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    Abstract: No abstract text available
    Text: » « H Y U N D A I e r ie s 1M x 4H_bŸjt 5C1M40 S4 0D R3 ABM Sw ,th 4C A S PRELIMINARY DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CSSO controls DQO,


    OCR Scan     		PDF 5C1M40 HY514403B 1AC15-00-MAY94 4b750fi6 HY514403BJ HY514403BU

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    Abstract: No abstract text available
    Text: HY5116404B Series »HYUNDAI 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116404B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116404B utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116404B HY5116404B 1AD49-10-MAY95 HY5116404BJ HY5116404BSLJ HY5116404BT HY5116404BSLT

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    Text: • H Y U N D A I HYM5V64214A F-Series 2M x 64-bit CMOS DRAM MODULE Unbuffered with EXTENDED DATA OUT DESCRIPTION The HYM5V64214A is a 2M x 64-bit ED O mode C M O S DRAM module consisting of eight HY51V17804B in 28/28 SO J or TSOP-II and one 2048 bit EEPR O M on a 168 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF


    OCR Scan     		PDF HYM5V64214A 64-bit HY51V17804B HYM5V64214AFG/ATFG/ASLFG/ASLTFG DQ0-DQ63) 1EC07-10-JANB6 750flfl