1117s
Abstract: transistor wc 2C vqe 24 d TO220AB IGBT PHPI IRGBC36
Text: INTERNATIONAL RECTIFIER 4Ö5S4S2 00l0bQ3 T • 2t.E D Data Sheet No. PD-9.668 • 7 3*?-03 - - International ÜH Rectifier INSULATED GATE BIPOLAR TRANSISTOR BOOV, 34A FEATURES 600V, 34A, TO-220AB IGBT International R ectifier’s IR G series of Insulated G ate
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00l0bG3
O-220AB
1117s
transistor wc 2C
vqe 24 d
TO220AB IGBT
PHPI
IRGBC36
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.815A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRH7450 IRH8450 N-CHANNEL MEGA RAD HARD 500 Volt, 0.45 2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown
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IRH7450
IRH8450
1x105
1x10s
4fl5545S
IRH7450,
IRH8450
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I1092
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD 9.1289B International IOR Rectifier HEXFET PO W E R M O S F E T IR FY240C M N-CHANNEL Product Summary 200Volt, 0.18Q HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power M OSFET transistors. The effi
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1289B
FY240C
200Volt,
6C730
I1092
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Untitled
Abstract: No abstract text available
Text: Bulletin 12068/B International SRectifier SD 603C.C s e r ie s FAST RECOVERY DIODES Hockey Puk Version Features • H igh p o w e r F A S T re c o v e ry d io d e s e rie s ■ 1.0 to 2 .0 ps re c o v e ry tim e ■ H igh v o lta g e ra tin g s up to 2 2 0 0 V
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12068/B
D-713
SD603C.
00274ba
D-714
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C559
Abstract: IRGRDN300M12 IRGDDN300M12
Text: IRGDDN300M12 IRGRDN300M12 — hecnner "SINGLE SW ITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT V CE= 1200V lc = 300A •Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated V ce ON < 2.7V tsc> 10ms
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IRGDDN300M12
IRGRDN300M12
D0S035G
C-560
C559
IRGRDN300M12
IRGDDN300M12
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