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    4G DIODE Search Results

    4G DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    4G DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tle 4417

    Abstract: potentiometer YH 504 8 pin 4435 ic voltage out and in D 4206 AED02260 TLE4206 TLE motor driver JESD 51-2 tle+4417
    Text: TLE 4206-4G H-Bridge Driver Headlight Beam Controller Data Sheet Rev. 1.0, 2010-08-05 Automotive Power TLE 4206-4G Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF 4206-4G tle 4417 potentiometer YH 504 8 pin 4435 ic voltage out and in D 4206 AED02260 TLE4206 TLE motor driver JESD 51-2 tle+4417

    marking code g1

    Abstract: mil 43
    Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V


    Original     		PDF Si5515CDC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking code g1 mil 43

    Untitled

    Abstract: No abstract text available
    Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V


    Original     		PDF Si5515CDC 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V


    Original     		PDF Si5515CDC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si5515CDC

    Abstract: No abstract text available
    Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V


    Original     		PDF Si5515CDC 2002/95/EC 11-Mar-11

    Si5515CDC

    Abstract: No abstract text available
    Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V


    Original     		PDF Si5515CDC 2002/95/EC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V


    Original     		PDF Si5515CDC 2002/95/EC 11-Mar-11

    SEMINAR ON 4G TECHNOLOGY

    Abstract: HDMI TO VGA MONITOR PINOUT LTE MIMO repeater lte RF Transceiver MIMO 2x2 catalog 4000 single family smd cmos VGA TO HDMI PINOUT LM97593 GSM hsdpa repeater circuit GSM 3g repeater circuit dual gsm repeater
    Text: Wireless Infrastructure 2G/3G/4G Base Station Solutions Guide national.com/wireless 2Q 2008 1Q 2008 Solutions for 2G, 2.5G, 3G, LTE and 4G wireless mobile base stations e.g. GSM/EDGE/ GPRS, W-CDMA, CDMA2000, TD-SCDMA, WiMAX as well as other applications


    Original     		PDF CDMA2000, SEMINAR ON 4G TECHNOLOGY HDMI TO VGA MONITOR PINOUT LTE MIMO repeater lte RF Transceiver MIMO 2x2 catalog 4000 single family smd cmos VGA TO HDMI PINOUT LM97593 GSM hsdpa repeater circuit GSM 3g repeater circuit dual gsm repeater

    schematic diagram of transistor amplifier 5v to 6

    Abstract: IN4004 IN4004 datasheet AN-181 DEM-OPA660-1GC DEM-OPA660-4G OPA660 OPA660AU IN4004 diode IN4004 diodes
    Text: DEM-OPA660-4G EVALUATION FIXTURE FEATURES APPLICATIONS ● EASY AND FAST PERFORMANCE TESTING ● COMPONENTS INCOME CONTROL ● SHOWS OPTIMIZED BOARD LAYOUT ● CIRCUIT DESIGNS ● PERFORMANCE CHECKS ● REPLACES SELF-MADE BOARDS DESCRIPTION The unassembled demo board DEM-OPA660-4G contains three different configurations of the OPA660


    Original     		PDF DEM-OPA660-4G DEM-OPA660-4G OPA660 DEM-OPA660-41G) DEM-OPA660-42G) DEM-OPA660-43G) OPA660AU OPA660, schematic diagram of transistor amplifier 5v to 6 IN4004 IN4004 datasheet AN-181 DEM-OPA660-1GC OPA660 IN4004 diode IN4004 diodes

    Untitled

    Abstract: No abstract text available
    Text: LM3243 www.ti.com SNVS782B – OCTOBER 2010 – REVISED FEBRUARY 2013 LM3243 High-Current Step-Down Converter for 2G/3G/4G RF Power Amplifiers Check for Samples: LM3243 FEATURES DESCRIPTION • The LM3243 is a DC-DC converter optimized for powering multi-mode 2G/3G/4G RF power amplifiers


    Original     		PDF LM3243 SNVS782B LM3243 16-bump

    CL05A106MQ5NUN

    Abstract: TFM201610 TFM201610-1R5M CL03A105 GRM185R60J106M CL05A CL03A105MQ3CSN CL03A10 DFE201610C CL05A106
    Text: LM3243 www.ti.com SNVS782B – OCTOBER 2010 – REVISED FEBRUARY 2013 LM3243 High-Current Step-Down Converter for 2G/3G/4G RF Power Amplifiers Check for Samples: LM3243 FEATURES DESCRIPTION • The LM3243 is a DC-DC converter optimized for powering multi-mode 2G/3G/4G RF power amplifiers


    Original     		PDF LM3243 SNVS782B LM3243 16-bump CL05A106MQ5NUN TFM201610 TFM201610-1R5M CL03A105 GRM185R60J106M CL05A CL03A105MQ3CSN CL03A10 DFE201610C CL05A106

    DFE201610

    Abstract: DFE20
    Text: LM3243 www.ti.com SNVS782B – OCTOBER 2010 – REVISED FEBRUARY 2013 LM3243 High-Current Step-Down Converter for 2G/3G/4G RF Power Amplifiers Check for Samples: LM3243 FEATURES DESCRIPTION • The LM3243 is a DC-DC converter optimized for powering multi-mode 2G/3G/4G RF power amplifiers


    Original     		PDF LM3243 SNVS782B LM3243 DFE201610 DFE20

    Untitled

    Abstract: No abstract text available
    Text: LM3243 www.ti.com SNVS782B – OCTOBER 2010 – REVISED FEBRUARY 2013 LM3243 High-Current Step-Down Converter for 2G/3G/4G RF Power Amplifiers Check for Samples: LM3243 FEATURES DESCRIPTION • The LM3243 is a DC-DC converter optimized for powering multi-mode 2G/3G/4G RF power amplifiers


    Original     		PDF LM3243 SNVS782B LM3243

    Untitled

    Abstract: No abstract text available
    Text: LM3243 www.ti.com SNVS782B – OCTOBER 2010 – REVISED FEBRUARY 2013 LM3243 High-Current Step-Down Converter for 2G/3G/4G RF Power Amplifiers Check for Samples: LM3243 FEATURES DESCRIPTION • The LM3243 is a DC-DC converter optimized for powering multi-mode 2G/3G/4G RF power amplifiers


    Original     		PDF LM3243 SNVS782B LM3243

    Untitled

    Abstract: No abstract text available
    Text: Si5513CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9


    Original     		PDF Si5513CDC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    marking code DK

    Abstract: SI5935CDC
    Text: Si5935CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V - 4g 0.156 at VGS = - 1.8 V - 3.8 VDS (V) - 20 Qg (Typ.) 6.2 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5935CDC 2002/95/EC Si5935CDC-T1-E3 Si5935CDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking code DK

    Si5513CDC-T1-E3

    Abstract: Si5513CDC 82490
    Text: Si5513CDC Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9


    Original     		PDF Si5513CDC Si5513CDC-T1-E3 18-Jul-08 82490

    Untitled

    Abstract: No abstract text available
    Text: Si5513CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9


    Original     		PDF Si5513CDC 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI5935CDC

    Abstract: No abstract text available
    Text: Si5935CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V - 4g 0.156 at VGS = - 1.8 V - 3.8 VDS (V) - 20 Qg (Typ.) 6.2 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5935CDC 2002/95/EC Si5935CDC-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5513CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9


    Original     		PDF Si5513CDC 2002/95/EC Si5513CDC-T1-E3 Si5513CDC-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si5513CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9


    Original     		PDF Si5513CDC 2002/95/EC Si5513CDC-T1-E3 Si5513CDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si5513CDC

    Abstract: Si5513CDC-T1-E3 S10-0547-Rev
    Text: Si5513CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9


    Original     		PDF Si5513CDC 2002/95/EC 18-Jul-08 Si5513CDC-T1-E3 S10-0547-Rev

    SI5935CDC-T1-E3

    Abstract: SI5935CDC
    Text: Si5935CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V - 4g 0.156 at VGS = - 1.8 V - 3.8 VDS (V) - 20 Qg (Typ.) 6.2 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5935CDC 2002/95/EC Si5935CDC-T1-E3 18-Jul-08

    SI5935CDC

    Abstract: No abstract text available
    Text: Si5935CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V - 4g 0.156 at VGS = - 1.8 V - 3.8 VDS (V) - 20 Qg (Typ.) 6.2 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5935CDC 2002/95/EC Si5935CDC-T1-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12