DL 4770
Abstract: D0205AB International Rectifier SSC
Text: 4855452 INTERNATIONAL RECTIFIER IQ R "□s 02E 07900 D 7“ -¿>.3-«2/ Data Sheet NO. PU-2.104 in t e r n a t io n a l r e c t if ie r DE I 4fl5545E □□D7ÌG0 1 | R23DF AND R23DFR SERIES 2400-2200 VOLTS RANGE REVERSE RECOVERY TIME 2.75//S 135 AMP AVG STUD MOUNTED
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07C1G0
R23DF
R23DFR
75//s
R230FR
a400v>
RBXFR248.
D0-205AB
DL 4770
D0205AB
International Rectifier SSC
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Untitled
Abstract: No abstract text available
Text: 4fl5545E DD1457b T7E • INR International s ] Rectifier IRC740 INTERNATIONAL RECTIFIER HEXFET® P ow er M O S FE T • • • • • • PD-9.570B Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements
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4fl5545E
DD1457b
IRC740
145J3
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transistor C239
Abstract: transistor C238
Text: International HH Rectifier PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail” losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve
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IRGBF20F
10kHz)
O-220AB
C-241
TQ-220AB
C-242
transistor C239
transistor C238
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BTI ML-1 94V-0
Abstract: 94V-0 BTI ML-1 BTI ML-2 94V-0
Text: I . I Bulletin 127093 rev. A 09/97 International ir k .f i 52. s e r ie s iQRRectifier FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules Features 150 A • F a st tu rn -o ff th y ris to r ■ Fa st re c o v e ry dio d e ■ H ig h su rge c a p a b ility
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E78996
00301hl
BTI ML-1 94V-0
94V-0 BTI ML-1
BTI ML-2 94V-0
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Untitled
Abstract: No abstract text available
Text: International S Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated G ate Bipolar Transistors IGBTs from International Rectifier have higher current d en sities than com parable bipolar transistors, while
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IRGMC30U
IRGMC30UD
IRGMC30UU
O-254
4flS5455
001flb73
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Untitled
Abstract: No abstract text available
Text: INTE RNATIONAL RECTIFIER 4855452 "SS INTERNATIONAL Ì>Ì~jMfl554SE 0005157 55C RECTIFIER 05127 Data Sheet No. PD-2.040B INTERNATIONAL- R EC T IFIER I O R 75HQ, 85HQ SERIES 75 and 85 Amp Schottky Power Rectifiers Major Ratings and Characteristics Rating Characteristic
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jMfl554SE
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Untitled
Abstract: No abstract text available
Text: International H»HRectifier P D -9 .9 3 0 IRGIH50F INSULATED GATE BIPOLAR TRANSISTOR Fast-Speed IGBT • • • • • • Hermetically sealed Isolated Latch-proof Simple gate drive High operating frequency Switching-loss rating includes all “tail” losses
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IRGIH50F
IRGIH50FU
O-259
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Untitled
Abstract: No abstract text available
Text: S^E 405 5 4 5 2 GG13373 SOM » International S R ectifier I INR SERIES IRK.170, .230, .250 SCR I SCR and SCR / DIODE NEW MAGN-A-pak Power Modules INTERNATIONAL R E CT IF IE R Features • High voltage. ■ Electrically isolated base plate ■ 3 000 V RMS isolating voltage
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GG13373
34-Thermal
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1N4822
Abstract: 1N4820 1N5054 IR 20D2 1N4816 10d05 IR 10D4 IR 10D 7 7510D1 1N4817
Text: INTERNATIONAL RECTIFIER 4855452 SS INTERNATIONAL DE~| 4ÖSS4S5 DDD4clDt. 55C RECTIFIER 04906 D Data Sheet No. PD-2.004C IN T E R N A T IO N A L R E C T IF IE R IÖR <11X14816,1IM5052S10IDSSOD SERIES 1.5 and 8 .0 Amp Molded Silicon R ectifier Diodes Description/Features
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DD04clDb
1IM4816,
1N4816
1N5052
1N4816-22
1N5052-54
1N4822
1N4820
1N5054
IR 20D2
10d05
IR 10D4
IR 10D 7
7510D1
1N4817
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scr tic 2060
Abstract: IRKT THYRISTOR THYRISTOR MODULE irkt 40 diode lt 436 TIC 2060 d291 fire angle of scr circuit irkt 350 IRKT D295
Text: m MÖSSMS2 0ülb7b3 TbO • INR International [TORJRectifier INTERNATIONAL RECTIFIER bSE » SERIES IRK.F112 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate
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13-Frequency
001L770
10ohms^
10ohms.
scr tic 2060
IRKT THYRISTOR THYRISTOR MODULE
irkt 40
diode lt 436
TIC 2060
d291
fire angle of scr circuit
irkt 350
IRKT
D295
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Untitled
Abstract: No abstract text available
Text: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION
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Untitled
Abstract: No abstract text available
Text: I NTERNATI ONAL R E C T I F I E R bSE D • 4Ö554S2 0 0 1 7 4 5 4 1T2 B I N R PD-2.296 International Rectifier 245NQ015 SCHOTTKY RECTIFIER 240 Amp Major Ratings and Characteristics Characteristics ' f av Rectangular waveform V RRM Description/Features 245NQ015 Units
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554S2
245NQ015
245NQ015
4fl5545E!
D017457
D-420
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Untitled
Abstract: No abstract text available
Text: International i» r Rectifier MÛSS4S2 GD1S01G 4b2 • INR PD-9.699A IRFD024 INTERNATIONAL RECTIFIER HEXFET Power M O S FE T Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
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GD1S01G
IRFD024
S5M52
001SQ15
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER 2bE D • 4fi554S2 O O I Q I C H 2 ■ Schottky Rectifiers International Schottky Die @¡*1Rectifier Part Number Die A mm in. Size B mm (In.) Anode Metal Tj Max °C SC090H035A SC090H045A 2.29 (0.090) 2.29 (0.090) 2.03 (0.080) 2.03 (0.080)
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4fi554S2
SC090H035A
SC090H045A
12CTQ
SC090S150A
10CTQ
SC090S035A
SC090S045A
15CTQ
SC125H035A
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74c74
Abstract: PD-2021
Text: INTERNATIONAL RECTIFIER 4855452 SS DeTJ 4 Ö S S 4 SS D O O S 111 fl 55C 05 1 1 1 INTERNATIONAL RECTIFIER Data Sheet No. PD-2.021B INTERNATIONAL RECTIFIER I O R S 1H Q , S D 5 1 & 5 S H Q S E R IE S 6 0 Amp Schottky Power Rectifiers Major Ratings and Characteristics
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irfp150
Abstract: mosfet ir 250p
Text: International ioR Rectifier HEXFET Power MOSFET “ l,8SS,S5 0D1SMtb D3T PD-9.441D IIN R IRFP150 INTERNATIONAL R E C T I F I E R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling
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IRFP150
O-247
T0-220
4fl5545E
irfp150
mosfet ir 250p
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FULL WAVE RECTIFIER and waveforms
Abstract: s70hf 85hf120 70HF 70HFI 41HF120 86HFR10 70hf120 40HF 40HF10
Text: SS INTERNATIONAL RECTIFIER 4 8 55 ^ 52 DE | 4ÖS545E 0004c14b □ | 55C INTERNATIONAL R E C T I F I E R 0*t946 Data Sheet No. PD-2.014D INTERNATIONAL RECTIFIER IÖR 40HF, 70HF, 85HF SERIES 4 0 , 7 0 and 85 Amp Power Silicon Rectifier Diodes Major Ratings and Characteristics
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5545E
CK946
FULL WAVE RECTIFIER and waveforms
s70hf
85hf120
70HF
70HFI
41HF120
86HFR10
70hf120
40HF
40HF10
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s34b 4d
Abstract: S34B16B International Rectifier S34B
Text: I N T E R N A T ^ W A L R ^ ^ ^ E ^ 0 ^ » ^ ,4flSS4SE D 0 D 7 7 S 7 |IQ R j in ter n a tio n a l 4855452 o uata Sheet No. PD-3.102 r e c t if ie r IN T E R N A T IO N A L D R E C T IF IE R 02E 07757 D S34B SERIES 2000-1400 VOLTS RANGE 985 AMP RMS, RING AMPLIFYING GATE
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S54S2
Q0D77S7
S34B2GA
S34B1BA
S34B16B
823B148
T0-200AC
s34b 4d
International Rectifier S34B
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Untitled
Abstract: No abstract text available
Text: 4ÛSS4SS G 0 m ti5 0 b47 H I N R PD-9.896 International @sæ]Rectifier IRF520S HEXFET Power MOSFET • • • • • • • INTERNATIONAL RECTIFIER Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature
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IRF520S
0-27Q
SMD-220
SS452
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Untitled
Abstract: No abstract text available
Text: 4 0 5 5 4 5 2 0015GB2 1Ô4 » I N R International SËr]Rectifier IRFD120 HEXFET Power MOSFET • • • • • • • PD-9.385H INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable 175°C Operating Temperature
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0015GB2
IRFD120
5S452
QG15027
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Untitled
Abstract: No abstract text available
Text: International S Rectifier PD - 2.477A 20CJQ030 SCHOTTKY RECTIFIER 2 Amp Major Ratings and Characteristics Characteristics I f a v > 20CJQ030 Units 2.0 A 30 V 400 A 0.42 V Rectangular waveform V rrm Description / Features The 20CJQ030 surface-mount Schottky rectifier has been
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20CJQ030
20CJQ030
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Untitled
Abstract: No abstract text available
Text: '«! PD -9.1598 International IQR Rectifier PRELIMINARY IRG4BC20KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short
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IRG4BC20KD-S
5SM52
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Untitled
Abstract: No abstract text available
Text: ~73 INTERNATIONAL RECTIFIER IO R Ì T | 4ÖSSMSS □ D D 7 1 7 CJ fi Data Sheet No. PD-2.135 in t e r n a t io n a l r e c t if ie r R23D & R23DR SERIES 1000 - 400 VOLTS RANGE 335 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS VOLTAGE
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R23DR
D0-205AB
71fl3
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Untitled
Abstract: No abstract text available
Text: 4655452 OOlSTlb O n International H ji Rectifier m i HR PD-9.846 IR L IZ 1 4 G INTERNATIO N AL R E C T IF IE R HEXFET Power MOSFET bSE » • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive
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O-220
4A5545E
IRLIZ14G
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