KM44C1000D
Abstract: KM44V1000D
Text: KM44C1000D, KM44V1000D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power), and
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Original
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KM44C1000D,
KM44V1000D
highM44V1000D
300mil
KM44C1000D
KM44V1000D
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PDF
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KM44C1000D
Abstract: KM44V1000D
Text: KM44C1000D, KM44V1000D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power), and
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Original
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KM44C1000D,
KM44V1000D
highM44V1000D
300mil
KM44C1000D
KM44V1000D
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PDF
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A9VC
Abstract: No abstract text available
Text: KM44C1004D, KM44V1004D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power),
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Original
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KM44C1004D,
KM44V1004D
M44V1004D
300mil
A9VC
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PDF
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EM6604
Abstract: RL01 RL23 EM Microelectronic Buzzer quartz
Text: EM6604 4 bit Microcontroller Figure 1 Architecture Features • Low Power - typical 2.7µA active mode - typical 0.3µA standby mode @ 1.5V, 32kHz, 25°C • Low Voltage - 1.2 to 1.7V • buzzer - 2kHz • ROM - 1536 x 16bit Mask Programmed • RAM - 72 × 4bit (User Read/Write)
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EM6604
32kHz,
16bit
EM66XX
RL01
RL23
EM Microelectronic
Buzzer quartz
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PDF
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EM6504
Abstract: EM6604 em microelectronic 34CPU EM MICROELECTRONIC - MARIN SA EM Microelectronic timer
Text: EM6604 4 bit Microcontroller Features Figure 1 Architecture • Low Power - typical 1.7µA active mode - typical 0.3µA standby mode @ 1.5V, 32kHz, 25°C • Low Voltage - 1.2 to 1.7V • buzzer - 2kHz • ROM - 1536 x 16bit Mask Programmed • RAM - 72 × 4bit (User Read/Write)
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Original
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EM6604
32kHz,
16bit
EM66XX
EM6504
DIL24,
EM6504
em microelectronic
34CPU
EM MICROELECTRONIC - MARIN SA
EM Microelectronic timer
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PDF
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Untitled
Abstract: No abstract text available
Text: KM44C1004D, KM44V1004D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 41bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power),
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Original
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KM44C1004D,
KM44V1004D
41bit
andM44V1004D
300mil
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PDF
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KM44C1000P
Abstract: No abstract text available
Text: KM44C1000D, KM44V1000D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power), and
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OCR Scan
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KM44C1000D,
KM44V1000D
KM44C1000P
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PDF
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUIT TOSHIBA 1. TECHNICAL VOICE SYNTHESIS LSI TC8805F DATA GENERAL TC8805F is PARCOR type voice synthesys 1-chip CMOS LSI with 4bit microprocessor. With a simple interface circuit key matrix, keyboard, LED and an audio circuit connected, the LSI
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OCR Scan
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TC8805F
TC8805F
64Kbit
TMP47C432.
TC8802AF.
4096X8bit
256X4bit
TC8805Fâ
JUN-1990_
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PDF
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TMP47C432
Abstract: TC8802AF TC8802 FP80 TC8805F qfp80-p-1420 parcor R80-R83
Text: INTEGRATED CIRCUIT TO SHIBA 1. ° 1 (2) (3) (4) (5) (6) (7) TECHNICAL DATA VOICE SYNTHESIS LSI TC8805F GENERAL TC8805F is PARCOR type voice synthesys 1-chip CMOS LSI with 4bit microprocessor. With a simple interface circuit ( key matrix, keyboard, LED ) and an audio circuit connected, the LSI
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OCR Scan
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TC8805F
TC8805F
64Kbit
TMP47C432.
TC8802AF.
4096X8bit
256X4bit
R63fR70
R83tR90)
K00-K03
TMP47C432
TC8802AF
TC8802
FP80
qfp80-p-1420
parcor
R80-R83
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PDF
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KM44C4102
Abstract: No abstract text available
Text: CMOS DRAM KM44C4102 4M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: T ie Samsung KM44C4102 is a high speed CMOS 4 ,194,304x4 Dynamic Random Access Memory. Its Design is optimized for high performance applications
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OCR Scan
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KM44C4102
KM44C4102
304x4
24-LEAD
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PDF
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KM44C258
Abstract: KM44C1002BV
Text: KM44C1002B CMOS DRAM 1 M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1002B is a CMOS high speed 1,048,576x4 Dynamic Random Access Memory. Its de sign is optimized for high performance applications
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OCR Scan
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KM44C1002B
110ns
130ns
150ns
KM44C1002B
576x4
TheKM44C1002B
20-LEAD
KM44C258
KM44C1002BV
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PDF
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TC8802
Abstract: parcor TC8802AF
Text: Il 0024am ?tr «Tosa TC8805F-1 b4E m 1. TOS HI BA UC/UP G EN ER A L TC8805F is PARCOR type voice synthesys 1-chip CMOS LSI with 4bit microprocessor. W ith a simple interface circuit ( key m atrix, keyboard, LED ) and an audio circuit connected, the LSI is
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OCR Scan
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TC8805F-1
0024am
TC8805F
64kbit
TMP47C432.
TC8802AF.
72Mti
TC8805F-10
QFP80-P-1420)
TC8802
parcor
TC8802AF
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • T'ibmMS ÜÜ1S7E5 ST4 ■ KM44C1002B CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1002B is a CMOS high speed 1,048,576x4 Dynamic Random Access Memory, Its de
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OCR Scan
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KM44C1002B
KM44C1002B
576x4
KM44C1002B-6
110ns
KM44C1002B-,
130ns
KM44C1002B-8
150ns
20-LEAD
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PDF
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ICT 20 PIN PLASTIC 300 MIL DIP
Abstract: No abstract text available
Text: KM44C1010B CMOS DRAM 1M X 4Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: I rac • • • • • • • • • • • tcAC tRC 110ns KM44C1010B-6 60ns 15ns KM44C1010B-7 70ns 20ns 130ns
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KM44C1010B
KM44C1010B-6
KM44C1010B-7
KM44C1010B-8
110ns
130ns
150ns
KM44C1010B
576x4
ICT 20 PIN PLASTIC 300 MIL DIP
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • 7 T b 4 m 2 GDlSTOb 332 ■ KM44C1010B CMOS DRAM 1M X 4Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1010B is a high speed CMOS 1,048,576x4 Dynamic Random Access Memory. Its
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KM44C1010B
KM44C1010B
576x4
110ns
KM44C101
130ns
KM44C1010B-8
150ns
KM44C1010B-6
20-LEAD
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PDF
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Z8536AB1
Abstract: z853606 Z8536 Z8536B1V Z8536AB1V 24129 DIL40-PLA PDIP40 PLCC44 DIL40P
Text: wf v# S G S -T H O M S O N Z8536 CIO COUNTER/TIMER AND PARALLEL I/O UNIT • TW O INDEPENDENT 8-BIT, DOUBLE-BUFFE RED, BIDIRECTIONAL I/O PORTS PLUS A 4BIT SPECIAL-PURPOSE I/O PORTS. I/O PORTS FEATURE PROGRAMMABLE POLA RITY, PROGRAMM ABLE DIRECTION Bit
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Z8536
IEEE-488)
16-VECTOR
16-BIT
Z8536B1V
DIL40-PLA
Z8536AB1V
Z8536B6V
Z8536AB1
z853606
Z8536
24129
DIL40-PLA
PDIP40
PLCC44
DIL40P
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PDF
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N37-38
Abstract: No abstract text available
Text: SG STHO M SO N Z8536 CIO COUNTER/TIMER AND PARALLEL I/O UNIT • TW O INDEPENDENT 8-BIT, DOUBLE-BUFFE RED, BIDIRECTIONAL I/O PORTS PLUS A 4BIT SPECIAL-PURPOSE I/O PORTS. I/O PORTS FEATURE PROGRAMMABLE POLA RITY, PROGRAMM ABLE DIRECTION Bit mode , "PULSE CATCHERS", AND PRO
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OCR Scan
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Z8536
IEEE-488)
16-VECTOR
16-BIT
Z8536AB
Z853EA
Z8536C1V
Z8536A
Z8536C
Z8536D1N
N37-38
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PDF
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Untitled
Abstract: No abstract text available
Text: KM44C1012B CMOS DRAM 1M x 4Bit CM O S Dynamic R A M with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1012B is a high speed CMOS 1 ,0 4 8 ,5 7 6 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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OCR Scan
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KM44C1012B
KM44C1012B-6
KM44C1012B-7
KM44C1012B-8
130ns
150ns
KM44C1012B
20-LEAD
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PDF
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Untitled
Abstract: No abstract text available
Text: S A MS UN G E L E C T R O N I C S INC b?E ]> Bi 7 c3 b m M 5 KM44C4102 001b2tia Tb2 CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C4102 is a high speed CMOS 4 ,194,304x4 Dynamic Random Access Memory. Its
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OCR Scan
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KM44C4102
001b2tia
KM44C4102
304x4
KM44C4102-7
130ns
KM44C4102-8
150ns
KM44C4102-6
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PDF
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Untitled
Abstract: No abstract text available
Text: KM44C1004D, KM44V1004D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 41 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power),
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OCR Scan
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KM44C1004D,
KM44V1004D
100us,
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 Q01S74S QÛ2 I KM44C1012B CMOS DRAM 1 M x 4Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1012B is a high speed CMOS 1 ,0 4 8 ,5 7 6 x 4 Dynamic Random Access Memory. Its
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OCR Scan
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Q01S74S
KM44C1012B
KM44C1012B
110ns
KM44C1012B-7
130ns
KM44C1012B-8
KM44C1012B-6
150ns
20-LEAD
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PDF
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Untitled
Abstract: No abstract text available
Text: KM44C1000D, KM44V1000D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 41 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power), a d
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OCR Scan
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KM44C1000D,
KM44V1000D
1024cycles
0G37Gflc
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PDF
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upc 566
Abstract: No abstract text available
Text: fZ 7 ^ 7 # S G S -T H O M S O N f IL1 O T M Û S Z8536 C IO C O U N TE R /TIM E R AND PARALLEL I/O UNIT • TW O INDEPENDENT 8-BIT, DOUBLE-BUFFE RED, BIDIRECTIO NAL I/O PORTS PLUS A 4BIT SPECIAL-PURPOSE I/O PORTS. I/O PORTS FEATURE PROGRAMMABLE POLA RITY, PROGRAMM ABLE DIRECTION Bit
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OCR Scan
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Z8536
IEEE-488)
16-VECTOR
16-BIT
28536B
Z8536A
Z8536C1V
Z8536C6V
Z8536AC
Z8536D1N
upc 566
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PDF
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QAC22
Abstract: ez 948 ic
Text: SAM S UN G E L E C T R O N I C S INC b?E D 7 T b 4 1 H E D O l b SS l VbT • SMûK ■ KM44C4002 CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • The Samsung KM44C4002 is a high speed CMOS 4 ,1 9 4 ,3 0 4 x 4 D ynam ic Random A ccess Memory. Its
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OCR Scan
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KM44C4002
KM44C4002
KM44C4002-7
KM44C4002-8
KM44C4002-6
24-LEAD
QAC22
ez 948 ic
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PDF
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