7555-T
Abstract: M1FM3
Text: Al t hough we ar e cons t ant l ymak i ng ev er yef f or tt oi mpr ov et he qual i t yand r el i abi l i t yofourpr oduct s ,t her enev er t hel es sr emai nsacer t ai npr obabi l i t yt hatt he s emi conduct orpr oduct smayoccas i onal l yf ai lormal f unct
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i386SX
Abstract: design ideas i486sx nec floppy circuit pc mouse drawing V800
Text: User’s Manual idea-L Screen Editor Introduction MS-Windows Based Ver. V3.30 Document No. U10094EJ2V0UM00 2nd edition Date Published August 1997 Printed in Japan 1997 [MEMO] * IBM-PC is a trademark of International Business Machines Corporation. * MS-DOS and MS-Windows are either registered trademarks or trademarks of Microsoft Corporation in the
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U10094EJ2V0UM00
i386SX
i486SX
design ideas
nec floppy circuit
pc mouse drawing
V800
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NEC 2505
Abstract: 2505 photocoupler nl601 PS2505-1 PS2505-1-A PS2505-4-A PS2505L-1-E4 PS2505-4 PS2505L-4 PS2505-2
Text: DATA SHEET PHOTOCOUPLER PS2505-1,-2,-4,PS2505L-1,-2,-4 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2505-1, -2, -4 and PS2505L-1, -2, -4 are optically coupled isolators containing GaAs light emitting diodes
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PS2505-1
PS2505L-1
PS2505-1,
PS2505L-1,
PS2505L-1
NEC 2505
2505 photocoupler
nl601
PS2505-1-A
PS2505-4-A
PS2505L-1-E4
PS2505-4
PS2505L-4
PS2505-2
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MC-7894
Abstract: MC-7894-AZ 7894
Text: DATA SHEET GaAs MULTI-CHIP MODULE MC-7894 1 GHz CATV 24 dB POWER DOUBLER AMPLIFIER DESCRIPTION The MC-7894 is a GaAs Multi-chip Module designed for use in CATV applications up to 1 GHz. This unit has low distortion, low noise figure and return loss across the entire frequency band.
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MC-7894
MC-7894
MC-7894-AZ
MC-7894-AZ
7894
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MC-7833
Abstract: MC-7833-AZ
Text: DATA SHEET GaAs MULTI-CHIP MODULE MC-7833 870 MHz CATV 25 dB PUSH-PULL AMPLIFIER DESCRIPTION The MC-7833 is a GaAs Multi-chip Module designed for use in CATV applications up to 870 MHz. This unit has low distortion, low noise figure and return loss across the entire frequency band.
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MC-7833
MC-7833
MC-7833-AZ
MC-7833-AZ
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PJ979
Abstract: diode PJ979 diode pj88 diode pj76 PJ74 DIODE pj88 PJ84 PJ83 diode pj86 PJ76
Text: Copper Communications Components Patch Cords – Bantam Two and Three Conductor Bantam Patch Cords Bantam patch cords are plastic jacketed, shielded cords with moldedon plugs. The plugs are made with molded insulation between conductors. Bantam patch cords are
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nec 7893
Abstract: 7893 MC-7893 MC-7893-AZ
Text: DATA SHEET GaAs MULTI-CHIP MODULE MC-7893 1 GHz CATV 22 dB POWER DOUBLER AMPLIFIER DESCRIPTION The MC-7893 is a GaAs Multi-chip Module designed for use in CATV applications up to 1 GHz. This unit has low distortion, low noise figure and return loss across the entire frequency band.
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MC-7893
MC-7893
MC-7893-AZ
nec 7893
7893
MC-7893-AZ
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NX5522 Series LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE R08DS0029EJ0100 Rev.1.00 Oct 06, 2010 DESCRIPTION The NX5522 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are
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NX5522
R08DS0029EJ0100
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Untitled
Abstract: No abstract text available
Text: PreliminaryData Sheet PD5754T7A R09DS0012EJ0100 Rev.1.00 Dec 22, 2010 SiGe/CMOS Integrated Circuit 4 x 2 IF Switch Matrix with Gain and Tone/Voltage Controller FEATURES • 4 independent IF channels, integral switching to channel input to either channel output
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PD5754T7A
R09DS0012EJ0100
PD5739T7A
28-pin
28-pnesas
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TH05-3H103F
Abstract: No abstract text available
Text: Datasheet R2A20055NS R03DS0074EJ0100 Rev.1.00 May 7, 2013 Lithium-Ion Battery Charger IC Description The R2A20055NS is a semiconductor integrated circuit designed for Lithium-ion battery chargers at spacelimited portable applications. The R2A20055NS simply controls to charge a battery with a small number of
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R2A20055NS
R03DS0074EJ0100
R2A20055NS
100mA/500mA)
TH05-3H103F
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PU10212EJ02V0DS
2SC5761
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet PA2811T1L R07DS0191EJ0100 Rev.1.00 Jan 11, 2011 MOS FIELD EFFECT TRANSISTOR Description The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.
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PA2811T1L
R07DS0191EJ0100
PA2811T1L
PA2811T1L-E1-AY
PA2811T1L-E2-AY
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet TBB1005 R07DS0315EJ1000 Previous: REJ03G0843-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
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TBB1005
R07DS0315EJ1000
REJ03G0843-0900)
PTSP0006JA-A
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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nec A1394
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK0243DNS 25V, 25A, 9.6mΩmax. N Channel Power MOS FET High Speed Power Switching R07DS1074EJ0110 Rev1.10 Mar 28, 2013 Features • • • • • • • Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting
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RJK0243DNS
R07DS1074EJ0110
PWSN0008JB-A
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet PA2561T1H R07DS0006EJ0100 Rev.1.00 Jul 08, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2561 is Dual N-channel MOSFETs designed for back light inverters and power management applications of portable equipments. Dual N-channel MOSFETs are assembled in one package, to contribute minimize the equipments.
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PA2561T1H
R07DS0006EJ0100
PA2561
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Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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TO-220FL
Abstract: No abstract text available
Text: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ
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RJP30E3DPP-M0
R07DS0353EJ0200
O-220FL
PRSS0003AF-A)
O-220FL)
TO-220FL
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