E78996
Abstract: E78996 rectifier module B40HF R40H
Text: International ^R ectifier • INTERNATIONAL RECTIFIER s e r ie s DIODES bSE ]> B40HF/B40HH Power Modules in B-package 40A Features ■ ■ ■ ■ ■ ■ ■ 4A55M52 QQlhSMh Q1T ■ Electrically isolated base plate 3500V RMS Available up to 1200 V RRM, V QRM
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lfl55M52
E78996
B40HF.
/B40HH.
E78996 rectifier module
B40HF
R40H
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H270
Abstract: KU ll 14a IRFI460 IRFI460D IRFI460U SS452
Text: Data Sheet No. PD-9.818 I N T E R N A T I O N A L R E C T I F I E R I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFI460 N -C H A N N E L 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International
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IRFI460D
IRFI460U
O-259
MIL-S-19500
SSM52
H270
KU ll 14a
IRFI460
IRFI460D
IRFI460U
SS452
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IRGKI0025M12
Abstract: mosfet 1200V 25A
Text: International Rectifier Preliminary Data Sheet No. PD-9.933 ir g k io o 25 m i 2 "CHOPPER" INT-A-PAK MODULES Fast™ IGBT VCE= 1200V W • Rugged Design .Simple gate-drive • Fast operation up to 10 kHz hard switching, or 50 kHz resonant .Switching-Loss Rating includes all "tail"
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IRGKI0025M12
IRGKI0025M12
mosfet 1200V 25A
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Untitled
Abstract: No abstract text available
Text: STE D • 4055452 GDISSMM bflfl ■ INR P D -2 2 9 9 INTERNATIONAL RECTIFIER International [k 3r ]Rectifier 3 SCHOTTKY RECTIFIER 30 Amp Description/Features Major Ratings and Characteristics 30CPQ150 Units Characteristics A VRRM 150 V ' fsm tp - 5|jssine
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30CPQ150
-55to175
O-247
D-185
T0747
30CPQ150
D-186
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Untitled
Abstract: No abstract text available
Text: Bulletin 12077/A International S Rectifier SD150N/R SERIES Stud Version STANDARD RECOVERY DIODES Features • W ide current range ■ High voltage ratings up to 2500V ■ High surge cu rre n t c a p a bilitie s ■ Stud cathode and stud anode version ■ S tandard JEDEC types
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12077/A
SD150N/R
180PC
MA554S2
002bfl2t>
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Untitled
Abstract: No abstract text available
Text: International ¡rag Rectifier PD 9.861 A IRFL110 HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements v DSS= 100V
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IRFL110
OT-223
DD2b442
55M52
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Untitled
Abstract: No abstract text available
Text: PD-9.557C International ÉÈ Rectifier • 4ÔS54S2 □ G IS 'î flû 205 ■ INR IRLZ24 INTERNATIONAL R E C T I F I E R HEXFET Power M O SFET Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at V g s = 4 V & 1 7 5 °C Operating Temperature
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S54S2
IRLZ24
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Untitled
Abstract: No abstract text available
Text: Bulletin 12136 04/97 SAFElR International IG R Rectifier Series 30TPS. PHASE CONTROL SCR VT <1.3V@20A ^tsm = 300A ^RRM 800 to 1600V Descrlption/Features T h e 30TP S. SAFE/ftseries of silicon controlled rectifiers a re s pe cifica lly designed for medium
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30TPS.
O-247
4A55M52
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Maxlinear
Abstract: No abstract text available
Text: Bulletin 125158/B International S R ectifier ST300S S E R IE S PHASE CONTROL THYRISTORS Stud Version Features 300A • C enter a m plifying gate ■ H erm etic m etal case w ith ceram ic insulator ■ In ternational standard case TO -209AE TO -118 ■ Threaded studs UNF 3/4 - 16UNF2A or ISO M 24x1.5
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125158/B
ST300S
-209AE
16UNF2A
D-269
4A55M52
Q0E70b5
D-270
Maxlinear
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thyristor eto
Abstract: No abstract text available
Text: Bulletin 125194/A International S R ectifier sn 230c.k s e rie s PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case A-24 K-PUK High profile hockey-puk Typical Applications
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125194/A
ST1230C.
002T2b4
thyristor eto
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transistor c374
Abstract: transistor c373 transistor c377
Text: International [^Rectifier P D -9.1143 IRGBC30MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -1 Ops @ 125°C, V qe = 15V Switching-loss rating includes all "tail" losses
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IRGBC30MD2-S
10kHz)
high-volta379
SMD-220
C-380
transistor c374
transistor c373
transistor c377
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Untitled
Abstract: No abstract text available
Text: P D - 9.1593 International IOR Rectifier IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
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IRG4BC30S
O-22QAB
S54S2
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ST 9918
Abstract: M6SS
Text: International :eVr Rectifier 4Ô55M52 0014072 07T * I N R HEXFET Power M O S F E T INTERNATIONAL • • • • • • • PD-9.918 IR F9610 S RECTIFIER Surface Mount Available in Tape & Reel Dynamic dv/dt Rating P-Channel Fast Switching Ease of Paralleling
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55M52
F9610
IRF9610S
46554S2
ST 9918
M6SS
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L415
Abstract: 30V 10.5A p-channel MOSFET 25i5 diode sv 03
Text: P D - 9 .1 6 4 0 B International IS R Rectifier IRL6903S/L HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Surface Mount IRL6903S • Low-profile through-hole (IRL6903L) • 175°C Operating Temperature • Fast Switching
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1640B
IRL6903S/L
IRL6903S)
IRL6903L)
L415
30V 10.5A p-channel MOSFET
25i5
diode sv 03
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1B50
Abstract: THC-1500 lrk9 20as15
Text: Bulletin 127132 rev. D 09/97 International ISR Rectifier IRK.71, .91 SERIES THYRISTOR/ DIODE and THYRISTOR/THYRISTOR NEWADD-A-pak Power Modules Features • Electrically isolated: DBC base plate ■ 3500 VRMS isolating voltage ■ Standard JED EC package
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Untitled
Abstract: No abstract text available
Text: Bulletin 127502 08/97 International IS R Rectifier m t . .KB THREE PHASE BRIDGE SERIES Power Modules Features • 130 A 160 A Package fully compatible with the Industry standard INT-A-pak power modules series ■ High thermal conductivity package, electrically insulated case
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E78996
DG30325
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IPM1560
Abstract: high side IGBT driver optocoupler
Text: P D -9.1283 International S Rectifier PROVISIONAL IP M 1 56 0 IGBT INTELLIGENT MODULE Features • • • • • • • • • 3 phase IGBT bridge with drive and protection circuit. 2kW output power at 300VDC, 8kHz, Tc = 85°C "UltraFast“ IGBT and "HEXFRED"™ Ultrafast, Soft Recovery Diodes.
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300VDC,
25kHz
IPM1560
10-Timing
4A55M52
Q0225
high side IGBT driver optocoupler
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RD202
Abstract: No abstract text available
Text: International e Rectifier HEXFET® Power M O S F E T • • • • • I INR 4ASS4S2 0G14bTfl S14 PD-9.317H IRF620 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements bSE D
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0G14bTfl
IRF620
O-220
SS452
DD147D3
RD202
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Untitled
Abstract: No abstract text available
Text: P D -5.044 International I R Rectifier PRELIMINARY CPV362M4U IGBT SIP MODULE UltraFast IGBT Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail" losses • H E X F R E D soft ultrafast diodes
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CPV362M4U
4A554S2
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