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GAPTEC Electronic GmbH & Co. KG 0.5S4E_1205S3U ISOLATED MODULE DC DC CONVERTERS
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DigiKey	0.5S4E_1205S3U	Tube	343		1	1 $3.09 10 $3.09 100 $2.62893 1000 $2.46192 10000 $2.46192	Buy Now
GAPTEC Electronic GmbH & Co. KG 1S4E_1205S1U ISOLATED MODULE DC DC CONVERTERS
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DigiKey	1S4E_1205S1U	Tube	268		1	1 $3.09 10 $3.09 100 $2.62893 1000 $2.46192 10000 $2.46192	Buy Now
SOURIAU-SUNBANK UTGX714E12P CONN RCPT MALE 12POS SOLDER CUP
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DigiKey	UTGX714E12P	Bag	43		1	1 $32.32 10 $26.346 100 $21.4825 1000 $21.16248 10000 $21.16248	Buy Now
Newark	UTGX714E12P	Bulk	25		1	1 $12.03 10 $12.03 100 $12.03 1000 $12.03 10000 $12.03	Buy Now
RS	UTGX714E12P	Bulk	25		1	1 $32.9 10 $27.47 100 $25.33 1000 $25.33 10000 $25.33	Buy Now
TTI	UTGX714E12P	Each	25		1	1 $25.74 10 $21.55 100 $21.12 1000 $21.12 10000 $21.12	Buy Now
PEI Genesis	UTGX714E12P		22		1	1 $28.58 10 $24.77 100 $24.77 1000 $24.77 10000 $24.77	Buy Now
GAPTEC Electronic GmbH & Co. KG QS4E_1203S1U ISOLATED MODULE DC DC CONVERTERS
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DigiKey	QS4E_1203S1U	Tube	43		1	1 $2.69 10 $2.69 100 $2.28917 1000 $2.275 10000 $2.275	Buy Now
Advanced Thermal Solutions Inc ATS-04E-121-C2-R0 HEATSINK 50X50X10MM XCUT T766
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DigiKey	ATS-04E-121-C2-R0	Tray	25		1	1 $3.94 10 $3.835 100 $3.65 1000 $3.65 10000 $3.65	Buy Now

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4E12 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NE425S01 Abstract: NE425S01-T1 NE425S01-T1B Text: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz 24 • HIGH ASSOCIATED GAIN: 12.0 dB TYP at f = 12 GHz Noise Figure, NF dB	Original	NE425S01 NE425S01 NE425S01-T1 NE425S01-T1B 24-Hour NE425S01-T1 NE425S01-T1B	PDF
gunn diode ghz s-parameter Abstract: impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO Text: California Eastern Laboratories APPLICATION NOTE AN1035 Design Considerations for a Ku-Band DRO in Digital Communication Systems ABSTRACT the parts for the DRO and mechanical assembly will be presented. While the design proposed might not yield the optimum design solution for all DBS applications, it does introduce a few important DRO design techniques that can be applied to other high frequency communication systems.	Original	AN1035 p-7065. AN1023, gunn diode ghz s-parameter impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO	PDF
NE34018 equivalent Abstract: FET model AN1022 AN1033 NE34018 Alpha 1000 GaAsFET as 15-f Text: California Eastern Laboratories APPLICATION NOTE AN1033 NonLinear HJ-FET Model Verification in a PCS Amplifier PCS Amplifier Design Part 3 I. Introduction Lower development costs and shorter times to market of telecommunication subsystems require effective and	Original	AN1033 AN1022 NE34018 equivalent FET model AN1022 AN1033 NE34018 Alpha 1000 GaAsFET as 15-f	PDF
BJT BF 331 Abstract: BF 331 50e3 Text: NONLINEAR MODEL NESG2021M05 CCBPKG SCHEMATIC CCB LCPKG LB LBPKG Base Collector CCE Q1 LE CCEPKG LEPKG CBEPKG BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 Emitter ADDITIONAL PARAMETERS Parameters NESG2021M05 CCB 0.001 pF IS 4.429e-15 MJC 0.108	Original	NESG2021M05 429e-15 31e-3 324e-15 09e-3 100e-18 50e-3 9e-15 4e-15 4e-12 BJT BF 331 BF 331 50e3	PDF
Q1104 Abstract: NE72218 Text: NE72218 Rank 58 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.003pF LD Q1 LG_PKG LG 0.55nH 0.5nH LD_PKG DRAIN 0.76nH 0.1nH GATE CDS_PKG CGS_PKG 0.15pF LS 0.25nH 0.15pF CDX 0.02pF LS_PKG 0.05nH CGX 0.15pF SOURCE FET NONLINEAR MODEL PARAMETERS (1) UNITS Parameters Q1	Original	NE72218 003pF 1e-14 4e-12 27e-12 1e-10 85e-12 055e-12 2e-10 24-Hour Q1104 NE72218	PDF
Untitled Abstract: No abstract text available Text: NE429M01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.003pF LD_PKG LD DRAIN LG_PKG 0.67nH 0.5nH Q1 LG GATE 0.62nH 0.5nH CCD_PKG 0.1pF CDX 0.14pF LS 0.16nH CGS_PKG 0.11pF LS_PKG 0.05nH CGX 0.12pF SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1 Parameters	Original	003pF NE429M01 1e-14 4e-12 07e-12 1e-10 04e-12 24-Hour	PDF
1E-16 Abstract: No abstract text available Text: NONLINEAR MODEL NE6510179A SCHEMATIC Q1 RDX 0.2 ohms LGX LG 0.001 nH 0.75 nH LD 0.65 nH LDX 0.01 nH DRAIN RDBX 400 ohms GATE CDS PKG 0.1 pF CBSX 100 pF CGS PKG 0.1 pF RSX 0.05 ohms LSX 0.001 nH SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1	Original	NE6510179A 1e-16 10e-12 5e-12 20e-12 4e-12 24-Hour	PDF
Untitled Abstract: No abstract text available Text: NONLINEAR MODEL SCHEMATIC NE685M03 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 time seconds IS 8.98e-17 MJC 0.19 capacitance farads BF 107.1 XCJC inductance	Original	NE685M03 98e-17 02e-3 50e-12 11e-12 4e-12 13e-12 14e-12 08eries	PDF
Untitled Abstract: No abstract text available Text: NONLINEAR MODEL SCHEMATIC NE856M03 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 IS 9.2e-16 MJC 0.55 capacitance farads BF 110.3 XCJC 0.3 inductance henries	Original	NE856M03 2e-16 89e-9 32e-11 8e-12 1e-12 4e-12 56e-18 856M03 087e-12	PDF
PJ 3236 Abstract: 50E-12 20E-3 40E-12 OPA2604M Text: * OPA2604M OPERATIONAL AMPLIFIER "MACROMODEL" SUBCIRCUIT * "M" IS MULTIPLE POLE/ZERO TOPOLOGY * CREATED 7/8/92 BCB * REV.A * * -* \| NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;	Original	OPA2604M 9E-15 1E-11 20E-3 304E3 PJ 3236 50E-12 20E-3 40E-12	PDF
22S21 Abstract: NE329 NEC Ga FET marking A Text: SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 2.0 ± 0.2 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz • GATE LENGTH: LG ≤ 0.20 µm 2. 1 ± • GATE WIDTH: WG = 160 µm	Original	NE3210S01 NE3210S01 3210S01 24-Hour 22S21 NE329 NEC Ga FET marking A	PDF
1uF SMD 1206 TANTALUM CAPACITOR 16V Abstract: DIODE 1N4001 SMD 4k7 pot VARIABLE RESISTOR 1206 SMD Capacitor types smd transistor 2f DIODE 1N4001 4.7uF smd smd capacitor philips 0805 SMD Capacitor types 47uF smd Text: AN/RF/RFDes_1/1 December 1999 The CMX017 and CMX018 Designer’s Notebook A collection of designer’s notes and other useful information Part 1-Alternative Peripheral Devices for the EV0171 and EV0181 Evaluation Boards The CMX017 and CMX018 represent CML’s latest RF Transmitter and Receiver ICs. These two devices enable the	Original	CMX017 CMX018 EV0171 EV0181 iE-12 2E-12 1uF SMD 1206 TANTALUM CAPACITOR 16V DIODE 1N4001 SMD 4k7 pot VARIABLE RESISTOR 1206 SMD Capacitor types smd transistor 2f DIODE 1N4001 4.7uF smd smd capacitor philips 0805 SMD Capacitor types 47uF smd	PDF
BF 3027 Abstract: transistor T1J NESG2101M05-T1-A NESG2101M05 S21E nec 2562 GA1060 14851 mje 2055 1GP20 Text: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:	Original	NESG2101M05 OT-343 NESG2101M05 BF 3027 transistor T1J NESG2101M05-T1-A S21E nec 2562 GA1060 14851 mje 2055 1GP20	PDF
NE325S01 Abstract: No abstract text available Text: NE325S01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.001pF Ldx DRAIN Lgx GATE Rgx 6 ohms Q1 0.6nH Rdx 6 ohms 0.69nH Lsx 0.07nH CGS_PKG 0.07pF CDS_PKG 0.05PF Rsx 0.06 ohms SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 VTO	Original	NE325S01 001pF 3e-13 3e-12 02e-12 24-Hour NE325S01	PDF

transistor T1J Abstract: NEC 9319 bjt npn Text: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:	Original	NESG2101M05 OT-343 transistor T1J NEC 9319 bjt npn	PDF
BV-1 501 Abstract: BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01 Text: linear.txt SPICE MODELS - LINEAR Technology Corp. LTC1150 * Version 2.0 Copyright Linear Technology Corp. 10/19/05. All rights reserved. * .SUBCKT LTC1150 3 2 7 4 6 ; +IN -IN V+ V- OUT * INPUT IB1 2 7 -10P IB2 3 7 10P RD1 4 80 2122.1 RD2 4 90 2122.1 M1 80 2 12 12 PM1	Original	LTC1150 LTC1150 5e-12 5e-11 2857E-11 65e-11 7124E-04 3e-11 9605e-8 74902E-10 BV-1 501 BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01	PDF
fds8896 Abstract: FDS8896 S Text: FDS8896 N-Channel PowerTrench MOSFET 30V, 15A, 6.0mΩ Features General Description r DS ON = 6.0mΩ, VGS = 10V, ID = 15A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM	Original	FDS8896 FDS8896 FDS8896 S	PDF
Untitled Abstract: No abstract text available Text: FDD120AN15A0 N-Channel PowerTrench MOSFET 150 V, 14 A, 120 mΩ Features Applications • RDS on = 101 mΩ ( Typ.) @ VGS = 10 V, ID = 4 A • Consumer Appliances • QG(tot) = 11.2 nC ( Typ.) @ VGS = 10 V • LED TV • Low Miller Charge • Synchronous Rectification	Original	FDD120AN15A0	PDF
JFET bf 245 Abstract: ISL28110 Text: Precision Low Noise JFET Operational Amplifiers ISL28110, ISL28210 Features The ISL28110, ISL28210, are single and dual JFET amplifiers featuring low noise, high slew rate, low input bias current and offset voltage, making them the ideal choice for high impedance applications where precision and low noise are	Original	ISL28110, ISL28210 ISL28210, ISL28110 ISL28210 5m-1994. MS-012. FN6639 JFET bf 245	PDF
bf 331 Abstract: ic MAX 8997 ic 7804 bf331 Ic 9148 NESG2021M05 NESG2021M05-T1 S21E 285-2 MAG IC Nec 9002 Text: PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz	Original	NESG2021M05 OT-343 NESG2021M05 9e-15 4e-15 bf 331 ic MAX 8997 ic 7804 bf331 Ic 9148 NESG2021M05-T1 S21E 285-2 MAG IC Nec 9002	PDF
Untitled Abstract: No abstract text available Text: Precision Low Noise JFET Operational Amplifiers ISL28110, ISL28210 Features The ISL28110, ISL28210, are single and dual JFET amplifiers featuring low noise, high slew rate, low input bias current and offset voltage, making them the ideal choice for high impedance applications where precision and low noise are	Original	ISL28110, ISL28210 ISL28210, ISL28110 5m-1994. MS-012. FN6639	PDF
op amp 741 model PSpice Abstract: SSM2131S Text: ANALOG DEVICES □ Ultra-Low Distortion, High Speed Audio Operational Amplifier SSM-2131 FEATURES The SSM-2131 's common-mode rejection of 80dB minimum over a± 1 1 range is exceptional for a high-speed amplifier. HighCMR, combined with a minimum 500V/mV gain into a 10kQ load en	OCR Scan	SSM-2131 00V/mV 40kHz, 2E-15 4E-11) 1E-15) op amp 741 model PSpice SSM2131S	PDF
Untitled Abstract: No abstract text available Text: tm ä n S w it c h x- E123MUX Device s E1/E2/E3 MUX/DEMUX TXC-03361 DATA SHEET FEATURES DESCRIPTION ^ • • E1 2048 kbit/s multiplexer/demultiplexer for ITU-T Recommendations: G.742 (8448 kbit/s E2 frame format) G.751 (34368 kbit/s E3 frame format)	OCR Scan	E123MUX TXC-03361 E12/E23 TXC-03361-MB	PDF
a13468 Abstract: No abstract text available Text: □RAWINTO MADE IN THIRD ANGLE PROJECTION T H I S DRAWI NG IS UNPUBLISHED. C COPYRIGHT 79 LOC RELEASED FOR PUBLICATION ,79 BY AMP INCORPORATED. ALL INTERNATIONAL RIGHTS RESERVED. DI ST AF 50 REVISIONS p F ZONE LTR D E SC R IP T IO N REDRAWN AF-6499 c 1 DATE	OCR Scan	AF-6499 a13468	PDF

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4E12 Search Results

4E12 Price and Stock

GAPTEC Electronic GmbH & Co. KG 0.5S4E_1205S3U

GAPTEC Electronic GmbH & Co. KG 1S4E_1205S1U

SOURIAU-SUNBANK UTGX714E12P

GAPTEC Electronic GmbH & Co. KG QS4E_1203S1U

Advanced Thermal Solutions Inc ATS-04E-121-C2-R0

4E12 Datasheets Context Search

NE425S01

gunn diode ghz s-parameter

NE34018 equivalent

BJT BF 331

Q1104

Untitled

1E-16

Untitled

Untitled

PJ 3236

22S21

1uF SMD 1206 TANTALUM CAPACITOR 16V

BF 3027

NE325S01

transistor T1J

BV-1 501

fds8896

Untitled

JFET bf 245

bf 331

Untitled

op amp 741 model PSpice

Untitled

a13468