tle 4417
Abstract: potentiometer YH 504 8 pin 4435 ic voltage out and in D 4206 AED02260 TLE4206 TLE motor driver JESD 51-2 tle+4417
Text: TLE 4206-4G H-Bridge Driver Headlight Beam Controller Data Sheet Rev. 1.0, 2010-08-05 Automotive Power TLE 4206-4G Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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4206-4G
tle 4417
potentiometer YH 504
8 pin 4435 ic voltage out and in
D 4206
AED02260
TLE4206
TLE motor driver
JESD 51-2
tle+4417
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marking code g1
Abstract: mil 43
Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V
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Si5515CDC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking code g1
mil 43
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Untitled
Abstract: No abstract text available
Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V
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Si5515CDC
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V
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Si5515CDC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Si5515CDC
Abstract: No abstract text available
Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V
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Si5515CDC
2002/95/EC
11-Mar-11
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Si5515CDC
Abstract: No abstract text available
Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V
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Si5515CDC
2002/95/EC
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V
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Si5515CDC
2002/95/EC
11-Mar-11
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SEMINAR ON 4G TECHNOLOGY
Abstract: HDMI TO VGA MONITOR PINOUT LTE MIMO repeater lte RF Transceiver MIMO 2x2 catalog 4000 single family smd cmos VGA TO HDMI PINOUT LM97593 GSM hsdpa repeater circuit GSM 3g repeater circuit dual gsm repeater
Text: Wireless Infrastructure 2G/3G/4G Base Station Solutions Guide national.com/wireless 2Q 2008 1Q 2008 Solutions for 2G, 2.5G, 3G, LTE and 4G wireless mobile base stations e.g. GSM/EDGE/ GPRS, W-CDMA, CDMA2000, TD-SCDMA, WiMAX as well as other applications
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CDMA2000,
SEMINAR ON 4G TECHNOLOGY
HDMI TO VGA MONITOR PINOUT
LTE MIMO repeater
lte RF Transceiver MIMO 2x2
catalog 4000 single family smd cmos
VGA TO HDMI PINOUT
LM97593
GSM hsdpa repeater circuit
GSM 3g repeater circuit
dual gsm repeater
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schematic diagram of transistor amplifier 5v to 6
Abstract: IN4004 IN4004 datasheet AN-181 DEM-OPA660-1GC DEM-OPA660-4G OPA660 OPA660AU IN4004 diode IN4004 diodes
Text: DEM-OPA660-4G EVALUATION FIXTURE FEATURES APPLICATIONS ● EASY AND FAST PERFORMANCE TESTING ● COMPONENTS INCOME CONTROL ● SHOWS OPTIMIZED BOARD LAYOUT ● CIRCUIT DESIGNS ● PERFORMANCE CHECKS ● REPLACES SELF-MADE BOARDS DESCRIPTION The unassembled demo board DEM-OPA660-4G contains three different configurations of the OPA660
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DEM-OPA660-4G
DEM-OPA660-4G
OPA660
DEM-OPA660-41G)
DEM-OPA660-42G)
DEM-OPA660-43G)
OPA660AU
OPA660,
schematic diagram of transistor amplifier 5v to 6
IN4004
IN4004 datasheet
AN-181
DEM-OPA660-1GC
OPA660
IN4004 diode
IN4004 diodes
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Untitled
Abstract: No abstract text available
Text: LM3243 www.ti.com SNVS782B – OCTOBER 2010 – REVISED FEBRUARY 2013 LM3243 High-Current Step-Down Converter for 2G/3G/4G RF Power Amplifiers Check for Samples: LM3243 FEATURES DESCRIPTION • The LM3243 is a DC-DC converter optimized for powering multi-mode 2G/3G/4G RF power amplifiers
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LM3243
SNVS782B
LM3243
16-bump
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CL05A106MQ5NUN
Abstract: TFM201610 TFM201610-1R5M CL03A105 GRM185R60J106M CL05A CL03A105MQ3CSN CL03A10 DFE201610C CL05A106
Text: LM3243 www.ti.com SNVS782B – OCTOBER 2010 – REVISED FEBRUARY 2013 LM3243 High-Current Step-Down Converter for 2G/3G/4G RF Power Amplifiers Check for Samples: LM3243 FEATURES DESCRIPTION • The LM3243 is a DC-DC converter optimized for powering multi-mode 2G/3G/4G RF power amplifiers
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LM3243
SNVS782B
LM3243
16-bump
CL05A106MQ5NUN
TFM201610
TFM201610-1R5M
CL03A105
GRM185R60J106M
CL05A
CL03A105MQ3CSN
CL03A10
DFE201610C
CL05A106
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DFE201610
Abstract: DFE20
Text: LM3243 www.ti.com SNVS782B – OCTOBER 2010 – REVISED FEBRUARY 2013 LM3243 High-Current Step-Down Converter for 2G/3G/4G RF Power Amplifiers Check for Samples: LM3243 FEATURES DESCRIPTION • The LM3243 is a DC-DC converter optimized for powering multi-mode 2G/3G/4G RF power amplifiers
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LM3243
SNVS782B
LM3243
DFE201610
DFE20
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Untitled
Abstract: No abstract text available
Text: LM3243 www.ti.com SNVS782B – OCTOBER 2010 – REVISED FEBRUARY 2013 LM3243 High-Current Step-Down Converter for 2G/3G/4G RF Power Amplifiers Check for Samples: LM3243 FEATURES DESCRIPTION • The LM3243 is a DC-DC converter optimized for powering multi-mode 2G/3G/4G RF power amplifiers
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LM3243
SNVS782B
LM3243
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Untitled
Abstract: No abstract text available
Text: LM3243 www.ti.com SNVS782B – OCTOBER 2010 – REVISED FEBRUARY 2013 LM3243 High-Current Step-Down Converter for 2G/3G/4G RF Power Amplifiers Check for Samples: LM3243 FEATURES DESCRIPTION • The LM3243 is a DC-DC converter optimized for powering multi-mode 2G/3G/4G RF power amplifiers
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LM3243
SNVS782B
LM3243
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Untitled
Abstract: No abstract text available
Text: Si5513CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9
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Si5513CDC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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marking code DK
Abstract: SI5935CDC
Text: Si5935CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V - 4g 0.156 at VGS = - 1.8 V - 3.8 VDS (V) - 20 Qg (Typ.) 6.2 nC • Halogen-free According to IEC 61249-2-21
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Si5935CDC
2002/95/EC
Si5935CDC-T1-E3
Si5935CDC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking code DK
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Si5513CDC-T1-E3
Abstract: Si5513CDC 82490
Text: Si5513CDC Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9
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Si5513CDC
Si5513CDC-T1-E3
18-Jul-08
82490
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Untitled
Abstract: No abstract text available
Text: Si5513CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9
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Si5513CDC
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SI5935CDC
Abstract: No abstract text available
Text: Si5935CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V - 4g 0.156 at VGS = - 1.8 V - 3.8 VDS (V) - 20 Qg (Typ.) 6.2 nC • Halogen-free According to IEC 61249-2-21
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Si5935CDC
2002/95/EC
Si5935CDC-T1-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5513CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9
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Si5513CDC
2002/95/EC
Si5513CDC-T1-E3
Si5513CDC-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si5513CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9
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Si5513CDC
2002/95/EC
Si5513CDC-T1-E3
Si5513CDC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Si5513CDC
Abstract: Si5513CDC-T1-E3 S10-0547-Rev
Text: Si5513CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9
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Si5513CDC
2002/95/EC
18-Jul-08
Si5513CDC-T1-E3
S10-0547-Rev
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SI5935CDC-T1-E3
Abstract: SI5935CDC
Text: Si5935CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V - 4g 0.156 at VGS = - 1.8 V - 3.8 VDS (V) - 20 Qg (Typ.) 6.2 nC • Halogen-free According to IEC 61249-2-21
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Si5935CDC
2002/95/EC
Si5935CDC-T1-E3
18-Jul-08
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SI5935CDC
Abstract: No abstract text available
Text: Si5935CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V - 4g 0.156 at VGS = - 1.8 V - 3.8 VDS (V) - 20 Qg (Typ.) 6.2 nC • Halogen-free According to IEC 61249-2-21
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Si5935CDC
2002/95/EC
Si5935CDC-T1-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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