Untitled
Abstract: No abstract text available
Text: • 4B554S2 0014^5b 070 B I N R International t » r Rectifier PD-9.647A IRF9Z24 INTERNATIONAL HEXFET Pow er M O S FE T R EC TIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling
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4B554S2
IRF9Z24
O-220
0014T31
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Untitled
Abstract: No abstract text available
Text: Inte rn at io nal rectifier " 73 dF|4ü554se o o o t ,s 7 i 3 |~ r ~ 2 .5 - / ? Data Sheet No. PD-3.086 INTERNATIONAL RECTIFIER ISO PFT SERBES OQOA It GGI Gate Türn-Off Hockey Puk SCRs Major Ratings and Characteristics — • tgq 150PFT200 150PFT250 800
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554se
150PFT200
150PFT250
150PFT
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international rectifier GTO
Abstract: T120 16A ior scr it900 FULL WAVE RECTIFIER CIRCUITS with scr 500v 50a scr INTERNATIONAL RECTIFIER scr 150a gto 150PFT200 150PFT250
Text: in te rnational rectifTêr " 73 »F |4 fl ss 4s a o o o t s 7 i 3 |'r-xs-/? Data Sheet No. PD-3.086 IN T E R N A T IO N A L R E C T IF IE R TOR 1 5 0 PFT SERBES GODA I7QQ Gate Türn-Off Hockey Puk SCRs Description/Features Major Ratings and Characteristics
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GDGb571
150pft200
150pft250
150PFT
international rectifier GTO
T120 16A
ior scr
it900
FULL WAVE RECTIFIER CIRCUITS with scr
500v 50a scr
INTERNATIONAL RECTIFIER scr
150a gto
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier Data Sheet No. PD-6.028C IR2111 HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V
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IR2111
IR2111
5M-1982
M0-047AC.
554S2
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PDh5.022A International I R Rectifier IR2130D 3-PHASE BRIDGE Features •Hermetic ■Floatingchanneldesignedforbootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V
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IR2130D
IR2130D
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595-PH
Abstract: 30V 595PH
Text: International k ?r Rectifier HEXFET Power MOSFET • • • • PD-9.847 4655452 0015122 312 * I N R _ IR L IZ 24G INTERNATIONAL RECTIFIER b5E » Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive
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O-220
M655452
0015R27
IRLIZ24G
595-PH
30V 595PH
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Untitled
Abstract: No abstract text available
Text: International S Rectifier PD 91314 IRF737LC preliminary HEXFET^ Power MOSFET • Reduced Gate Drive Requirement • Enhanced 30V V qs Rating • Reduced Ciss. Coss> C rss • Extrem ely High Frequency Operation • Repetitive Avalanche Rated Voss = 300V RDS on =
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IRF737LC
002305b
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet PD 9.679C International I R Rectifier irhn725o dv/dt RATED HEXFET TRANSISTOR IRHN8250 REPETITIVE AVALANCHE AND N-CHANNEL MEGA RAD HARD Product Summary 200 Volt, 0.1 On, MEGA RAD HARD HEXFET International Rectifier’s M EG A RAD HARD technology
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irhn725
IRHN8250
3150utram
DD2b032
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3s4 MARKING CODE DIODE
Abstract: IRF540NS
Text: PD -9.1342 International [^Rectifier IRF540NS PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Vdss= 100V ^D S o n =
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IRF540NS
554S2
023LSD
3s4 MARKING CODE DIODE
IRF540NS
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D304 diode
Abstract: tr/P45/D304 diode
Text: • International ^R ectifier MÖSSM52 QQlb771 037 ■ INR INTERNATIONAL RECTIFIER b5E D SERIES IRK.F132 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features F ast tu rn -o ff th y ris to r F a s t re c o v e ry d io d e High su rg e c a p a b ility
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SSM52
QQlb771
46S5452
10ohms.
D304 diode
tr/P45/D304 diode
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER bSE D • 4ÔSSMS2 D O l ß n a GT7 ■ INR Preliminary Data Sheet No. PD-6.019 IN T E R N A T IO N A L R E C T IF IE R HIGH VOLTAGE T H R EE-P H A SE M O S GATE D R IV E R General Description Features The IR2130 is a high voltage driver for MOS-gated power
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IR2130
11DF4
IR2130
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Untitled
Abstract: No abstract text available
Text: 4 fi5 5 4 5 2 International i»r Rectifier SOQ M I N R PD-9.852 IRFIBC40G IN T E R N A T IO N A L HEXFET P o w e r M O S F E T • • • • • 0015250 R E C T IF IE R Isolated Package High Voltage lsolation= 2.5K VR M S Sink to Lead Creepage Dist.= 4.8mm
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IRFIBC40G
O-220
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