4925 B
Abstract: 4925 B mosfet 4925 B transistor APM4925 8A330
Text: APM4925 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-6.1A, RDS ON = 24mΩ(typ.) @ VGS = -10V S1 1 8 D1 Super High Density Cell Design G1 2 7 D1 Reliable and Rugged S2 3 6 D2 SO-8 Package G2 4 5 D2 RDS(ON) = 30mΩ(typ.) @ VGS = -4.5V
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APM4925
-30V/-6
4925 B
4925 B mosfet
4925 B transistor
APM4925
8A330
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4925 B mosfet
Abstract: 4925 B 4925 B transistor APM4925K STD-020C 51A MARKING CODE
Text: APM4925K Dual P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-6.1A , D1 D1 RDS ON =24mΩ(typ.) @ VGS=-10V RDS(ON)=30mΩ(typ.) @ VGS=-4.5V • • • • D2 D2 S1 G1 S2 G2 Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8
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APM4925K
-30V/-6
4925 B mosfet
4925 B
4925 B transistor
APM4925K
STD-020C
51A MARKING CODE
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32N50Q
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs Q-Class IXFH 32N50Q IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C TC = 25°C, pulse width limited by TJM
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32N50Q
32N50Q
O-247
O-268
125OC
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32N50Q
Abstract: IXFH32N50Q
Text: HiPerFETTM Power MOSFETs Q-Class IXFH 32N50Q IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM IAR TC = 25°C, pulse width limited by TJM
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32N50Q
32N50Q
O-247
O-268
125OC
IXFH32N50Q
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32N50Q
Abstract: 4925 B transistor 125OC 30n50 728B1
Text: IXFH 32N50Q IXFT 32N50Q HiPerFETTM Power MOSFETs Q-Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C
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32N50Q
125OC
reserves10
728B1
123B1
728B1
065B1
32N50Q
4925 B transistor
125OC
30n50
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32N50Q
Abstract: 30N50Q 125OC 30n50
Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFH/IXFT 30N50Q IXFH/IXFT 32N50Q 500 V 30 A 0.16 Ω 500 V 32 A 0.15 Ω Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient
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30N50Q
32N50Q
125OC
32N50Q
30N50Q
125OC
30n50
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Untitled
Abstract: No abstract text available
Text: IXFH 32N50Q IXFT 32N50Q HiPerFETTM Power MOSFETs Q-Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C
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32N50Q
125OC
reserves10
728B1
123B1
728B1
065B1
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PDF
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Untitled
Abstract: No abstract text available
Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFH/IXFT 30N50Q IXFH/IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C,
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30N50Q
32N50Q
32N50
125OC
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4925 B smd
Abstract: star power for star delta with inch reverse
Text: FSPYE130R, FSPYE130F TM Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the
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FSPYE130R,
FSPYE130F
4925 B smd
star power
for star delta with inch reverse
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Untitled
Abstract: No abstract text available
Text: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ Single event effect (SEE) hardened
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STRH100N10
O-254AA
O-254AA
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MIL-STD-750E
Abstract: STRH100N10 STRH100N10FSY1
Text: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ Single event effect (SEE) hardened
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STRH100N10
O-254AA
MIL-STD-750E
STRH100N10
STRH100N10FSY1
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STRH100N10
Abstract: STRH100N STRH100N10FSY1 MIL-STD-750E DSASW003741 Doc ID 17486 Rev 4 STRH100N10FSY01
Text: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened
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STRH100N10
O-254AA
STRH100y
STRH100N10
STRH100N
STRH100N10FSY1
MIL-STD-750E
DSASW003741
Doc ID 17486 Rev 4
STRH100N10FSY01
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Doc ID 17486 Rev 7
Abstract: No abstract text available
Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite
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STRH100N10
O-254AA
STRH100N10HY1
STRH100N1
Doc ID 17486 Rev 7
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PDF
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Untitled
Abstract: No abstract text available
Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite
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STRH100N10
O-254AA
STRH100N10HY1
STRH100N10HY01
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RELAY 20A 12V
Abstract: 2E12 FSPYE130D1 FSPYE130R3 Rad Hard in Fairchild for MOSFET
Text: FSPYE130R, FSPYE130F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the
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FSPYE130R,
FSPYE130F
FSPYE130F
RELAY 20A 12V
2E12
FSPYE130D1
FSPYE130R3
Rad Hard in Fairchild for MOSFET
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Untitled
Abstract: No abstract text available
Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 48 A 30 mΩ 135 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID TO-254AA • SEE radiation hardened
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STRH100N10
O-254AA
SC30150
DocID17486
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PDF
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Untitled
Abstract: No abstract text available
Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID TO-254AA • SEE radiation hardened
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STRH100N10
O-254AA
SC30150
DocID17486
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SMP60
Abstract: uc3842 half bridge UC3842 buck 3843 application note 3844 pwm circuits UC3842 mosfet driver 31DQ10 equivalent 8 pin 4v power supply converter buck uc3842 application note buck using uc3842
Text: MIC38C42A/43A/44A/45A Micrel, Inc. MIC38C42A/43A/44A/45A BiCMOS Current-Mode PWM Controllers General Description Features The MIC38C4xA are fixed frequency, high performance, current-mode PWM controllers. Micrel’s BiCMOS devices are pin compatible with 384x bipolar devices but feature
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MIC38C42A/43A/44A/45A
MIC38C4xA
M9999-042205
SMP60
uc3842 half bridge
UC3842 buck
3843 application note
3844 pwm circuits
UC3842 mosfet driver
31DQ10 equivalent
8 pin 4v power supply converter
buck uc3842 application note
buck using uc3842
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3845 48V to 12V buck boost converter
Abstract: ua 3843 38C44
Text: MIC38C42/3/4/5 BMM BiCMOS Current-Mode PWM Controller Preliminary Information General Description Features The MIC38C4x is a fixed frequency, high performance, current-mode PWM controller. This improved BiCMOS de vice is pin compatible with 384x bipolar devices but in the
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MIC38C42/3/4/5
MIC38C4x
60fiA
MIC38C42/3/4/5BMM
3845 48V to 12V buck boost converter
ua 3843
38C44
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motorola transistor 912
Abstract: MTP3035V MTP3055V 221A-06 AN569 MTP3055VL
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP3055V TMOS V™ Power Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This
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MTP3055V
MTP30SSVL
0E-05
0E-04
0E-03
0E-02
0E-01
motorola transistor 912
MTP3035V
221A-06
AN569
MTP3055VL
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PDF
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MC 3843
Abstract: P60N06-14 N49 Switching p60n 38c42 C4234 MIC38HC43BM MC 3843 circuit 3845 48V to 12V buck boost converter 40v N- and P-Channel dip-8
Text: General Description Features The MIC38C4x and MIC38HC4x are fixed frequency, high performance, current-mode PWM controllers. M icrel’s BiCMOS devices are pin compatible with 384x bipolar de vices bu1 feature several improvements. ‘HC’ versions sup
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MIC38C4x
MIC38HC4x
50jiA
MIC5020,
MIC5021,
MIC5022
MIC38C43
100kHz,
MC 3843
P60N06-14
N49 Switching
p60n
38c42
C4234
MIC38HC43BM
MC 3843 circuit
3845 48V to 12V buck boost converter
40v N- and P-Channel dip-8
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PWM IC 8-PIN DIP
Abstract: buck uc3842 application note PWM IC 8 PIN DIP 3844 ic 3843 external
Text: MIC38C/HC42/3/4/5 BiCMOS Current-Mode PWM Controller Advance Information General Description Features The MIC38C4x and MIC38HC4x are fixed frequency, high performance, current-mode PWM controllers. Micrel’s BiCMOS devices are pin compatible with 384x bipolar de
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OCR Scan
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MIC38C/HC42/3/4/5
MIC38C4x
MIC38HC4x
MIC5020,
MIC5021,
MIC5022
SMP60N06-14
MJC38C43
470uF
MIC38C43
PWM IC 8-PIN DIP
buck uc3842 application note
PWM IC 8 PIN DIP 3844
ic 3843 external
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PWM IC 8 PIN DIP 3844
Abstract: 38c43 38hc43 38c42 38c44 flyback "gate 7" "dip-8" 3845 n equivalent VALUE IC pin configuration of ic 3844 4925 B equivalent ic IC UC3842
Text: MIC38C/HC42/3/4/5, MICI 8C42/3/4/5 BiCMOS Current-Mode PWM Controller General Description Features The MIC38C4x and MIC38HC4x are fixed frequency, high perform ance, current-m ode PWM controllers. M icrel's BiCMOS devices are pin compatible with 384x bipolar de
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OCR Scan
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MIC38C/HC42/3/4/5,
8C42/3/4/5
MIC38C4x
MIC38HC4x
MIC5020,
MIC5021,
MIC5022
100kHz,
PWM IC 8 PIN DIP 3844
38c43
38hc43
38c42
38c44
flyback "gate 7" "dip-8"
3845 n equivalent VALUE IC
pin configuration of ic 3844
4925 B equivalent ic
IC UC3842
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MIC18HC45AJ
Abstract: MIC18C45AJ MIC18C43AJ MIC18C45
Text: MIC38 42/3/4/5, MICI 8 42/3/4/5 BiCMOS Current-Mode PWM Controller Preliminary Information General Description Features The MIC38C4x and MIC38HC4x are fixed frequency, high performance, current-mode PWM controllers. Micrel’s BiCMOS devices are pin compatible with 384x bipolar de
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OCR Scan
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MIC38
MIC38C4x
MIC38HC4x
rise/30ns
MIC38C42
rise/15ns
MIC38HC42
UC284x
MIC5020,
MIC5021,
MIC18HC45AJ
MIC18C45AJ
MIC18C43AJ
MIC18C45
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