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    495MW Datasheets Context Search

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    MARKING 3D regulator 5V

    Abstract: marking code E5 SMD ic power supply DVD schematic diagram smd marking e5 rf smd transistor marking ld3 LM4857 LM4857GR LM4857ITL LM4857SP
    Text: LM4857 Stereo 1.2W Audio Sub-system with 3D Enhancement General Description Key Specifications The LM4857 is an integrated audio sub-system designed for stereo cell phone applications. Operating on a 3.3V supply, it combines a stereo speaker amplifier delivering 495mW per


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    LM4857 LM4857 495mW CSP-9-111C2) CSP-9-111S2) CSP-9-111S2. MARKING 3D regulator 5V marking code E5 SMD ic power supply DVD schematic diagram smd marking e5 rf smd transistor marking ld3 LM4857GR LM4857ITL LM4857SP PDF

    3D smd marking

    Abstract: LM4859 LM4859SP MARKING 3D regulator 5V
    Text: LM4859 Stereo 1.2W Audio Sub-system with 3D Enhancement General Description Key Specifications The LM4859 is an integrated audio sub-system designed for stereo cell phone applications. Operating on a 3.3V supply, it combines a stereo speaker amplifier delivering 495mW per


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    LM4859 LM4859 495mW CSP-9-111C2) CSP-9-111S2) CSP-9-111S2. 3D smd marking LM4859SP MARKING 3D regulator 5V PDF

    SMD MARKING CODE 12w

    Abstract: LM4859 LM4859SP LM4859TL MARKING 3D regulator 5V smd marking code 3D
    Text: LM4859 Stereo 1.2W Audio Sub-system with 3D Enhancement General Description Key Specifications The LM4859 is an integrated audio sub-system designed for stereo cell phone applications. Operating on a 3.3V supply, it combines a stereo speaker amplifier delivering 495mW per


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    LM4859 LM4859 495mW SMD MARKING CODE 12w LM4859SP LM4859TL MARKING 3D regulator 5V smd marking code 3D PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-1963; Rev 0; 2/01 EVALUATIO N KIT AVA ILABLE 16:1 Serializer, 3.3V, 2.5Gbps, SDH/SONET, with Clock Synthesis and LVPECL Inputs Features ♦ Single +3.3V Supply ♦ 495mW Power Consumption ♦ Exceeds ANSI, ITU, and Bellcore Specifications ♦ 155Mbps 16-bit wide Parallel to 2.5Gbps Serial


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    MAX3891 16-bit 155Mbps 52MHz, 76MHz MAX3891 PDF

    LM4857

    Abstract: LM4857ITL LM4857SP marking code E5 SMD ic
    Text: LM4857 Stereo 1.2W Audio Sub-system with 3D Enhancement General Description Key Specifications The LM4857 is an integrated audio sub-system designed for stereo cell phone applications. Operating on a 3.3V supply, it combines a stereo speaker amplifier delivering 495mW per


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    LM4857 LM4857 495mW LM4857ITL LM4857SP marking code E5 SMD ic PDF

    330nF capacitor

    Abstract: LVDS Serializer MAX3867 MAX3880 MAX3890 MAX3890ECB
    Text: 19-1498; Rev 0; 6/99 KIT ATION EVALU E L B AVAILA +3.3V, 2.5Gbps, SDH/SONET 16:1 Serializer with Clock Synthesis and LVDS Inputs Features ♦ Single +3.3V Supply ♦ 495mW Power Consumption ♦ Exceeds ANSI, ITU, and Bellcore Specifications ♦ 155Mbps 16-bit wide Parallel to 2.5Gbps Serial


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    495mW 155Mbps 16-bit 52MHz, 76MHz, 84MHz, 88MHz) MAX3890ECB MAX3890 330nF capacitor LVDS Serializer MAX3867 MAX3880 MAX3890 MAX3890ECB PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-1963; Rev 0; 2/01 ILABLE N KIT AVA EVALUATIO 16:1 Serializer, 3.3V, 2.5Gbps, SDH/SONET, with Clock Synthesis and LVPECL Inputs Features ♦ Single +3.3V Supply ♦ 495mW Power Consumption ♦ Exceeds ANSI, ITU, and Bellcore Specifications ♦ 155Mbps 16-bit wide Parallel to 2.5Gbps Serial


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    MAX3891 16-bit 155Mbps 52MHz, 76MHz, 84ation: 10x10x1mm 21-0084C PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-1963; Rev 0; 2/01 ILABLE N KIT AVA EVALUATIO 16:1 Serializer, 3.3V, 2.5Gbps, SDH/SONET, with Clock Synthesis and LVPECL Inputs Features ♦ Single +3.3V Supply ♦ 495mW Power Consumption ♦ Exceeds ANSI, ITU, and Bellcore Specifications ♦ 155Mbps 16-bit wide Parallel to 2.5Gbps Serial


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    495mW 155Mbps 16-bit 52MHz, 76MHz, 84MHz, 88MHz) MAX3891 PDF

    ci smd cd3

    Abstract: LM4844
    Text: LM4844 Stereo 1.2W Audio Sub-System with 3D Enhancement General Description Features The LM4844 is an integrated audio sub-system designed for stereo cell phone applications. Operating on a 3.3V supply, it combines a stereo speaker amplifier delivering 495mW per


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    LM4844 495mW ci smd cd3 PDF

    TLA30CZA

    Abstract: LM4859SP
    Text: LM4859 Stereo 1.2W Audio Sub-system with 3D Enhancement General Description Key Specifications The LM4859 is an integrated audio sub-system designed for stereo cell phone applications. Operating on a 3.3V supply, it combines a stereo speaker amplifier delivering 495mW per


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    LM4859 495mW TLA30CZA LM4859SP PDF

    smd transistor marking ld3

    Abstract: 2.5mm stereo jack plug 3D smd marking loud speaker MARKING 3D regulator 5V marking code E5 SMD ic SMD LD3 smd marking e5 rf smd marking f2 smd transistor LD4
    Text: LM4844 Stereo 1.2W Audio Sub-system with 3D Enhancement General Description Key Specifications The LM4844 is an integrated audio sub-system designed for stereo cell phone applications. Operating on a 3.3V supply, it combines a stereo speaker amplifier delivering 495mW per


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    LM4844 LM4844 495mW CSP-9-111S2. smd transistor marking ld3 2.5mm stereo jack plug 3D smd marking loud speaker MARKING 3D regulator 5V marking code E5 SMD ic SMD LD3 smd marking e5 rf smd marking f2 smd transistor LD4 PDF

    1LD5

    Abstract: SMD LD3 smd marking e5 rf 7106D LM4844 LM4844TL
    Text: LM4844 Stereo 1.2W Audio Sub-System with 3D Enhancement General Description Features The LM4844 is an integrated audio sub-system designed for stereo cell phone applications. Operating on a 3.3V supply, it combines a stereo speaker amplifier delivering 495mW per


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    LM4844 LM4844 495mW 1LD5 SMD LD3 smd marking e5 rf 7106D LM4844TL PDF

    smd marking e5 rf

    Abstract: LM4857 LM4857GR LM4857ITL LM4857SP marking code E5 SMD ic
    Text: LM4857 Stereo 1.2W Audio Sub-system with 3D Enhancement General Description Key Specifications The LM4857 is an integrated audio sub-system designed for stereo cell phone applications. Operating on a 3.3V supply, it combines a stereo speaker amplifier delivering 495mW per


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    LM4857 LM4857 495mW smd marking e5 rf LM4857GR LM4857ITL LM4857SP marking code E5 SMD ic PDF

    LM4857

    Abstract: LM4857ITL LM4857SP
    Text: LM4857 Stereo 1.2W Audio Sub-system with 3D Enhancement General Description Key Specifications The LM4857 is an integrated audio sub-system designed for stereo cell phone applications. Operating on a 3.3V supply, it combines a stereo speaker amplifier delivering 495mW per


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    LM4857 LM4857 495mW CSP-9-111S2. LM4857ITL LM4857SP PDF

    DP83223V

    Abstract: t592 PE-68515L s558-5999-46 "network interface cards" "Fast Link Pulse"
    Text: DP83846A DP83846A DsPHYTER - Single 10/100 Ethernet Transceiver Literature Number: SNLS063E DP83846A DsPHYTER — Single 10/100 Ethernet Transceiver General Description Features The DP83846A is a full feature single Physical Layer device with integrated PMD sublayers to support both


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    DP83846A DP83846A SNLS063E 10BASE-T 100BASE-TX DP83223V t592 PE-68515L s558-5999-46 "network interface cards" "Fast Link Pulse" PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSEL MS6264 8K x 8 CMOS Static RAM FEATURES DESCRIPTION >Available in 70/100 ns Max. >Automatic power-down when chip disabled • Lower power consumption: MS6264 - 495mW (Max.) Operating - 82.5mW (Max.) Standby - 11 mW (Max.) Power Down MS6264L - 467.5mW (Max.) Operating


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    MS6264 495mW MS6264L MS6264 S6264-70PC P28-1 S6264-70FC S28-2 S6264L-70PC PDF

    toshiba 7 pin a215

    Abstract: A227
    Text: TOSHIBA TC514800AJL/AFTL70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJL/AFTL is the new generation dynamic RAM organized 524,288 word by 8 bit. The TC514800AJL/AFTL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


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    TC514800AJL/AFTL70/80 TC514800AJL/AFTL toshiba 7 pin a215 A227 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1,M3,575 1,'ORDX 4 BIT DYNAMIC RAM * This is a ^ a n c e d information and specifications are subject to change without notice. DESCRIPTION The TC514400JL/ZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400JL/ZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as


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    TC514400JL/ZL TC514400JL/ZL-80 TC514400JL/ZL-- PDF

    TC511664BJl

    Abstract: toshiba TC511664BJL TC511664
    Text: T EN TA TIV E D A TA 65,536 W O R D x 16 BIT D Y N A M IC RAM DESCRIPTION T: '1'Call SG4TUL/EZL is the new generation dynamic RAM organized 65,536 words by 16 bits. The lc3 ibJL/'BZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as advanced


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    PDF

    A302 w3

    Abstract: aa z8b
    Text: TOSHIBA MOS MEMORY PRODUCTS TC514410J/Z-80» TC514410J/Z-10 DESCRIPTION’ The TC514410J/Z i s th e new g e n e r a t i o n dynamic RAM o r g a n i z e d 1 , 0 4 8 , 5 7 6 w ords by 4 b its. The TC514410J/Z u t i l i z e s TOSHIBA'S CMOS S i l i c o n g a t e p r o c e s s t e c h n o l o g y a s


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    TC514410J/Z-80» TC514410J/Z-10 TC514410J/Z 514410J/Z TC514410J/Z-80, TC514410J/M A302 w3 aa z8b PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 17 8 0 4 B ,H Y 5 1 16 8 0 4 B 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


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    PDF

    HY5116100B

    Abstract: No abstract text available
    Text: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. TheHY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


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    HY5116100B TheHY5116100B 1AD41-00-MAY9S 4b750Ã 0GG435b HY5116100BJ HY5116100BSLJ PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating


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    HY5116400 1AD02-10-APR93 HY5116400JC HY5116400LJC HY5116400TC HY5116400LTC PDF

    Untitled

    Abstract: No abstract text available
    Text: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating


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    HY5116400A HY5116400A 1AD23-10-MAY95 HY5116400AJ HY5116400ASLJ HY511 400AT PDF