Q002
Abstract: BB621 BB622
Text: ITT S E N I C O N D / INTERMETALL 50E D 4bfl2711 Q G 0 2 b 4 2 17 3 « I S I T i m 0 BB621, BB622 Tuner Diodes Silicon Epitaxial Planar Capacitance Diodes im MiniMelf case MELF = Metal ELectrodes Face-bonding) especially suited for automatic insertion with very wide effective capacitance
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4bfl2711
Q002b42
BB621,
BB622
4bfi2711
0002b44
Q002
BB621
BB622
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LL4149
Abstract: LL4150 LL4152 LL4153 LL4447 LL4449 LL4450 LL4451 LL4453 LL4454
Text: ITT S E M I C O N D / INTERMETALL b lE » • 4bfl2711 0003172 2^3 m i S l Silicon Diodes Silicon Diodes for general purpose and switching Cathode Mark h - 3.5*01-» / - These diodes are identical electrically to the corresponding JEDEC 1N . . . types.
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4b62711
01--K
LL4149
LL4150
LL4152
LL4153
LL4447
LL4449
LL4450
LL4451
LL4453
LL4454
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itt ol 170
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET HAL300 Differential Hall Effect Sensor 1C A Edition June 14, 1995 62 5 1 -3 4 5 -3 P D 4bfl2711 QD0S231 43b ITT Semiconductors ITT HAL 300 PRELIMINARY DATA SHEET Differential Hall Effect Sensor 1C HAL 300 in CMOS technology Vsup Vsup
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HAL300
4bfl2711
QD0S231
itt ol 170
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1N5225S
Abstract: 1N5226S 1N5227S 1N5228S 1N5229S 1N5230S 1N5231S 1N5232S 1N5233S
Text: ZENER DIODES ITT SEMICOND/ INTERMETALL SDE D • 4bfl2711 ÜÜDES13 HTl miSI 1N5225S Series 300 mW Zener Diodes DO-34 Glass Package TA = 25 °C Type 1N5225S 1N5226S 1N5227S 1N5228S 1N5229S 1N5230S 1N5231S 1N5232S 1N5233S 1N5234S 1N5235S 1N5236S 1N5237S 1N5238S
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MbflE711
1N5225S
DO-34
1N5226S
1N5227S
1N5228S
1N5229S
1N5230S
1N5231S
1N5232S
1N5233S
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diode ITT
Abstract: 1n4448 itt 1N4448 LL4448 QQQ317D
Text: ITT SEMICOND/ INTERMETALL blE D • 4bfl2711 0ÜG31t.ô fibE * I S I LL4448 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard JEDEC 1N4448 K 3.510.1- Cathode Mark
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4bfl2711
LL4448
1N4448
4ba2711
diode ITT
1n4448 itt
1N4448
LL4448
QQQ317D
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ITT ZENER
Abstract: 1N4729 1N4764 ZM4729 ZM4730 ZM4731 ZM4732 ZM4764 170DK Zener intermetall
Text: I T T SEflICONP/ INTERNETALL blE D • 4bfl2711 0003 20 b 4Tb « I S I ZM4729 . . . ZM4764 Silicon Planar Power Zener Diodes for use in stabilizing and clipping circuits with high power rating. Standard Zener voltage tolerance is ± 1 0 % . Add suffix “A ” for ± 5 % tolerance. Other tolerances available
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000320b
ZM4729
ZM4764
DO-41
1N4729
1N4764.
4bflS711
ITT ZENER
1N4729
1N4764
ZM4729
ZM4730
ZM4731
ZM4732
ZM4764
170DK
Zener intermetall
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1N5241S
Abstract: No abstract text available
Text: ZENER DIODES ITT SEMICOND/ INTERMETALL SDE D • 4bfl2711 ÜÜDES13 HTl m i S I 1N5225S Series 300 mW Zener Diodes DO-34 Glass Package TA = 25 °C Type 1N5225S 1N5226S 1N5227S 1N5228S 1N5229S 1N5230S 1N5231S 1N5232S 1N5233S 1N5234S 1N5235S 1N5236S 1N5237S
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4bfl2711
DES13
N5225S
DO-34
1N5225S
1N5226S
1N5227S
1N5228S
1N5229S
1N5230S
1N5241S
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BCX71RG
Abstract: BCW61RA BCW61RD BCW61 BCX71 BCW61R transistor marking bh ra BCW60 BCW61A BCW61B
Text: ITT SEMICON] / INTERMETALL SOE » 4bfl2711 D002L00 714 BCW 61, BCX71 PNP Silicon Epitaxial Planar Transistor for switching and AF am plifier applications. H Especially suited for automatic insertion in thick- and thin-film circuits. The transistors BCW61 are subdivided into the groups A, B,
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BCW61,
BCX71
D002L00
BCW61
BCX71
BCW60
BCX70
BCW61R
BCX71RG
BCW61RA
BCW61RD
transistor marking bh ra
BCW61A
BCW61B
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DD05215
Abstract: ADD1210
Text: A t* t '$ / PRELIM INARY DATA SHEET HAL115 Hall Effect Sensor IC à 4bfl2711 Ü005213 410 Edition June 30, 1995 6 2 5 1 -41 4-2 P D ITT Semiconductors ctors ITT HAL115 PRELIMINARY DATASHEET Hall Effect Sensor 1C in CMOS technology Marking Code Type Marking
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HAL115
6251-414-2PD
4tfl2711
DD05215
ADD1210
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET HAL115 Hall Effect Sensor IC à 4bfl2711 D00S213 410 • Edition June 30, 1995 6251-414-2PD "I I I II I | ITT Semiconductors - I I I HAL115 Hall Effect Sensor 1C in CMOS technology I PRELIMINARY DATASHEET Marking Code Release Notes: Revision bars indicate significant
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HAL115
4bfl2711
D00S213
6251-414-2PD
HAL115
115UA
OT-89A:
IEC68-2-58
O-92UA:
IEC68-2-20
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ITT ccu 3000 i
Abstract: ITT CCU CCU3000
Text: j& p n K | g » tt CCU 3000, CCU 3000-1, CCU 3001, CCU 3001-1, Central Control Unit h Edition Feb. 14, 1995 6251-367-1DS ITT Semiconductors • HbfiS?].! GGG4ò44 b'ìB ■ ITT CCU 3000, CCU 3000-1 CCU 3001, CCU 3001-1 Contents Page Section Title 4 1. 1.1.
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6251-367-1DS
ITT ccu 3000 i
ITT CCU
CCU3000
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ITT DIODE 125
Abstract: No abstract text available
Text: S ÏÏT Æ 1997 IT T • IN 4bô2711 0üübS7E TMb ■ T E R M E T A L L HAL115 Marking Code Hall Effect Sensor 1C in CMOS technology Temperati.ire Range Type Features: E C - operates from 4.3 to 24 V supply voltage with reverse voltage protection HAL 115UA
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HAL115
115UA
HAL115S
OT-89A:
O-92UA:
GG0b27fi
ITT DIODE 125
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ITT ccu 3000 i
Abstract: No abstract text available
Text: Edition March 13,1996 6251-412-2DS ITT INTERMETALL HbfiE?!! OODS'ìSb IflH CCZ 3005 H Page Section Title 4 4 1. 1.1. Introduction Features 5 5 5 5 5 9 10 10 15 16 16 17 20 24 24 24 24 25 25 25 25 26 26 27 27 28 30 31 31 32 34 34 34 35 35 2. 2.1. 2.2. 2.3.
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6251-412-2DS
4bfl2711
4bfi2711
ITT ccu 3000 i
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IMBT3904
Abstract: ITT INTERMETALL
Text: ITT SEIIICON] / INTERHETALL SGE J> • 4bfi2711 0002564 741 M I S I IMBT3903, IMBT3904 'T '’?A' ' 5 NPN Silicon Epitaxial Planar Transistors « for switching and amplifier applications. TE A s complementary types the PN P transistors IMBT3905 and IMBT3906 are recommended.
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4bfi2711
IMBT3903,
IMBT3904
IMBT3905
IMBT3906
IMBT3903
IMBT3904
O-236)
15000Hz
ITT INTERMETALL
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041 itt diode
Abstract: 129 ITT itt SD101 ITT DIODE 041 LL101A ITT DIODE 129 ITT diode LL101 LL101B LL101C
Text: ITT SEMICOND/ INTERMETALL blE D • Hbfl2711 OGOBIT? bb3 « I S I LL101A. . . LL101C Silicon Schottky Barrier Diodes for general purpose applications Cathode Mark 3.5 401 / u - The LL101 Series is a metal on silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward
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HbflS711
LL101A.
LL101C
LL101
DO-35
SD101
LL101A
LL101B
LL101C
4bfl2711
041 itt diode
129 ITT
itt SD101
ITT DIODE 041
ITT DIODE 129
ITT diode
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ITT DIODE
Abstract: diode ITT itt diodes ITT DIODE 125 intermetall BB723 DDG3163
Text: ITT SEMICOND/ INTERMETALL blE D • Mbfi2711 DDG3163 07=5 WËISI BB723 Tuner Diode Silicon Epitaxial Planar Capacitance Diode with very wide effective capacitance variation for tuning the VHF range 170 to 303 MHz and the hyperband range 303 to 463 MHz without switching.
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4bfi2711
DDG3163
BB723
4bfl2711
ITT DIODE
diode ITT
itt diodes
ITT DIODE 125
intermetall
BB723
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ZY1S
Abstract: 58A2 ZY 20 DIODE ZY13 diode zy 245 zener ZY10 zener diode 278 ZY12 ZY16
Text: ZY1. . ZY200, ZY1S. . ZY200S Silicon Power Zener Diodes for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E 24 standard. Samller voltage tolerance on request. The diodes in plastic case DO-41 are designated by suf
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ZY200,
ZY200S
DO-41
4ba2711
ZY1S
58A2
ZY 20 DIODE
ZY13
diode zy
245 zener
ZY10
zener diode 278
ZY12
ZY16
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Transistor BC 227
Abstract: No abstract text available
Text: ML.Ö5711 DDObñBD T 3 3 VPX 3225D, VPX 3224D PRELIMINARY DATA SHEET Contents Page Section Title 5 5 1. 1.1. Introduction System Architecture 9 9 9 10 10 10 11 11 12 12 13 14 15 16 16 16 17 17 17 18 20 20 20 21 21 22 24 24 24 24 24 26 27 28 28 29 29 2. 2.1.
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3225D,
3224D
XT1750
HC49U
4bfl2711
4b02711
Transistor BC 227
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itt ol 170
Abstract: No abstract text available
Text: HAL114 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Features: A - operates from 4.5 V to 24 V supply voltage HAL114S HAL114UA - overvoltage and reverse-voltage protection 114A 114E 114C - short-circuit protected open-drain output switch
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HAL114
HAL114S
HAL114UA
4bfiZ711
itt ol 170
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ITT 10.7 MHz crystal filter
Abstract: No abstract text available
Text: 4b ñH 71 1 Q G G 5 ô ê 4 Ibb CAP 3001 A Contents Page Section Title 4 1. Introduction 4 1.1. Features 4 2. Functional Description 4 4 2.1. 2.1.1. 2.1.2. Architecture DSP Block 2.1.3. 2.1.4. Analog Part Operating Modes 2.1.5. 2.1.6. 2.1.7. Analog Input Systems
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4bfl2711
ITT 10.7 MHz crystal filter
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION DAC 3550A Stereo Audio DAC 4 - M IC R O N AS Edition Aug. 14, 1998 6251-467-1 Al INTERMETALL 4bßH711 GDD7bbb lb3 DAC 3550A ADVANCE INFORMATION Contents Page Section Title 3 3 1. 1.1. Introduction Main Features 5 5 6 6 6 6 6 6 7 7 8 9 9
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DD07h13
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MSP 341 OD Multistandard Sound Processor < :> M IC R O N A S Edition Jan. 15, 1998 6251-422-3PD INTERMETALL 4bfi2711 0 0 0 ^ 3 4 MO T MSP 341OD PRELIMINARY DATASHEET Contents Page Section Title 5 1. 1.1. Introduction MSP 3410D Additional Features and Major Improvements compared with MSP 3410B
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6251-422-3PD
4bfi2711
341OD
3410D
3410B
3410D
4bfl2711
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311OA
Abstract: No abstract text available
Text: S S i S S ’“ IT T IN T E R M E T A L L MbflE?!! O G G b l M O 455 DMI 3110A Contents Page Section Title 4 1. Introduction 4 4 5 5 5 5 5 5 5 5 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.6. 2.7. 2.8. 2.9. 2.10. 2.11. 2.12. 2.13. Functional Description Clock Generation
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PAL 007E
Abstract: PAL 007e diagrams MSP 3415D MSP 34100 MSP3410D msp3415d micronas msp 34150 3415D NICAM MSP3410B
Text: % | i. i, si»: sTOm. vix PRELIMINARY DATA SHEET MSP 3415D Multistandard Sound Processor 4 MICRO Edition Jan. 1 5 ,1 9 9 8 6251-438-2P D INTERM ETA LL 4bflE711 0007010 724 MSP 3415D PRELIMINARY DATASHEET Contents Page Section Title 5 5 5 5 1. 1.1. 1.2. 1.3.
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6251-438-2PD
4bflE711
3415D
3415D
3410D
PAL 007E
PAL 007e diagrams
MSP 3415D
MSP 34100
MSP3410D
msp3415d
micronas msp 34150
NICAM
MSP3410B
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