HB-S Rectifier
Abstract: KA2 v0 diode b3l 15a negetive diode
Text: I N T E R N A TI ON AL RECTIFIER lIO R lin t e r n a t io n a l "t Ì Dlf 4A554S2 □□□?□□? i T “ 3-5 “ /? Data Sheet No. PD-3.155 r e c t if ie r S23AF & S23AFH SERIES 800-600 VOLTS RANGE STANDARD TURN-OFF TIME 12 fjs 430 AMP RMS, RING AMPLIFYING GATE
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S23AF
S23AFH
S23AF
S23AF6A.
S54S2
HB-S Rectifier
KA2 v0
diode b3l
15a negetive diode
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Untitled
Abstract: No abstract text available
Text: E?R R ectifie PD-9.3261 4A554S2 D014baD 3fl4 H I N R International INTERNATIONAL RECTIFIER E5E ]> IR F610 HEXFET P o w e r M O S F E T • • • • • Dynam ic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirem ents
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4A554S2
D014baD
O-220
IRF610
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international rectifier p
Abstract: n5204
Text: international rectifier î“ — i — - -— — 48 55452 SS - - - INTERNATIONAL ÏMf|4a554S2 00047=15 4 - R EC flFlER 55C 04795 D Data Sheet No. PD-3.081A
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4a554S2
SN681
2N5204
2N681-92
2N5204-07
2N681
international rectifier p
n5204
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1RF620S
Abstract: No abstract text available
Text: International k ?r Rectifier • PD-9.900 _ IRF620S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • 4A554S2 0014704 b4fi ■ INR Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching
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IRF620S
4A554S2
SMD-220
4ASS452
1RF620S
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TIC33
Abstract: dt t3d 13 040B 75HQ 75HQ035 85HQ 85HQ030 85HQ035 DO-203AB 7666A
Text: INTERNATIONAL RECTIFIER 48 55452 liS INTERNATIONAL DE I 4A554S2 D0DS1S7 55C RECTIFIER 05127 Data Sheet No. PD-2.040B INTERNATIONAL RECTIFIER X O R 3 75HQ, 85HQ SERIES 7 5 and 8 5 Amp Schottky Power Rectifiers Major Ratings and Characteristics Rating Characteristic
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DDD51H7
1750C.
TIC33
dt t3d 13
040B
75HQ
75HQ035
85HQ
85HQ030
85HQ035
DO-203AB
7666A
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ABE 027
Abstract: ely transformers IRFM460 IRFM460D IRFM460U N431 BBV 32 transistors
Text: Data Sheet No. PD-9.727A INTERNATIONAL RECTIFIER IQ R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM46Q N-CHANNEL 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors.
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IRFM460
IRFM460D
IRFM460U
O-254
MIL-S-19S00
SSM52
I-372
ABE 027
ely transformers
IRFM460
IRFM460U
N431
BBV 32 transistors
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Untitled
Abstract: No abstract text available
Text: International IQR Rectifier preliminary_IR F 7 3 4 3 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Surface Mount • Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier
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Untitled
Abstract: No abstract text available
Text: PD-2.473 International [ìq r ì Rectifier HFA80NC40C Ultrafast, Soft Recovery Diode HEXFRED" BASE COMMON CATHODE Features V r = 400V c • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters I 1' J V F = 1.3V _ Qrr*
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HFA80NC40C
500nC
Liguria49
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IRF248N
Abstract: IRFIZ48N
Text: International SRectifier PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 55V ^DS on = 0.016W lD = 36A Description
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IRFIZ48N
O-220
0316Tel:
IRF248N
IRFIZ48N
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Untitled
Abstract: No abstract text available
Text: PD 9.1651 B International IQ R Rectifier F B 1 8 0 S A 10 HEXFET Power MOSFET • • • • • • • • Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance
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0D3D424
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Untitled
Abstract: No abstract text available
Text: International IM] Rectifier PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1for Current vs. Frequency curve
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IRGB430U
O-220AB
0G20375
TQ-220AB
4ASS452
02037b
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-6.013A International [ml Rectifier HIGH VOLTAGE IR 2 TIO L MOS GATE DRIVER General Description Features The IR2110L is a high voltage, high speed MOSgated power device driver with independent high side and low side referenced output channels. Proprietary
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IR2110L
IR2110L
MO-Q36AB
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Untitled
Abstract: No abstract text available
Text: Bulletin 125162/B International 1»r]Rectifier ST230C.C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features C en ter am plifying gate M e tal case with ceram ic insulator In ternational standard case T 0 -2 0 0 A B A -P U K Typical Applications
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125162/B
ST230C.
-200A
D-292
55M52
GQ270Ã
10-Thermal
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Untitled
Abstract: No abstract text available
Text: International S Rectifier HEXFRED Provisional Data Sheet PD-2.362 H FA 1 2 P A 1 2 0 C ULTRA FAST, SOFT RECOVERY DIODE 1200 V 6 .0 A F e a tu re s : — Ultra F as t R ecovery — Ultra So ft R ecovery — V e ry Low I r r m — V e ry Low Q rr — G u a ra n te ed A valan ch e
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o322-3331,
D-6380
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD 9.1293A International IGR Rectifier IRFY9130CM HEXFET9 POWER MOSFET P-CHANNEL -100 Volt, 0.3Q HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The effi
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IRFY9130CM
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Untitled
Abstract: No abstract text available
Text: dar 48 IO R 3 D I MühiHhd UOUäUiM 02E 0 6 0 1 4 D -T ^ & 3 -¿ 1 3 Data Sheet No. PD-2.123 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER R34BF SERIES 2000-1800 VOLTS RANGE REVERSE RECOVERY TIME 2.0//S 430 AMP AVG HOCKEY PUK SOFT FAST RECOVERY RECTIFIER DIODES
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R34BF
R34BF
R34BF18A.
D0-200AB
E1017
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Untitled
Abstract: No abstract text available
Text: International lÉlRectifier PD-2.463 HFA60MC60C Ultrafast, Soft Recovery Diode HEXFRED Features V R = 600V ISOLATEDBASE • Reduced R F I and EM I V F = 1.5V • Reduced Snubbing • Extensive Characterization of Recovery Param eters Qrr * = 500nC , t
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HFA60MC60C
500nC
Liguria49
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Untitled
Abstract: No abstract text available
Text: Bulletin 12033/A International H Rectifier sd 4000c .r s e rie s STANDARD RECOVERY DIODES Hockey Puk Version Features 4450A • W id e cu rren t range ■ High voltag e ratings up to 4 0 0 0 V ■ High surge cu rren t capab ilities ■ Diffused junction ■
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12033/A
4000c
D-187
4A554S2
SD4000C.
D-188
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.676A INTERNATIONAL RECTIFIER I @ R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRH7130 IRHB130 MEGA RAD HARD 100 Volt, 0.180, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown
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IRH7130
IRHB130
1x10s
IRH7130,
IRH8130
S5452
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Untitled
Abstract: No abstract text available
Text: PD 9.1663 International IOR Rectifier IR F R /U 9310 PRELIMINARY HEXFET Power MOSFET • • • • • • P-Channel Surface Mount IRFR9310 Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated Voss = -400V R D S (on) = 7 .0 Q
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IRFR9310)
IRFU9310)
-400V
O-251AA
0D26B20
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Untitled
Abstract: No abstract text available
Text: brtemational PD91226 j«g]Rectifier_ IRFD 320 HEXFET P ow er M O S FE T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements
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4A5545E
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Untitled
Abstract: No abstract text available
Text: PD-9.1089 International k ?r Rectifier IRL640 HEXFET Power MOSFET • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS on Specified at Vgs=4V & 5V • Fast Switching • Ease of Paralleling • Simple Drive Requirements
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IRL640
O-220
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150L120A
Abstract: 150LA 45L100 2088a BS3934 cr 29c BS9300 45L15 150K-A 150L80A
Text: 73 DE|4fi5545H 0007350 3 | Data Sheet No. PD-2.088A 73C 07350 4855452 INTERNATIONAL RECTIFIER D T -a /-3-/ in t e r n a t io n a l r e c t if ie r 45L, 15QK-A, 1SOL-A, 150K5 SERIES 1 5 0 Amp Power Silicon Rectifier Diodes Description Major Ratings and Characteristics
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150K-A,
150L-A,
150KS
150K-A/150KS
150L-A/45L
152K-A
V1/2-20
152L-A
3/8-24-UNF-2A
150L120A
150LA
45L100
2088a
BS3934
cr 29c
BS9300
45L15
150K-A
150L80A
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thyristor dk
Abstract: No abstract text available
Text: Bulletin 125172/A International SRectifier ST303C.C s e rie s INVERTER GRADE THYRISTORS Puk Version Features • Metal case with ceramic insulator ■ International standard case TO-200AB E-PUK ■ All diffused design ■ Center amplifying gate ■ Guaranteed high dV/dt
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125172/A
ST303C.
O-200AB
D-588
D-589
thyristor dk
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