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    4E12 Search Results

    4E12 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SiT9365AC-4E1-25E153.600000 SiTime Standard Frequency Low Jitter Differential XO Datasheet
    SiT9365AC-4E1-25E25.000000 SiTime Standard Frequency Low Jitter Differential XO Datasheet
    SiT9365AC-4E1-25E74.175824 SiTime Standard Frequency Low Jitter Differential XO Datasheet
    SiT9365AC-4E1-25N148.351648 SiTime Standard Frequency Low Jitter Differential XO Datasheet
    SiT9365AC-4E1-25N200.000000 SiTime Standard Frequency Low Jitter Differential XO Datasheet
    SF Impression Pixel

    4E12 Price and Stock

    GAPTEC Electronic GmbH & Co. KG 2S4E_1215S1U

    ISOLATED MODULE DC DC CONVERTERS
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    DigiKey 2S4E_1215S1U Tube 222 1
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    SOURIAU-SUNBANK UTGX714E12S

    CONN RCPT FMALE 12P SOLDER CUP
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    DigiKey UTGX714E12S Bag 100 1
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    GAPTEC Electronic GmbH & Co. KG 1S4E_1215S1U

    ISOLATED MODULE DC DC CONVERTERS
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    DigiKey 1S4E_1215S1U Tube 71 1
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    GAPTEC Electronic GmbH & Co. KG QS4E_1212S1U

    ISOLATED MODULE DC DC CONVERTERS
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    DigiKey QS4E_1212S1U Tube 38 1
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    Amphenol Aerospace MS27484E12F35S

    PLUG
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    DigiKey MS27484E12F35S Bag 25 1
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    4E12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE425S01

    Abstract: NE425S01-T1 NE425S01-T1B
    Text: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz 24 • HIGH ASSOCIATED GAIN: 12.0 dB TYP at f = 12 GHz Noise Figure, NF dB


    Original     		PDF NE425S01 NE425S01 NE425S01-T1 NE425S01-T1B 24-Hour NE425S01-T1 NE425S01-T1B

    gunn diode ghz s-parameter

    Abstract: impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO
    Text: California Eastern Laboratories APPLICATION NOTE AN1035 Design Considerations for a Ku-Band DRO in Digital Communication Systems ABSTRACT the parts for the DRO and mechanical assembly will be presented. While the design proposed might not yield the optimum design solution for all DBS applications, it does introduce a few important DRO design techniques that can be applied to other high frequency communication systems.


    Original     		PDF AN1035 p-7065. AN1023, gunn diode ghz s-parameter impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO

    NE34018 equivalent

    Abstract: FET model AN1022 AN1033 NE34018 Alpha 1000 GaAsFET as 15-f
    Text: California Eastern Laboratories APPLICATION NOTE AN1033 NonLinear HJ-FET Model Verification in a PCS Amplifier PCS Amplifier Design Part 3 I. Introduction Lower development costs and shorter times to market of telecommunication subsystems require effective and


    Original     		PDF AN1033 AN1022 NE34018 equivalent FET model AN1022 AN1033 NE34018 Alpha 1000 GaAsFET as 15-f

    BJT BF 331

    Abstract: BF 331 50e3
    Text: NONLINEAR MODEL NESG2021M05 CCBPKG SCHEMATIC CCB LCPKG LB LBPKG Base Collector CCE Q1 LE CCEPKG LEPKG CBEPKG BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 Emitter ADDITIONAL PARAMETERS Parameters NESG2021M05 CCB 0.001 pF IS 4.429e-15 MJC 0.108


    Original     		PDF NESG2021M05 429e-15 31e-3 324e-15 09e-3 100e-18 50e-3 9e-15 4e-15 4e-12 BJT BF 331 BF 331 50e3

    Q1104

    Abstract: NE72218
    Text: NE72218 Rank 58 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.003pF LD Q1 LG_PKG LG 0.55nH 0.5nH LD_PKG DRAIN 0.76nH 0.1nH GATE CDS_PKG CGS_PKG 0.15pF LS 0.25nH 0.15pF CDX 0.02pF LS_PKG 0.05nH CGX 0.15pF SOURCE FET NONLINEAR MODEL PARAMETERS (1) UNITS Parameters Q1


    Original     		PDF NE72218 003pF 1e-14 4e-12 27e-12 1e-10 85e-12 055e-12 2e-10 24-Hour Q1104 NE72218

    Untitled

    Abstract: No abstract text available
    Text: NE429M01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.003pF LD_PKG LD DRAIN LG_PKG 0.67nH 0.5nH Q1 LG GATE 0.62nH 0.5nH CCD_PKG 0.1pF CDX 0.14pF LS 0.16nH CGS_PKG 0.11pF LS_PKG 0.05nH CGX 0.12pF SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1 Parameters


    Original     		PDF 003pF NE429M01 1e-14 4e-12 07e-12 1e-10 04e-12 24-Hour

    1E-16

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE6510179A SCHEMATIC Q1 RDX 0.2 ohms LGX LG 0.001 nH 0.75 nH LD 0.65 nH LDX 0.01 nH DRAIN RDBX 400 ohms GATE CDS PKG 0.1 pF CBSX 100 pF CGS PKG 0.1 pF RSX 0.05 ohms LSX 0.001 nH SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1


    Original     		PDF NE6510179A 1e-16 10e-12 5e-12 20e-12 4e-12 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL SCHEMATIC NE685M03 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 time seconds IS 8.98e-17 MJC 0.19 capacitance farads BF 107.1 XCJC inductance


    Original     		PDF NE685M03 98e-17 02e-3 50e-12 11e-12 4e-12 13e-12 14e-12 08eries

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL SCHEMATIC NE856M03 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 IS 9.2e-16 MJC 0.55 capacitance farads BF 110.3 XCJC 0.3 inductance henries


    Original     		PDF NE856M03 2e-16 89e-9 32e-11 8e-12 1e-12 4e-12 56e-18 856M03 087e-12

    PJ 3236

    Abstract: 50E-12 20E-3 40E-12 OPA2604M
    Text: * OPA2604M OPERATIONAL AMPLIFIER "MACROMODEL" SUBCIRCUIT * "M" IS MULTIPLE POLE/ZERO TOPOLOGY * CREATED 7/8/92 BCB * REV.A * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;


    Original     		PDF OPA2604M 9E-15 1E-11 20E-3 304E3 PJ 3236 50E-12 20E-3 40E-12

    22S21

    Abstract: NE329 NEC Ga FET marking A
    Text: SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 2.0 ± 0.2 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz • GATE LENGTH: LG ≤ 0.20 µm 2. 1 ± • GATE WIDTH: WG = 160 µm


    Original     		PDF NE3210S01 NE3210S01 3210S01 24-Hour 22S21 NE329 NEC Ga FET marking A

    1uF SMD 1206 TANTALUM CAPACITOR 16V

    Abstract: DIODE 1N4001 SMD 4k7 pot VARIABLE RESISTOR 1206 SMD Capacitor types smd transistor 2f DIODE 1N4001 4.7uF smd smd capacitor philips 0805 SMD Capacitor types 47uF smd
    Text: AN/RF/RFDes_1/1 December 1999 The CMX017 and CMX018 Designer’s Notebook A collection of designer’s notes and other useful information Part 1-Alternative Peripheral Devices for the EV0171 and EV0181 Evaluation Boards The CMX017 and CMX018 represent CML’s latest RF Transmitter and Receiver ICs. These two devices enable the


    Original     		PDF CMX017 CMX018 EV0171 EV0181 iE-12 2E-12 1uF SMD 1206 TANTALUM CAPACITOR 16V DIODE 1N4001 SMD 4k7 pot VARIABLE RESISTOR 1206 SMD Capacitor types smd transistor 2f DIODE 1N4001 4.7uF smd smd capacitor philips 0805 SMD Capacitor types 47uF smd

    BF 3027

    Abstract: transistor T1J NESG2101M05-T1-A NESG2101M05 S21E nec 2562 GA1060 14851 mje 2055 1GP20
    Text: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:


    Original     		PDF NESG2101M05 OT-343 NESG2101M05 BF 3027 transistor T1J NESG2101M05-T1-A S21E nec 2562 GA1060 14851 mje 2055 1GP20

    NE325S01

    Abstract: No abstract text available
    Text: NE325S01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.001pF Ldx DRAIN Lgx GATE Rgx 6 ohms Q1 0.6nH Rdx 6 ohms 0.69nH Lsx 0.07nH CGS_PKG 0.07pF CDS_PKG 0.05PF Rsx 0.06 ohms SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 VTO


    Original     		PDF NE325S01 001pF 3e-13 3e-12 02e-12 24-Hour NE325S01

    transistor T1J

    Abstract: NEC 9319 bjt npn
    Text: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:


    Original     		PDF NESG2101M05 OT-343 transistor T1J NEC 9319 bjt npn

    BV-1 501

    Abstract: BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01
    Text: linear.txt SPICE MODELS - LINEAR Technology Corp. LTC1150 * Version 2.0 Copyright Linear Technology Corp. 10/19/05. All rights reserved. * .SUBCKT LTC1150 3 2 7 4 6 ; +IN -IN V+ V- OUT * INPUT IB1 2 7 -10P IB2 3 7 10P RD1 4 80 2122.1 RD2 4 90 2122.1 M1 80 2 12 12 PM1


    Original     		PDF LTC1150 LTC1150 5e-12 5e-11 2857E-11 65e-11 7124E-04 3e-11 9605e-8 74902E-10 BV-1 501 BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01

    fds8896

    Abstract: FDS8896 S
    Text: FDS8896 N-Channel PowerTrench MOSFET 30V, 15A, 6.0mΩ Features General Description r DS ON = 6.0mΩ, VGS = 10V, ID = 15A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM


    Original     		PDF FDS8896 FDS8896 FDS8896 S

    Untitled

    Abstract: No abstract text available
    Text: FDD120AN15A0 N-Channel PowerTrench MOSFET 150 V, 14 A, 120 mΩ Features Applications • RDS on = 101 mΩ ( Typ.) @ VGS = 10 V, ID = 4 A • Consumer Appliances • QG(tot) = 11.2 nC ( Typ.) @ VGS = 10 V • LED TV • Low Miller Charge • Synchronous Rectification


    Original     		PDF FDD120AN15A0

    JFET bf 245

    Abstract: ISL28110
    Text: Precision Low Noise JFET Operational Amplifiers ISL28110, ISL28210 Features The ISL28110, ISL28210, are single and dual JFET amplifiers featuring low noise, high slew rate, low input bias current and offset voltage, making them the ideal choice for high impedance applications where precision and low noise are


    Original     		PDF ISL28110, ISL28210 ISL28210, ISL28110 ISL28210 5m-1994. MS-012. FN6639 JFET bf 245

    bf 331

    Abstract: ic MAX 8997 ic 7804 bf331 Ic 9148 NESG2021M05 NESG2021M05-T1 S21E 285-2 MAG IC Nec 9002
    Text: PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz


    Original     		PDF NESG2021M05 OT-343 NESG2021M05 9e-15 4e-15 bf 331 ic MAX 8997 ic 7804 bf331 Ic 9148 NESG2021M05-T1 S21E 285-2 MAG IC Nec 9002

    Untitled

    Abstract: No abstract text available
    Text: Precision Low Noise JFET Operational Amplifiers ISL28110, ISL28210 Features The ISL28110, ISL28210, are single and dual JFET amplifiers featuring low noise, high slew rate, low input bias current and offset voltage, making them the ideal choice for high impedance applications where precision and low noise are


    Original     		PDF ISL28110, ISL28210 ISL28210, ISL28110 5m-1994. MS-012. FN6639

    op amp 741 model PSpice

    Abstract: SSM2131S
    Text: ANALOG DEVICES □ Ultra-Low Distortion, High Speed Audio Operational Amplifier SSM-2131 FEATURES The SSM-2131 's common-mode rejection of 80dB minimum over a± 1 1 range is exceptional for a high-speed amplifier. HighCMR, combined with a minimum 500V/mV gain into a 10kQ load en­


    OCR Scan     		PDF SSM-2131 00V/mV 40kHz, 2E-15 4E-11) 1E-15) op amp 741 model PSpice SSM2131S

    Untitled

    Abstract: No abstract text available
    Text: tm ä n S w it c h x- E123MUX Device s E1/E2/E3 MUX/DEMUX TXC-03361 DATA SHEET FEATURES DESCRIPTION ^ • • E1 2048 kbit/s multiplexer/demultiplexer for ITU-T Recommendations: G.742 (8448 kbit/s E2 frame format) G.751 (34368 kbit/s E3 frame format)


    OCR Scan     		PDF E123MUX TXC-03361 E12/E23 TXC-03361-MB

    a13468

    Abstract: No abstract text available
    Text: □RAWINTO MADE IN THIRD ANGLE PROJECTION T H I S DRAWI NG IS UNPUBLISHED. C COPYRIGHT 79 LOC RELEASED FOR PUBLICATION ,79 BY AMP INCORPORATED. ALL INTERNATIONAL RIGHTS RESERVED. DI ST AF 50 REVISIONS p F ZONE LTR D E SC R IP T IO N REDRAWN AF-6499 c 1 DATE


    OCR Scan     		PDF AF-6499 a13468