYM532414CMG 72-Pin HYM532414 PDF

    KMM5324004CSW

    Abstract: KMM5324004CSWG
    Text: DRAM MODULE KMM5324004CSW/CSWG 4Byte 4Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5324004CSW/CSWG DRAM MODULE KMM5324004CSW/CSWG


    Original     		KMM5324004CSW/CSWG 4Mx32 4Mx16 KMM5324004CSW/CSWG 4Mx16, KMM5324004C 4Mx32bits KMM5324004C KMM5324004CSW KMM5324004CSWG PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5324000CSW/CSWG 4Byte 4Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5324000CSW/CSWG DRAM MODULE KMM5324000CSW/CSWG


    Original     		KMM5324000CSW/CSWG 4Mx32 4Mx16 KMM5324000CSW/CSWG 4Mx16, KMM5324000C 4Mx32bits 4Mx16bits PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53230404CY0/CT0-C 4Byte 4Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53230404CY0/CT0-C DRAM MODULE M53230404CY0/CT0-C


    Original     		M53230404CY0/CT0-C 4Mx32 4Mx16 M53230404CY0/CT0-C 4Mx16, 4Mx32bits PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53210404CY0/CT0-C 4Byte 4Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53210404CY0/CT0-C DRAM MODULE M53210404CY0/CT0-C


    Original     		M53210404CY0/CT0-C 4Mx32 4Mx16 M53210404CY0/CT0-C 4Mx16, 4Mx32bits 4Mx16bits PDF

    KM44C4100AJ

    Abstract: KM44C4100A KMM5324100AV
    Text: DRAM MODULE_ j _ 16 Mega Byte KMM53241OOAV/AVG Fast Page Mode / 4Mx32 DRAM SIMM , 2K Refresh , 5V / Using 16M DRAM with 400 mil Package . GENERAL DESCRIPTION FEATURES The Samsung KMM53241OOAV is a 4M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		KMM53241OOAV/AVG 4Mx32 KMM53241OOAV KMM5324100AV 24-pin 72-pin KM44C4100AJ KM44C4100A PDF

    Untitled

    Abstract: No abstract text available
    Text: -H YU N D AI > • H Y M 5 3 2 4 1 4 B M - S e r ie s 4MX32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414B M-Series is a 4Mx32-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1 h F and 0.01 nF


    OCR Scan     		4MX32 HYM532414B 4Mx32-bit HY5117404B HYM532414BM HYM532414BMG 72-Pin 256ms PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5324000AK/AKG Fast Page Mode 4Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 300 mil Package . GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5324000AK is a 4M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		KMM5324000AK/AKG 4Mx32 KMM5324000AK 24-pin 72-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: KM M5324000B K/B KG KMM53241OOBK/BKG DRAM MODULE KMM5324000B K/B KG & KMM53241 OOBK/BKG Fast Page Mode 4Mx32 DRAM SIMM, 4K & 2K Refresh, using 16M DRAM with 300 mil Package FEATURES GENERAL DESCRIPTION • Part Identification The Samsung KMM53240 1 00BK is a 4M bit x 32


    OCR Scan     		M5324000B KMM53241OOBK/BKG KMM5324000B KMM53241 4Mx32 KMM53240 KMM5324000BK cycles/64ms KMM5324000BKG PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE / 16 Mega Byte KM M5324000CV/CVG Fast Page Mode 4Mx32 DRAM SIMM Using 4Mx1 DRAM, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5324000CV is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5324000CV consists of thirty two CMOS 4Mx1bit DRAMs in 20-pin SOJ packages


    OCR Scan     		M5324000CV/CVG 4Mx32 KMM5324000CV 20-pin 72-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53210404BY0/BT0-C 4Byte 4Mx32 SIMM 4Mx16 base Revision 0.1 June 1998 DRAM MODULE M53210404BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		M53210404BY0/BT0-C 4Mx32 4Mx16 M53210404BY0/BT0-C 4Mx16, 4Mx32bits PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53230404BY0/BT0-C 4Byte 4Mx32 SIMM 4Mx16 base Revision 0.1 June 1998 DRAM MODULE M53230404BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		M53230404BY0/BT0-C 4Mx32 4Mx16 M53230404BY0/BT0-C 4Mx16, 4Mx32bits PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM5324004BK/BKG KMM5324104BK/BKG DRAM MODULE KMM5324004BK/BKG & KMM5324104BK/BKG Fast Page with EDO Mode 4Mx32 DRAM SIMM, 4K & 2K Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM53240 1 04BK is a 4M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		KMM5324004BK/BKG KMM5324104BK/BKG KMM5324104BK/BKG 4Mx32 KMM53240 24-pin KMM5324004BK cycles/64ms PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KM M5324000AV/AVG Fast Page Mode 4Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package . G EN E R A L D ES C R IPTIO N FEATURES • Performance Range: The Sam sung KMM5324000AV is a 4M bit x 32 tRAC 50ns 60ns 70ns 80ns


    OCR Scan     		M5324000AV/AVG 4Mx32 KMM5324000AV 5324000AV 24-pin 72-pin M5324000AV PDF

    M53241

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte X KMM53241OOAK/AKG Fast Page Mode 4Mx32 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package . GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5324100AK is a 4M bit x 32 tRAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory module. The


    OCR Scan     		KMM53241OOAK/AKG 4Mx32 KMM5324100AK 24-pin 72-pin 5324100AK M5324100AK KM44C4100AK M53241 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KM M5324000AV/AVG Fast Page Mode 4Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package . G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM5324000AV is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5324000AV consists of eight CMOS


    OCR Scan     		M5324000AV/AVG 4Mx32 KMM5324000AV 24-pin 72-pin PDF

    44C4104

    Abstract: KMM5324004BK kmm5324104 44C4104BK EZ 720
    Text: KMM5324004BK/BKG KMM5324104BK/BKG DRAM MODULE KMM5324004BK/BKG & KMM5324104BK/BKG Fast Page with EDO Mode 4Mx32 DRAM SIMM, 4K & 2K Refresh GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM53240 1 04BK is a 4M bit x 32 Dynam ic RAM h gh density m em ory module. The


    OCR Scan     		KMM5324004BK/BKG KMM5324104BK/BKG KMM5324004BK/BKG KMM5324104BK/BKG 4Mx32 KMM53240 24-pin 72-pin KMM5324004BK 44C4104 KMM5324004BK kmm5324104 44C4104BK EZ 720 PDF

    1CE13-10-DEC94

    Abstract: HY5117400A
    Text: HYM532410A M-Series 4Mx32-bit CMOS DRAM MODULE DESCRIPTION The HYM532410A is a 4M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted


    Original     		HYM532410A 4Mx32-bit 32-bit HY5117400A HYM532410AAM/ASLM/ATM/ASLTM HYM532410AMG/ASLMG/ATMG/ASLTMG 1CE13-10-DEC94 72pin 1CE13-10-DEC94 HY5117400A PDF

    Untitled

    Abstract: No abstract text available
    Text: - « T U H D A I • HYM532414C M-Series 4MX32 bit EOO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414C M-Series is a 4M x32-bit Extended Data Out mode CMOS DRAM m odule consisting of eight HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01uF


    OCR Scan     		HYM532414C 4MX32 x32-bit HY5117404C 532414CM HYM532414CMG 72-Pin 256ms PDF