PE12CNT15PO
Abstract: circuit Diagram of TV receiver PE12CNT15NO PE12CNT15 PE12CNT15PC EN12978 mechanical proximity sensor PE12CNT15NC pc power supply diagram ir receiver transistor
Text: Photoelectrics Through-beam, Transistor Output Type PE12CNT15. • • • • • • • • • • Product Description The PE12CNT. is a family of general purpose Photoelectric sensors. They are specially designed for Elevators, Escalators, Entrance control to meet the
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PE12CNT15.
PE12CNT.
PE12CNT15PO
circuit Diagram of TV receiver
PE12CNT15NO
PE12CNT15
PE12CNT15PC
EN12978
mechanical proximity sensor
PE12CNT15NC
pc power supply diagram
ir receiver transistor
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PB10CNT15NO
Abstract: circuit Diagram of TV receiver EN12445 EN12453 PB10CNT15 PB10CNT15NC PB10CNT15PC PB10CNT15PO infrared led receiver 3 mm ir receiver
Text: Photoelectrics Through-beam, Transistor Output Type PB10CNT15. • • • • • • • • • • Product Description The PB10CNT. is a through beam sensor set specially designed for Elevators, Escalators, Entrance control to meet the requirements in
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PB10CNT15.
PB10CNT.
PB10CNT15NO
circuit Diagram of TV receiver
EN12445
EN12453
PB10CNT15
PB10CNT15NC
PB10CNT15PC
PB10CNT15PO
infrared led receiver
3 mm ir receiver
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Untitled
Abstract: No abstract text available
Text: Photoelectrics Through-beam, Transistor Output Type PD70CNT12. • • • • • • • • • • • Product Description The PD70 sensor family of Photoelectric sensors is specially designed for Doors and Entrance control to meet the requirements in the
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PD70CNT12.
UL325
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EN12453
Abstract: EN12978 EN12445 circuit Diagram of TV receiver PB18CNT15 PB18CNT15NC PB18CNT15NO PB18CNT15PC PB18CNT15PO Optical proximity sensor through beam
Text: Photoelectrics Through-beam, Transistor Output Type PB18CNT15. • • • • • • • • • Product Description The PB18CNT. is a through beam sensor set specific designed for safety edge sensing in industrial automatic doors. The housing is designed to
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PB18CNT15.
PB18CNT.
EN12453
EN12978
EN12445
circuit Diagram of TV receiver
PB18CNT15
PB18CNT15NC
PB18CNT15NO
PB18CNT15PC
PB18CNT15PO
Optical proximity sensor through beam
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Abstract: No abstract text available
Text: Photoelectrics Retro-reflective Type PD30CNR06.SA • • • • • • • • • • • Miniature sensor range Range: 6 m Sensitivity adjustment by Potentiometer Modulated, infrared light 850 nm Supply voltage: 10 to 30 VDC Output: 100 mA, NPN or PNP preset
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PD30CNR06.
PD30CNR06
APD30-MB1
APD30-MB2
PD30CNR06
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Untitled
Abstract: No abstract text available
Text: Photoelectrics Through-beam Type PD30CNT15.SA • • • • • • • • • • • Miniature sensor range Range: 15 m Sensitivity adjustment by potentiometer Modulated, infrared light 850 nm Supply voltage: 10 to 30 VDC Output: 100 mA, NPN or PNP preset
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PD30CNT15.
PD30CNT15
APD30-MB1
APD30-MB2
PD30CNT15
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Untitled
Abstract: No abstract text available
Text: Photoelectrics Diffuse-reflective, Background Suppression, IR Type PD30CNB20.IS • • • • • • • • • • • • Miniature sensor range Range: 200 mm Sensitivity adjustment by Potentiometer Modulated, infrared light 850 nm Supply voltage: 10 to 30 VDC
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PD30CNB20.
PD30CNB20
APD30-MB1
APD30-MB2
PD30CNB20
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Untitled
Abstract: No abstract text available
Text: Photoelectrics Retro-reflective, Polarized Type PD30CNP06.SA • • • • • • • • • • • Miniature sensor range Range: 6 m Sensitivity adjustment by Potentiometer Modulated, red light 625 nm, polarized Supply voltage: 10 to 30 VDC Output: 100 mA, NPN or PNP preset
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PD30CNP06.
PD30CNP06
APD30-MB1
APD30-MB2
PD30CNP06
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Untitled
Abstract: No abstract text available
Text: Photoelectrics Diffuse-reflective Type PD30CND10.SA • • • • • • • • • • • Miniature sensor range Range: 1 m Sensitivity adjustment by Potentiometer Modulated, red light 625 nm Supply voltage: 10 to 30 VDC Output: 100 mA, NPN or PNP preset
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PD30CND10.
PD30CND10
APD30-MB1
APD30-MB2
PD30CND10
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2MX16X4
Abstract: IS42S32400AL
Text: IS42S81600AL, IS42LS81600AL IS42S16800AL, IS42LS16800AL IS42S32400AL, IS42LS32400AL 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT LOW-POWER SYNCHRONOUS DRAM ISSI PRELIMINARY INFORMATION SEPTEMBER 2003 • Clock frequency: 133, 100, MHz OVERVIEW ISSI's 128Mb Low - Power Synchronous DRAM achieves
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IS42S81600AL,
IS42LS81600AL
IS42S16800AL,
IS42LS16800AL
IS42S32400AL,
IS42LS32400AL
16Meg
128-MBIT
128Mb
2MX16X4
IS42S32400AL
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2MX16X4
Abstract: IS42S32400AL
Text: IS42S81600AL, IS42LS81600AL IS42S16800AL, IS42LS16800AL IS42S32400AL, IS42LS32400AL 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT LOW-POWER SYNCHRONOUS DRAM ISSI PRELIMINARY INFORMATION SEPTEMBER 2003 • Clock frequency: 133, 100, MHz OVERVIEW ISSI's 128Mb Low - Power Synchronous DRAM achieves
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IS42S81600AL,
IS42LS81600AL
IS42S16800AL,
IS42LS16800AL
IS42S32400AL,
IS42LS32400AL
16Meg
128-MBIT
128Mb
2MX16X4
IS42S32400AL
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IS42S32400L-10BI
Abstract: No abstract text available
Text: IS42S16800L IS42S32400L ISSI 8Meg x16 & 4Meg x 32 128-MBIT PowerSaver SYNC DYNAMIC RAM FEATURES • Clock frequency: 143, 100, MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply
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IS42S16800L
IS42S32400L
128-MBIT)
latency0L-10T
100MHz
IS42S16800L-7BI
IS42S16800L-7TI
IS42S16800L-10BI
IS42S16800L-10TI
IS42S32400L-10BI
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Untitled
Abstract: No abstract text available
Text: IS42S16800L IS42S32400L ISSI 8Meg x16 & 4Meg x 32 128-MBIT PowerSaver SYNC DYNAMIC RAM FEATURES • Clock frequency: 143, 100, MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply
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IS42S16800L
IS42S32400L
128-MBIT)
100MHz
IS42S16800L-7B
IS42S16800L-7T
IS42S16800L-10BI
IS42S16800L-10T
IS42S32400L-7B
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L7251-3.1
Abstract: L6284-3.1 AL133-00015.1 MPC4C2.1 th2167.1 DSTH506010.1 PEF3304EV2.1 AU1329.1 A612826.1 PMB6256-V1.1
Text: 1 Datasheet D 2DF D D D 7!F D"#$FD 8F7 8 %995&'7"D 1 1 %DC78C4E91 E59133AA14A38C4E119AA713A74EC8C4E1 1 CE1731EC8C4E1998AF91 24382DA15AC7A91967191F42CDA14EA9#1 9F384EA9#1A59A8#1431FA1F7CEA91
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8C4E91
E59133AA14
13A74
8C4E19
98AF91
2DA15A
C7A91967
91F42CDA1
CEA91
8C4E918
L7251-3.1
L6284-3.1
AL133-00015.1
MPC4C2.1
th2167.1
DSTH506010.1
PEF3304EV2.1
AU1329.1
A612826.1
PMB6256-V1.1
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klud
Abstract: marconi company marconi N108
Text: N108 M INIATURE O U TPU T PENTODE APRIL, 1952 MA INDIRECTLY HEATED BASE C O N N E C T IO N S A N D V A LV E D IM E N SIO N S Base : B7G B ulb: Tubular Overall length : 64—70 Seated length : 58—64 Max. diameter : 19 mm. mm. mm. View from underside of base.
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74L837
Abstract: No abstract text available
Text: g MOTOROLA SN54/74LS375 D E S C R IP T IO N — The S N 54 L S /7 4 L S 37 5 is a 4-BK D-Type Latch for use as tem porary storage fo r binary inform ation between processing lim its and in p u t/o u tp u t o r indicator units. W hen th e Enable (E) is HIGH,
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SN54/74LS375
74L837
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Untitled
Abstract: No abstract text available
Text: bBE D TTRTGTb D D liaO I 220 • T SA J SANYO SEMICONDUCTOR CORP LC7463M CMOS LSI *3589 Infrared Remote Control Transmitter Applications OVERVIEW PINOUT The LC7463M is a 32-key infrared remote control trans mitter IC that incorporates all key-scanning, oscillator
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LC7463M
LC7463M
32-key
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CMOS 4033
Abstract: pin diagram ic 4033 ic 4033 internal diagram 4013 IC circuit diagram LOGIC DIAGRAM OF IC 4033 IC CMOS 4023 4013 BK
Text: M ilitary CMOS Zero Pow er FIFOs PRELIM INARY 57C 401 /13 5 7C 402/23 57C 403 3 6 4 x 4 6 4 x 5 M em ory 12 M Hz C ascadable Conforms to MIL-STD-883, Class B (Latest Revision) Description Features/B enefits Zero standby power High-speed 12 MHz shift-ln/shlft-out data rates
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MIL-STD-883,
S7C4013/23/33)
57C40X/XX
CMOS 4033
pin diagram ic 4033
ic 4033 internal diagram
4013 IC circuit diagram
LOGIC DIAGRAM OF IC 4033
IC CMOS 4023
4013 BK
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Untitled
Abstract: No abstract text available
Text: W91630 SERIES Winbond Electronics Corp. ÎO-MEMORY TONE/PULSE DIALER WITH REDIAL FUNCTION GENERAL DESCRIPTION The W91630 series are Si-gate CMOS ICs that provide the signals needed for either pulse or tone dialing. The W91630 series features a ten-channel, 32-digit automatic dialing memory.
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W91630
32-digit
0523SM
S23S4
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r2r resistor ladder
Abstract: CD 4093 PIN DIAGRAM flat package details for CD 4093 IC 4093 MB88351 5l09 CD 4093 DATASHEET FPT-16P-M06 MB88351-PF MB88351-PFV
Text: October 1991 Edition 1.0 DATA S H E ET FUJITSU MB88351 R-2R TYPE 12-BIT D/A CONVERTER WITH OPERATIONAL AMPLIFIER OUTPUT BUFFERS DESCRIPTION The Fujitsu MB88351 is an R-2R type 12-bit resolution digital-to-analog converter DAC , designed (or interfaoe with a wide range of general 4-bit and 6-bit microcontrol¡ers including Fujitsu's MB8B200 family, M8B850 family, and MB88500 family 4-bk
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12-BIT
MB88351
MB8B200
MB8850
MBS8500
MB8S351
The18)
r2r resistor ladder
CD 4093 PIN DIAGRAM
flat package details for CD 4093
IC 4093
5l09
CD 4093 DATASHEET
FPT-16P-M06
MB88351-PF
MB88351-PFV
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Untitled
Abstract: No abstract text available
Text: f35 H A R R IS U U S E M I C O N D U C T O R CD4508BMS C M O S D ual 4-Bit Latch December 1992 Features Pinout CD4508BMS TOP VIEW • High-Voltage Types 20-Volt Rating • Two Independent 4-Bit Latches • Individual Master Reset tor Each 4-BK Latch • 3-State Outputs with Hlgh-lmpedance State for Bus
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CD4508BMS
CD4508BMS
20-Volt
100nA
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ELECTROMATIC se 110 RELAY
Abstract: ELECTROMATIC se 110 ELECTROMATIC SR electromatic s system electromatic s system st 115 electromatic s system St 115 220 EL1808 EL Ei 33 transformer electromatic sensors RNAP230
Text: INDUCTIVE SENSORS ikciriairalj£ Proximity-SwitchesAm plifiers : mm ♦ .1 li I • ■ - r r i - m r — «Ec > ■v;. m ESREPUBL nJD r- Namur sensor system SD 170/SD 270 • • • • oO o rlh m n n tin S - SYSTEM SD 110 2 2 0 SUPPLY 220 VAC INDUCTIVE SENSOR
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170/SD
110/SD
210/H
ELECTROMATIC se 110 RELAY
ELECTROMATIC se 110
ELECTROMATIC SR
electromatic s system
electromatic s system st 115
electromatic s system St 115 220
EL1808
EL Ei 33 transformer
electromatic sensors
RNAP230
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LEA-5T
Abstract: No abstract text available
Text: MT4LC4M4B1 S 4 MEG X 4 DRAM M IC R O N 4 MEG x 4 DRAM DRAM 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) • JEDEC- and industry-standard x4 pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process
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180mW
048-cycle
24/26-Pin
D15pm5
LEA-5T
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Untitled
Abstract: No abstract text available
Text: H A -2 5 2 0 /8 8 3 H A -2 5 2 2 /8 8 3 Ha r r is Uncom pensated, High Slew Rate O perational Amplifiers January 1989 Features D escrip tio n • This Circuit Is Processed In Accordance to M ll-S td 8S3 and Is Fully Conform ant Under the Provisions of Paragraph 1.2.1.
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10MHz
200ns
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