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    4MX32 BGA Search Results

    4MX32 BGA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MPC860PZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC860PVR80D4 Rochester Electronics LLC 32-BIT, 80MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC855TCZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC860TCZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC860ENZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy

    4MX32 BGA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4MX32

    Abstract: a106a7
    Text: WED3DL324V 4Mx32 SDRAM FEATURES DESCRIPTION n 53% Space Savings vs. Monolithic Solution The WED3DL324V is a 4Mx32 Synchronous DRAM configured as 4x1Mx32. The SDRAM BGA is constructed with two 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and


    Original     		PDF WED3DL324V 4Mx32 WED3DL324V 4x1Mx32. 4Mx16 133MHz, 125MHz 100MHz. a106a7

    TMS320C6201

    Abstract: TMS320C6701 WED9LC6816V TMS320C6000
    Text: WED9LC6816V White Electronic Designs 256Kx32 SSRAM/4Mx32 SDRAM External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION n Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array


    Original     		PDF WED9LC6816V 256Kx32 SSRAM/4Mx32 TMS320C6000 WED9LC6816V 4Mx32 4Mx16 TMS320C6201 TMS320C6201 TMS320C6701

    Untitled

    Abstract: No abstract text available
    Text: WED9LC6816V 256Kx32 SSRAM/4Mx32 SDRAM – External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION  Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array constructed with


    Original     		PDF WED9LC6816V 256Kx32 SSRAM/4Mx32 TMS320C6000 WED9LC6816V 4Mx32 4Mx16 TMS320C6201 TMS320C6201

    Untitled

    Abstract: No abstract text available
    Text: WED9LC6816V 256Kx32 SSRAM/4Mx32 SDRAM – External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION  Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array constructed with


    Original     		PDF WED9LC6816V 256Kx32 SSRAM/4Mx32 TMS320C6000 WED9LC6816V 4Mx32 4Mx16 TMS320C6201 TMS320C6201

    Untitled

    Abstract: No abstract text available
    Text: CMS4A32LAx–75Ex 128M 4Mx32 Low Power SDRAM Revision 0.6 May. 2007 Rev. 0.6, May. ‘07 CMS4A32LAx–75Ex Document Title 128M(4Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1


    Original     		PDF CMS4A32LAxâ 4Mx32) 160ns 350uA 400uA

    TMS320C6000

    Abstract: TMS320C6202 ED07
    Text: WED3DL324V 4Mx32 SDRAM ADVANCED* FEATURES DESCRIPTION • 53% Space Savings vs. Monolithic Solution The WED3DL324V is a 4Mx32 Synchronous DRAM configured as 4x1Mx32. The SDRAM BGA is constructed with two 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in


    Original     		PDF WED3DL324V 4Mx32 WED3DL324V 4x1Mx32. 4Mx16 TMS320C6000 TMS320C6201/C6701and TMS320C6202, TMS320C6202 ED07

    TMS320C6000

    Abstract: TMS320C6201 TMS320C6701 WED9LC6816V
    Text: WED9LC6816V White Electronic Designs 256Kx32 SSRAM/4Mx32 SDRAM EXTERNAL MEMORY SOLUTION FOR TEXAS INSTRUMENTS TMS320C6000 DSP DESCRIPTION FEATURES The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array constructed with one 256K x 32 SBSRAM and two 4Mx16


    Original     		PDF WED9LC6816V 256Kx32 SSRAM/4Mx32 TMS320C6000 WED9LC6816V 4Mx32 4Mx16 TMS320C6201 TMS320C6701

    bt 2323

    Abstract: d 5072 OP 778 4303 303 3200 AP 309 d 5072 transistor 62 AP 804 L 083 4MX32 WED3DL324V10BI
    Text: WED3DL324V White Electronic Designs 4Mx32 SDRAM FEATURES n n n n n n n DESCRIPTION 53% Space Savings vs. Monolithic Solution The WED3DL324V is a 4Mx32 Synchronous DRAM configured as 4x1Mx32. The SDRAM BGA is constructed with two 4Mx16 SDRAM die mounted on a multi-layer


    Original     		PDF WED3DL324V 4Mx32 WED3DL324V 4x1Mx32. 4Mx16 133MHz, 125MHz 100MHz. bt 2323 d 5072 OP 778 4303 303 3200 AP 309 d 5072 transistor 62 AP 804 L 083 WED3DL324V10BI

    Untitled

    Abstract: No abstract text available
    Text: WED9LC6816V White Electronic Designs 256Kx32 SSRAM/4Mx32 SDRAM External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION n Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array


    Original     		PDF WED9LC6816V 256Kx32 SSRAM/4Mx32 TMS320C6000 WED9LC6816V 4Mx32 4Mx16 TMS320C6201 TMS320C6701

    BC117

    Abstract: 4MX32-SDRAM ts 4141 TMS320C6000 TMS320C6201 TMS320C6701 WED9LC6816V 320C6X
    Text: WED9LC6816V White Electronic Designs 256Kx32 SSRAM/4Mx32 SDRAM External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION n Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array


    Original     		PDF WED9LC6816V 256Kx32 SSRAM/4Mx32 TMS320C6000 WED9LC6816V 4Mx32 4Mx16 TMS320C6201 TMS320C6201 BC117 4MX32-SDRAM ts 4141 TMS320C6701 320C6X

    IS42VM81600E

    Abstract: IS42VM16800E IS42VM32400E-75TL IS42VM16800E-75BLI
    Text: IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES JUNE 2011 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42VM81600E IS42VM16800E IS42VM32400E IS45VM81600E IS45VM16800E IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb IS42VM32400E-75TL IS42VM16800E-75BLI

    SM81600E

    Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
    Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42SM81600E IS42SM16800E IS42SM32400E IS42RM81600E IS42RM16800E IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb SM81600E IS42SM16800E-7TLI IS42SM32400E-7T IS42SM16800E-7BLI

    IS42SM16800E-6BLI

    Abstract: No abstract text available
    Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM DECEMBER 2010 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42SM81600E IS42SM16800E IS42SM32400E IS42RM81600E IS42RM16800E IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb IS42SM16800E-6BLI

    IS42S16160B(D)-7TL

    Abstract: No abstract text available
    Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 FEATURES DESCRIPTION • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42SM81600E IS42SM16800E IS42SM32400E IS42RM81600E IS42RM16800E IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb IS42S16160B(D)-7TL

    IS42VM16800E

    Abstract: No abstract text available
    Text: IS42VM81600E / IS42VM16800E / IS42VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES Advanced Information FEBRUARY 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42VM81600E IS42VM16800E IS42VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb

    IS43R32400D-5BLI

    Abstract: ISSI 346
    Text: IS43R32400D 4Mx32 SEPTEMBER 2011 128Mb DDR SDRAM FEATURES DEVICE OVERVIEW • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe DQS is transmitted/ received with data, to be used in capturing data at the receiver


    Original     		PDF IS43R32400D 4Mx32 128Mb IS43R32400D-4BL IS43R32400D-5BL IS43R32400D-6BL 144-ball IS43R32400D-4BLI IS43R32400D-5BLI ISSI 346

    Untitled

    Abstract: No abstract text available
    Text: IS43R16800D, IS43R32400D PRELIMINARY INFORMATION 4Mx32, 8Mx16 MARCH 2009 128Mb DDR SDRAM FEATURES DEVICE OVERVIEW • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe DQS is transmitted/ received with data, to be used in capturing data


    Original     		PDF IS43R16800D, IS43R32400D 4Mx32, 8Mx16 128Mb IS43R32400D-4BLI IS43R32400D-5BLI IS43R32400D-6BLI 144-ball

    Untitled

    Abstract: No abstract text available
    Text: WED9LC6416V 128Kx32 SSRAM/4Mx32 SDRAM Advanced* External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION • Clock speeds: • SSRAM: 200, 166,150, and 133 MHz • SDRAMs: 125 and 100 MHz The WED9LC6416VxxBC is a 3.3V, 128K x 32 Synchronous


    Original     		PDF WED9LC6416V 128Kx32 SSRAM/4Mx32 TMS320C6201 TMS320C6701 MO-163 TMS320C6000 WED9LC6416VxxBC 4Mx32 4Mx16

    Untitled

    Abstract: No abstract text available
    Text: IS43LR16800D, IS43LR32400D 4Mx32, 8Mx16 128Mb Mobile DDR SDRAM FEATURES: • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe DQS is transmitted/ received with data, to be used in capturing data at the receiver


    Original     		PDF IS43LR16800D, IS43LR32400D 4Mx32, 8Mx16 128Mb IS43LR32400D-5BL IS43LR32400D-6BL IS43LR32400D-75BL 90-ball

    Untitled

    Abstract: No abstract text available
    Text: IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM JUNE 2011 FEATURES DESCRIPTION • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42VM81600E IS42VM16800E IS42VM32400E IS45VM81600E IS45VM16800E IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb

    Untitled

    Abstract: No abstract text available
    Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES Advanced Information AUGUST 2008 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42SM81600E IS42SM16800E IS42SM32400E IS42RM81600E IS42RM16800E IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb

    IS45VM16800E-75BLA2

    Abstract: IS42VM16800E-75BLI nc1473 IS42VM32400E-75BLI IS42VM16800E 1M x 32 x 4
    Text: IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES Preliminary Information NOVEMBER 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42VM81600E IS42VM16800E IS42VM32400E IS45VM81600E IS45VM16800E IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb IS45VM16800E-75BLA2 IS42VM16800E-75BLI nc1473 IS42VM32400E-75BLI 1M x 32 x 4

    IS43R16800E

    Abstract: No abstract text available
    Text: IS43/46R16800E, IS43/46R32400E 4Mx32, 8Mx16 128Mb DDR SDRAM FEBRUARY 2013 FEATURES DEVICE OVERVIEW •฀ VDD฀and฀VDDQ:฀2.5V฀±฀0.2V฀ •฀ SSTL_2฀compatible฀I/O •฀ Double-data฀rate฀architecture;฀two฀data฀transfers฀ per clock cycle


    Original     		PDF IS43/46R16800E, IS43/46R32400E 4Mx32, 8Mx16 128Mb 60-Ball) IS43R16800E

    SDA10

    Abstract: No abstract text available
    Text: WED9LC6816V 256Kx32 SSRAM/4Mx32 SDRAM Advanced* External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION • Clock speeds: • SSRAM: 200, 166,150, and 133 MHz • SDRAMs: 125 and 100 MHz The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline


    Original     		PDF WED9LC6816V 256Kx32 SSRAM/4Mx32 TMS320C6201 TMS320C6701 MO-163 TMS320C6000 WED9LC6816V 4Mx32 4Mx16 SDA10